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1. 发明授权

US09100051B2 Digital broadcasting transmission and reception devices and methods thereof 有权
标题翻译：数字广播发送和接收装置及其方法
公开(公告)号：US09100051B2
公开(公告)日：2015-08-04
申请号：US11386770
申请日：2006-03-23
申请人： Joon-soo Kim , Eui-jun Park , Yong-deok Chang , Hae-joo Jeong
发明人： Joon-soo Kim , Eui-jun Park , Yong-deok Chang , Hae-joo Jeong
IPC分类号： H03K9/00 , H04L27/00 , H03M13/25 , H03M13/29 , H03M13/35 , H03M13/00 , H04N21/2383 , H04N21/438 , H04L1/00
CPC分类号： H03M13/256 , H03M13/2936 , H03M13/356 , H03M13/6538 , H04L1/006 , H04L1/0065 , H04L1/007 , H04L1/0071 , H04N21/2383 , H04N21/4382
摘要： Digital broadcasting transmission and reception devices and methods thereof are provided. The digital broadcasting transmission device includes a randomizer which randomizes a dual transport stream including a normal stream and a robust stream, a supplementary reference signal inserter which inserts a certain supplementary reference signal into a stuffing region included in the randomized dual transport stream, a Reed-Solomon (RS) encoder which adds a parity into a parity region included in the dual transport stream, a robust processor which configures a new dual transport stream by convolution-encoding the robust stream among the dual transport stream, an interleaver which interleaves the configured dual transport stream, a trellis encoder which trellis-encode the interleaved dual transport stream, and a modulator which transmits the trellis-encoded dual transport stream. Accordingly, a sub-channel can be provided in which the robust data and the supplementary reference signal will be transmitted.
摘要翻译：提供了数字广播发送和接收设备及其方法。数字广播发送装置包括随机化随机化的包括正常流和鲁棒流的双传输流，附加参考信号插入器，其将特定补充参考信号插入到包括在随机双重传输流中的填充区域中，Reed- Solomon（RS）编码器，其将奇偶校验添加到包括在双传输流中的奇偶校验区域;鲁棒处理器，其通过对双传输流中的鲁棒流进行卷积编码来配置新的双传输流;交织器，传输流，对编码交织双传输流进行网格编码的网格编码器，以及传输网格编码双传输流的调制器。因此，可以提供其中将发送鲁棒数据和辅助参考信号的子信道。

2. 发明授权

US09001863B2 Graphite crucible for electromagnetic induction melting silicon and apparatus for silicon melting and refining using the graphite crucible 有权
标题翻译：用于电磁感应熔化硅的石墨坩埚和使用石墨坩埚进行硅熔化和精炼的设备
公开(公告)号：US09001863B2
公开(公告)日：2015-04-07
申请号：US13123897
申请日：2008-11-17
申请人： Bo Yun Jang , Young Soo Ahn , Joon Soo Kim , Sang Hyun Park , Dong Kook Kim , Gwon Jong Yu
发明人： Bo Yun Jang , Young Soo Ahn , Joon Soo Kim , Sang Hyun Park , Dong Kook Kim , Gwon Jong Yu
IPC分类号： H05B6/22 , C30B13/14
CPC分类号： C30B13/14
摘要： A graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surround by an induction coil, wherein a plurality of first slits are vertically formed through the outer wall and an inner wall of the crucible, and a plurality of second slits are vertically formed from an edge of the disc-shaped bottom of the crucible toward a center of the bottom.
摘要翻译：一种用于基于电磁感应的硅熔化的石墨坩埚和使用其的硅熔化/精炼装置，其通过间接熔化和直接熔融的组合进行熔融操作。坩埚由石墨材料形成，并且包括具有开放的上部的圆筒体，硅原料通过该上部装入坩埚中，外壁由感应线圈包围，其中多个第一狭缝垂直形成为穿过坩埚的外壁和内壁，并且从坩埚的盘状底部的边缘朝向底部的中心垂直地形成多个第二狭缝。

3. 发明授权

US08997524B2 Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar and method of manufacturing polysilicon using the same 有权
标题翻译：使用虚拟棒制造基于多晶硅的电子束熔化的装置和使用其制造多晶硅的方法
公开(公告)号：US08997524B2
公开(公告)日：2015-04-07
申请号：US13464488
申请日：2012-05-04
申请人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
发明人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
IPC分类号： C01B33/037 , C30B13/22
CPC分类号： C01B33/037 , B01J6/007 , B01J19/085 , B01J2219/00135 , C30B13/22
摘要： Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.
摘要翻译：制造高纯度多晶硅的方法和装置。该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元，其放置在对应于第一电子枪的第一电子束照射区域上，并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。单向凝固单元在其中设置有向下驱动的起始块，以沿向下方向转移熔融硅，并在其下侧形成有冷却通道。起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

