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1. 发明授权

US5603766A Method for producing uniaxial tetragonal thin films of ternary intermetallic compounds 失效
标题翻译：三元金属间化合物单轴四方薄膜的制备方法
公开(公告)号：US5603766A
公开(公告)日：1997-02-18
申请号：US393560
申请日：1995-02-23
申请人： Mark R. Visokay , Bruce M. Lairson , Robert Sinclair
发明人： Mark R. Visokay , Bruce M. Lairson , Robert Sinclair
IPC分类号： C23C14/02 , C23C14/18 , C30B23/02 , G11B5/64 , G11B11/105 , H01F41/18 , H01F41/30 , C30B29/10
CPC分类号： B82Y25/00 , B82Y40/00 , C23C14/025 , C23C14/18 , C30B23/002 , C30B23/02 , C30B29/52 , G11B11/10582 , G11B11/10586 , G11B5/65 , H01F10/123 , H01F41/18 , H01F41/301 , H01F10/3286
摘要： A method for making oriented thin films of a ternary intermetallic compound and such films having a tetragonal structure and generally uniaxial magnetic, optical, electronic, and mechanical properties, as well as a generally lower Curie temperature than oriented binary intermetallic films. The steps of the method involve selecting a substrate material for biasing the orientation of the ternary intermetallic compound and exhibiting no chemical reactiveness to the ternary intermetallic compound. Preferably, such substrate is a single crystal, such as MgO or Al.sub.2 O.sub.3, or an amorphous material such as pure SiO.sub.2, amorphous carbon, or glass. In a second step the substrate is heated to a temperature above 450.degree. C. and then, a first metal, a second metal, and a third metal are simultaneously deposited on the substrate material. The first metal and second metal are selected from among metals pairs including CoNi, CoFe, FeNi, and the third metal is selected from the group of metals consisting of Pd and Pt. The thin film formed is a ternary intermetallic compound exhibiting an L1.sub.0 crystal structure and the desired uniaxial properties. The method of the invention allows one to accurately control the relative amounts of the three metals.
摘要翻译：制备三元金属间化合物的取向薄膜的方法以及具有四方结构和通常单轴磁性，光学，电子和机械性能以及与定向二元金属间膜相比大致较低的居里温度的膜。该方法的步骤包括选择用于偏置三元金属间化合物的取向并且对三元金属间化合物没有化学反应性的基板材料。优选地，这种衬底是诸如MgO或Al 2 O 3的单晶，或者诸如纯SiO 2，无定形碳或玻璃的无定形材料。在第二步骤中，将衬底加热到高于450℃的温度，然后在衬底材料上同时沉积第一金属，第二金属和第三金属。第一金属和第二金属选自包括CoNi，CoFe，FeNi的金属对，第三金属选自Pd和Pt组成的金属组。所形成的薄膜是显示出L10晶体结构和期望的单轴性质的三元金属间化合物。本发明的方法可以精确地控制三种金属的相对量。

2. 发明授权

US6086774A Method of making released micromachined structures by directional etching 失效
标题翻译：通过定向蚀刻制造释放的微加工结构的方法
公开(公告)号：US6086774A
公开(公告)日：2000-07-11
申请号：US993924
申请日：1997-12-18
申请人： Francis Ho , Yoshihisa Yamamoto
发明人： Francis Ho , Yoshihisa Yamamoto
IPC分类号： B81C1/00 , C25F3/02 , G01P15/08 , G01P15/09 , G01P15/12 , G01Q70/16 , B44C1/22 , C25F3/12 , G01P15/02
CPC分类号： G01Q70/16 , B81C1/00531 , B82Y35/00 , G01P15/0802 , G01P15/0922 , G01P15/123 , B81B2201/0235 , B81B2203/0118 , B81C2201/0132 , B81C2201/0143 , G01P2015/0828
摘要： A method of making released structures by using at least two directional etching steps. Cantilevers, bridges and many other structures can be made with the present invention. In a preferred embodiment, two directional etching steps are performed at opposing angles nonnormal to the substrate surface such that the substrate is undercut and a structure is released. Alternatively, more than two directional etching steps may be performed at various angles. For example, the substrate may be rotated continuously during the directional etching process. A cantilever formed by the method of the present invention necessarily has a substantially triangular cross section. Directional etching processes that can be used include focused ion beam etching and ECR plasma etching. Some directional etching processes may require the use of a patterned etch resist layer. Other etching processes such as focused ion beam etching may use scanning techniques to select which regions are etched. A backside etch can be performed to remove remaining substrate material under the released micromachined structure. The method is particularly well suited for making released cantilevers.
摘要翻译：通过使用至少两个方向蚀刻步骤来制造释放结构的方法。悬臂，桥梁和许多其他结构可以用本发明制成。在优选实施例中，以相对于基板表面非正常的角度执行两个定向蚀刻步骤，使得基底被切削并且结构被释放。或者，可以以各种角度执行多于两个的定向蚀刻步骤。例如，可以在定向蚀刻工艺期间连续旋转衬底。通过本发明的方法形成的悬臂必须具有基本上三角形的横截面。可以使用的定向蚀刻工艺包括聚焦离子束蚀刻和ECR等离子体蚀刻。一些定向蚀刻工艺可能需要使用图案化的抗蚀剂层。诸如聚焦离子束蚀刻的其它蚀刻工艺可以使用扫描技术来选择蚀刻哪些区域。可以执行背面蚀刻以在释放的微加工结构下去除剩余的基底材料。该方法特别适用于制备释放的悬臂。

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