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1. 发明申请

US20140038086A1 Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same 有权
标题翻译：用于极紫外光刻的相移掩模及其制造方法
公开(公告)号：US20140038086A1
公开(公告)日：2014-02-06
申请号：US13564198
申请日：2012-08-01
申请人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/26 , G03F1/24
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译：公开了一种掩模及其制造方法。在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

2. 发明授权

US08877409B2 Reflective mask and method of making same 有权
标题翻译：反光罩及其制作方法
公开(公告)号：US08877409B2
公开(公告)日：2014-11-04
申请号：US13451705
申请日：2012-04-20
申请人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
发明人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , G03F1/48 , H01L21/0337
摘要： A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.
摘要翻译：描述了一种反光罩。掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。边界沟到达覆盖层，沉积在边界沟内的第二吸收层，第二吸收层接触覆盖层。在一些情况下，边界沟穿过覆盖层并部分地进入反射层。

3. 发明申请

US20130280643A1 REFLECTIVE MASK AND METHOD OF MAKING SAME 有权
标题翻译：反射掩模及其制作方法
公开(公告)号：US20130280643A1
公开(公告)日：2013-10-24
申请号：US13451705
申请日：2012-04-20
申请人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
发明人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , G03F1/48 , H01L21/0337
摘要： A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, the second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer.
摘要翻译：描述了一种反光罩。掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。边界沟到达覆盖层，第二吸收层沉积在边界沟内，第二吸收层接触封盖层。

4. 发明授权

US08765330B2 Phase shift mask for extreme ultraviolet lithography and method of fabricating same 有权
标题翻译：用于极紫外光刻的相移掩模及其制造方法
公开(公告)号：US08765330B2
公开(公告)日：2014-07-01
申请号：US13564198
申请日：2012-08-01
申请人： Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24 , G03F1/54
CPC分类号： G03F1/26 , G03F1/24
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译：公开了一种掩模及其制造方法。在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

5. 发明授权

US08962222B2 Photomask and method for forming the same 有权
标题翻译：光掩模及其形成方法
公开(公告)号：US08962222B2
公开(公告)日：2015-02-24
申请号：US13495291
申请日：2012-06-13
申请人： Hsin-Chang Lee , Pei-Cheng Hsu , Chia-Jen Chen , Anthony Yen
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Chia-Jen Chen , Anthony Yen
IPC分类号： G03F1/00 , G03F1/44 , G03F1/24 , G03F1/68 , G03F1/76
CPC分类号： G03F1/76 , G03F1/24 , G03F1/38 , G03F1/44 , G03F1/50 , G03F1/68 , G03F1/70 , G06F17/5068
摘要： A photomask having a machine-readable identifying mark and suitable for manufacturing integrated circuit devices and a method for forming the photomask and identifying mark are disclosed. An exemplary embodiment includes receiving a design layout corresponding to a pattern to be formed on a photomask blank. A specification of an identifying code is also received along with the photomask blank, which includes a substrate, a reflective layer, and an absorptive layer. A first patterning is performed using the design layout. A second patterning is performed using the specification of the identifying code.
摘要翻译：公开了一种具有机读识别标记并适于制造集成电路器件的光掩模和用于形成光掩模和识别标记的方法。示例性实施例包括接收与在光掩模坯件上形成的图案相对应的设计布局。识别码的规格也与包括基底，反射层和吸收层的光掩模坯料一起被接收。使用设计布局进行第一图案化。使用识别码的说明来执行第二图案化。

6. 发明授权

US08679707B2 Method of fabricating a lithography mask 有权
标题翻译：光刻掩模的制造方法
公开(公告)号：US08679707B2
公开(公告)日：2014-03-25
申请号：US13564334
申请日：2012-08-01
申请人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
IPC分类号： G03F1/24 , G03F1/22
CPC分类号： G03F1/22 , G03F1/80
摘要： A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
摘要翻译：公开了一种制造极紫外（EUV）掩模的方法。该方法包括提供衬底，在衬底上形成反射多层（ML），在反射ML上形成缓冲层，在缓冲层上形成吸收层，并在吸收层上形成覆盖层。蚀刻覆盖层和吸收层以形成EUV掩模。

