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1. 发明授权

US09053833B2 DC high-voltage super-radiant free-electron based EUV source 有权
标题翻译：直流高压超辐射自由电子基EUV源
公开(公告)号：US09053833B2
公开(公告)日：2015-06-09
申请号：US13779331
申请日：2013-02-27
申请人： Tomas Plettner
发明人： Tomas Plettner
IPC分类号： H01J29/98 , G21K5/04
CPC分类号： G21K5/04 , H01S3/0903 , H05G2/00 , H05H5/04 , H05H7/04 , H05H2007/045
摘要： An array of spatially separated beamlets is produced by a corresponding array of charged particle emitters. Each emitter is at an electrostatic potential difference with respect to an immediately adjacent emitter in the array. The beamlets are converged laterally to form an charged particle beam. The beam is modulated longitudinally with infrared radiation to form a modulated beam. The charged particles in the modulated beam are bunched longitudinally to form a bunched beam. The bunched beam may be modulated with an undulator to generate a coherent radiation output. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：空间分离的子束阵列由相应的带电粒子发射体阵列产生。每个发射器相对于阵列中紧邻的发射器处于静电势差。子束横向会聚以形成带电粒子束。光束用红外辐射纵向调制以形成调制光束。调制束中的带电粒子纵向聚束以形成束状束。聚束光束可以用波动器调制以产生相干辐射输出。提供该摘要以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

2. 发明申请

US20130310966A1 METHOD AND DEVICE FOR USING SUBSTRATE GEOMETRY TO DETERMINE OPTIMUM SUBSTRATE ANALYSIS SAMPLING 有权
标题翻译：使用基板几何测定最佳基板分析采样的方法和装置
公开(公告)号：US20130310966A1
公开(公告)日：2013-11-21
申请号：US13475402
申请日：2012-05-18
申请人： Craig W. MacNaughton , Jaydeep K. Sinha
发明人： Craig W. MacNaughton , Jaydeep K. Sinha
IPC分类号： G05B11/01
CPC分类号： G03F7/70616 , G03F7/70525 , G03F7/70633 , G05B19/41875 , H01L21/67288
摘要： A method and apparatus for process control in the processing of a substrate is disclosed in the present invention. Embodiments of the present invention utilize a first analysis tool to determine changes in a substrate's geometry. The substrate geometry data is used to generate sampling plan that will be used to check areas of the substrate that are likely to have errors after processing. The sampling plan is fed forwards to a second analysis tool that samples the substrate after it has been processed. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：在本发明中公开了一种用于处理衬底中的过程控制的方法和装置。本发明的实施例利用第一分析工具来确定衬底几何形状的变化。基板几何数据用于产生采样计划，该采样计划将用于检查处理后可能出现错误的基板区域。采样计划向前馈送到第二个分析工具，对其进行处理后进行采样。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

3. 发明申请

US20110286656A1 METHODS AND SYSTEMS FOR UTILIZING DESIGN DATA IN COMBINATION WITH INSPECTION DATA 有权
标题翻译：与检验数据组合使用设计数据的方法和系统
公开(公告)号：US20110286656A1
公开(公告)日：2011-11-24
申请号：US13115957
申请日：2011-05-25
申请人： Ashok Kulkarni , Brian Duffy , Kais Maayah , Gordon Rouse
发明人： Ashok Kulkarni , Brian Duffy , Kais Maayah , Gordon Rouse
IPC分类号： G06K9/00
CPC分类号： G06F17/5045 , H01L21/67005
摘要： Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least to similar. The method further includes storing results of the binning step in a storage medium.
摘要翻译：提供了与检测数据结合使用设计数据的各种方法和系统。用于对在晶片上检测到的缺陷进行合并的计算机实现的方法包括将设计数据的部分靠近设计数据空间中的缺陷的位置进行比较。该方法还包括基于比较步骤的结果确定部分中的设计数据是否至少相似。此外，该方法包括将组中的缺陷合并，使得接近每个组中的缺陷的位置的设计数据的部分至少相似。该方法还包括将合并步骤的结果存储在存储介质中。

