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1. 发明授权

US08968923B2 Lithium ion secondary battery 有权
标题翻译：锂离子二次电池
公开(公告)号：US08968923B2
公开(公告)日：2015-03-03
申请号：US13643207
申请日：2011-03-09
申请人： Wataru Ogihara , Atsushi Itou , Tomokazu Yamane , Fumihiro Haga
发明人： Wataru Ogihara , Atsushi Itou , Tomokazu Yamane , Fumihiro Haga
IPC分类号： H01M6/04 , H01M10/26 , H01M10/0525 , H01M4/134 , H01M4/505 , H01M4/525 , H01M10/0568
CPC分类号： H01M10/0525 , H01M4/134 , H01M4/386 , H01M4/505 , H01M4/525 , H01M10/0568 , Y02E60/122 , Y02T10/7011
摘要： Disclosed is a lithium ion secondary battery having a positive electrode, a negative electrode and a non-aqueous electrolyte composition (electrolytic solution), characterized in that: the positive electrode includes a positive electrode active material represented by: aLi[Li1/3M12/3]O2.(1−a)LiM2O2 (where M1 represents at least one kind of metal element selected from the group consisting of Mn, Ti, Zr and V; M2 represents at least one kind of metal element selected from the group consisting of Ni, Co, Mn, Al, Cr, Fe, V, Mg and Zn; and a represents a composition ratio and satisfies a relationship of 0
摘要翻译：公开了具有正极，负极和非水电解质组合物（电解液）的锂离子二次电池，其特征在于，所述正极包括由以下物质表示的正极活性物质：Li [Li1 / 3M12 / 3 ] O 2（1-a）LiM 2 O 2（其中，M1表示选自Mn，Ti，Zr和V中的至少一种金属元素; M2表示选自Ni ，Co，Mn，Al，Cr，Fe，V，Mg和Zn; a表示组成比，满足0

2. 发明授权

US08632688B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08632688B2
公开(公告)日：2014-01-21
申请号：US13236800
申请日：2011-09-20
申请人： Masaru Izawa , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
发明人： Masaru Izawa , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01J37/32972 , H01J37/32899 , H01L21/32137
摘要： In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.
摘要翻译：在等离子体处理装置中，其中通过匹配箱向电抗器内的处理室内的设置在样品台中的电极提供射频功率，通过匹配在at的数据值的转换点处的功率的特定值来处理晶片特征数据中包括等离子体的发光强度，其时间变化的大小，匹配箱的匹配位置以及提供给电极的射频功率的电压值的变化等特性数据中的至少两种，在处理期间利用通过使用在不同反应器中的相同晶片上执行的处理期间检测到的特征数据检测到的值而获得多个值的功率，多个处理室或等离子体之间的状态之间的差异的半导体处理装置或反应堆。

3. 发明申请

US20130045604A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130045604A1
公开(公告)日：2013-02-21
申请号：US13235666
申请日：2011-09-19
申请人： Kenji MAEDA , Atsushi Itou , Masaru Izawa
发明人： Kenji MAEDA , Atsushi Itou , Masaru Izawa
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32146 , H01J37/32935
摘要： A plasma processing apparatus which can adjust ion energy on a wafer to a value in a desired range to perform machining with high precision or processing stably for a long time is provided. To the plasma processing apparatus which processes a wafer mounted on a mounting surface of an upper portion of a stage using plasma formed in a processing chamber while supplying radio frequency power from a power supply to an electrode disposed in the stage a detector disposed on an outer circumferential side of the mounting surface of the stage to detect a differential component Vpp between the maximum value and the minimum value and a DC component Vdc from a value of a bias voltage formed thereabove and a controller to adjust an output of the radio frequency bias power to make a value of Vpp/2+|Vdc| constant based on an output from the detector are provided.
摘要翻译：提供了一种可以将晶片上的离子能量调整到期望范围内的值以进行高精度或长时间稳定地进行加工的等离子体处理装置。对于等离子体处理装置，其使用在处理室中形成的等离子体处理安装在台上部的安装表面上的晶片，同时将电力从电源提供给设置在该级中的电极，设置在外部的检测器检测在该最大值和最小值之间的差分分量Vpp和从其上形成的偏置电压的值的DC分量Vdc，以及调节射频偏置功率的输出的控制器得到Vpp / 2 + | Vdc |的值提供了基于检测器输出的常数。

