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    • 3. 发明授权
    • Semiconductor nanocrystals
    • 半导体纳米晶体
    • US08652360B2
    • 2014-02-18
    • US12555022
    • 2009-09-08
    • Isabelle Texier-NoguesAude Bernardin
    • Isabelle Texier-NoguesAude Bernardin
    • H01B1/00H01B1/12H01R4/42
    • G01N33/587B82Y15/00C07D249/16C07D498/08G01N33/588
    • The present invention aims to provide a method of use for surface-modifying a semiconductor nanocrystal comprising at least the steps consisting in having a semiconductor nanocrystal, the organic coating layer of which is provided, at the outer surface of the nanocrystal, with at least one reactive group G1 that reacts according to a cycloaddition reaction of click chemistry type; and bringing said nanocrystal together with an adjoining material provided at the surface with at least one G2 group complementary to the G1 group with respect to said click chemistry reaction, under conditions favorable to the interaction of said G1 and G2 groups, characterized in that said G1 and G2 groups are respectively an azide and a strained cycloalkynyl radical, or vice versa.
    • 本发明旨在提供一种用于表面修饰半导体纳米晶体的方法,该方法至少包括在纳米晶体的外表面具有半导体纳米晶体的步骤,其中所述半导体纳米晶体在其纳米晶体的外表面上具有至少一个 根据点击化学类型的环加成反应反应的反应性基团G1; 以及在有利于所述G1和G2基团的相互作用的条件下,使所述纳米晶体与在表面处提供有相对于所述点击化学反应互补的至少一个G2基团的邻接材料一起引入,其特征在于所述G1 和G2基团分别是叠氮化物和应变的环炔基基团,反之亦然。
    • 8. 发明申请
    • SEMICONDUCTOR NANOCRYSTALS
    • US20100200813A1
    • 2010-08-12
    • US12555022
    • 2009-09-08
    • Isabelle Texier-NoguesAude Bernardin
    • Isabelle Texier-NoguesAude Bernardin
    • H01B1/12H01L21/302
    • G01N33/587B82Y15/00C07D249/16C07D498/08G01N33/588
    • The present invention aims to provide a method of use for surface-modifying a semiconductor nanocrystal comprising at least the steps consisting in having a semiconductor nanocrystal, the organic coating layer of which is provided, at the outer surface of the nanocrystal, with at least one reactive group G1 that reacts according to a cycloaddition reaction of click chemistry type; and bringing said nanocrystal together with an adjoining material provided at the surface with at least one G2 group complementary to the G1 group with respect to said click chemistry reaction, under conditions favourable to the interaction of said G1 and G2 groups, characterized in that said G1 and G2 groups are respectively an azide and a strained cycloalkynyl radical, or vice versa.
    • 本发明的目的在于提供一种用于表面修饰半导体纳米晶体的方法,该方法至少包括在纳米晶体的外表面上具有半导体纳米晶体的步骤,该半导体纳米晶体在其纳米晶体的外表面上具有至少一个 根据点击化学类型的环加成反应反应的反应性基团G1; 以及在有利于所述G1和G2基团的相互作用的条件下,使所述纳米晶体与在表面处提供有相对于所述点击化学反应互补的至少一个G2基团的邻接材料一起引入,其特征在于所述G1 和G2基团分别是叠氮化物和应变的环炔基基团,反之亦然。