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81. 发明申请

US20100209736A1 PERPENDICULAR MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING AND REPRODUCING DEVICE 审中-公开
标题翻译：全磁记录介质和磁记录和再现装置
公开(公告)号：US20100209736A1
公开(公告)日：2010-08-19
申请号：US12676590
申请日：2008-09-04
申请人： Atsushi Hashimoto
发明人： Atsushi Hashimoto
IPC分类号： G11B5/33 , G11B5/66
CPC分类号： G11B5/667 , G11B5/7325 , Y10T428/1171
摘要： One object of the present invention is to provide a method for easily providing an ECC type magnetic recording medium with low cost, which is easily designed, and the present invention provides a perpendicular magnetic recording medium including at least a soft magnetic backing layer, an under layer, an intermediate layer, and a perpendicular magnetic recording layer on a non-magnetic substrate, wherein the perpendicular magnetic recording layer includes at least one of a main recording layer and an auxiliary recording layer, the main recording layer includes a layer having perpendicular magnetic anisotropy, the auxiliary recording layer is a multilayer including three or more of a soft magnetic layer and a non-magnetic layer which are layered alternately, and the outermost layer to the non-magnetic substrate is the soft magnetic layer.
摘要翻译：本发明的一个目的是提供一种易于设计的用于容易地提供ECC型磁记录介质的方法，其易于设计，并且本发明提供一种垂直磁记录介质，其至少包括软磁背衬层，层，中间层和垂直磁记录层，其中所述垂直磁记录层包括主记录层和辅助记录层中的至少一个，所述主记录层包括具有垂直磁性的层各向异性，辅助记录层是交替层叠的软磁性层和非磁性层中的3层以上的层叠体，非磁性基板的最外层是软磁性层。

82. 发明申请

US20100123965A1 Near-Field Transducers For Focusing Light 有权
标题翻译：用于聚焦光的近场传感器
公开(公告)号：US20100123965A1
公开(公告)日：2010-05-20
申请号：US12272984
申请日：2008-11-18
申请人： Lien Lee , Xuhui Jin , Kaizhong Gao , Amit Vasant Itagi , William Albert Challener
发明人： Lien Lee , Xuhui Jin , Kaizhong Gao , Amit Vasant Itagi , William Albert Challener
IPC分类号： G11B5/02
CPC分类号： G11B5/314 , G11B5/4866 , G11B5/6088 , G11B7/122 , G11B7/1384 , G11B7/1387 , G11B11/10536 , G11B2005/0005 , G11B2005/0021 , Y10T428/11 , Y10T428/1171 , Y10T428/1193
摘要： An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a dielectric component and a metallic component positioned adjacent to at least a portion of the dielectric component. An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a first metallic component, a first dielectric layer positioned adjacent to at least a portion of the first metallic component, and a second metallic component positioned adjacent to at least a portion of the first dielectric component.
摘要翻译：一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括介电部件和金属部件，该金属部件邻近至少一部分介电元件。一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括第一金属部件，第一介电层位于与至少一部分的第一金属部件和与第一介电部件的至少一部分相邻定位的第二金属部件。

83. 发明申请

US20100119874A1 Laminated high moment film for head applications 有权
标题翻译：用于头部应用的层压高力矩胶片
公开(公告)号：US20100119874A1
公开(公告)日：2010-05-13
申请号：US12291715
申请日：2008-11-13
申请人： Kunliang Zhang , Min Li , Min Zheng , Fenglin Liu , Xiaomin Liu
发明人： Kunliang Zhang , Min Li , Min Zheng , Fenglin Liu , Xiaomin Liu
IPC分类号： G11B5/33 , C23C14/34
CPC分类号： G11B5/3116 , G11B5/1278 , Y10T428/11 , Y10T428/115 , Y10T428/1171
摘要： A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.
摘要翻译：公开了一种具有非AFC配置的叠层高力矩薄膜，其可用作主磁极层的种子层或作为PMR写入器中的主极点本身。层叠膜包括多个（B / M）堆叠，其中B是取向层，M是高力矩层。相邻（B / M）堆叠被非晶层隔开，其破坏相邻高力矩层之间的磁耦合，并且在保持高磁矩并且实现Hch，Hce和Hk的低值的同时降低硬轴方向的剩磁。非晶材料层可以由Hf，Zr，Ta，Al，Mg，Zn，Ti，Cr，Nb或Si中的一种或多种的氧化物，氮化物或氮氧化物制成，或者可以是Hf，Zr，Ta， Nb，CoFeB，CoB，FeB或CoZrNb。对准层是FCC软铁磁材料或非磁性FCC材料。

