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1. 发明授权

US09214644B2 Active matrix dilute source enabled vertical organic light emitting transistor 有权
标题翻译：有源矩阵稀释源启用垂直有机发光晶体管
公开(公告)号：US09214644B2
公开(公告)日：2015-12-15
申请号：US13519176
申请日：2011-12-07
申请人： Andrew Gabriel Rinzler , Mitchell Austin McCarthy , Bo Liu
发明人： Andrew Gabriel Rinzler , Mitchell Austin McCarthy , Bo Liu
IPC分类号： H01L51/52 , H01L29/16 , H01L29/78 , H01L51/05 , H01L51/10 , H01L27/32 , B82Y99/00 , H01L51/00
CPC分类号： H01L51/5203 , B82Y99/00 , H01L27/3262 , H01L27/3274 , H01L29/1606 , H01L29/7827 , H01L51/0045 , H01L51/0048 , H01L51/057 , H01L51/102 , H01L51/5296
摘要： Various embodiments are provided for dilute source enabled vertical organic light emitting transistors. In various embodiments, a display panel includes an array of pixels. In one embodiment, among others, at least one pixel includes a switching transistor and a driving transistor coupled to the switching transistor, where the driving transistor is configured to emit light responsive to activation by the switching transistor. The driving transistor may be a dilute source enabled vertical organic light emitting transistor (DS-VOLET). The switching transistor may include a dilute source enabled vertical-field effect transistor (DS-VFET). In another embodiment, a double dilute source enabled vertical-field effect transistor (DS-VFET) includes a first DS-VFET coupled to a second DS-VFET.
摘要翻译：提供了用于稀释源的垂直有机发光晶体管的各种实施例。在各种实施例中，显示面板包括像素阵列。在一个实施例中，至少一个像素包括开关晶体管和耦合到开关晶体管的驱动晶体管，其中驱动晶体管被配置为响应于开关晶体管的激活而发光。驱动晶体管可以是具有稀释源的垂直有机发光晶体管（DS-VOLET）。开关晶体管可以包括具有稀释源的垂直场效应晶体管（DS-VFET）。在另一个实施例中，双稀释源使能的垂直场效应晶体管（DS-VFET）包括耦合到第二DS-VFET的第一DS-VFET。

2. 发明申请

US20120319096A1 SEMICONDUCTOR DEVICES INCLUDING AN ELECTRICALLY PERCOLATING SOURCE LAYER AND METHODS OF FABRICATING THE SAME 有权
标题翻译：包括电气渗透源层的半导体器件及其制造方法
公开(公告)号：US20120319096A1
公开(公告)日：2012-12-20
申请号：US13580199
申请日：2011-03-04
申请人： Andrew Gabriel Rinzler , Bo Liu , Mitchell Austin McCarthy
发明人： Andrew Gabriel Rinzler , Bo Liu , Mitchell Austin McCarthy
IPC分类号： H01L29/78 , H01L21/336 , H01L51/30 , H01L29/792 , H01L29/788
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0566 , H01L51/057 , H01L51/0591
摘要： Various embodiments are provided for semiconductor devices including an electrically percolating source layer and methods of fabricating the same. In one embodiment, a semiconductor device includes a gate layer, a dielectric layer, a memory layer, a source layer, a semiconducting channel layer, and a drain layer. The source layer is electrically percolating and perforated. The semiconducting channel layer is in contact with the source layer and the memory layer. The source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.
摘要翻译：提供了包括电渗透源层的半导体器件的各种实施例及其制造方法。在一个实施例中，半导体器件包括栅极层，电介质层，存储层，源极层，半导体沟道层和漏极层。源层是电渗透和穿孔的。半导体沟道层与源层和存储层接触。源极层和半导体沟道层形成栅极电压可调电荷注入势垒。

3. 发明申请

US20100207074A1 HIGHLY ACCESSIBLE, NANOTUBE ELECTRODES FOR LARGE SURFACE AREA CONTACT APPLICATIONS 审中-公开
标题翻译：高可接触性，用于大面积面积的纳米电极接触应用
公开(公告)号：US20100207074A1
公开(公告)日：2010-08-19
申请号：US12732438
申请日：2010-03-26
申请人： Andrew Gabriel Rinzler , John R. Reynolds , Rajib Kumar Das
发明人： Andrew Gabriel Rinzler , John R. Reynolds , Rajib Kumar Das
IPC分类号： H01B1/04 , D01F9/12
CPC分类号： H01G11/36 , B82Y10/00 , H01L51/444 , Y02E60/13 , Y10S977/75 , Y10T428/24603
摘要： An highly porous electrically conducting film that includes a plurality of carbon nanotubes, nanowires or a combination of both. The highly porous electrically conducting film exhibits an electrical resistivity of less than 0.1 Ω·cm at 25 C and a density of between 0.05 and 0.70 g/cm3. The film can exhibit a density between 0.50 and 0.85 g/cm3 and an electrical resistivity of less than 6×10−3 Ω·cm at 25 C. Also included is a method of forming these highly porous electrically conducting films by forming a composite film using carbon nanotubes or nanowires and sacrificial nanoparticles or microparticles. At least a portion of the nanoparticles or microparticles are then removed from the composite film to form the highly porous electrically conducting film.
摘要翻译：包括多个碳纳米管，纳米线或两者的组合的高度多孔的导电膜。高度多孔的导电膜在25℃下的电阻率小于0.1Ω·cm·cm，密度为0.05-0.70g / cm3。该膜可以在25℃下显示出0.50至0.85g / cm 3的密度和小于6×10-3＆OHgr·cm的电阻率。还包括通过形成复合材料形成这些高度多孔的导电膜的方法使用碳纳米管或纳米线和牺牲纳米颗粒或微粒的膜。然后从复合膜中除去至少一部分纳米颗粒或微粒，以形成高度多孔的导电膜。

4. 发明授权

US09775241B2 Nanotube dispersants and dispersant free nanotube films therefrom 有权
公开(公告)号：US09775241B2
公开(公告)日：2017-09-26
申请号：US14009922
申请日：2012-04-03
申请人： Ryan M. Walczak , John R. Reynolds , Andrew Gabriel Rinzler , Andrew M. Spring , Svetlana V. Vasilyeva , Pooja Wadhwa
发明人： Ryan M. Walczak , John R. Reynolds , Andrew Gabriel Rinzler , Andrew M. Spring , Svetlana V. Vasilyeva , Pooja Wadhwa
IPC分类号： C09D147/00 , C09D101/02 , C09D11/00 , H05K1/09 , C08J3/02 , C09D5/02 , C09D7/12 , C01B31/02 , C01B31/04 , C09D11/30 , C09D11/52 , B82Y30/00 , B82Y40/00 , B05D1/04 , B05D1/18 , B05D1/28 , B05D3/00 , C08K7/24
CPC分类号： H05K1/092 , B05D1/04 , B05D1/18 , B05D1/28 , B05D3/007 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/174 , C01B32/194 , C08J3/02 , C08J2300/10 , C08K3/041 , C08K7/24 , C09D5/027 , C09D7/70 , C09D11/30 , C09D11/52 , C09D101/02 , C09D147/00 , H05K2201/0323 , C08L1/284 , C08L101/02
摘要： A degradable polymeric nanotube (NT) dispersant comprises a multiplicity of NT associative groups that are connected to a polymer backbone by a linking group where there are cleavable groups within the polymer backbone and/or the linking groups such that on a directed change of conditions, bond breaking of the cleavable groups results in residues from the degradable polymeric NT dispersant in a manner where the associative groups are uncoupled from other associative groups, rendering the associative groups monomelic in nature. The degradable polymeric nanotube (NT) dispersant can be combined with carbon NTs to form a NT dispersion that can be deposited to form a NT film, or other structure, by air brushing, electrostatic spraying, ultrasonic spraying, ink-jet printing, roll-to-roll coating, or dip coating. The deposition can render a NT film that is of a uniform thickness or is patterned with various thicknesses. Upon deposition of the film, the degradable polymeric nanotube (NT) dispersant can be cleaved and the cleavage residues removed from the film to yield a film where contact between NTs is unencumbered by dispersants, resulting in highly conductive NT films.

5. 发明授权

US09331217B2 Electronic gate enhancement of Schottky junction solar cells 有权
标题翻译：肖特基结太阳能电池的电子门极增强
公开(公告)号：US09331217B2
公开(公告)日：2016-05-03
申请号：US13580205
申请日：2011-04-27
申请人： Andrew Gabriel Rinzler , Pooja Wadhwa , Jing Guo , Gyungseon Seol
发明人： Andrew Gabriel Rinzler , Pooja Wadhwa , Jing Guo , Gyungseon Seol
IPC分类号： H01L31/0224 , H01L31/07
CPC分类号： H01L31/022433 , H01L31/07 , Y02E10/50
摘要： Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.
摘要翻译：为肖特基结太阳能电池提供了各种系统和方法。在一个实施例中，太阳能电池包括形成在半导体层上的网格层和形成在网格层上的离子层。离子层渗透网格层并直接接触半导体层。在另一个实施例中，太阳能电池包括形成在半导体层上的第一网格层，耦合到第一网格层的第一金属化层，通过栅极电压耦合到第一金属化层的第二高表面积导电电极，以及离子层与第一网格层和第二高表面积导电电极电连通。在另一实施例中，太阳能电池包括形成在半导体层上的栅格层和与栅格层和半导体层电连通的离子层。

6. 发明授权

US08952361B2 Semiconductor devices including an electrically percolating source layer and methods of fabricating the same 有权
标题翻译：包括电渗透源层的半导体器件及其制造方法
公开(公告)号：US08952361B2
公开(公告)日：2015-02-10
申请号：US13580199
申请日：2011-03-04
申请人： Andrew Gabriel Rinzler , Bo Liu , Mitchell Austin McCarthy
发明人： Andrew Gabriel Rinzler , Bo Liu , Mitchell Austin McCarthy
IPC分类号： H01L35/24 , H01L51/05 , B82Y10/00 , H01L51/00
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0566 , H01L51/057 , H01L51/0591
摘要： Various embodiments are provided for semiconductor devices including an electrically percolating source layer and methods of fabricating the same. In one embodiment, a semiconductor device includes a gate layer, a dielectric layer, a memory layer, a source layer, a semiconducting channel layer, and a drain layer. The source layer is electrically percolating and perforated. The semiconducting channel layer is in contact with the source layer and the memory layer. The source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.
摘要翻译：提供了包括电渗透源层的半导体器件的各种实施例及其制造方法。在一个实施例中，半导体器件包括栅极层，电介质层，存储层，源极层，半导体沟道层和漏极层。源层是电渗透和穿孔的。半导体沟道层与源层和存储层接触。源极层和半导体沟道层形成栅极电压可调电荷注入势垒。

7. 发明授权

US08232561B2 Nanotube enabled, gate-voltage controlled light emitting diodes 有权
标题翻译：纳米管使能，栅极压控发光二极管
公开(公告)号：US08232561B2
公开(公告)日：2012-07-31
申请号：US12677457
申请日：2008-09-10
申请人： Andrew Gabriel Rinzler , Bo Liu , Mitchell Austin McCarthy , John Robert Reynolds , Franky So
发明人： Andrew Gabriel Rinzler , Bo Liu , Mitchell Austin McCarthy , John Robert Reynolds , Franky So
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/18 , H01L31/12 , H01L33/00 , H01L29/26
CPC分类号： H01L51/5296 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L51/0039 , H01L51/0043 , H01L51/0048 , H01L51/0558 , H01L51/057 , H01L51/102 , H01L51/5203 , Y10S977/701 , Y10S977/742 , Y10S977/762 , Y10S977/767 , Y10S977/932 , Y10S977/936 , Y10S977/937 , Y10S977/938
摘要： Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.
摘要翻译：本发明的实施例涉及作为发光晶体管的垂直场效应晶体管。发光晶体管包括用于提供栅极场的栅电极，包括用于注入电荷的稀释纳米管网络的第一电极，用于注入互补电荷的第二电极和设置在纳米管网络之间的电致发光半导体层和电子注入层。电荷注入由栅极场调制。空穴和电子结合形成光子，从而使电致发光半导体层发射可见光。在本发明的其它实施例中，采用包括具有低密度状态的导电材料的电极的垂直场效应晶体管，使得晶体管接触势垒调制包括具有低密度状态的电极之间的肖特基接触的势垒高度降低，以及相邻的半导体通过费米能级移位。

