专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09127197B2 Aluminum deficient α-SiAlON phosphors, method of preparing the same, and LED chip package using the same 有权
标题翻译：缺铝的α-SiAlON磷光体，其制备方法和使用其的LED芯片封装
公开(公告)号：US09127197B2
公开(公告)日：2015-09-08
申请号：US13273665
申请日：2011-10-14
申请人： Bo-Yun Jang , Sung-Soon Park , Joo-Seok Park
发明人： Bo-Yun Jang , Sung-Soon Park , Joo-Seok Park
IPC分类号： C09K11/78 , H01L33/44 , C09K11/08 , C09K11/77 , H05B33/14 , H01L33/50
CPC分类号： C09K11/0883 , C09K11/7734 , H01L33/502 , H05B33/145
摘要： The present disclosure provides α-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca0.8-xRexAlaySi12-yO1.2N14.8 (Re is a rare-earth element, 0≦x≦0.2, 2.6≦y≦3.0, and 0.6≦a≦0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of Ca0.8-xRexAlaySi12-yO1.2N14.8.
摘要翻译：本公开提供了α-SiAlON荧光体，其制备方法和使用其的LED芯片封装。该方法包括称重和混合Ca0.8-xRexAlaySi12-yO1.2N14.8原料（Re为稀土元素，0＆nlE; x＆nlE; 0.2,2.6＆nlE; y＆nlE; 3.0和0.6＆nlE; a＆nlE; 0.95），并通过常压烧结烧结混合原料，以制备具有Ca0.8-xRexAlaySi12-yO1.2N14.8组成的荧光体。

2. 发明授权

US08968470B2 Graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible 有权
标题翻译：用于硅电磁感应加热的石墨坩埚和使用石墨坩埚进行硅熔化和精炼的设备
公开(公告)号：US08968470B2
公开(公告)日：2015-03-03
申请号：US12568436
申请日：2009-09-28
申请人： Bo Yun Jang , Young Soo Ahn , Joon Soo Kim , Sang Hyun Park , Dong Kook Kim , Gwon Jong Yu
发明人： Bo Yun Jang , Young Soo Ahn , Joon Soo Kim , Sang Hyun Park , Dong Kook Kim , Gwon Jong Yu
IPC分类号： C30B35/00 , C30B13/14
CPC分类号： C30B13/14 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068
摘要： Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.
摘要翻译：本文公开了一种用于基于电磁感应的硅熔化的石墨坩埚和使用该方法的硅熔化/精炼装置，其通过间接熔化和直接熔融的组合进行熔融操作。坩埚由石墨材料形成，并且包括具有开放的上部的圆柱体，硅原料通过该上部装载到坩埚中，以及由感应线圈包围的外壁，其中多个狭缝通过外壁和坩埚的内壁，使得由在感应线圈中流动的电流产生的电磁力作用于坩埚的内部中心，以防止硅熔体与坩埚的内壁接触。

3. 发明申请

US20130067959A1 A GRAPHITE CRUCIBLE FOR SILICON ELECTROMAGNETIC INDUCTION HEATING AND APPARATUS FOR SILICON MELTING AND REFINING USING THE GRAPHITE CRUCIBLE 审中-公开
标题翻译：用于硅电磁感应加热的石墨坩埚和使用石墨坩埚进行硅熔体和精炼的装置
公开(公告)号：US20130067959A1
公开(公告)日：2013-03-21
申请号：US13677334
申请日：2012-11-15
申请人： Jin Seok Lee , Young Soo Ahn , Bo Yun Jang , Joon Soo Kim
发明人： Jin Seok Lee , Young Soo Ahn , Bo Yun Jang , Joon Soo Kim
IPC分类号： F27B14/06 , F27B14/00
CPC分类号： F27B14/061 , C30B11/002 , C30B13/14 , C30B15/10 , C30B29/06 , C30B35/002 , F27B14/00
摘要： The present disclosure provides a graphite crucible induction-based silicon melting. The graphite crucible comprises a cylindrical body having a plurality of slits which is formed through an outer wall and an inner wall of the cylindrical body and a bottom part connected with an edge of the cylindrical body to seal an end of the cylindrical body.
摘要翻译：本公开提供了一种基于石墨坩埚的感应基硅熔化。石墨坩埚包括具有多个狭缝的圆柱体，其通过圆筒体的外壁和内壁形成，底部与圆柱体的边缘连接以密封圆柱体的端部。