84. 发明申请

US20090310472A1 METHOD AND STRUCTURE FOR ULTRA-HIGH DENSITY, HIGH DATA RATE FERROELECTRIC STORAGE DISK TECHNOLOGY USING STABILIZATION BY A SURFACE CONDUCTING LAYER 有权
标题翻译：使用表面导电层稳定的超高密度，高数据速率的电光存储盘技术的方法和结构
公开(公告)号：US20090310472A1
公开(公告)日：2009-12-17
申请号：US12546349
申请日：2009-08-24
申请人： Dennis M Newns
发明人： Dennis M Newns
IPC分类号： G11B9/00
CPC分类号： G11C11/22 , G11B9/02 , G11B9/063 , Y10T428/11 , Y10T428/1171
摘要： A method and structure for a ferroelectric storage medium, includes a metallic underlayer and a ferroelectric data layer over the metallic underlayer. A layer over the ferroelectric data layer has a charge migration rate faster than a charge migration rate of the ferroelectric data layer.
摘要翻译：铁电存储介质的方法和结构包括在金属底层上的金属底层和铁电数据层。铁电数据层上的层的电荷迁移速率比铁电数据层的电荷迁移速率快。

85. 发明申请

US20090226762A1 PERPENDICULAR MAGNETIC RECORDING MEDIUM AND SYSTEM WITH LOW-CURIE-TEMPERATURE MULTILAYER FOR HEAT-ASSISTED WRITING AND/OR READING 有权
标题翻译：具有低温度温度的多层磁性记录介质和系统，用于热辅助写入和/或读取
公开(公告)号：US20090226762A1
公开(公告)日：2009-09-10
申请号：US12041930
申请日：2008-03-04
申请人： Olav Hellwig , Bruce David Terris , Jan-Ulrich Thiele
发明人： Olav Hellwig , Bruce David Terris , Jan-Ulrich Thiele
IPC分类号： G11B5/65
CPC分类号： G11B5/66 , Y10T428/1171
摘要： A perpendicular magnetic recording medium, usable for either continuous or patterned media, has a recording layer structure (RLS) of first and second perpendicular magnetic layers (PM1, PM2) and an antiferromagnetically coupling (AFC) layer and a ferromagnetic switching layer (SWL) between PM1 and PM2. The magnetic recording system uses heat to assist in the reading and/or writing of data. The SWL is a Co/Ni multilayer with a Curie temperature (TC-SWL) less than the Curie temperatures of PM1 and PM2. At room temperature, there is ferromagnetic coupling between SWL and the upper ferromagnetic layer (PM2) so that the magnetizations of SWL and PM2 are parallel, and antiferromagnetic coupling between SWL and the lower ferromagnetic layer (PM1) across the AFC layer so that the magnetization of PM1 is aligned antiparallel to the magnetizations of SWL and PM2. When the SWL is heated to above TC-SWL it is no longer ferromagnetic, there is no antiferromagnetic coupling between the SWL and PM1 across the AFC layer, and the magnetizations of PM1 and PM2 become aligned parallel.
摘要翻译：可用于连续或图案化介质的垂直磁记录介质具有第一和第二垂直磁性层（PM1，PM2）和反铁磁耦合（AFC）层和铁磁性切换层（SWL）的记录层结构（RLS） PM1和PM2之间。磁记录系统使用热量来辅助读取和/或写入数据。 SWL是具有低于PM1和PM2的居里温度的居里温度（TC-SWL）的Co / Ni多层。在室温下，在SWL和上铁磁层（PM2）之间存在铁磁耦合，使得SWL和PM2的磁化平行，并且SWL与AFC层之间的下铁磁层（PM1）之间的反铁磁耦合，使得磁化的PM1与SWL和PM2的磁化反平行排列。当SWL被加热到高于TC-SWL时，它不再是铁磁性的，在AFC层之间的SWL和PM1之间没有反铁磁耦合，并且PM1和PM2的磁化平行排列。

86. 发明授权

US07446985B2 Epitaxial oxide cap layers for enhancing GMR performance 失效
标题翻译：用于增强GMR性能的外延氧化物盖层
公开(公告)号：US07446985B2
公开(公告)日：2008-11-04
申请号：US10741436
申请日：2003-12-19
申请人： Wen-yaung Lee , Jinshan Li , Kebin Li , Yihong Wu
发明人： Wen-yaung Lee , Jinshan Li , Kebin Li , Yihong Wu
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171 , Y10T428/1193 , Y10T428/265
摘要： A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer. Preferably, the layer of metal oxide is a crystalline structure, and is of ZnO.
摘要翻译：包含这种头部的磁头和磁存储系统，头部包括自由层和相对于自由层基本上外延形成的金属氧化物层。优选地，金属氧化物层是结晶结构，并且是ZnO。

