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81. 发明申请

US20060118823A1 Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies 有权
标题翻译：在毫米波频率下具有多瓦输出功率的场效应晶体管（FET）
公开(公告)号：US20060118823A1
公开(公告)日：2006-06-08
申请号：US11005423
申请日：2004-12-06
申请人： Primit Parikh , Yifeng Wu , Adam Saxler
发明人： Primit Parikh , Yifeng Wu , Adam Saxler
IPC分类号： H01L31/072
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/2003 , H01L29/41725
摘要： High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. The total width of the HEMT is less than about 6.0 mm.
摘要翻译：提供高电子迁移率晶体管（HEMT），其在至少30GHz的频率下工作时具有大于3.0瓦特的输出功率。 HEMT具有至少约20％的功率附加效率（PAE）和/或至少约7.5dB的增益。 HEMT的总宽度小于约6.0mm。

82. 发明申请

US20050051800A1 Cascode amplifier structures including wide bandgap field effect transistor with field plates 有权
标题翻译：串行放大器结构，包括具有场板的宽带隙场效应晶体管
公开(公告)号：US20050051800A1
公开(公告)日：2005-03-10
申请号：US10856098
申请日：2004-05-28
申请人： Umesh Mishra , Primit Parikh , Yifeng Wu
发明人： Umesh Mishra , Primit Parikh , Yifeng Wu
IPC分类号： H01L27/06 , H01L29/06 , H01L29/20 , H01L29/24 , H01L29/40 , H01L29/423 , H01L29/778 , H01L29/812 , H01L27/10
CPC分类号： H01L29/402 , H01L27/0605 , H01L29/1608 , H01L29/2003 , H01L29/42316 , H01L29/7787 , H01L29/812
摘要： A multi-stage amplifier circuit arranged to take advantage of the desirable characteristics of non-field-plate and field plate transistors when amplifying a signal. One embodiment of a multi-stage amplifier according to the present invention comprises a non-field-plate transistor and a field-plate transistor. The field-plate transistor has at least one field plate arranged to reduce the electric field strength within the field plate transistor during operation. The non-field plate transistor is connected to the field plate transistor, with the non-field-plate providing current gain and the field plate transistor providing voltage gain. In one embodiment the non-field-plate and field plate transistors are coupled together in a cascode arrangement.
摘要翻译：多级放大器电路被布置成在放大信号时利用非场板和场板晶体管的期望特性。根据本发明的多级放大器的一个实施例包括非场板晶体管和场板晶体管。场板晶体管具有至少一个场板，其布置成在操作期间降低场板晶体管内的电场强度。非场板晶体管连接到场板晶体管，非场板提供电流增益，场板晶体管提供电压增益。在一个实施例中，非场板和场板晶体管以共源共栅布置耦合在一起。

83. 发明授权

US09096939B2 Electrolysis transistor 有权
标题翻译：电解晶体管
公开(公告)号：US09096939B2
公开(公告)日：2015-08-04
申请号：US12156178
申请日：2008-05-29
申请人： Umesh Mishra , Rakesh Lai , Likun Shen , Lee McCarthy , Primit Parikh
发明人： Umesh Mishra , Rakesh Lai , Likun Shen , Lee McCarthy , Primit Parikh
IPC分类号： C25B9/00 , C25B9/04 , C02F1/461 , C25B1/02 , C25B11/00 , C25B15/00 , C25B11/04 , C25B1/00 , C25B1/04 , C25B1/06
CPC分类号： C25B1/02 , C25B1/003 , C25B1/04 , C25B1/06 , C25B9/04 , C25B11/00 , C25B11/0447 , C25B15/00 , Y02E60/366 , Y02P20/135
摘要： An electrolysis transistor for providing high-density electrochemistry and products utilizing the same, and high-efficiency electrolysis and electrochemical processes is disclosed. The electrolysis transistor may comprise an electrolyte, one or more working electrodes for transferring charge to or from said electrolyte, and one or more gate structures for altering electrode over-voltage and modifying the barrier at the electrode-electrolyte interface, reducing the voltage necessary for electrolysis. An electrochemical or photo-electrochemical cell may incorporate one or more of these electrolysis transistors.
摘要翻译：公开了一种用于提供高密度电化学的电解晶体管和利用其的产品，以及高效电解和电化学方法。电解晶体管可以包括电解质，用于将电荷转移到所述电解质或从所述电解质转移电荷的一个或多个工作电极，以及用于改变电极过电压并改变电极 - 电解质界面处的阻挡层的一个或多个栅极结构，电解。电化学或光电化学电池可并入这些电解晶体管中的一种或多种。