4. 发明申请

US20120292825A1 APPARATUS FOR MANUFACTURING SILICON SUBSTRATE FOR SOLAR CELL USING CONTINUOUS CASTING FACILITATING TEMPERATURE CONTROL AND METHOD OF MANUFACTURING SILICON SUBSTRATE USING THE SAME 有权
标题翻译：制造使用连续铸造的温度控制的太阳能电池用硅基板的装置及使用其制造硅基板的方法
公开(公告)号：US20120292825A1
公开(公告)日：2012-11-22
申请号：US13115588
申请日：2011-05-25
申请人： Bo-Yun JANG , Jin-Seok LEE , Joon-Soo KIM
发明人： Bo-Yun JANG , Jin-Seok LEE , Joon-Soo KIM
IPC分类号： B29C39/38
CPC分类号： B22D11/045 , C01B33/037 , C30B11/001 , C30B11/003 , C30B28/10 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1024 , Y10T117/1092
摘要： The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.
摘要翻译：本公开内容提供一种使用连续铸造制造用于太阳能电池的硅衬底的装置，其可以提高硅衬底的质量，生产率和能量转换效率。该装置包括：坩埚单元，被配置为接收原料硅并具有排出口;加热单元，设置在坩埚单元的外壁和外部底表面，并加热坩埚单元以形成熔融硅;铸造单元，硅进入硅衬底，冷却单元快速冷却硅衬底;以及转移单元，其设置在冷却单元的一端并转移硅衬底。铸造单元包括具有限定在其中以与排出口水平连接的铸造空间的铸造单元主体和预热铸造单元主体以控制硅基板的凝固温度的辅助加热机构。

5. 发明申请

US20110305891A1 METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT PRODUCTIVITY AND SURFACE QUALITY USING CONTINUOUS CASTING 审中-公开
标题翻译：使用连续铸造制造具有优异生产率和表面质量的硅基材的方法和装置
公开(公告)号：US20110305891A1
公开(公告)日：2011-12-15
申请号：US13158516
申请日：2011-06-13
申请人： Bo-Yun JANG , Jin-Seok LEE , Young-Soo AHN
发明人： Bo-Yun JANG , Jin-Seok LEE , Young-Soo AHN
IPC分类号： C01B33/02 , B32B5/00 , C01B33/021 , B28B5/02
CPC分类号： C30B28/10 , C30B15/007 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, and a method for manufacturing a silicon substrate using the same. The apparatus includes a raw silicon feeder, a silicon melting unit melting raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer board transferring the tapped silicon melt, and a silicon substrate forming unit cooling the silicon melt transferred by the transfer board to form a silicon substrate. The molten silicon stored in the molten silicon storage unit has a surface temperature of 1300˜1500° C., the transfer board is preheated to 700˜1400° C., and a transfer time of the silicon substrate after tapping the molten silicon from the molten silicon storage unit is 0.5˜3.5 seconds.
摘要翻译：本公开内容提供了一种使用连续铸造制造用于太阳能电池的硅衬底的装置，以及使用该装置制造硅衬底的方法。该装置包括原硅进料器，熔融原料硅以形成熔融硅的硅熔融单元，存储从硅熔融单元供应的熔融硅的熔融硅储存单元，并且对熔融硅进行开采以提供具有恒定厚度的硅熔体，转移层的硅熔体的转移板，以及冷却由转印板转移的硅熔体形成硅衬底的硅衬底形成单元。存储在熔融硅储存单元中的熔融硅的表面温度为1300〜1500℃，将转印板预热至700〜1400℃，从硅中分离出熔融硅后的硅基板的转印时间熔融硅储存单元为0.5〜3.5秒。

6. 发明申请

US20100203334A1 APPARATUS FOR PRODUCING SILICON NANOCRYSTALS USING INDUCTIVELY COUPLED PLASMA 有权
标题翻译：使用电感耦合等离子体生产硅纳米晶的装置
公开(公告)号：US20100203334A1
公开(公告)日：2010-08-12
申请号：US12605838
申请日：2009-10-26
申请人： Bo-Yun JANG , Chang-Hyun Ko , Jeong-Chul Lee , Joon-Soo Kim , Joo-Seok Park
发明人： Bo-Yun JANG , Chang-Hyun Ko , Jeong-Chul Lee , Joon-Soo Kim , Joo-Seok Park
IPC分类号： B01J19/08 , B32B5/16
CPC分类号： B01J19/088 , B01J2219/0883 , B01J2219/0894 , B82Y30/00 , B82Y40/00 , C01B33/027 , H05H1/46 , H05H2001/4667 , Y10T117/10 , Y10T117/1008 , Y10T428/2982
摘要： The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.
摘要翻译：本公开涉及一种用于制造硅纳米晶体的装置，其可以通过精细调节由ICP线圈产生的等离子体区域来最小化等离子体扩散。该装置包括具有绕其外壁缠绕有ICP线圈的反应器和插入反应器中的管，其中用于形成硅纳米晶体的初级气体和用于硅纳米晶体的表面反应的二次气体通过内侧和外侧。

