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1. 发明授权

US10569291B2 Film formation method and film formation apparatus for thin film 有权
公开(公告)号：US10569291B2
公开(公告)日：2020-02-25
申请号：US15102471
申请日：2014-05-23
申请人： SHINCRON CO., LTD.
发明人： Shingo Samori , Shinichi Takase , Satoshi Sugawara , Ekishu Nagae , Yousong Jiang
IPC分类号： B05B17/04 , B05B16/60 , B05D5/08 , B05B9/04 , B05B13/02 , B05D1/02 , B05D3/04 , B05B14/20 , C03C17/30
摘要： A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials is used as the coating agent 21. The solution is ejected to the substrate in an atmosphere at a pressure set based on vapor pressures of respective materials composing the solution.

2. 发明授权

US08922790B2 Optical film thickness measuring device and thin film forming apparatus using the optical film thickness measuring device 有权
标题翻译：光学膜厚度测量装置和使用该光学膜厚度测量装置的薄膜形成装置
公开(公告)号：US08922790B2
公开(公告)日：2014-12-30
申请号：US13823527
申请日：2012-02-15
申请人： Kyokuyo Sai , Yousong Jiang , Kenji Ozawa
发明人： Kyokuyo Sai , Yousong Jiang , Kenji Ozawa
IPC分类号： G01B11/28 , G01B11/06 , C23C14/00 , C23C14/50 , C23C14/54
CPC分类号： G01B11/0691 , C23C14/0078 , C23C14/505 , C23C14/547 , G01B11/0625
摘要： An optical film thickness measuring device, enabling direct measurement of a film thickness of a product in real time accurately without a monitor substrate, includes: a projector, a light receiver, inner beam splitters disposed in a base substrate holder to reflect a measurement beam to a base substrate, an inner optical reflector that totally reflects a measurement beam from the closest inner beam splitter, external beam splitters the measurement beam from the inner beam splitters toward the light receiver, and an outer optical reflector that reflects the measurement beam from the optical reflector toward the light receiver. The measurement beam reflected by the inner beam splitters and the inner optical reflector is passed through the base substrate and then reflected by the external beam splitters and the outer optical reflector to be guided to the light receiver, so that the measurement beam is received by the light receiver.
摘要翻译：一种光学膜厚度测量装置，能够在没有监视器基板的情况下实时精确地直接测量产品的膜厚度，包括：投影仪，光接收器，设置在基板保持器中的内分束器，以将测量光束反射到基底基板，全反射来自最近内分束器的测量光束的内部光学反射器，外部光束将测量光束从内部分束器分离到光接收器，以及外部光学反射器，其将测量光束从光学反射器朝向光接收器。由内分束器和内部光学反射器反射的测量光束通过基底基板，然后被外部分束器和外部光学反射器反射，以被引导到光接收器，使得测量光束被光接收机。

3. 发明申请

US20140205762A1 METHOD FOR DEPOSITING FILM AND FILM DEPOSITION SYSTEM 审中-公开
标题翻译：沉积膜和膜沉积系统的方法
公开(公告)号：US20140205762A1
公开(公告)日：2014-07-24
申请号：US13700527
申请日：2011-09-30
申请人： SHINCRON CO., LTD.
发明人： Ichiro Shiono , Mitsuhiro Miyauchi , Yousong Jiang
IPC分类号： B05D1/00
CPC分类号： B05D1/00 , C23C14/022 , C23C14/06 , C23C14/22 , C23C14/546
摘要： A method for depositing a film includes depositing an oil repellent film having an enhanced abrasion resistance properties and which is suitable for practical use. A film deposition system, wherein a substrate holder having a substrate holding surface for holding a plurality of substrates is provided rotatably to inside a vacuum container, can include an ion source provided to inside the vacuum container to have a configuration and in an arrangement and/or a direction, by which an ion beam can be irradiated only to a partial region of the substrate holding surface. A deposition source can be provided to inside the vacuum container such that a film deposition material of an oil repellent film can be supplied to the whole region of the substrate holding surface. An operation of the ion source can be stopped before starting operation of the deposition source.
摘要翻译：一种沉积薄膜的方法包括沉积具有增强的耐磨性能并适用于实际应用的拒油膜。一种膜沉积系统，其中具有用于保持多个基板的基板保持表面的基板保持件可旋转地设置在真空容器内部，可以包括设置在真空容器内部的离子源，以具有结构和/ 或离子束仅能够照射到基板保持表面的部分区域的方向。可以在真空容器内部设置沉积源，使得可以将斥油膜的成膜材料供应到基板保持表面的整个区域。在开始沉积源的操作之前，可以停止离子源的操作。