7. 发明申请

US20130337370A1 PHOTOMASK AND METHOD FOR FORMING THE SAME 有权
标题翻译：光刻胶及其形成方法
公开(公告)号：US20130337370A1
公开(公告)日：2013-12-19
申请号：US13495291
申请日：2012-06-13
申请人： Hsin-Chang Lee , Pei-Cheng Hsu , Chia-Jen Chen , Anthony Yen
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Chia-Jen Chen , Anthony Yen
IPC分类号： G03F1/44 , G03F1/76 , G03F7/20 , G03F1/68
CPC分类号： G03F1/76 , G03F1/24 , G03F1/38 , G03F1/44 , G03F1/50 , G03F1/68 , G03F1/70 , G06F17/5068
摘要： A photomask having a machine-readable identifying mark and suitable for manufacturing integrated circuit devices and a method for forming the photomask and identifying mark are disclosed. An exemplary embodiment includes receiving a design layout corresponding to a pattern to be formed on a photomask blank. A specification of an identifying code is also received along with the photomask blank, which includes a substrate, a reflective layer, and an absorptive layer. A first patterning is performed using the design layout. A second patterning is performed using the specification of the identifying code.
摘要翻译：公开了一种具有机读识别标记并适于制造集成电路器件的光掩模和用于形成光掩模和识别标记的方法。示例性实施例包括接收与在光掩模坯件上形成的图案相对应的设计布局。识别码的规格也与包括基底，反射层和吸收层的光掩模坯料一起被接收。使用设计布局进行第一图案化。使用识别码的说明来执行第二图案化。

8. 发明申请

US20140038088A1 Method of Fabricating a Lithography Mask 有权
标题翻译：制作光刻面膜的方法
公开(公告)号：US20140038088A1
公开(公告)日：2014-02-06
申请号：US13564334
申请日：2012-08-01
申请人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/22 , G03F1/80
摘要： A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
摘要翻译：公开了一种制造极紫外（EUV）掩模的方法。该方法包括提供衬底，在衬底上形成反射多层（ML），在反射ML上形成缓冲层，在缓冲层上形成吸收层，并在吸收层上形成覆盖层。蚀刻覆盖层和吸收层以形成EUV掩模。

9. 发明申请

US20100053575A1 Thermal Control For EUV Lithography 审中-公开
标题翻译： EUV光刻热控制
公开(公告)号：US20100053575A1
公开(公告)日：2010-03-04
申请号：US12204527
申请日：2008-09-04
申请人： I-Hsiung Huang , Tsiao-Chen Wu , Hsin-Chang Lee , Anthony Yen
发明人： I-Hsiung Huang , Tsiao-Chen Wu , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03B27/52
CPC分类号： G03B27/52 , G03F7/70875
摘要： A method of patterning an integrated circuit including generating a thermal profile of a reticle is provided. The thermal profile of the reticle may illustrate heat accumulation (e.g., a temperature) in a EUV reticle due an incident EUV radiation beam. The thermal profile may be determined using the pattern density of the reticle. The reticle is irradiated with a radiation beam having an extreme ultraviolet (EUV) wavelength. A thermal control profile may be generated using the thermal profile, which may define a parameter of the lithography process such as, a temperature gradient of a thermal control chuck. The thermal control profile may be downloaded to the EUV lithography tool (e.g., scanner or stepper) for use in a process. A separate thermal control profile may be provided for different reticles.
摘要翻译：提供一种图案化集成电路的方法，包括生成掩模版的热分布图。掩模版的热分布可以说明由于入射的EUV辐射束而导致的EUV掩模版中的热积聚（例如，温度）。可以使用掩模版的图案密度来确定热分布。用具有极紫外（EUV）波长的辐射束照射掩模版。可以使用热分布来产生热控制曲线，其可以限定光刻工艺的参数，例如热控制卡盘的温度梯度。可以将热控制简档下载到EUV光刻工具（例如扫描器或步进器）以用于一个过程。可以为不同的掩模版提供单独的热控制轮廓。

10. 发明授权

US08974988B2 Mask and method for forming the same 有权
标题翻译：面具及其形成方法
公开(公告)号：US08974988B2
公开(公告)日：2015-03-10
申请号：US13451767
申请日：2012-04-20
申请人： Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
发明人： Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
IPC分类号： G03F1/48
CPC分类号： G03F1/48 , G03F1/22 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/50
摘要： A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
摘要翻译：光掩模包括低热膨胀材料（LTEM）衬底，在LTEM衬底上的图案化不透明层，以及在不透明层上的图案化覆盖层。图案化覆盖层包括用于抑制雾度生长的过渡金属材料，例如金属氧化物，金属氮化物或金属氮氧化物。覆盖层中的材料与来自光刻环境的氢化合物与原子级氢钝化层反应。钝化层在光掩模表面上具有优异的抑制光致霾缺陷生长的能力，提高生产周期时间，降低生产成本。

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