84. 发明授权

US07476956B2 Gallium nitride based diodes with low forward voltage and low reverse current operation 有权
标题翻译：具有低正向电压和低反向电流操作的氮化镓基二极管
公开(公告)号：US07476956B2
公开(公告)日：2009-01-13
申请号：US10445130
申请日：2003-05-20
申请人： Primit Parikh , Umesh Mishra
发明人： Primit Parikh , Umesh Mishra
IPC分类号： H01L27/095 , H01L29/812 , H01L31/108
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/872 , H01L29/88
摘要： New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential) of is not pinned. The barrier potential at the metal-to-semiconductor junction varies depending on the type of metal used and using particular metals lowers the diode's Schottky barrier potential and results in a Vf in the range of 0.1-0.3V. In another embodiment a trench structure is formed on the Schottky diodes semiconductor material to reduce reverse leakage current. and comprises a number of parallel, equally spaced trenches with mesa regions between adjacent trenches. A third embodiment of the invention provides a GaN tunnel diode with a low Vf resulting from the tunneling of electrons through the barrier potential, instead of over it. This embodiment can also have a trench structure to reduce reverse leakage current.
摘要翻译：公开了具有低导通状态电压（Vf）和保持反向电流（Irev）相对较低的结构的新的基于III族的二极管。本发明的一个实施例是由GaN材料系统制成的肖特基势垒二极管，其中费米能级（或表面电位）不被固定。金属对半导体结的势垒电位根据所使用的金属类型而变化，并且使用特定的金属降低二极管的肖特基势垒电位，并导致Vf在0.1-0.3V的范围内。在另一个实施例中，在肖特基二极管半导体材料上形成沟槽结构以减少反向漏电流。并且包括多个平行的等间距的沟槽，其间具有相邻沟槽之间的台面区域。本发明的第三实施例提供了一种具有低Vf的GaN隧道二极管，其由电子穿过势垒电位而不是在其上引起。该实施例还可以具有沟槽结构以减少反向漏电流。

85. 发明授权

US07329905B2 Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices 有权
标题翻译：用于封装发光器件和芯片级封装发光器件的芯片级方法
公开(公告)号：US07329905B2
公开(公告)日：2008-02-12
申请号：US11171893
申请日：2005-06-30
申请人： James Ibbetson , Bernd Keller , Primit Parikh
发明人： James Ibbetson , Bernd Keller , Primit Parikh
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00
CPC分类号： H01L33/486 , H01L23/481 , H01L24/48 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/051 , H01L2224/05568 , H01L2224/056 , H01L2224/16 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A packaged light emitting device includes a carrier substrate having a top surface and a bottom surface, first and second conductive vias extending from the top surface of the substrate to the bottom surface of the substrate, and a bond pad on the top surface of the substrate in electrical contact with the first conductive via. A diode having first and second electrodes is mounted on the bond pad with the first electrode is in electrical contact with the bond pad. A passivation layer is formed on the diode, exposing the second electrode of the diode. A conductive trace is formed on the top surface of the carrier substrate in electrical contact with the second conductive via and the second electrode. The conductive trace is on and extends across the passivation layer to contact the second electrode.Methods of packaging light emitting devices include providing an epiwafer including a growth substrate and an epitaxial structure on the growth substrate, bonding a carrier substrate to the epitaxial structure of the epiwafer, forming a plurality of conductive vias through the carrier substrate, defining a plurality of isolated diodes in the epitaxial structure, and electrically connecting at least one conductive via to respective ones of the plurality of isolated diodes.
摘要翻译：封装的发光器件包括具有顶表面和底表面的载体衬底，从衬底的顶表面延伸到衬底的底表面的第一和第二导电通孔以及衬底的顶表面上的接合焊盘与第一导电通孔电接触。具有第一和第二电极的二极管安装在接合焊盘上，第一电极与接合焊盘电接触。在二极管上形成钝化层，使二极管的第二电极露出。导电迹线形成在载体基板的顶表面上，与第二导电通孔和第二电极电接触。导电迹线在钝化层上并且延伸穿过第二电极。封装发光器件的方法包括在生长衬底上提供包括生长衬底和外延结构的外延膜，将载体衬底结合到外延膜的外延结构，形成通过载体衬底的多个导电通孔，限定多个隔离二极管，并且将至少一个导电通孔电连接到多个隔离二极管中的相应二极管。