4. 发明申请

US20110151247A1 METHOD FOR DEPOSITING FILM AND OIL-REPELLENT SUBSTRATE 有权
标题翻译：沉积薄膜和油墨基质的方法
公开(公告)号：US20110151247A1
公开(公告)日：2011-06-23
申请号：US13059145
申请日：2009-08-24
申请人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Ekishu Nagae , Yousong Jiang , Takuya Sugawara
IPC分类号： B32B5/00 , B05D3/06 , C23C14/46
CPC分类号： C23C16/56 , C03C17/42 , C03C2217/76 , C03C2217/77 , C03C2218/32 , C09D1/00 , C09D5/00 , C23C14/0652 , C23C14/08 , C23C14/12 , C23C14/22 , C23C14/221 , C23C14/24 , C23C14/541 , C23C14/5833 , Y10T428/265
摘要： The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.
摘要翻译：本发明的膜的沉积方法包括在基板101的表面上沉积具有高于基板101的硬度的硬度的第一膜103的第一膜沉积步骤，在基板101的表面上照射具有能量的颗粒的第一照射步骤第一膜103，以及在经受第一照射步骤的第一膜103的表面上沉积防油膜105的第二膜沉积步骤。根据本发明，可以提供一种用于沉积能够生产防油衬底的膜的方法，该方法包括具有实际足够水平的耐磨性的拒油膜。

5. 发明授权

US6103320A Method for forming a thin film of a metal compound by vacuum deposition 失效
标题翻译：通过真空沉积形成金属化合物的薄膜的方法
公开(公告)号：US6103320A
公开(公告)日：2000-08-15
申请号：US92644
申请日：1998-06-09
申请人： Shigeharu Matsumoto , Kazuo Kikuchi
发明人： Shigeharu Matsumoto , Kazuo Kikuchi
IPC分类号： C23C14/00 , H05H1/00 , B05D3/02 , C23C14/35
CPC分类号： C23C14/0047 , C23C14/0078
摘要： A method for forming a thin film of a metal compound is disclosed. Within a vacuum chamber, a metallic ultra-thin film of a metal or an incompletely-reacted metal is deposited on a substrate. The metallic ultra-thin film is brought in contact with the electrically neutral activated species of a reactive gas so as to convert the metallic ultra-thin film to an ultra-thin film of a metal compound through the reaction of the metallic ultra-thin film with the activated species of the reactive gas. The above-described steps are sequentially repeated so as to deposit on the substrate the ultra-thin film of the metal compound in layers until a thin film of the metal compound having a desired thickness is formed on the substrate.
摘要翻译：公开了一种形成金属化合物的薄膜的方法。在真空室内，将金属的金属超薄膜或不完全反应的金属沉积在基板上。金属超薄膜与电中性活性物质的反应性气体接触，以通过金属超薄膜的反应将金属超薄膜转变成金属化合物的超薄膜与活性气体的活化物质。依次重复上述步骤，以便在衬底上沉积金属化合物的超薄膜，直到在基片上形成具有所需厚度的金属化合物的薄膜。