4. 发明申请

US20130045547A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130045547A1
公开(公告)日：2013-02-21
申请号：US13236800
申请日：2011-09-20
申请人： Masaru IZAWA , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
发明人： Masaru IZAWA , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
IPC分类号： H01L21/66 , C23F1/08
CPC分类号： H01J37/32972 , H01J37/32899 , H01L21/32137
摘要： In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.
摘要翻译：在等离子体处理装置中，其中通过匹配箱向电抗器内的处理室内的设置在样品台中的电极提供射频功率，通过匹配在at的数据值的转换点处的功率的特定值来处理晶片特征数据中包括等离子体的发光强度，其时间变化的大小，匹配箱的匹配位置以及提供给电极的射频功率的电压值的变化等特性数据中的至少两种，在处理期间利用通过使用在不同反应器中的相同晶片上执行的处理期间检测到的特征数据检测到的值而获得多个值的功率，多个处理室或等离子体之间的状态之间的差异的半导体处理装置或反应堆。

5. 发明申请

US20100167972A1 CLEANING SOLUTION FOR SUBSTRATE FOR SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的衬底的清洁溶液和用于生产用于半导体器件的衬底的工艺
公开(公告)号：US20100167972A1
公开(公告)日：2010-07-01
申请号：US12600545
申请日：2008-05-16
申请人： Yasuhiro Kawase , Makoto Ikemoto , Atsushi Itou , Matoko Ishikawa
发明人： Yasuhiro Kawase , Makoto Ikemoto , Atsushi Itou , Matoko Ishikawa
IPC分类号： C11D3/20
CPC分类号： H01L21/0206 , C11D3/2075 , C11D11/0047 , H01L21/02074
摘要： To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor.A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.
摘要翻译：为了提供一种用于半导体器件用基板的清洗液，其具有除去颗粒，有机污染物，金属污染物以及附着在基板表面上的有机物和金属的复合污染物的能力优异，从而基板表面可以是高度的清洁，不被腐蚀。特别是提供一种清洁液，该清洗溶液清洁低介电常数（Low-k）材料的能力优异，其中由于疏水性而容易排斥液体并且其中去除颗粒的能力差。一种半导体器件用基板用清洗液，其特征在于，含有以下成分（A）和（B）：（A）有机酸（B）HLB值为5〜13以下的非离子性表面活性剂。

6. 再颁专利

USRE39823E1 Vacuum processing operating method with wafers, substrates and/or semiconductors 失效
标题翻译：具有晶片，基板和/或半导体的真空处理操作方法
公开(公告)号：USRE39823E1
公开(公告)日：2007-09-11
申请号：US10060304
申请日：2002-02-01
申请人： Shigekazu Kato , Kouji Nishihata , Tsunehiko Tsubone , Atsushi Itou
发明人： Shigekazu Kato , Kouji Nishihata , Tsunehiko Tsubone , Atsushi Itou
IPC分类号： F26B5/04
CPC分类号： H01L21/67748 , C23C14/564 , H01L21/67028 , H01L21/67167 , H01L21/67253
摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dirty-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.
摘要翻译：本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。当真空处理室被清洁脏时，虚设基板通过基板输送装置从虚设基板存储装置转移到真空处理室中，所述虚拟基板存储装置与用于存储待处理基板的存储装置一起设置在空气气氛中，通过产生等离子体对真空处理室进行干洗。在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。此外，用于干洗的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。

7. 再颁专利

USRE39776E1 Vacuum processing apparatus and operating method with wafers, substrates and/or semiconductors 失效
标题翻译：具有晶片，基板和/或半导体的真空处理装置和操作方法
公开(公告)号：USRE39776E1
公开(公告)日：2007-08-21
申请号：US10062618
申请日：2002-02-05
申请人： Shigekazu Kato , Kouji Nishihata , Tsunehiko Tsubone , Atsushi Itou
发明人： Shigekazu Kato , Kouji Nishihata , Tsunehiko Tsubone , Atsushi Itou
IPC分类号： F26B5/04
CPC分类号： H01L21/67748 , C23C14/564 , H01L21/67028 , H01L21/67167 , H01L21/67253
摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used to dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.
摘要翻译：本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。当真空处理室被干洗时，虚设基板通过基板传送装置从设置在空气气氛中的虚设基板存储装置与用于存储待处理基板的存储装置一起转移到真空处理室中，通过产生等离子体对真空处理室进行干洗。在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。此外，用于干燥的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。