86. 发明授权

US08878245B2 Transistors and method for making ohmic contact to transistors 有权
标题翻译：用于与晶体管欧姆接触的晶体管和方法
公开(公告)号：US08878245B2
公开(公告)日：2014-11-04
申请号：US11904064
申请日：2007-09-25
申请人： Primit Parikh , Sten Heikman
发明人： Primit Parikh , Sten Heikman
IPC分类号： H01L29/66 , H01L29/45 , H01L29/778 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/452 , H01L29/66462
摘要： A transistor device having non-alloyed ohmic contacts formed by a process that improves the contact morphology and reduces metal spiking into the semiconductor layers. During fabrication, a regrowth mask is deposited on the semiconductor device. A portion of the regrowth mask and the epitaxial semiconductor layers is removed, defining areas for selective regrowth of a highly-doped semiconductor material. The remaining portion of the regrowth mask forms a regrowth mask residual layer. After regrowth, ohmic contacts are formed on the regrowth structures without the use of a high-temperature annealing process. The regrowth mask residual layer does not need to be removed, but rather remains on the device throughout fabrication and can function as a passivation layer and/or a spacer layer.
摘要翻译：具有非合金欧姆接触的晶体管器件，其通过改善接触形态并减少金属掺入半导体层的工艺形成。在制造期间，再生长掩模沉积在半导体器件上。去除再生长掩模和外延半导体层的一部分，限定用于高掺杂半导体材料的选择性再生长的区域。再生长掩模的剩余部分形成再生长掩模残留层。在再生后，在再生长结构上形成欧姆接触，而不使用高温退火工艺。再生长掩模残留层不需要去除，而是整个制造中保留在器件上，并且可以用作钝化层和/或间隔层。

87. 发明授权

US07834367B2 Low voltage diode with reduced parasitic resistance and method for fabricating 有权
标题翻译：降低寄生电阻的低压二极管和制造方法
公开(公告)号：US07834367B2
公开(公告)日：2010-11-16
申请号：US11655696
申请日：2007-01-19
申请人： Primit Parikh , Sten Heikman
发明人： Primit Parikh , Sten Heikman
IPC分类号： H01L33/00
CPC分类号： H01L29/66143 , H01L29/2003 , H01L29/475 , H01L29/66212 , H01L29/872
摘要： A method of making a diode begins by depositing an AlxGa1−xN nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer, an n− GaN layer, an AlxGa1−xN barrier layer, and an SiO2 dielectric layer. A portion of the dielectric layer is removed and a Schottky metal deposited in the void. The dielectric layer is affixed to the support layer with a metal bonding layer using an Au-Sn utectic wafer bonding process, the substrate is removed using reactive ion etching to expose the n+ layer, selected portions of the n+, n−, and barrier layers are removed to form a mesa diode structure on the dielectric layer over the Schottky metal,; and an ohmic contact is deposited on the n+ layer.
摘要翻译：制造二极管的方法开始于在SiC衬底上沉积Al x Ga 1-x N成核层，然后沉积n + GaN缓冲层，n-GaN层，Al x Ga 1-x N势垒层和SiO 2电介质层。去除介电层的一部分并沉积在空隙中的肖特基金属。使用Au-Sn结晶晶片接合工艺用金属接合层将电介质层固定到支撑层上，使用反应离子蚀刻去除衬底以露出n +层，n +，n-和阻挡层的选定部分被去除以在肖特基金属上的电介质层上形成台面二极管结构; 并且在n +层上沉积欧姆接触。