6. 发明申请

US20200040440A1 REACTIVE SPUTTERING APPARATUS AND FILM FORMATION METHOD FOR COMPOSITE METAL COMPOUND FILM OR MIXTURE FILM USING THE SAME 审中-公开
公开(公告)号：US20200040440A1
公开(公告)日：2020-02-06
申请号：US16305785
申请日：2018-04-20
申请人： SHINCRON CO., LTD.
发明人： Shinichiro SAISHO
IPC分类号： C23C14/00 , C23C14/54
摘要： An apparatus is provided, comprising: a film formation chamber; a substrate holder provided in the film formation chamber and holding a substrate (S) to be formed with a film; a decompressor configured to reduce a pressure in the film formation chamber to a predetermined pressure; a discharge gas introducer configured to introduce a discharge gas into the film formation chamber; two or more sputtering electrodes each provided with a target (T1, T2) to be a film-forming material, the sputtering electrodes facing the substrate as a single substrate; a DC power source configured to supply electric power to the sputtering electrodes; two or more pulse-wave conversion switches connected between the DC power source and the sputtering electrodes, the pulse-wave conversion switches each being configured to convert a DC voltage to be applied to each of the sputtering electrodes to a pulse-wave voltage; a programmable transmitter configured to be programmable with a pulse generation control signal pattern corresponding to the electric power to be supplied to each of the sputtering electrodes, the programmable transmitter being further configured to control each of the pulse-wave conversion switches in accordance with the program; and a pulsed reactive gas introducer configured to control introduction of the reactive gas from the reactive gas introducer to the film formation chamber on the basis of the pulse generation control signal pattern from the electric power controller.

7. 发明申请

US20170100736A1 FILM FORMATION METHOD AND FILM FORMATION APPARATUS FOR THIN FILM 审中-公开
公开(公告)号：US20170100736A1
公开(公告)日：2017-04-13
申请号：US15102850
申请日：2015-04-24
申请人： SHINCRON CO., LTD.
发明人： Shingo Samori , Shinichi Takase , Satoshi Sugawara , Ekishu Nagae , Yousong Jiang
IPC分类号： B05B17/04 , B05B15/04 , B05D1/02
CPC分类号： B05B17/04 , B05B9/04 , B05B13/0221 , B05B14/20 , B05B16/60 , B05D1/02 , B05D3/0493 , B05D5/083 , B05D2203/35 , C03C17/30 , C03C2217/76 , C03C2218/15
摘要： A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials including a first material (S1) and a second material (S2) having a higher vapor pressure (P2) than a vapor pressure (P1) of the Si is used as the coating agent 21. The coating agent 21 is ejected to the substrate in an atmosphere with a pressure higher than P1 and lower than P2.

8. 发明授权

US09422620B2 Translucent hard thin film 有权
标题翻译：半透明硬薄膜
公开(公告)号：US09422620B2
公开(公告)日：2016-08-23
申请号：US13700686
申请日：2012-02-16
申请人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono
发明人： Takuya Sugawara , Hikaru Aoshima , Yousong Jiang , Ichiro Shiono
IPC分类号： C03C17/34 , C23C14/06 , C23C14/10 , C23C14/00 , C23C28/00 , C23C28/04
CPC分类号： C23C14/0635 , C03C17/3441 , C03C2217/78 , C23C14/0078 , C23C14/10 , C23C28/04 , C23C28/42 , Y10T428/24975
摘要： A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.
摘要翻译：提供透光性和膜强度高的半透明硬质薄膜。半透明硬质薄膜可以由形成在基板表面上的层叠膜构成，其中层叠膜具有通过交替堆叠多个SiO 2层和SiC层而获得的超晶格结构，并且整个膜厚度为3000nm以上。 SiC层中的每层的膜厚度为5〜30nm，SiC层的SiO 2层的膜厚为30〜60％。

