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    • 1. 发明授权
    • Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool
    • 用于获得光刻模拟工具的短程火炬模型参数的方法,程序产品和设备
    • US07818151B2
    • 2010-10-19
    • US11415423
    • 2006-05-02
    • Tamer CoskunSangbong ParkJang Fung ChenBernd Geh
    • Tamer CoskunSangbong ParkJang Fung ChenBernd Geh
    • G06F17/50
    • G03F7/70941G03F7/705
    • A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.
    • 公开了一种获得表示短距离火炬的短距离火炬模型参数的过程,其降低了由光刻工具产生的图像的对比度。 从图像中测量短程光晕,以获得测量的短距离闪光数据。 基于短距离火炬模型参数进行模拟,以获得模拟的短距离火炬数据。 将模拟的短程火炬数据与测量的短距离火炬数据进行比较。 根据比较结果确定模拟中使用的短程火炬模型参数是否合适。 如果用于模拟的短距离火炬模型参数不合适,则根据测得的短距离数据和模拟的短距离火炬数据优化短距离火炬模型参数。
    • 6. 发明授权
    • Method and apparatus for performing dark field double dipole lithography (DDL)
    • 用于进行暗场双偶极子光刻(DDL)的方法和装置
    • US07981576B2
    • 2011-07-19
    • US12890494
    • 2010-09-24
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • G03F1/00G03F1/14G06F17/50
    • G03F1/36G03F1/70G03F7/70125G03F7/70466
    • A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
    • 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。
    • 8. 发明授权
    • Method and apparatus for performing dark field double dipole lithography (DDL)
    • 用于进行暗场双偶极子光刻(DDL)的方法和装置
    • US08632930B2
    • 2014-01-21
    • US13155259
    • 2011-06-07
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • G03F1/36
    • G03F1/36G03F1/70G03F7/70125G03F7/70466
    • A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
    • 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。
    • 9. 发明授权
    • Method and apparatus for performing dark field double dipole lithography (DDL)
    • 用于进行暗场双偶极子光刻(DDL)的方法和装置
    • US07824826B2
    • 2010-11-02
    • US11783261
    • 2007-04-06
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • G03F1/00G03F1/14G03F7/20G06F17/50
    • G03F1/36G03F1/70G03F7/70125G03F7/70466
    • A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.This method is enabled by a non-transitory computer readable medium configured to store program instructions for execution by a processor. The complementary dark field masks are used for patterning a layer of radiation-sensitive material in a device manufacturing method.
    • 一种产生用于暗场双偶极成像过程的互补暗场掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。 该方法由配置为存储用于由处理器执行的程序指令的非暂时计算机可读介质启用。 互补暗场掩模用于在器件制造方法中图案化一层辐射敏感材料。
    • 10. 发明授权
    • Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems
    • 执行抗蚀剂工艺校准/优化和DOE优化的方法,以提供不同光刻系统之间的OPE匹配
    • US07116411B2
    • 2006-10-03
    • US10926400
    • 2004-08-26
    • Sangbong ParkJang Fung ChenArmin Liebchen
    • Sangbong ParkJang Fung ChenArmin Liebchen
    • G01B9/00G03B27/32G03C5/00
    • G03F7/70458G03F7/70108G03F7/705G03F7/70525
    • A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.
    • 一种优化用于多个光刻系统的工艺的方法。 该方法包括以下步骤:(a)使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; (b)选择待利用的第二光刻系统,以利用所述给定的处理对所述目标图案进行成像,所述第二光刻系统能够被配置为具有多个衍射光学元件中的一个衍射光学元件,所述多个衍射光学元件中的每一个具有对应的变量 用于优化给定衍射光学元件的性能的参数; (c)选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件,校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及(d)通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能,所述遗传算法识别所述多​​个衍射光学元件中所选择的一个的参数的值,其优化所述目标图案的成像 。