4. 发明授权

US08968471B2 Apparatus for manufacturing silicon substrate for solar cell using continuous casting and having contacting solidification and stress relieving regions 有权
标题翻译：用于使用连续铸造制造用于太阳能电池的硅衬底并具有接触固化和应力消除区域的装置
公开(公告)号：US08968471B2
公开(公告)日：2015-03-03
申请号：US13115588
申请日：2011-05-25
申请人： Bo-Yun Jang , Jin-Seok Lee , Joon-Soo Kim
发明人： Bo-Yun Jang , Jin-Seok Lee , Joon-Soo Kim
IPC分类号： C30B15/06 , B22D11/045 , C01B33/037 , C30B11/00 , C30B28/10 , C30B29/06
CPC分类号： B22D11/045 , C01B33/037 , C30B11/001 , C30B11/003 , C30B28/10 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1024 , Y10T117/1092
摘要： The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.
摘要翻译：本公开内容提供一种使用连续铸造制造用于太阳能电池的硅衬底的装置，其可以提高硅衬底的质量，生产率和能量转换效率。该装置包括：坩埚单元，被配置为接收原料硅并具有排出口;加热单元，设置在坩埚单元的外壁和外部底表面，并加热坩埚单元以形成熔融硅;铸造单元，硅进入硅衬底，冷却单元快速冷却硅衬底;以及转移单元，其设置在冷却单元的一端并转移硅衬底。铸造单元包括具有限定在其中以与排出口水平连接的铸造空间的铸造单元主体和预热铸造单元主体以控制硅基板的凝固温度的辅助加热机构。

5. 发明授权

US08794035B2 Apparatus for manufacturing high purity polysilicon using electron-beam melting and method of manufacturing high purity polysilicon using the same 有权
标题翻译：使用电子束熔化制造高纯度多晶硅的装置和使用其制造高纯度多晶硅的方法
公开(公告)号：US08794035B2
公开(公告)日：2014-08-05
申请号：US13464416
申请日：2012-05-04
申请人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
发明人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
IPC分类号： C01B33/037 , C30B13/22
CPC分类号： C01B33/037 , C30B11/003 , C30B13/22 , C30B29/06
摘要： Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.
摘要翻译：用于制造高纯度多晶硅的装置和方法。该装置包括保持真空气氛的真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 放置在对应于第一电子枪的第一电子束照射区域上的硅熔融单元，其中粉状原料硅由第一电子束放置和熔化; 以及放置在与第二电子枪相对应的第二电子束照射区域上的单向凝固单元，并且经由流道连接到硅熔融单元。单向凝固单元在其下部形成有冷却通道，并且在其中设置有向下驱动的起始块。

6. 发明申请

US20130291596A1 APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR AND METHOD OF MANUFACTURING POLYSILICON USING THE SAME 有权
标题翻译：用于制造基于多晶硅的电子束熔融的装置和使用其制造多晶硅的方法
公开(公告)号：US20130291596A1
公开(公告)日：2013-11-07
申请号：US13464488
申请日：2012-05-04
申请人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
发明人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
IPC分类号： C01B33/02 , B01J19/08 , C01B33/037
CPC分类号： C01B33/037 , B01J6/007 , B01J19/085 , B01J2219/00135 , C30B13/22
摘要： Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.
摘要翻译：制造高纯度多晶硅的方法和装置。该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元，其放置在对应于第一电子枪的第一电子束照射区域上，并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。单向凝固单元在其中设置有向下驱动的起始块，以沿向下方向转移熔融硅，并在其下侧形成有冷却通道。起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

7. 发明申请

US20130263777A1 APPARATUS FOR MANUFACTURING SILICON SUBSTRATE 审中-公开
标题翻译：制造硅基板的装置
公开(公告)号：US20130263777A1
公开(公告)日：2013-10-10
申请号：US13459109
申请日：2012-04-28
申请人： Jin Seok Lee , Bo Yun Jang , Joon Soo Kim , Young Soo Ahn
发明人： Jin Seok Lee , Bo Yun Jang , Joon Soo Kim , Young Soo Ahn
IPC分类号： C30B15/06 , C30B15/30 , C30B15/10
CPC分类号： C30B15/06 , C30B28/10 , C30B29/06 , C30B35/002 , Y10T117/1048
摘要： There is disclosed an apparatus for manufacturing a silicon substrate including a crucible part, a molding part extended from an outlet of the crucible part, the molding part comprising a molding space where a silicon substrate is formed, and a dummy bar inserted in the molding space from a predetermined portion of the molding part, wherein the dummy bar is formed of a single-crystalline material.
摘要翻译：公开了一种用于制造硅基板的装置，其包括坩埚部分，从坩埚部分的出口延伸的模制部分，模制部分包括形成硅基板的模制空间和插入模制空间中的虚拟棒从模制部件的预定部分，其中虚拟棒由单晶材料形成。

