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1. 发明授权

US06338899B1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US06338899B1
公开(公告)日：2002-01-15
申请号：US09332440
申请日：1999-06-14
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B566
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译：公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层第一铁磁层与非磁性间隔层接触。利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

2. 发明申请

US20050030676A1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US20050030676A1
公开(公告)日：2005-02-10
申请号：US10937652
申请日：2004-09-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39 , G01R33/09 , G11B5/66 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译：公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层第一铁磁层与非磁性间隔层接触。利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

3. 发明申请

US20050167770A1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权
公开(公告)号：US20050167770A1
公开(公告)日：2005-08-04
申请号：US11079322
申请日：2005-03-15
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39 , G01R33/09 , G11B5/66 , H01L43/00
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

4. 发明授权

US07738220B1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US07738220B1
公开(公告)日：2010-06-15
申请号：US11779034
申请日：2007-07-17
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/66 , G11B2005/3996 , Y10T428/1121
摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.
摘要翻译：一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向，在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层磁阻使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。

5. 发明授权

US07375405B2 Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁头和使用巨磁阻效应元件的磁存储系统
公开(公告)号：US07375405B2
公开(公告)日：2008-05-20
申请号：US11079322
申请日：2005-03-15
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： H01L29/82 , H01L43/00 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译：包含自旋阀膜的磁阻效应（MR）装置，以及包含MR装置的磁头，磁头组件和磁记录/再现系统，其中自由层的磁化方向与磁化强度成一定角度当施加的磁场为零时，其中第二铁磁层的方向。钉扎磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。构成构成被钉扎磁性层的一对强磁性膜中的任一个的磁化方向被保持，并且非磁性高电导率层与第一铁磁层相邻的第一铁磁层相邻的一侧设置在与第一铁磁层接触的一侧相反的一侧具有非磁性间隔层。利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

6. 发明授权

US07248448B2 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US07248448B2
公开(公告)日：2007-07-24
申请号：US10937652
申请日：2004-09-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译：公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁性层附近设置的非磁性高导电性层第一铁磁层与非磁性间隔层接触。利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

7. 发明授权

US07008702B2 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US07008702B2
公开(公告)日：2006-03-07
申请号：US09973235
申请日：2001-10-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： A magnetoresistance effect element includes a nonmagnetic spacer layer, first and second ferromagnetic layer separated by the nonmagnetic spacer layer, and a nonmagnetic conductivity layer. The first ferromagnetic layer has a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field. The second ferromagnetic layer has first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films. The magnetization of the first ferromagnetic layer freely rotates in a magnetic field signal. The nonmagnetic conductivity layer is disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic high-conductivity layer and the nonmagnetic spacer layer. The first ferromagnetic layer has a film thickness between 0.5 nanometers and 4.5 nanometers.
摘要翻译：磁阻效应元件包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层和非磁性导电层。第一铁磁层在零施加磁场下具有相对于第二铁磁层的磁化方向成一定角度的磁化方向。第二铁磁层具有彼此反铁磁耦合的第一和第二铁磁膜和位于第一和第二铁磁膜之间并与其接触的反铁磁耦合膜。第一铁磁层的磁化在磁场信号中自由旋转。非磁性导电层设置成与第一铁磁层接触，使得第一铁磁层设置在非磁性高导电层和非磁性间隔层之间。第一铁磁层的膜厚度在0.5纳米到4.5纳米之间。

8. 发明授权

US06495275B2 Multi-layered thin-film functional device and magnetoresistance effect element 有权
标题翻译：多层薄膜功能元件和磁阻效应元件
公开(公告)号：US06495275B2
公开(公告)日：2002-12-17
申请号：US09927379
申请日：2001-08-13
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B5127
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.
摘要翻译：磁阻效应元件包括自由层，被钉扎层和介于自由层和钉扎层之间的非磁性中间层。另外，金属阻挡层设置成与第一磁性层相邻。位于金属阻挡层附近的电子反射层含有选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种。

9. 发明授权

US06303218B1 Multi-layered thin-film functional device and magnetoresistance effect element 有权
标题翻译：多层薄膜功能元件和磁阻效应元件
公开(公告)号：US06303218B1
公开(公告)日：2001-10-16
申请号：US09273496
申请日：1999-03-22
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B566
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.
摘要翻译：根据本发明的另一方面，一种具有磁阻效应膜的磁电阻效应元件，其包括作为其中的膜之一的晶体生长控制层，其特征在于，沿着覆盖所述晶体生长控制层的膜之间的边界的粗糙度小于提供沿着所述晶体生长控制层下面的膜之间的边界的粗糙度。根据本发明的另一方面，一种磁阻效应元件，包括置于所述自由层和钉扎层之间的自由层，被钉扎层和非磁性中间层，其特征在于还包括与所述第一磁体相邻设置的金属阻挡层还提供了与所述金属阻挡层相邻并且包含选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种的电子反射层。

10. 发明授权

US06088195A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06088195A
公开(公告)日：2000-07-11
申请号：US827122
申请日：1997-03-27
申请人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/16 , H01F10/18 , H01F10/187 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/3281 , H01L43/08 , G11B2005/3996 , G11B5/3916 , G11B5/3932 , G11B5/3967 , H01F10/3295
摘要： A magnetoresistance effect element is provided with a laminated film which is composed of a first ferromagnetic conductive layer, a non-magnetic conductive layer superposed on the first ferromagnetic film, and a second ferromagnetic conductive layer superposed on the non-magnetic conductor layer, and which is provided with a pair of electrodes formed on the laminated film, wherein at least one of the first and second magnetic conductive layers comprises at least a first ferromagnetic layer and a second ferromagnetic film, for example, Co alloy films whose directions of axis of easy magnetization are different from each other. Furthermore, this element is a magnetoresistance effect element provided with a spin valve film having a non-magnetic layer disposed between a first magnetic layer composed of a laminated film of such a ferromagnetic film as a Co based magnetic alloy and a soft magnetic layer, and a second magnetic layer, wherein the soft magnetic layer is composed of a soft magnetic material laminated film of a soft magnetic material film of one kind or soft magnetic material films of two or more kinds, and values of their magnetization M.sub.s (T), film thickness d(nm), and anisotropic magnetic field H.sub.k (Oe) satisfy .SIGMA.(M.sub.s .times.d.times.H.sub.k)>30(Tnm Oe).
摘要翻译：磁阻效应元件设置有由第一铁磁性导电层，叠置在第一铁磁膜上的非磁性导电层和叠加在非磁性导体层上的第二铁磁性导电层构成的层叠膜，设置有形成在层压膜上的一对电极，其中第一和第二导电层中的至少一个至少包括第一铁磁层和第二铁磁膜，例如Co合金膜的方向的轴线方向磁化彼此不同。此外，该元件是具有自旋阀膜的磁阻效应元件，该自旋阀膜具有设置在由作为Co基磁性合金的这种铁磁膜的层叠膜构成的第一磁性层和软磁性层之间的非磁性层，以及第二磁性层，其中软磁性层由一种软磁性材料膜或两种或多种软磁性材料膜的软磁性材料层压膜及其磁化强度Ms（T），膜厚度d（nm）和各向异性磁场Hk（Oe）满足SIGMA（MsxdxHk）> 30（Tnm Oe）。

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