88. 发明申请

US20090267078A1 Enhancement Mode III-N HEMTs 有权
标题翻译：增强模式III-N HEMTs
公开(公告)号：US20090267078A1
公开(公告)日：2009-10-29
申请号：US12108449
申请日：2008-04-23
申请人： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
发明人： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
摘要： A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
摘要翻译：一种III-N半导体器件，其包括衬底和包括部分在栅极区域下方的区域的氮化物沟道层，以及在栅极下方的部分的相对侧上的两个沟道存取区域。通道接入区域可以在与栅极下方的区域不同的层中。该器件包括与沟道层相邻的AlXN层，其中X是镓，铟或它们的组合，以及在与沟道接入区相邻的区域中与AlXN层相邻的优选n掺杂GaN层。选择AlXN层中的Al的浓度，n掺杂GaN层中的AlXN层厚度和n掺杂浓度，以在沟道接入区域中引起2DEG电荷，而不在栅极下方引起任何实质的2DEG电荷，使得在没有施加到栅极的开关电压的情况下，通道不导通。

89. 发明申请

US20090134041A1 Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines 审中-公开
标题翻译：提供氢气注入的紧凑型电器，以提高内燃机的性能
公开(公告)号：US20090134041A1
公开(公告)日：2009-05-28
申请号：US12288098
申请日：2008-10-15
申请人： Umesh Mishra , Rakesh Lal , Lee McCarthy , Primit Parikh
发明人： Umesh Mishra , Rakesh Lal , Lee McCarthy , Primit Parikh
IPC分类号： C25B1/04
CPC分类号： C25B1/04 , C25B15/02 , F02M25/12 , Y02E60/366 , Y02T10/121
摘要： Devices, systems and methods for improved electrical appliances which allow for efficient and safe production of hydrogen and oxygen gas for internal combustion engines and the like are disclosed. An appliance for providing gas for combustion may comprise a water inlet, a power source, and an electrolyzer with at least one electrolysis transistor generating hydrogen and oxygen. The appliance may also comprise a gas handling unit for collecting the output of the electrolyzer and transporting it to an engine.
摘要翻译：公开了用于改进的电器的装置，系统和方法，其允许有效和安全地生产用于内燃机等的氢气和氧气。用于提供用于燃烧的气体的装置可以包括进水口，电源和具有产生氢气和氧气的至少一个电解晶体管的电解器。设备还可以包括用于收集电解器的输出并将其运送到发动机的气体处理单元。

90. 发明申请

US20080296173A1 Electrolysis transistor 有权
标题翻译：电解晶体管
公开(公告)号：US20080296173A1
公开(公告)日：2008-12-04
申请号：US12156178
申请日：2008-05-29
申请人： Umesh Mishra , Rakesh Lai , Likun Shen , Lee McCarthy , Primit Parikh
发明人： Umesh Mishra , Rakesh Lai , Likun Shen , Lee McCarthy , Primit Parikh
IPC分类号： C25B9/00 , C02F1/461
CPC分类号： C25B1/02 , C25B1/003 , C25B1/04 , C25B1/06 , C25B9/04 , C25B11/00 , C25B11/0447 , C25B15/00 , Y02E60/366 , Y02P20/135
摘要： An electrolysis transistor for providing high-density electrochemistry and products utilizing the same, and high-efficiency electrolysis and electrochemical processes is disclosed. The electrolysis transistor may comprise an electrolyte, one or more working electrodes for transferring charge to or from said electrolyte, and one or more gate structures for altering electrode over-voltage and modifying the barrier at the electrode-electrolyte interface, reducing the voltage necessary for electrolysis. An electrochemical or photo-electrochemical cell may incorporate one or more of these electrolysis transistors.
摘要翻译：公开了一种用于提供高密度电化学的电解晶体管和利用其的产品，以及高效电解和电化学方法。电解晶体管可以包括电解质，用于将电荷转移到所述电解质或从所述电解质转移电荷的一个或多个工作电极，以及用于改变电极过电压并改变电极 - 电解质界面处的阻挡层的一个或多个栅极结构，电解。电化学或光电化学电池可并入这些电解晶体管中的一种或多种。

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