专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20170204012A1 COMPOSITE DIELECTRIC CERAMIC MATERIAL HAVING ANTI-REDUCTION AND HIGH TEMPERATURE STABILITY CHARACTERISTICS AND METHOD FOR PREPARING SAME 审中-公开
公开(公告)号：US20170204012A1
公开(公告)日：2017-07-20
申请号：US15468876
申请日：2017-03-24
申请人： HOLY STONE ENTERPRISE CO., LTD.
发明人： Sea-Fue WANG , Jian-Hua LI , Yen-Po HUNG , Yuan-Cheng LAI
IPC分类号： C04B35/468 , C04B35/64 , C04B35/638 , H01G4/12 , C04B35/626
CPC分类号： C04B35/4682 , C04B35/468 , C04B35/495 , C04B35/62695 , C04B35/63416 , C04B35/638 , C04B35/64 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3215 , C04B2235/3232 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3255 , C04B2235/3262 , C04B2235/3418 , C04B2235/3436 , C04B2235/3454 , C04B2235/6562 , C04B2235/6588 , C04B2235/663 , C04B2235/80 , C04B2235/96 , H01B3/12 , H01G4/1227 , H01G4/1254 , H01G4/30
摘要： A composite dielectric ceramic material having anti-reduction and high temperature stability characteristics includes the main component of (1-x)(BaTiO3)-x(Ba2LiTa5O15) formulated in accordance with the relative molar ratio of up to 100 mole composite dielectric ceramics and a predetermined ratio of one or multiple oxide subcomponents corresponding to 100 moles of the main component. The oxide subcomponents of Li2TiO3, BaSiO3, (Ba0.6Ca0.4)SiO3 and SiO2 can be used as sintering aids to provide a sintering promotion effect. The oxide subcomponents of CaO, MnO, MgO can also be selected used to improve dielectric stability. More particularly, CaO has the advantages of improving the anti-reduction ability and increasing the coefficient of resistance. Therefore, with the adding of the oxide subcomponents and their interactions, the rate of change of the TCC curve of the composite dielectric ceramic material (1-x)(BaTiO3)-x(Ba2LiTa5O15) in the temperature range of −55° C.˜200° C. is significantly inhibited, and its dielectric constant (k-values) is also well improved.

82. 发明授权

US09601275B1 Dielectric ceramic composition and electronic device using the same 有权
公开(公告)号：US09601275B1
公开(公告)日：2017-03-21
申请号：US14925481
申请日：2015-10-28
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Seok-Hyun Yoon , Yun-Jung Park , Doo-Young Kim , Song-Je Jeon , Chang-Hun Kim
IPC分类号： C04B35/468 , H01G4/12
CPC分类号： H01G4/1227 , C04B35/4682 , C04B35/495 , C04B35/62685 , C04B2235/3201 , C04B2235/3215 , C04B2235/3236 , C04B2235/3239 , C04B2235/3241 , C04B2235/3255 , C04B2235/3262 , C04B2235/3268 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3418 , C04B2235/442 , C04B2235/5445 , C04B2235/6025 , C04B2235/652 , C04B2235/6582 , C04B2235/662 , H01C7/025 , H01G4/1254 , H01G4/30
摘要： A dielectric ceramic composition includes a main component comprising (1-x)BaTiO3-x(Na1-yKy)NbO3, where 0.005≦x≦0.5 and 0.3≦y≦1.0; a first subcomponent comprising an element selected from the group consisting of Mn, V, Cr, Fe, Ni, Co, Cu and Zn; and a second subcomponent comprising SiO2.

83. 发明申请

US20160379732A1 DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT 有权
标题翻译：电介质组成和电子元件
公开(公告)号：US20160379732A1
公开(公告)日：2016-12-29
申请号：US15192293
申请日：2016-06-24
申请人： TDK CORPORATION
发明人： Raitarou MASAOKA , Hiroki UCHIYAMA , Shohei FUJII , Maiko SHIROKAWA
IPC分类号： H01B3/10 , C01G35/00
CPC分类号： H01B3/10 , C01G35/006 , C01P2006/40 , C04B35/495 , C04B35/62645 , C04B35/62685 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/6565 , C04B2235/6567 , C23C14/08 , H01B3/12 , H01G4/10 , H01G4/1254 , H01G4/33
摘要： A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC2O5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.198≦x≦0.375, 0.389≦y≦0.625, and x/3≦z≦x/3+1/9.
摘要翻译：含有由式xAO-yBO-zC2O5表示的复合氧化物作为主要成分的电介质组合物，其中A表示选自Ba，Ca和Sr中的至少一种元素，B表示Mg，C表示至少一种选自Nb和Ta的元素，x，y和z满足以下条件：x + y + z =1.000,0.198≤x≤0.375,0.389≤y≤0.625，x /3≤z≤x/ 3 + 1/9。

