基本信息:
- 专利标题： Homogenous Die Stacking With Increased Element Density
- 申请号：US17484922 申请日：2021-09-24
- 公开(公告)号：US20220013488A1 公开(公告)日：2022-01-13
- 发明人： Mahesh K. Kumashikar , Dheeraj Subbareddy , Ankireddy Nalamalpu , MD Altaf Hossain , Atul Maheshwari
- 申请人： Mahesh K. Kumashikar , Dheeraj Subbareddy , Ankireddy Nalamalpu , MD Altaf Hossain , Atul Maheshwari
- 申请人地址： IN Bangalore; US OR Portland; US OR Portland; US OR Portland; US OR Portland
- 专利权人： Mahesh K. Kumashikar,Dheeraj Subbareddy,Ankireddy Nalamalpu,MD Altaf Hossain,Atul Maheshwari
- 当前专利权人： Mahesh K. Kumashikar,Dheeraj Subbareddy,Ankireddy Nalamalpu,MD Altaf Hossain,Atul Maheshwari
- 当前专利权人地址： IN Bangalore; US OR Portland; US OR Portland; US OR Portland; US OR Portland
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L25/065 ; H01L23/48 ; H01L25/00
摘要：
An integrated circuit device includes multiple microbumps and a top programmable fabric die including a first programmable fabric and a first microbump interface coupled to the multiple microbumps. The integrated circuit device also includes a base programmable fabric die having a second programmable fabric and a second microbump interface coupled to the first microbump interface via a coupling to the multiple microbumps. The top programmable fabric die and the base programmable fabric die have a same design. Moreover, the top programmable fabric die and the base programmable fabric die are arranged in a three-dimensional die arrangement with the top programmable fabric die flipped above the base programmable fabric die.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |