专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20230070804A1 SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20230070804A1
公开(公告)日：2023-03-09
申请号：US17901487
申请日：2022-09-01
申请人： WONIK IPS CO., LTD.
发明人： Tae Dong KIM , Jung Hwan LEE , Cheong Hwan JEONG , Sung Ho ROH , Young Jun KIM , Moon Chul KUM , Chan Soo PARK , Mi Sook KIM , Yong Ki KIM
IPC分类号： C23C16/455 , C23C16/458 , C23C16/44
摘要： The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including: a process chamber (100) which has an inner space and in which an installation groove (130) is defined at a central side on a bottom surface (120); a substrate support (200) installed to be inserted into the installation groove (130) and having a top surface on which the substrate is seated; an inner lid part (300) which is installed to be movable vertically in the inner space and descends so that a portion thereof is in close contact with the bottom surface (120) adjacent to the installation groove (130) to define a sealed processing space (S2) in which the substrate support (200) is disposed therein.

2. 发明申请

US20210005501A1 SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20210005501A1
公开(公告)日：2021-01-07
申请号：US16871567
申请日：2020-05-11
申请人： WONIK IPS CO., LTD.
发明人： Dong Bum KANG , NANYI ZHAO
IPC分类号： H01L21/687 , H01L21/67 , C23C16/458 , C23C16/455 , C23C16/46 , C23C16/44 , C23F1/08
摘要： A substrate support includes a disk having a disk shape to support at least one substrate, at least one pocket groove which is formed to be concave from an upper surface of the disk in a shape corresponding to the substrate such that at least an edge portion of the substrate is seated therein, a free space forming portion which is spaced inwardly at a predetermined distance from an edge of the pocket groove and formed to be concave from at least a part of a bottom surface of the pocket groove so as to define a stepped portion that supports at least the edge portion of the substrate and forms a free space below the substrate when the substrate is seated on the stepped portion, and an exhaust passage which connects an outer circumferential surface of the disk to at least a part of the free space forming portion.

3. 发明授权

US10886141B2 Method of depositing tungsten 有权
公开(公告)号：US10886141B2
公开(公告)日：2021-01-05
申请号：US16520989
申请日：2019-07-24
申请人： WONIK IPS CO., LTD.
发明人： Won Jun Yoon
IPC分类号： H01L21/00 , H01L21/3205 , H01L21/768 , H01L21/205 , H01L21/285 , C23C16/14
摘要： Provided is a method of depositing tungsten, in which depositing a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate, a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate, a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate, a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate, a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce the concentration of an impurity in the unit deposition film, and a third purge step in which a purge gas is provided on the substrate to purge the processing gas on the substrate.

4. 发明授权

US10811294B2 Substrate transfer apparatus and control method thereof 有权
公开(公告)号：US10811294B2
公开(公告)日：2020-10-20
申请号：US15709496
申请日：2017-09-20
申请人： WONIK IPS CO., LTD.
发明人： Hyun Soo Jung , Yong Baek Jeon
IPC分类号： H01L21/67 , H01L21/677 , H01L21/673
摘要： Provided are a substrate transfer apparatus and a control method thereof. The substrate transfer apparatus includes a body having a gate through which a substrate passes; a substrate transfer robot provided inside the body and including an end effector that includes a first seating portion and a second seating portion horizontally spaced apart from each other; a sensing portion including a light emitting portion and a light receiving portion spaced apart from each other in a diagonal direction with respect to a longitudinal direction of the first and second seating portions with reference to the end effector, and detecting the position of at least one of the first seating portion and the second seating portion when the end effector moves; and a control unit for determining whether the end effector is misaligned or sagged by using a measured value measured by the sensing portion and a predetermined reference value.

5. 发明申请

US20200035507A1 METHOD OF DEPOSITING TUNGSTEN 审中-公开
公开(公告)号：US20200035507A1
公开(公告)日：2020-01-30
申请号：US16520989
申请日：2019-07-24
申请人： WONIK IPS CO., LTD.
发明人： Won Jun YOON
IPC分类号： H01L21/3205 , H01L21/285 , H01L21/205 , H01L21/768
摘要： Provided is a method of depositing tungsten, in which depositing a tungsten nucleation layer is formed by performing a unit cycle at least once, wherein the unit cycle includes an absorption step in which a first process gas is provided on a substrate such that at least a portion of the first process gas is absorbed on the substrate, a first purge step in which a purge gas is provided on the substrate to purge the first process gas which has not been absorbed on the substrate, a reaction step in which a gas containing tungsten is provided on the substrate as a second process gas to form a unit deposition film on the substrate, a second purge step in which a purge gas is provided on the substrate to purge a reaction by-product on the substrate, a processing step in which a processing gas containing a hydrogen (H) element is provided on the substrate to reduce the concentration of an impurity in the unit deposition film, and a third purge step in which a purge gas is provided on the substrate to purge the processing gas on the substrate.

6. 发明授权

US09732424B2 Gas injection apparatus and substrate processing apparatus using same 有权
公开(公告)号：US09732424B2
公开(公告)日：2017-08-15
申请号：US13393498
申请日：2010-08-24
申请人： Jung-Hwan Lee , Woo-Young Park , Tae-Ho Hahm
发明人： Jung-Hwan Lee , Woo-Young Park , Tae-Ho Hahm
IPC分类号： C23C16/455 , H01L21/687
CPC分类号： C23C16/45551 , C23C16/45565 , C23C16/45574 , H01L21/68764 , H01L21/68771
摘要： Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points.

7. 发明申请

US20130180454A1 THIN FILM DEPOSITION APPARATUS 审中-公开
标题翻译：薄膜沉积装置
公开(公告)号：US20130180454A1
公开(公告)日：2013-07-18
申请号：US13823846
申请日：2011-09-16
申请人： Sang-Joon Park , Jin-Ho Kim , Byung-Guk Son
发明人： Sang-Joon Park , Jin-Ho Kim , Byung-Guk Son
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/303 , C23C16/45508 , C23C16/45514 , H01L21/02538 , H01L21/0262
摘要： Provided is a thin film deposition apparatus which comprises a chamber, a susceptor, a source gas supply part, and a susceptor support. The chamber has an inner space in which a deposition process is performed. The susceptor is disposed within the chamber to directly support a plurality of substrates along a circumference of a center of a top surface or support a substrate holder on which at least one substrate is disposed. The source gas supply part supplies first and second source gases into a central portion of an upper side of the susceptor in a state where the first and second gases are separated from each other. Also, the source gas supply part respectively injects the first and second source gases separated from each other toward a circumference of the susceptor through vertically arranged source gas injection holes to supply the first and second source gases onto the substrates disposed on the susceptor. The susceptor support is configured to support a center of the susceptor from a lower side of the susceptor. Also, the susceptor support includes an additional gas supply part for injecting an additional gas introduced from the outside onto a top surface of the susceptor.
摘要翻译：提供一种薄膜沉积设备，其包括室，基座，源气体供应部分和基座支撑件。该腔室具有进行沉积处理的内部空间。基座设置在室内以沿着顶表面的中心的圆周直接支撑多个基板，或支撑其上设置有至少一个基板的基板保持器。源气体供给部在第一气体和第二气体彼此分离的状态下将第一源气体和第二源气体供给到基座的上侧的中央部。另外，原料气体供给部分通过垂直排列的原料气体注入孔分别将彼此分离的第一和第二源气体朝向基座的圆周喷射，以将第一和第二源气体提供到设置在基座上的基板上。基座支撑构造成从基座的下侧支撑基座的中心。此外，基座支架包括用于将从外部引入的附加气体注入到基座的顶表面上的附加气体供应部件。

