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1. 发明申请

US20120251427A1 REACTOR AND METHOD FOR PRODUCTION OF SILICON 审中-公开
标题翻译：用于生产硅的反应器和方法
公开(公告)号：US20120251427A1
公开(公告)日：2012-10-04
申请号：US13508604
申请日：2010-11-25
申请人： Josef Filtvedt , Werner O. Filtvedt , Arve Holt
发明人： Josef Filtvedt , Werner O. Filtvedt , Arve Holt
IPC分类号： B01J19/00 , C23C16/24 , B01J19/28
摘要： Reactor for production of silicon, comprising a reactor volume, distinctive in that the reactor comprises or is operatively arranged to at least one means for setting a silicon-containing reaction gas for chemical vapor deposition (CVD) into rotation inside the reactor volume. Method for production of silicon.
摘要翻译：用于生产硅的反应器包括反应器体积，其特征在于反应器包括或可操作地布置在至少一种用于将用于化学气相沉积（CVD）的含硅反应气体设置为在反应器体积内旋转的装置。生产硅的方法

2. 发明授权

US09440210B2 Gas distribution arrangement for a fluidized bed 有权
标题翻译：流化床的气体分配布置
公开(公告)号：US09440210B2
公开(公告)日：2016-09-13
申请号：US14116939
申请日：2012-05-11
申请人： Werner Filtvedt , Arve Holt
发明人： Werner Filtvedt , Arve Holt
IPC分类号： C01B33/02 , B01J8/18 , B01J8/44 , C01B33/027 , C01B33/107 , B05B1/00 , C01B33/029
CPC分类号： B01J8/1872 , B01J8/1827 , B01J8/44 , B01J2219/00252 , B05B1/005 , C01B33/027 , C01B33/029 , C01B33/107
摘要： Embodiments provide a gas distribution arrangement, a device for handling a chemical reaction comprising such a gas distribution arrangement and a method of providing a chemical reaction chamber with a gas. The distribution arrangement comprises a distribution plate for separating a chemical reaction chamber from a gas inlet area and having a first side arranged to face the chemical reaction chamber and a second side arranged to face the gas inlet area and comprising a set of through holes stretching between the first and the second side, where the first side of the plate comprises a first material surrounding the holes and having a first thermal conductivity, and the plate also comprises a second material forming a base structure also surrounding the holes and having a second thermal conductivity.
摘要翻译：实施例提供了气体分配装置，用于处理包括这种气体分配装置的化学反应的装置以及向化学反应室提供气体的方法。分配装置包括分配板，用于将化学反应室与气体入口区分离，并且具有布置成面向化学反应室的第一侧和布置成面对气体入口区域的第二侧，并且包括一组通孔，第一侧和第二侧，其中板的第一侧包括围绕孔并具有第一导热性的第一材料，并且该板还包括形成还围绕孔并具有第二导热性的基底结构的第二材料。

3. 发明申请

US20140127116A1 Gas Distribution Arrangement for a Fluidized Bed 有权
标题翻译：流化床的气体分布布置
公开(公告)号：US20140127116A1
公开(公告)日：2014-05-08
申请号：US14116939
申请日：2012-05-11
申请人： Werner Filtvedt , Arve Holt
发明人： Werner Filtvedt , Arve Holt
IPC分类号： B01J8/18 , C01B33/027 , B05B1/00
CPC分类号： B01J8/1872 , B01J8/1827 , B01J8/44 , B01J2219/00252 , B05B1/005 , C01B33/027 , C01B33/029 , C01B33/107
摘要： Embodiments provide a gas distribution arrangement, a device for handling a chemical reaction comprising such a gas distribution arrangement and a method of providing a chemical reaction chamber with a gas. The distribution arrangement comprises a distribution plate for separating a chemical reaction chamber from a gas inlet area and having a first side arranged to face the chemical reaction chamber and a second side arranged to face the gas inlet area and comprising a set of through holes stretching between the first and the second side, where the first side of the plate comprises a first material surrounding the holes and having a first thermal conductivity, and the plate also comprises a second material forming a base structure also surrounding the holes and having a second thermal conductivity.
摘要翻译：实施例提供了气体分配装置，用于处理包括这种气体分配装置的化学反应的装置以及向化学反应室提供气体的方法。分配装置包括分配板，用于将化学反应室与气体入口区分离，并且具有布置成面向化学反应室的第一侧和布置成面对气体入口区域的第二侧，并且包括一组通孔，第一侧和第二侧，其中板的第一侧包括围绕孔并具有第一导热性的第一材料，并且该板还包括形成还围绕孔并具有第二导热性的基底结构的第二材料。