4. 发明申请

US20110142327A1 METHODS FOR ACCURATE IDENTIFICATION OF AN EDGE OF A CARE AREA FOR AN ARRAY AREA FORMED ON A WAFER AND METHODS FOR BINNING DEFECTS DETECTED IN AN ARRAY AREA FORMED ON A WAFER 有权
标题翻译：用于精确识别形成在水平面上的阵列区域的边缘边缘的方法以及在形成于WAFER上的阵列区域中检测出的缺陷的方法
公开(公告)号：US20110142327A1
公开(公告)日：2011-06-16
申请号：US13032577
申请日：2011-02-22
申请人： Chien-Huei (Adam) Chen , Xiaoming Wang , Eugene Shifrin , Tsung-Pao Fang
发明人： Chien-Huei (Adam) Chen , Xiaoming Wang , Eugene Shifrin , Tsung-Pao Fang
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T7/11 , G06T7/187 , G06T2207/10056 , G06T2207/30148
摘要： Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.
摘要翻译：提供了用于识别在晶片上形成的阵列区域的护理区域的边缘和/或用于合并在阵列区域中检测到的缺陷的方法。用于识别形成在晶片上的阵列区域的护理区域的边缘的一种方法包括从已知在阵列区域内的位置到已知在阵列区域外的位置确定作为位置的函数的差异图像的值阵列区域。该方法还包括识别位于最靠近阵列区域内部并且具有大于阈值的值作为护理区域的边缘的位置的位置。

5. 发明授权

US07952633B2 Apparatus for continuous clocking of TDI sensors 有权
标题翻译：用于连续计时TDI传感器的装置
公开(公告)号：US07952633B2
公开(公告)日：2011-05-31
申请号：US11292754
申请日：2005-12-01
申请人： David Lee Brown , Kai Cao , Yung-Ho Chuang
发明人： David Lee Brown , Kai Cao , Yung-Ho Chuang
IPC分类号： H04N3/14 , H04N5/335 , H01L27/148 , H01L29/66
CPC分类号： H04N5/3765 , H04N5/37206
摘要： A method and apparatus for propagating charge through a sensor and implementation thereof is provided. The method and apparatus may be used to inspect specimens, the sensor operating to advance an accumulated charge between gates of the TDI sensor. The design implementation provides a set of values representing a plurality of out of phase signals, such as sinusoidal or trapezoidal signals. These out of phase signals are converted and transmitted to the sensor. The converted signals cause the sensor to transfer charges in the sensor toward an end of the sensor. Aspects such as feed through correction and correction of nonlinearities are addressed.
摘要翻译：提供了一种通过传感器传播电荷的方法和装置及其实现。该方法和装置可用于检查样品，传感器操作以提前TDI传感器的门之间的累积电荷。设计实现提供了一组表示多个异相信号的值，例如正弦或梯形信号。这些异相信号被转换并传输到传感器。转换的信号使传感器将传感器中的电荷传送到传感器的一端。解决馈线通过校正和校正非线性等方面。

6. 发明授权

US07933016B2 Apparatus and methods for detecting overlay errors using scatterometry 有权
标题翻译：使用散射法检测重叠误差的装置和方法
公开(公告)号：US07933016B2
公开(公告)日：2011-04-26
申请号：US12641663
申请日：2009-12-18
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。提供多个目标。每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度（ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii）使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。

7. 发明申请

US20100328670A1 SYSTEM AND METHOD FOR PERFORMING PHOTOTHERMAL MEASUREMENTS AND RELAXATION COMPENSATION 失效
标题翻译：用于执行光热测量和放松补偿的系统和方法
公开(公告)号：US20100328670A1
公开(公告)日：2010-12-30
申请号：US12494734
申请日：2009-06-30
申请人： Lawrence D. Rotter , David Y. Wang , Derrick Shaughnessy , Mark Senko
发明人： Lawrence D. Rotter , David Y. Wang , Derrick Shaughnessy , Mark Senko
IPC分类号： G01N21/55
CPC分类号： G01N21/1717 , G01N2021/1731 , G01N2021/1761
摘要： A device and methods for performing a photothermal measurement and relaxation compensation of a sample are disclosed. The device may include a probe beam source, a pump beam source, a sample, and a detector array. A method may include adjusting an intensity modulated pump beam power, adjusting a probe beam power to increase a response measurement location temperature and increase a modulated optical reflectance signal, directing the intensity modulated pump beam and the probe beam along a measurement path to a response measurement location on a sample for periodically exciting a region on the sample, detecting a reflected portion of the probe beam, and calculating an implantation dose.
摘要翻译：公开了一种用于进行样品的光热测量和松弛补偿的装置和方法。该装置可以包括探针束源，泵浦束源，样本和检测器阵列。方法可以包括调整强度调制的泵浦光束功率，调整探测光束功率以增加响应测量位置温度并增加经调制的光反射信号，将强度调制的泵浦光束和探测光束沿测量路径引导到响应测量定位在样品上以周期性地激发样品上的区域，检测探测光束的反射部分，以及计算植入剂量。