8. 发明申请

US20070166632A1 POSITIVE PHOTOSENSITIVE INSULATING RESIN COMPOSITION AND CURED PRODUCT THEREOF 有权
标题翻译：阳离子光敏绝缘树脂组合物及其固化产品
公开(公告)号：US20070166632A1
公开(公告)日：2007-07-19
申请号：US11692486
申请日：2007-03-28
申请人： Katsumi Inomata , Takashi Nishioka , Atsushi Itou , Masayoshi Suzuki , Shin-ichirou Iwanaga
发明人： Katsumi Inomata , Takashi Nishioka , Atsushi Itou , Masayoshi Suzuki , Shin-ichirou Iwanaga
IPC分类号： G03C3/00
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0233 , G03F7/0236
摘要： Positive photosensitive insulating resin compositions of the invention contain at least (A) an alkali soluble resin having a phenolic hydroxyl group, (B) a compound having a quinonediazido group, (C) crosslinked fine particles, (D) a compound containing at least two alkyletherified amino groups in the molecule, and (F) a solvent The resin compositions have excellent resolution, electrical insulating properties and thermal shock properties. Cured products of the invention are obtained by curing these resin compositions, and they show good adhesive properties.
摘要翻译：本发明的正性感光性绝缘性树脂组合物至少含有（A）具有酚性羟基的碱溶性树脂，（B）具有醌二叠氮基的化合物，（C）交联微粒，（D）含有至少两个分子中的烷基醚化氨基，（F）溶剂树脂组合物具有优异的分辨率，电绝缘性和热冲击性。通过固化这些树脂组合物获得本发明的固化产物，它们显示出良好的粘合性能。

9. 发明申请

US20070135322A1 SUBSTRATE SURFACE CLEANING LIQUID MEDIUM AND CLEANING METHOD 审中-公开
标题翻译：基板表面清洗液体和清洗方法
公开(公告)号：US20070135322A1
公开(公告)日：2007-06-14
申请号：US11678912
申请日：2007-02-26
申请人： Hitoshi MORINAGA , Hideaki Mochizuki , Atsushi Itou
发明人： Hitoshi MORINAGA , Hideaki Mochizuki , Atsushi Itou
IPC分类号： C11D7/32
CPC分类号： C11D3/044 , C11D1/72 , C11D3/3947 , C11D11/0047 , C11D11/007 , C23G1/18 , H01L21/02052
摘要： A substrate surface cleaning liquid medium and a cleaning method using the cleaning liquid medium are capable of removing finely particulate contaminants more efficiently than conventional techniques from substrates for devices in the production of semiconductor devices, display devices, etc., which cleaning liquid medium contains the following ingredients (A), (B), (C), and (D), has a pH of 9 or higher, and a content of ingredient (C) of 0.01 to 4% by weight: (A) an ethylene oxide addition type surfactant which has an optionally substituted hydrocarbon group and a polyoxyethylene group in the same molecular structure and in which the ratio of the number of carbon atoms contained in the hydrocarbon group (m) to the number of oxyethylene groups in the polyoxyethylene group (n), m/n, is m/n≦1.5, (B) an alkali ingredient, (C) hydrogen peroxide, and (D) water.
摘要翻译：基板表面清洁液体介质和使用清洁液体介质的清洁方法能够比常规技术更有效地除去细颗粒污染物，从用于生产半导体器件，显示装置等的器件的衬底，清洁液体介质包含以下成分（A），（B），（C）和（D）的pH为9以上，成分（C）的含量为0.01〜4重量％：（A）具有相同分子结构的任选取代的烃基和聚氧乙烯基的烃类表面活性剂，其中烃基（m）中所含的碳原子数与聚氧乙烯基（n）中的氧化乙烯基的数量的比例， m / n为m / n <= 1.5，（B）碱成分，（C）过氧化氢和（D）水。

10. 发明授权

US06880264B2 Vacuum processing apparatus and operating method therefor 失效
公开(公告)号：US06880264B2
公开(公告)日：2005-04-19
申请号：US10682901
申请日：2003-10-14
申请人： Shigekazu Kato , Kouji Nishihata , Tsunehiko Tsubone , Atsushi Itou
发明人： Shigekazu Kato , Kouji Nishihata , Tsunehiko Tsubone , Atsushi Itou
IPC分类号： B01J3/00 , B41J2/36 , B41J2/365 , C23C14/56 , H01L21/00 , H01L21/677 , F26B5/04
CPC分类号： H01L21/67748 , B01J3/006 , B41J2/36 , B41J2/365 , C23C14/564 , H01L21/67028 , H01L21/67167 , H01L21/67253 , H01L21/67736 , Y10S134/902 , Y10S414/137 , Y10S414/139 , Y10S414/14
摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

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