会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 86. 发明申请
    • THREE-DIMENSIONAL NETWORK FOR CHEMICAL MECHANICAL POLISHING
    • 化学机械抛光三维网络
    • US20070190909A1
    • 2007-08-16
    • US11672703
    • 2007-02-08
    • Gregory P. Muldowney
    • Gregory P. Muldowney
    • B24B7/30B24B1/00
    • B24B37/24B24B37/26B24D3/32
    • The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnected unit cells (225). The interconnected unit cells (225) are reticulated for allowing fluid flow and removal of polishing debris. A plurality of polishing elements (208, 308 and 408) form the three-dimensional network of interconnected unit cells (225). The polishing elements (208, 308 and 408) have a first end connected to a first adjacent polishing element at a first junction (209, 309 and 409) and a second end connected to a second adjacent polishing element at a second junction (209, 309 and 409) and having a cross-sectional area (222, 322 and 422) that remains within 30% between the first and the second junctions (209, 309 and 409). The polishing surface (200, 300 and 400) formed from the plurality of polishing elements (208, 308 and 408) remains consistent for multiple polishing operations.
    • 抛光垫(104)可用于在抛光介质(120)的存在下抛光磁性,光学和半导体衬底(112)中的至少一种。 抛光垫(104)包括互连单元电池(225)的三维网络。 互连的单元电池(225)被网状以允许流体流动和去除抛光碎片。 多个抛光元件(208,308和408)形成互连单元电池(225)的三维网络。 抛光元件(208,308和408)具有在第一结(209,309和409)处连接到第一相邻抛光元件的第一端,以及在第二接合处连接到第二相邻抛光元件的第二端, 309和409),并且具有在第一和第二结(209,309和409)之间保持在30%内的横截面面积(222,322和422)。 由多个抛光元件(208,308和408)形成的抛光表面(200,300和400)对于多次抛光操作保持一致。
    • 88. 发明授权
    • Polishing pad of CMP equipment for polishing a semiconductor wafer
    • 用于抛光半导体晶片的CMP设备抛光垫
    • US07160181B2
    • 2007-01-09
    • US10866805
    • 2004-06-15
    • Gun-Ig Jeung
    • Gun-Ig Jeung
    • B24B1/00
    • B24B37/205B24D3/32
    • A polishing pad used for polishing the surface of a semiconductor wafer in CMP equipment, includes a support layer adhered to the top of a rotary plate of the CMP equipment, a polishing layer disposed on top of the support layer, and an adhesive layer interposed between the support layer and the polishing layer and adhesively fixing the polishing layer to the support layer. In one embodiment, the polishing support layer is a plate-shaped molded article formed of a mixture including magnetic powder and a bonding agent containing synthetic resin. In another embodiment, a protective film extends along outer peripheral side walls of the adhesive layer and the support layer.
    • 用于抛光CMP设备中的半导体晶片的表面的抛光垫包括粘附到CMP设备的旋转板的顶部的支撑层,设置在支撑层顶部的抛光层,以及介于 支撑层和抛光层,并将抛光层粘合固定在支撑层上。 在一个实施方案中,抛光支撑层是由包括磁性粉末和含有合成树脂的粘合剂的混合物形成的板状模塑制品。 在另一个实施例中,保护膜沿粘合剂层和支撑层的外周侧壁延伸。