8. 发明申请

US20120152172A1 GAS-DISCHARGING DEVICE AND SUBSTRATE-PROCESSING APPARATUS USING SAME 审中-公开
标题翻译：气体放电装置和基板处理装置
公开(公告)号：US20120152172A1
公开(公告)日：2012-06-21
申请号：US13393911
申请日：2010-08-24
申请人： Hui Hwang , Pil-Woong Heo , Chang-Hee Han
发明人： Hui Hwang , Pil-Woong Heo , Chang-Hee Han
IPC分类号： C23C16/455
CPC分类号： H01L21/68764 , C23C16/45551 , C23C16/45574 , H01L21/68771
摘要： Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, a partition wall is disposed between the top plate and the injection plate to divide the gas diffusion space into a plurality of separated spaces along the radius direction of the substrate support part, and the inlet is provided in plurality and the plurality of inlets are respectively provided in the separated spaces so that the process gases are independently introduced into the separated spaces.
摘要翻译：提供一种使用其的气体注入装置和基板处理装置。气体注入装置包括多个气体注入单元，其设置在可旋转地设置在腔室内以支撑多个基板的基板支撑部分上方，多个气体注入单元相对于基板的中心点沿圆周方向设置支撑部分将工艺气体注入到基底上。多个气体注入单元中的每一个包括顶板，其中设置有引入处理气体的入口和设置在顶板下方的注入板，以在注射板和顶板之间沿着半径限定气体扩散空间注入板在气体扩散空间下方具有多个气体注入孔，以将通过入口引入并在气体扩散空间中扩散的工艺气体注入到衬底上。在多个气体注入单元的至少一个气体注入单元中，在顶板和注射板之间设置分隔壁，以将气体扩散空间沿着基板支撑部的半径方向分隔成多个分离的空间，并且入口设置成多个，并且多个入口分别设置在分离的空间中，使得处理气体被独立地引入到分离的空间中。

9. 发明申请

US20230073660A1 SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20230073660A1
公开(公告)日：2023-03-09
申请号：US17901252
申请日：2022-09-01
申请人： WONIK IPS CO., LTD.
发明人： Sung Ho ROH , Jung Hwan LEE , Cheong Hwan JEONG , Tae Dong KIM , Young Jun KIM , Moon Chul KUM , Chan Soo PARK , Mi Sook KIM , Yong Ki KIM
IPC分类号： C23C16/458 , C23C16/455 , C23C16/52 , C23C16/44
摘要： The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including: a process chamber having an inner space; a substrate support on which a substrate is seated on a top surface thereof; an inner lid part which is installed to be vertically movable in the inner space and of which a portion is in close contact with the bottom surface of the process chamber to define a sealed processing space in which the substrate support is disposed; a gas supply part configured to supply a process gas to the processing space; and an inner lid driving part configured to drive the vertical movement of the inner lid part.

10. 发明申请

US20220208605A1 METHOD OF FORMING A CONTACT PLUG IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
公开(公告)号：US20220208605A1
公开(公告)日：2022-06-30
申请号：US17134101
申请日：2020-12-24
申请人： WONIK IPS CO., LTD.
发明人： Won Jun YOON , Woo Hoon SUN , Seok Kyu CHOI , Tae Sung HAN , Dong Woo KIM , Jin Wu PARK
IPC分类号： H01L21/768 , H01L21/8234
摘要： In a method of forming a contact plug in a semiconductor integrated circuit device, the contact plug may be formed in a process chamber of a substrate-processing apparatus. The process chamber may have a process space. The process chamber may include a substrate supporter placed in a lower region of the process space to support a semiconductor substrate, and a gas injector placed in an upper region of the process space to inject a gas to the semiconductor substrate. An insulating interlayer having a contact hole may be formed on the semiconductor substrate loaded into the process space. A nucleation layer may be formed on an inner surface of the contact hole and an upper surface of the insulating interlayer. A semi-bulk layer may be formed on the nucleation layer in a lower region of the contact hole. An inhibiting layer may be formed on the semi-bulk layer and the exposed nucleation layer. A main-bulk layer may be formed on the semi-bulk layer to fill the contact hole with the main-bulk layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式