8. 发明授权

US07826072B1 Method for optimizing the configuration of a scatterometry measurement system 有权
标题翻译：优化散射测量系统配置的方法
公开(公告)号：US07826072B1
公开(公告)日：2010-11-02
申请号：US11999814
申请日：2007-12-06
申请人： Daniel C. Wack , Andrei Veldman , Edward R. Ratner , John Hench , Noah Bareket
发明人： Daniel C. Wack , Andrei Veldman , Edward R. Ratner , John Hench , Noah Bareket
IPC分类号： G01B11/14 , G06F19/00
CPC分类号： G01B11/0625 , G01B11/24 , G01B2210/56
摘要： The present application discloses a method of model-based measurement of semiconductor device features using a scatterometer system. The method includes at least the following steps. A cost function is defined depending upon a plurality of variable parameters of the scatterometer system and upon a plurality of variable parameters for computer-implemented modeling to determine measurement results. Constraints are established for the plurality of variable parameters of the scatterometer system and for the plurality of variable parameters for the computer-implemented modeling. A computer-implemented optimization procedure is performed to determine an optimized global set of parameters, including both the variable parameters of the scatterometer system and the variable parameters for the computer-implemented modeling, which result in a minimal value of the cost function. Finally, the optimized global set of parameters is applied to configure the scatterometer system and the computer-implemented modeling. Other embodiments, features and aspects are also disclosed herein.
摘要翻译：本申请公开了使用散射仪系统的基于模型的半导体器件特征的测量方法。该方法至少包括以下步骤。根据散射仪系统的多个可变参数以及多个用于计算机实现的建模的可变参数来确定测量结果来定义成本函数。为散射仪系统的多个可变参数和计算机实现的建模的多个可变参数建立约束。执行计算机实现的优化过程以确定优化的全局参数集合，包括散射仪系统的可变参数和用于计算机实现的建模的可变参数，其导致成本函数的最小值。最后，应用优化的全局参数集来配置散射仪系统和计算机实现的建模。本文还公开了其它实施例，特征和方面。

9. 发明授权

US07804866B1 Pulse stretcher 有权
标题翻译：脉冲担架
公开(公告)号：US07804866B1
公开(公告)日：2010-09-28
申请号：US11862104
申请日：2007-09-26
申请人： Anatoly Shchemelinin , Ilya Bezel
发明人： Anatoly Shchemelinin , Ilya Bezel
IPC分类号： H01S3/10
CPC分类号： H01S3/0057
摘要： A pulse stretcher includes a plurality of substantially parallel slab-like optical paths of different optical path lengths and a plurality of reflecting surfaces, which are totally internally reflecting surface formed, located at an end of the corresponding optical path. Due to the different path lengths, the pulse stretcher can spread out an input pulse into a stretched pulse having a longer pulse duration and proportionally lower intensity than the initial pulse.
摘要翻译：脉冲展开器包括多个基本上平行的不同光程长度的平板状光路和位于相应光路一端的多个反射面，它们是形成的全内反射面。由于不同的路径长度，脉冲展宽器可以将输入脉冲扩展到具有比初始脉冲更长的脉冲持续时间和比例地较低的强度的拉伸脉冲。

10. 发明授权

US07804248B1 Lamp with shaped wall thickness, method of making same and optical apparatus 有权
标题翻译：具有壁厚的灯，制造方法和光学装置
公开(公告)号：US07804248B1
公开(公告)日：2010-09-28
申请号：US11695425
申请日：2007-04-02
申请人： Jim W. Li , Christopher Kirk
发明人： Jim W. Li , Christopher Kirk
IPC分类号： H01J61/30
CPC分类号： H01J61/30 , H01J61/86
摘要： A lamp, a method of making a bulb for a lamp and an optical apparatus are disclosed. The lamp may include an anode and cathode disposed within a bulb. The bulb may include an optically refractive wall that is rotationally symmetric about an axis. A thickness of the wall may decrease with increase in azimuthal angle between an equatorial plane of the bulb and a point on the bulb's surface. The apparatus may include the lamp and an ellipsoidal reflecting surface. An alternative apparatus may include an ellipsoidal reflecting surface and a lamp having an anode and cathode within a bulb. A gap between the anode and cathode may be proximate a focus of the reflecting surface. The bulb may include an optically refractive wall configured such that a 0.24/0.13 NA power ratio for bulb light coupled to the interior ellipsoidal reflecting surface is between about 3.0 and about 3.3.
摘要翻译：公开了一种灯，制造灯泡的方法和光学装置。灯可以包括设置在灯泡内的阳极和阴极。灯泡可以包括绕轴线旋转对称的光学折射壁。壁的厚度可以随着灯泡的赤道平面与灯泡表面上的点之间的方位角的增加而减小。该装置可以包括灯和椭圆反射表面。一种替代装置可以包括椭球反射表面和在灯泡内具有阳极和阴极的灯。阳极和阴极之间的间隙可以靠近反射表面的焦点。灯泡可以包括被配置为使得耦合到内椭球反射表面的灯泡光的0.24 / 0.13NA功率比在约3.0和约3.3之间的光学折射壁。

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