8. 发明授权

US08489963B2 Device for processing streams and method thereof 有权
标题翻译：流处理装置及其方法
公开(公告)号：US08489963B2
公开(公告)日：2013-07-16
申请号：US12764672
申请日：2010-04-21
申请人： Chan-sub Park , Hae-joo Jeong , June-hee Lee , Joon-soo Kim , Jung-pil Yu , Eui-jun Park
发明人： Chan-sub Park , Hae-joo Jeong , June-hee Lee , Joon-soo Kim , Jung-pil Yu , Eui-jun Park
IPC分类号： H03M13/00
CPC分类号： H03M13/2909 , H03M13/09 , H03M13/1515 , H03M13/2732 , H03M13/2906 , H03M13/6356
摘要： A device for processing streams is disclosed. The device includes a stream arranging unit which stacks and rearranges a stream, and a dummy inserting unit which inserts a dummy into the rearranged stream. The device may further include a convolutional interleaver which interleaves the stream with a dummy or an RS encoder and a CRC encoder.
摘要翻译：公开了一种用于处理流的设备。该装置包括堆叠和重新排列流的流排列单元和将虚拟物插入重排流中的虚拟插入单元。该装置还可以包括卷积交织器，其与虚拟或RS编码器和CRC编码器交织流。

9. 发明授权

US08458554B2 Device for processing streams and method thereof 有权
公开(公告)号：US08458554B2
公开(公告)日：2013-06-04
申请号：US12670775
申请日：2008-07-25
申请人： Chan-sub Park , Hae-joo Jeong , June-hee Lee , Joon-soo Kim , Jung-pil Yu , Eui-jun Park
发明人： Chan-sub Park , Hae-joo Jeong , June-hee Lee , Joon-soo Kim , Jung-pil Yu , Eui-jun Park
IPC分类号： H03M13/00
CPC分类号： H03M13/2909 , H03M13/09 , H03M13/1515 , H03M13/2732 , H03M13/2906 , H03M13/6356
摘要： A device for processing streams is disclosed. The device includes a stream arranging unit which stacks and rearranges a stream, and a dummy inserting unit which inserts a dummy into the rearranged stream. The device may further include a convolutional interleaver which interleaves the stream with a dummy or an RS encoder and a CRC encoder.

10. 发明申请

US20130069644A1 METHOD OF CONTROLLING AN MRI SYSTEM AND AN APPARATUS THEREFOR 有权
标题翻译：控制MRI系统及其设备的方法
公开(公告)号：US20130069644A1
公开(公告)日：2013-03-21
申请号：US13474909
申请日：2012-05-18
申请人： Hyug-rae CHO , Joon-soo KIM , Ju-hyung LEE , Young-cheol KWON
发明人： Hyug-rae CHO , Joon-soo KIM , Ju-hyung LEE , Young-cheol KWON
IPC分类号： G01R33/48
CPC分类号： G01R33/36 , G01R33/3621 , G01R33/3657 , G01R33/3692
摘要： A magnetic resonance imaging (MRI) system includes a radio frequency (RF) coil which receives timing information about a pulse sequence and stores the timing information in a memory of the RF coil. Then, when an RF excitation signal is transmitted, the RF coil performs decoupling. When a magnetic resonance (MR) echo signal is generated, the RF coil receives the MR echo signal and transmits the MR echo signal to a central controlling apparatus through a wireless channel. When a transmission error arises, the RF coil retransmits corresponding data in an idle time when the RF excitation signal is not transmitted or the MR echo signal is not generated. Thus, the RF coil is prevented from being damaged by the RF excitation signal and prevents the quality of an MR image from deteriorating compared to a synchronization-type communication method.
摘要翻译：磁共振成像（MRI）系统包括射频（RF）线圈，其接收关于脉冲序列的定时信息，并将定时信息存储在RF线圈的存储器中。然后，当发射RF激励信号时，RF线圈进行解耦。当产生磁共振（MR）回波信号时，RF线圈接收MR回波信号，并通过无线信道将MR回波信号发送到中央控制装置。当发生传输错误时，RF线圈在没有发送RF激励信号或没有产生MR回波信号的空闲时间内重新发送对应的数据。因此，与同步型通信方法相比，防止RF线圈被RF激励信号损坏，并且防止MR图像的质量恶化。

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