84. 发明授权

US09324498B2 Dielectric composition, and multilayered ceramic capacitor including the same as dielectric layer 有权
标题翻译：电介质组成和包括与介电层相同的多层陶瓷电容器
公开(公告)号：US09324498B2
公开(公告)日：2016-04-26
申请号：US14139240
申请日：2013-12-23
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Ki Hyun Park , Jeong Hyun Park
IPC分类号： C04B35/00 , H01G4/12 , H01G4/30 , C04B35/495 , C04B35/626 , H01G4/008
CPC分类号： H01G4/1254 , C04B35/495 , C04B35/62685 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3239 , C04B2235/3251 , C04B2235/3281 , C04B2235/3409 , C04B2235/365 , H01G4/0085 , H01G4/1227 , H01G4/30
摘要： Disclosed herein are a dielectric composition including a compound represented by the following Chemical Formula A5-xB10O30-x (A necessarily includes Ba, and a portion of Ba is substituted by at least one selected from Sr and Ca; B necessarily includes Nb, and a portion of Nb is substituted by at least one selected from Ta and V; and x satisfies the following equation: 1
摘要翻译：本文公开了包含由以下化学式A5-xB10O30-x表示的化合物（A必须包括Ba，Ba的一部分被选自Sr和Ca中的至少一种取代的电介质组合物; B必须包含Nb， Nb的一部分被选自Ta和V中的至少一种代替; x满足以下等式：1

85. 发明申请

US20140319660A1 SOLID-STATE ELECTRONIC DEVICE 有权
标题翻译：固态电子器件
公开(公告)号：US20140319660A1
公开(公告)日：2014-10-30
申请号：US14357167
申请日：2012-10-25
申请人： Japan Science and Technology Agency
发明人： Tatsuya Shimoda , Eisuke Tokumitsu , Masatoshi Onoue , Takaaki Miyasako
IPC分类号： H01L21/02
CPC分类号： H01G4/1254 , H01G4/1263 , H01G4/306 , H01L21/02205 , H01L21/02282 , H01L21/02288 , H01L21/76817 , H01L27/016 , H01L28/40 , H01L29/84
摘要： A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.
摘要翻译：根据本发明的固态电子器件包括：氧化物层（可能含有不可避免的杂质），其通过在包含氧气的气氛中加热由作为起始材料的前体溶液获得的前体层而形成，该起始材料包括前体含有铋（Bi）和含有铌（Nb）作为溶质的前体，由铋（Bi）和铌（Nb）构成的氧化物层。其中通过在520℃至650℃的加热温度下加热形成氧化物层。

86. 发明授权

US08558324B2 Composite dielectric thin film, capacitor and field effect transistor using the same, and each fabrication method thereof 有权
公开(公告)号：US08558324B2
公开(公告)日：2013-10-15
申请号：US12387502
申请日：2009-05-04
申请人： Il-Doo Kim , Dong-Hun Kim , Ho-Gi Kim , Nam-Gyu Cho
发明人： Il-Doo Kim , Dong-Hun Kim , Ho-Gi Kim , Nam-Gyu Cho
IPC分类号： H01L29/78 , H01G4/06 , C23C14/34 , C09D1/00
CPC分类号： H01L29/4908 , B82Y10/00 , C23C14/08 , H01G4/085 , H01G4/1209 , H01G4/1218 , H01G4/1254 , H01G4/20 , H01G4/33 , H01L21/02194 , H01L21/02266 , H01L21/31604 , H01L28/40 , H01L28/55 , H01L29/7869 , H01L51/0525 , H01L51/0537
摘要： a composite dielectric thin film capable of high dielectric constant, low leakage current characteristics, and high dielectric breakdown voltage while being deposited at a room temperature, a capacitor and a field effect transistor (FET) using the same, and their fabrication methods. The composite dielectric thin film is deposited at a room temperature or less than 200° C. and comprises crystalline or amorphous insulating filler uniformly distributed within an amorphous dielectric matrix or within an amorphous and partially nanocrystalline dielectric matrix.

87. 发明申请

US20130222970A1 DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE 有权
标题翻译：电介质陶瓷组合物和电子器件
公开(公告)号：US20130222970A1
公开(公告)日：2013-08-29
申请号：US13773380
申请日：2013-02-21
申请人： TDK Corporation
发明人： Toshihiro Iguchi , Akitoshi Yoshii , Tatsuya Kojima , Satoshi Takagi
IPC分类号： C04B35/50 , H01G4/12
CPC分类号： C04B35/50 , C01G33/006 , C01G35/006 , C01P2006/40 , C04B35/495 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3239 , C04B2235/3241 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/652 , C04B2235/656 , C04B2235/6562 , C04B2235/6582 , C04B2235/6588 , C04B2235/663 , C04B2235/76 , C04B2235/9615 , H01G4/1209 , H01G4/1254 , H01G4/30
摘要： Dielectric ceramic composition comprising a compound shown by a general formula {A1-x(RE)2x/3}y-B2O5+y and has a tungsten bronze-type structure. In the formula, “A” is at least one selected from a group comprising Ba, Ca, Sr and Mg, “B” is at least one selected from Nb and Ta, “RE” is at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and said “x” and “y” satisfies 0
摘要翻译：电介质陶瓷组合物，其包含通式{A1-x（RE）2x / 3} y-B2O5 + y所示的化合物，并具有钨青铜型结构。在该式中，“A”为选自Ba，Ca，Sr和Mg的组中的至少一种，“B”为选自Nb和Ta中的至少一种，“RE”为选自Sc，Y， La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu，“x”和“y”分别满足0

