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1. 发明授权

US08916768B2 Surface passivation of silicon based wafers 有权
标题翻译：硅基晶片的表面钝化
公开(公告)号：US08916768B2
公开(公告)日：2014-12-23
申请号：US11918325
申请日：2006-04-12
申请人： Alexander Ulyashin , Andreas Bentzen , Bengt Svensson , Arve Holt , Erik Sauar
发明人： Alexander Ulyashin , Andreas Bentzen , Bengt Svensson , Arve Holt , Erik Sauar
IPC分类号： H01L31/00 , H01L21/31 , H01L21/469 , H01L31/18 , H01L31/0216
CPC分类号： H01L31/02167 , H01L31/028 , H01L31/1804 , H01L31/1864 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.
摘要翻译：通过沉积薄的氢化非晶硅或氢化非晶碳化硅膜，沉积薄的氢化氮化硅膜来降低硅样品的表面复合速度。通过随后的退火进一步降低表面复合速度。要求使用这种用于有效降低表面复合速度的新方法的硅太阳能电池结构。

2. 发明申请

US20090056800A1 Surface Passivation of Silicon Based Wafers 有权
标题翻译：硅基晶片的表面钝化
公开(公告)号：US20090056800A1
公开(公告)日：2009-03-05
申请号：US11918325
申请日：2006-04-12
申请人： Alexander Ulyashin , Andreas Bentzen , Bengt Svensson , Arve Holt , Erik Sauar
发明人： Alexander Ulyashin , Andreas Bentzen , Bengt Svensson , Arve Holt , Erik Sauar
IPC分类号： H01L31/0216 , H01L21/31 , H01L23/58
CPC分类号： H01L31/02167 , H01L31/028 , H01L31/1804 , H01L31/1864 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.
摘要翻译：通过沉积薄的氢化非晶硅或氢化非晶碳化硅膜，沉积薄的氢化氮化硅膜来降低硅样品的表面复合速度。通过随后的退火进一步降低表面复合速度。要求使用这种用于有效降低表面复合速度的新方法的硅太阳能电池结构。

3. 发明授权

US06806171B1 Method of producing a thin layer of crystalline material 失效
标题翻译：生产薄层结晶材料的方法
公开(公告)号：US06806171B1
公开(公告)日：2004-10-19
申请号：US10213593
申请日：2002-08-07
申请人： Alexander Ulyashin , Alexander Usenko
发明人： Alexander Ulyashin , Alexander Usenko
IPC分类号： H01L2120
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02658 , H01L21/76259 , Y10S438/96
摘要： A technique for forming a film of crystalline material, preferably silicon. The technique creates a sandwich structure with a weakened region at a selected depth underneath the surface. The weakened region is a layer of porous silicon with high porosity. The high porosity enclosed layer is formed by (1) forming a porous silicon layer with low porosity on surface of the substrate, (2) epitaxial growth of a non-porous layer over the low-porous layer (3) increasing of porosity of the low-porous layer making the said layer hi-porous, (4) cleaving the semiconductor substrate at said high porous layer. The porosity of the buried low-porous layer is increased by hydrogenation techniques, for example, by processing in hydrogen plasma. The process is preferentially used to produce silicon-on-insulator wafers.
摘要翻译：用于形成结晶材料的膜，优选硅的技术。该技术在表面下方的选定深度产生具有弱化区域的夹层结构。弱化区域是具有高孔隙率的多孔硅层。高孔隙率封闭层通过以下方式形成：（1）在衬底的表面上形成具有低孔隙率的多孔硅层，（2）在低孔层（3）上的无孔层的外延生长增加孔隙率使所述层高分子化的多孔层，（4）在所述高多孔层处切割半导体衬底。通过加氢技术，例如通过在氢等离子体中加工，增加了掩埋的低孔层的孔隙率。该方法优选用于制造绝缘体上硅晶片。

4. 发明申请

US20100140619A1 PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20100140619A1
公开(公告)日：2010-06-10
申请号：US12686207
申请日：2010-01-12
申请人： Renat Bilyalov , Alexander Ulyashin , Jef Poortmans , Wolfgang Fahrner
发明人： Renat Bilyalov , Alexander Ulyashin , Jef Poortmans , Wolfgang Fahrner
IPC分类号： H01L31/0376
CPC分类号： H01L31/0745 , H01L31/0284 , H01L31/04 , H01L31/0747 , H01L31/077 , Y02E10/50
摘要： The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
摘要翻译：本发明涉及一种光伏器件，该器件包括第一导电类型的第一半导体材料的第一层，与第一层相反的导电类型的第二半导体材料的第二层和第三层的第三层位于第一层和第二层之间的第三多孔半导体材料。本发明还提供了一种用于制造光伏器件的方法。

5. 发明授权

US07705235B2 Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US07705235B2
公开(公告)日：2010-04-27
申请号：US10658114
申请日：2003-09-08
申请人： Renat Bilyalov , Alexander Ulyashin , Jef Poortmans , Wolfgang Fahrner
发明人： Renat Bilyalov , Alexander Ulyashin , Jef Poortmans , Wolfgang Fahrner
IPC分类号： H01L31/00
CPC分类号： H01L31/0745 , H01L31/0284 , H01L31/04 , H01L31/0747 , H01L31/077 , Y02E10/50
摘要： The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
摘要翻译：本发明涉及一种光伏器件，该器件包括第一导电类型的第一半导体材料的第一层，与第一层相反的导电类型的第二半导体材料的第二层和第三层的第三层位于第一层和第二层之间的第三多孔半导体材料。本发明还提供了一种用于制造光伏器件的方法。

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