87. 发明申请

US20080222879A1 Method of manufacturing magnetic head and method of manufacturing magnetic head substructure 有权
标题翻译：制造磁头的方法和制造磁头子结构的方法
公开(公告)号：US20080222879A1
公开(公告)日：2008-09-18
申请号：US12005272
申请日：2007-12-27
申请人： Takeo Kagami , Tetsuro Sasaki , Yuichi Watabe , Takamitsu Sakamoto
发明人： Takeo Kagami , Tetsuro Sasaki , Yuichi Watabe , Takamitsu Sakamoto
IPC分类号： G11B5/127
CPC分类号： G11B5/3166 , G11B5/1278 , G11B5/3116 , G11B5/3173 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1107 , Y10T428/1171 , Y10T428/1193
摘要： A method of manufacturing a magnetic head includes the steps of: fabricating a substructure in which pre-head portions are aligned in a plurality of rows by forming components of a plurality of magnetic heads on a single substrate; and fabricating the plurality of magnetic heads by separating the pre-head portions from one another through cutting the substructure. In the step of fabricating the substructure, the resistance of an MR film that will be formed into an MR element by undergoing lapping later is detected to determine the target position of the boundary between a track width defining portion and a wide portion of a pole layer based on the resistance detected, and the pole layer is thereby formed. In the step of fabricating the magnetic heads, the surface formed by cutting the substructure is lapped such that the MR film is lapped and the resistance thereof thereby reaches a predetermined value.
摘要翻译：制造磁头的方法包括以下步骤：通过在单个基板上形成多个磁头的部件来制造其中预磁头部分以多行排列的子结构; 以及通过切割所述子结构将所述前头部彼此分离来制造所述多个磁头。在制造子结构的步骤中，检测将通过进行研磨而形成MR元件的MR膜的电阻，以确定轨道宽度限定部分和极层的宽部分之间的边界的目标位置基于检测到的电阻，从而形成极层。在制造磁头的步骤中，通过切割子结构而形成的表面被重叠，使得MR膜被研磨并且其电阻达到预定值。

88. 发明授权

US07248448B2 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US07248448B2
公开(公告)日：2007-07-24
申请号：US10937652
申请日：2004-09-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译：公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁性层附近设置的非磁性高导电性层第一铁磁层与非磁性间隔层接触。利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

89. 发明申请

US20070154740A1 MAGNETORESISTIVE DEVICE, MAGNETORESISTIVE HEAD AND MAGNETIC RECORDING-REPRODUCING APPARATUS 有权
标题翻译：磁电装置，磁电头和磁记录重放装置
公开(公告)号：US20070154740A1
公开(公告)日：2007-07-05
申请号：US11685490
申请日：2007-03-13
申请人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译：磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括磁化钉扎层，非磁性中间层和无磁化层。磁化固定层和无磁化层中的至少一个基本上由二元或三元合金形成，由二元或三元合金表示，其由式Fe / SUB>（其中a + b + c = 100at％，a≤75at％，b <= 75at％，c <= 63at％），或者由具有体心立方晶体结构。

90. 发明授权

US07038285B2 Very high sensitivity magnetic sensor 有权
标题翻译：非常高灵敏度的磁传感器
公开(公告)号：US07038285B2
公开(公告)日：2006-05-02
申请号：US10149093
申请日：2000-12-06
申请人： Hervé Jaouen , Thomas Skotnicki , Malgorzata Jurczak
发明人： Hervé Jaouen , Thomas Skotnicki , Malgorzata Jurczak
IPC分类号： H01L29/82
CPC分类号： G10K9/13 , G01D5/242 , G01L9/0042 , Y10T428/1157 , Y10T428/1171 , Y10T428/19
摘要： A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of the capacitor includes a doped region of a semiconductor substrate. A layer of a gaseous dielectric separates the two plates. The membrane deforms due to the effect of the Lorentz force generated by a magnetic field lying in the plane of the membrane and perpendicular to the lines of current being conducted therethrough. In addition, a process for fabricating this magnetic sensor is also provided as well as a device for measuring a magnetic field using the magnetic sensor.
摘要翻译：磁传感器包括由导电材料制成的薄的可变形膜，该导电材料形成电容器的第一板，其导通电流。电容器的第二电容器板包括半导体衬底的掺杂区域。气体介质层分离两个板。由于由位于膜的平面中的磁场产生的洛伦兹力的作用并且垂直于通过其传导的电流线，膜变形。此外，还提供了用于制造该磁传感器的工艺以及使用该磁传感器来测量磁场的装置。

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