88. 发明申请

US20120127629A1 DOPED ZrO2 CAPACITOR MATERIALS AND STRUCTURES 审中-公开
标题翻译： DOPED ZrO2电容材料和结构
公开(公告)号：US20120127629A1
公开(公告)日：2012-05-24
申请号：US13264745
申请日：2010-04-14
申请人： Jeffrey F. Roeder , Bryan C. Hendrix , Steven M. Bilodeau , Gregory T. Stauf , Tianniu Chen , Thomas M. Cameron , Chongying Xu
发明人： Jeffrey F. Roeder , Bryan C. Hendrix , Steven M. Bilodeau , Gregory T. Stauf , Tianniu Chen , Thomas M. Cameron , Chongying Xu
IPC分类号： H01G4/10 , B32B19/00 , B05D5/12 , B32B15/04
CPC分类号： H01G4/1209 , C04B35/49 , C04B35/491 , C04B35/6325 , C04B2235/3206 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/441 , C04B2235/449 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/20 , H01L21/02194 , H01L21/02271 , H01L21/3142 , H01L28/40 , Y10T428/12493 , Y10T428/12674 , Y10T428/12806 , Y10T428/12819 , Y10T428/1284
摘要： A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.
摘要翻译：包括早期过渡金属或金属氧化物基材以及选自Nb，Ge，Ta，La，Y，Ce，Pr，Nd，Gd，Dy中的掺杂剂，共沉积，合金化或分层次级材料的复合电介质材料，Sr，Ba，Ca和Mg，以及这些金属的氧化物，以及作为掺杂剂或合金化二次材料的氧化铝。这种复合介电材料可以通过使用合适的前体的气相沉积工艺（例如ALD）形成微电子器件，例如铁电高k电容器，栅极结构，DRAM等。

89. 发明申请

US20120100283A1 Methods of Forming Capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US20120100283A1
公开(公告)日：2012-04-26
申请号：US13339692
申请日：2011-12-29
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： B05D5/12
CPC分类号： H01G4/1272 , H01G4/1209 , H01G4/1218 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01G4/33
摘要： Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
摘要翻译：一些实施例包括形成电容器的方法。可以在第一电容器电极上形成金属氧化物混合物。金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。可以在第一电容器电极上形成第二电容器电极。一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

90. 发明申请

US20100002358A1 HIGH-STABILITY THIN-FILM CAPACITOR AND METHOD FOR MAKING THE SAME 有权
标题翻译：高稳定性薄膜电容器及其制造方法
公开(公告)号：US20100002358A1
公开(公告)日：2010-01-07
申请号：US12311529
申请日：2007-10-16
申请人： Emmanuel Defay , Julie Guillan , Serge Blonkowski
发明人： Emmanuel Defay , Julie Guillan , Serge Blonkowski
IPC分类号： H01G4/00 , B05D5/12 , G01R27/26
CPC分类号： H01G4/1218 , H01G4/1254 , H01G4/33 , H01L27/016 , H01L28/40 , H01L28/56
摘要： The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses da and dc of the amorphous and crystalline thin layers comply with the following general formulas: d a = ɛ 0  ɛ a C s   0  ( 1 1 - ( ɛ c ɛ a ) 2  γ a γ c )   and   d c = ɛ 0  ɛ c C s   0  ( 1 1 - ( ɛ a ɛ c ) 2  γ c γ a ) in which ε0 corresponds to the electric constant, εc and εa correspond to the relative permittivity of the metal oxide respectively in crystalline form and in amorphous form, Cs0 corresponds to the total surface capacitance at zero field, and γc and γa correspond to the quadratic coefficient of capacitance with respect to the electric field of the metal oxide respectively in crystalline form and in amorphous form.
摘要翻译：电容器的电介质通过分别由相同金属氧化物制成的至少两个薄层分别以结晶和非晶形式叠加并且分别呈现相反符号的电容的二次电压系数而形成。无定形和结晶薄层的各自的厚度da和dc符合以下通式：da =εεεa C s（0）（1 1 - （εcεa）2γ伽马c）其中epsilon对应于电常数，epsilon和epsilona对应于金属氧化物的结晶形式和无定形形式的相对介电常数Cs0对应于零场的总表面电容，并且gammac和γa分别对应于分别在金属氧化物中的金属氧化物的电场的二次系数形式和非晶形式。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式