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    • 10. 发明授权
    • Circuit for differential current sensing with reduced static power
    • 具有降低静态功耗的差分电流检测电路
    • US07279939B2
    • 2007-10-09
    • US11113614
    • 2005-04-25
    • Wayne BurlesonVishak VenkotromanAtul Maheshwari
    • Wayne BurlesonVishak VenkotromanAtul Maheshwari
    • G01R19/00
    • H03F3/45G11C7/062H03K3/356121H03K3/356165
    • Returning to FIG. 2, sense circuit 201 represents the circuit that must sense the signaling on an interconnect. NMOS device 202 is always on so that there is a continuous path to ground whenever PMOS driver 204 is on. Since leakage power is an order of magnitude less than static and dynamic power it can be omitted for clarity, although it should be noted that dynamic power increases with respect to line length since the interconnect capacitance increases as line length increases. Static power is due to flow of static current across the two resistances shown in FIG. 2, interconnect resistance 206 and the resistance of transistors 102 and 104 from FIG. 1, represented by the resistance of equivalent NMOS transistor 208 of FIG. 2.
    • 返回到图 如图2所示,感测电路201表示必须感测互连上的信令的电路。 NMOS器件202总是导通,使得每当PMOS驱动器204导通时,存在连续的接地路径。 由于泄漏功率比静态和动态功率小一个数量级,因此为了清楚起见,可以省略泄漏功率,尽管应该注意到,随着线路长度增加,互连电容增加,动态功率相对于线路长度增加。 静态功率是由于图2所示的两个电阻之间的静电流的流动引起的。 2,互连电阻206和来自图2的晶体管102和104的电阻。 由图1的等效NMOS晶体管208的电阻表示。 2。