8. 发明申请

US20120115049A1 SINGLE WALL CARBON NANOTUBE BASED AIR CATHODES 审中-公开
标题翻译：单壁碳纳米管空气阴极
公开(公告)号：US20120115049A1
公开(公告)日：2012-05-10
申请号：US13265976
申请日：2010-04-22
申请人： Andrew Gabriel Rinzler , Rajib Kumar Das , John R. Reynolds , Ryan M. Walczak
发明人： Andrew Gabriel Rinzler , Rajib Kumar Das , John R. Reynolds , Ryan M. Walczak
IPC分类号： H01M4/90 , H05K3/00 , H01M4/88 , B29C39/22 , B82Y30/00
CPC分类号： H01M4/8673 , H01M4/8605 , H01M4/8657 , H01M4/8668 , H01M8/1007 , H01M8/1011 , H01M12/06 , H01M2008/1095 , Y02E60/523 , Y10T29/49124
摘要： An embodiment of the invention is an air cathode having a porous membrane with at least one hydrophobic surface that contacts a conductive catalytic film that comprises single walled carbon nanotubes (SWNTs) where the nanotubes are in intimate electrical contact. The conductive film can include fullerenes, metals, metal alloys, metal oxides, or electroactive polymers in addition to the SWNTs. In other embodiments of the invention the air cathode is a component of a metal-air battery or a fuel cell.
摘要翻译：本发明的一个实施方案是具有多孔膜的空气阴极，该多孔膜具有至少一个疏水表面，该疏水性表面与包含纳米管紧密电接触的单壁碳纳米管（SWNT）的导电催化膜相接触。除了SWNT之外，导电膜可以包括富勒烯，金属，金属合金，金属氧化物或电活性聚合物。在本发明的其它实施例中，空气阴极是金属 - 空气电池或燃料电池的组件。

9. 发明授权

US08049106B2 Method for forming interpenetrating networks of distinct materials and devices therefrom 有权
标题翻译：用于形成不同材料和装置的互穿网络的方法
公开(公告)号：US08049106B2
公开(公告)日：2011-11-01
申请号：US12093999
申请日：2006-11-21
申请人： Andrew Gabriel Rinzler
发明人： Andrew Gabriel Rinzler
IPC分类号： H01L31/00
CPC分类号： H01L51/4253 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/26 , H01L31/0352 , H01L31/06 , H01L33/18 , H01L51/0048 , H01L51/4266 , H01L51/5012 , H01L2251/5369 , Y02E10/549 , Y10T428/249981 , Y10T428/31504
摘要： An electrical or electro-optical device (100) includes a first layer (110) having a first composition. The first composition includes a plurality of electrically connected particles. A second layer (130) has a second composition, the second composition including a plurality of electrically connected particles. A composite layer (120) is disposed between the first and second layer. The composite layer is an interpenetrated network of a third and a fourth composition, wherein the third composition is different from the fourth composition. A first electrically interconnected network extends from the first composition in the first layer (110) to the third composition throughout a thickness of the composite layer (120), and a second electrically interconnected network extends from the second composition in the second layer (130) to the fourth composition throughout the thickness of the composite layer.
摘要翻译：电或电光器件（100）包括具有第一组成的第一层（110）。第一组合物包括多个电连接的颗粒。第二层（130）具有第二组合物，第二组合物包括多个电连接的颗粒。复合层（120）设置在第一层和第二层之间。复合层是第三和第四组合物的互穿网络，其中第三组合物不同于第四组合物。第一电互连网络在复合层（120）的整个厚度上从第一层（110）中的第一组合物延伸到第三组合物，并且第二电互连网络从第二层（130）中的第二组合物延伸，涉及复合层整个厚度的第四组合物。

10. 发明授权

US10115972B2 Single wall carbon nanotube based air cathodes 有权
公开(公告)号：US10115972B2
公开(公告)日：2018-10-30
申请号：US13265976
申请日：2010-04-22
申请人： Andrew Gabriel Rinzler , Rajib Kumar Das , John R. Reynolds , Ryan M. Walczak
发明人： Andrew Gabriel Rinzler , Rajib Kumar Das , John R. Reynolds , Ryan M. Walczak
IPC分类号： H01M4/86 , H01M8/1007 , H01M8/1011 , H01M12/06 , H01M8/1018
摘要： An embodiment of the invention is an air cathode having a porous membrane with at least one hydrophobic surface that contacts a conductive catalytic film that comprises single walled carbon nanotubes (SWNTs) where the nanotubes are in intimate electrical contact. The conductive film can include fullerenes, metals, metal alloys, metal oxides, or electroactive polymers in addition to the SWNTs. In other embodiments of the invention the air cathode is a component of a metal-air battery or a fuel cell.

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