7. 发明授权

US09040010B2 Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting 有权
标题翻译：用于制造具有可重复使用的用于硅熔化的双坩埚的单晶硅锭的装置
公开(公告)号：US09040010B2
公开(公告)日：2015-05-26
申请号：US13267490
申请日：2011-10-06
申请人： Jin-Seok Lee , Bo-Yun Jang , Young-Soo Ahn
发明人： Jin-Seok Lee , Bo-Yun Jang , Young-Soo Ahn
IPC分类号： C01B33/02 , C30B15/18 , C30B15/30 , C30B15/10 , C30B29/06 , C30B35/00
CPC分类号： C30B29/06 , C30B15/10 , C30B35/002 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
摘要翻译：本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置，其可由于双坩埚结构而被再利用。该装置包括用于硅熔化的双坩埚，其中加入原料硅，加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器，控制双坩埚旋转和升高的坩埚驱动单元，设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。双坩埚具有在其上侧开口的容器形状，并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚坩。

8. 发明申请

US20120288432A1 APPARATUS FOR MANUFACTURING SINGLE CRYSTAL SILICON INGOT HAVING REUSABLE DUAL CRUCIBLE FOR SILICON MELTING 有权
标题翻译：用于制造具有可回收双重可溶性硅熔融的单晶硅的装置
公开(公告)号：US20120288432A1
公开(公告)日：2012-11-15
申请号：US13267490
申请日：2011-10-06
申请人： Jin-Seok LEE , Bo-Yun JANG , Young-Soo AHN
发明人： Jin-Seok LEE , Bo-Yun JANG , Young-Soo AHN
IPC分类号： C01B33/02 , C30B15/18 , C30B15/30 , C30B15/10
CPC分类号： C30B29/06 , C30B15/10 , C30B35/002 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
摘要翻译：本公开提供了一种用于制造具有用于硅熔化的双坩埚的单晶硅锭的装置，其可由于双坩埚结构而被再利用。该装置包括用于硅熔化的双坩埚，其中加入原料硅，加热双坩埚以将原料硅熔化成熔融硅的坩埚加热器，控制双坩埚旋转和升高的坩埚驱动单元，设置在双坩埚上方并拉出浸入熔融硅中的晶种以产生硅锭。双坩埚具有在其上侧开口的容器形状，并且包括具有连接内底和内壁的倾斜表面的石墨坩埚和插入到石墨坩埚中并接收装入双重坩埚的原料硅的石英坩埚坩。

9. 发明申请

US20110303290A1 METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT SURFACE QUALITY USING INERT GAS BLOWING 审中-公开
标题翻译：使用惰性气体吹制制造具有卓越表面质量的硅基材的方法和装置
公开(公告)号：US20110303290A1
公开(公告)日：2011-12-15
申请号：US13158490
申请日：2011-06-13
申请人： Bo-Yun JANG , Jin-Seok LEE , Young-Soo AHN
发明人： Bo-Yun JANG , Jin-Seok LEE , Young-Soo AHN
IPC分类号： H01L31/0264 , H01L31/02 , C03B19/02 , C03B5/23 , C01B33/00
CPC分类号： C30B15/007 , C30B15/06 , C30B15/14 , C30B29/06
摘要： The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm3/h.
摘要翻译：本公开提供了一种用于在连续铸造期间使用惰性气体吹制制造硅衬底以提供优异的生产率和表面质量的方法和装置。该装置包括：原料硅供给装置，通过原料硅供给装置配置的硅熔融单元，熔融原料硅以形成熔融硅;熔融硅储存单元，储存从硅熔融单元供给的熔融硅;以及点击熔融硅以提供具有恒定厚度的硅熔体，转移单元，转移从熔融硅储存单元抽出的硅熔体;以及冷却单元，冷却由转印单元转移的硅熔体。这里，冷却单元通过以0.1〜2.5Nm 3 / h的速度吹入惰性气体来冷却硅熔体。

10. 发明申请

US20100095883A1 GRAPHITE CRUCIBLE FOR SILICON ELECTROMAGNETIC INDUCTION HEATING AND APPARATUS FOR SILICON MELTING AND REFINING USING THE GRAPHITE CRUCIBLE 有权
标题翻译：用于硅电磁感应加热的石墨坩埚和使用石墨坩埚进行硅熔炼和精炼的设备
公开(公告)号：US20100095883A1
公开(公告)日：2010-04-22
申请号：US12568436
申请日：2009-09-28
申请人： Bo Yun JANG , Young Soo Ahn , Joon Soo Kim , Sang Hyun Park , Dong Kook Kim , Gwon Jong Yu
发明人： Bo Yun JANG , Young Soo Ahn , Joon Soo Kim , Sang Hyun Park , Dong Kook Kim , Gwon Jong Yu
IPC分类号： C30B11/00
CPC分类号： C30B13/14 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068
摘要： Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.
摘要翻译：本文公开了一种用于基于电磁感应的硅熔化的石墨坩埚和使用该方法的硅熔化/精炼装置，其通过间接熔化和直接熔融的组合进行熔融操作。坩埚由石墨材料形成，并且包括具有开放的上部的圆柱体，硅原料通过该上部装载到坩埚中，以及由感应线圈包围的外壁，其中多个狭缝通过外壁和坩埚的内壁，使得由在感应线圈中流动的电流产生的电磁力作用于坩埚的内部中心，以防止硅熔体与坩埚的内壁接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式