4. 发明申请

US20130089490A1 METHOD AND DEVICE 审中-公开
标题翻译：方法和装置
公开(公告)号：US20130089490A1
公开(公告)日：2013-04-11
申请号：US13649673
申请日：2012-10-11
申请人： Wener FILTVEDT , Arve Holt
发明人： Wener FILTVEDT , Arve Holt
IPC分类号： C01B33/027 , B01J19/00 , B82Y40/00 , B82Y30/00
CPC分类号： B01J19/2415 , B01J4/004 , B01J19/002 , B01J19/2475 , B01J2219/00252 , C01B33/027 , C01B33/029
摘要： Method for producing nano- to micro-scale particles of a material by homogeneous thermal decomposition or reduction of a reactant gas (12) containing the material, whereby the method comprises the steps of supplying the reactant gas (12) to a reaction chamber (16) of a reactor via at least one inlet, and a) heating the reactant gas (12) to a temperature sufficient for thermal decomposition or reduction of the reactant gas (12) to take place inside the reaction chamber (16), or b) confining a temperature dependent reaction or reaction sequence involving a plurality of reactants inside the reaction chamber (16). The method comprises the step of supplying a primary gas (22) through a porous membrane (20) constituting at least part of at least one wall of the reaction chamber (16) to provide a protective inert gas boundary to minimize or prevent the deposition of the material on the porous membrane (20).
摘要翻译：通过均质热分解或还原含有该材料的反应气体（12）来生产材料的纳米级微粒子的方法，由此该方法包括以下步骤：将反应气体（12）供应到反应室（16）），以及a）将所述反应气体（12）加热至足以使所述反应气体（12）热分解或还原以在所述反应室（16）内进行的温度，或b）限制在反应室（16）内包含多个反应物的温度依赖性反应或反应顺序。该方法包括通过构成反应室（16）的至少一个壁的至少一部分壁的多孔膜（20）供应初级气体（22）的步骤，以提供保护性的惰性气体边界以最小化或防止沉积多孔膜（20）上的材料。

5. 发明授权

US08916768B2 Surface passivation of silicon based wafers 有权
标题翻译：硅基晶片的表面钝化
公开(公告)号：US08916768B2
公开(公告)日：2014-12-23
申请号：US11918325
申请日：2006-04-12
申请人： Alexander Ulyashin , Andreas Bentzen , Bengt Svensson , Arve Holt , Erik Sauar
发明人： Alexander Ulyashin , Andreas Bentzen , Bengt Svensson , Arve Holt , Erik Sauar
IPC分类号： H01L31/00 , H01L21/31 , H01L21/469 , H01L31/18 , H01L31/0216
CPC分类号： H01L31/02167 , H01L31/028 , H01L31/1804 , H01L31/1864 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.
摘要翻译：通过沉积薄的氢化非晶硅或氢化非晶碳化硅膜，沉积薄的氢化氮化硅膜来降低硅样品的表面复合速度。通过随后的退火进一步降低表面复合速度。要求使用这种用于有效降低表面复合速度的新方法的硅太阳能电池结构。

6. 发明申请

US20090056800A1 Surface Passivation of Silicon Based Wafers 有权
标题翻译：硅基晶片的表面钝化
公开(公告)号：US20090056800A1
公开(公告)日：2009-03-05
申请号：US11918325
申请日：2006-04-12
申请人： Alexander Ulyashin , Andreas Bentzen , Bengt Svensson , Arve Holt , Erik Sauar
发明人： Alexander Ulyashin , Andreas Bentzen , Bengt Svensson , Arve Holt , Erik Sauar
IPC分类号： H01L31/0216 , H01L21/31 , H01L23/58
CPC分类号： H01L31/02167 , H01L31/028 , H01L31/1804 , H01L31/1864 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.
摘要翻译：通过沉积薄的氢化非晶硅或氢化非晶碳化硅膜，沉积薄的氢化氮化硅膜来降低硅样品的表面复合速度。通过随后的退火进一步降低表面复合速度。要求使用这种用于有效降低表面复合速度的新方法的硅太阳能电池结构。

7. 发明申请

US20100319760A1 SEMICONDUCTING COMPONENT 有权
标题翻译：半导体元件
公开(公告)号：US20100319760A1
公开(公告)日：2010-12-23
申请号：US12867070
申请日：2009-02-09
申请人： Alexander G. Ulyashin , Smagul Karazhanov , Arve Holt
发明人： Alexander G. Ulyashin , Smagul Karazhanov , Arve Holt
IPC分类号： H01L31/04 , H01L31/08 , H01L31/18 , H01L29/24 , H01L21/02
CPC分类号： H01L29/24 , H01L21/02521 , H01L21/02631 , H01L31/0321 , H01L31/0328 , H01L31/072 , Y02E10/50
摘要： This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.
摘要翻译：本发明涉及包含至少一层p型或n型材料的层（2,3）的电子半导体元件，其中所述p型或n型材料的层由具有选择的掺杂剂。本发明还涉及生产该组分的方法。

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