9. 发明申请

US20110168544A1 Manufacturing Method of Optical Filter 审中-公开
标题翻译：光滤波器制造方法
公开(公告)号：US20110168544A1
公开(公告)日：2011-07-14
申请号：US13120764
申请日：2009-09-14
申请人： Ichiro Shiono , Toshihiko Sato , Yasuhisa Togashi , Yousong Jiang , Takuya Sugawara
发明人： Ichiro Shiono , Toshihiko Sato , Yasuhisa Togashi , Yousong Jiang , Takuya Sugawara
IPC分类号： C23C14/34 , B05D3/10 , B05D5/06
CPC分类号： C23C14/0078 , C03C17/001 , C03C2218/31 , H01J37/32082
摘要： [Object]To provide a manufacturing method of an optical filter having favorable film quality by removing a foreign substance adhered onto a surface of a substrate by cleaning before a thin film is formed.[Solution] By performing a cleaning step P1 for cleaning a substrate S by means of a solution including water, a pre-treatment step P3 for plasma-treating a surface of the substrate S cleaned in the cleaning step P1 by plasma of an oxygen gas, and a thin film formation step (P4, P5) for forming the thin film on the surface of the substrate S plasma-treated in the pre-treatment step P3, the foreign substance adhered onto the surface of the substrate can be effectively removed. In the pre-treatment step P3, only the oxygen gas is introduced to an area where the plasma is generated, and a flow rate of the oxygen gas to be introduced is greater than a flow rate of the oxygen gas introduced in the thin film formation step. Thus, the foreign substance adhered onto the surface of the substrate S through OH bonds in the cleaning step is effectively eliminated before the thin film formation step (P4, P5), so that generation of a film absent part is prevented.
摘要翻译：通过在形成薄膜之前通过清洗除去附着在基板的表面上的异物，提供具有良好的膜质量的滤光器的制造方法。 [解决方案]通过执行用于通过包括水的溶液清洁基板S的清洁步骤P1，用于等离子体处理在清洁步骤P1中清洁的基板S的表面的预处理步骤P3通过氧气等离子体以及用于在预处理步骤P3中等离子体处理的基板S的表面上形成薄膜的薄膜形成步骤（P4，P5），可以有效地去除附着在基板表面上的异物。在预处理工序P3中，仅将氧气导入到产生等离子体的区域，导入氧气的流量比导入薄膜层的氧气的流量大步。因此，在薄膜形成工序（P4，P5）之前，在清洗工序中通过OH键附着在基板S的表面上的异物被有效地消除，从而防止产生不存在膜的部件。

10. 发明申请

US20110097511A1 DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE 审中-公开
标题翻译：薄膜装置的沉积装置和制造方法
公开(公告)号：US20110097511A1
公开(公告)日：2011-04-28
申请号：US13001724
申请日：2009-06-16
申请人： Ichiro Shiono , Yousong Jiang , Ekishu Nagae , Hiromitsu Honda , Takanori Murata
发明人： Ichiro Shiono , Yousong Jiang , Ekishu Nagae , Hiromitsu Honda , Takanori Murata
IPC分类号： C23C14/48
CPC分类号： C23C14/30 , C23C14/0031 , C23C14/083 , C23C14/10 , C23C14/22 , G02B5/285
摘要： [Object] To provide a deposition apparatus 1 capable of suppressing a temporal change in film formation conditions.[Solution] In the deposition apparatus 1 including a substrate holder 12 supported in a vacuum chamber 10 grounded on the earth, a substrate 14 held by the substrate holder 12, deposition sources 34, 36 placed distant from the substrate 14 so as to face the substrate, an ion gun 38 for irradiating ions to the substrate 14, and a neutralizer 40 for irradiating electrons to the substrate 14, the vacuum chamber 10 is provided with an inner wall 30 electrically floating, and the neutralizer 40 is arranged on the inner side surface side of the vacuum chamber 10 so as to be distant from the ion gun 38.
摘要翻译：本发明提供一种能够抑制成膜条件的时间变化的沉积装置1。 [解决方案]在包括支撑在接地的真空室10中的衬底保持器12的沉积设备1中，由衬底保持器12保持的衬底14，远离衬底14放置的沉积源34,36以面对基板，用于向基板14照射离子的离子枪38和用于向基板14照射电子的中和器40，真空室10设置有电浮动的内壁30，并且中和器40布置在内侧真空室10的表面侧，以远离离子枪38。

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