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81. 发明授权

US07792084B2 MIMO antenna apparatus controlling number of streams and modulation and demodulation method 有权
标题翻译： MIMO天线设备控制流数和调制解调方法
公开(公告)号：US07792084B2
公开(公告)日：2010-09-07
申请号：US11892886
申请日：2007-08-28
申请人： Atsushi Yamamoto , Hiroshi Iwai , Akira Kato , Satoru Amari
发明人： Atsushi Yamamoto , Hiroshi Iwai , Akira Kato , Satoru Amari
IPC分类号： H04W4/00
CPC分类号： H04B7/0413 , H04B17/309 , H04B17/382 , H04L1/0002 , H04L1/0015 , H04L1/0625
摘要： A MIMO antenna apparatus receives a plurality of radio signals modulated and transmitted by a sender-side radio station apparatus using a MIMO (Multi-Input Multi-Output) communication method with a number of data streams and a modulation and demodulation method. The MIMO antenna apparatus includes a plurality of antenna elements, detection means, MIMO demodulation means, radio transmission means, and control means. The control means controls the sender-side radio station apparatus by making the radio transmission means transmit the control signal, and controlling the MIMO demodulation means, so as to change, based on the received signal levels and the signal quality, at least one of the number of data streams and the modulation and demodulation method for the MIMO communication method used by the sender-side radio station apparatus and the MIMO demodulation means.
摘要翻译： MIMO天线装置使用具有多个数据流的MIMO（多输入多输出）通信方式和调制解调方式，接收由发送侧无线站装置调制和发送的多个无线信号。 MIMO天线设备包括多个天线元件，检测装置，MIMO解调装置，无线电传输装置和控制装置。控制装置通过使无线电发送装置发送控制信号并控制MIMO解调装置来控制发送方侧无线电台装置，以便基于所接收的信号电平和信号质量改变至少一个数据流的数量以及由发送方侧无线电台装置和MIMO解调装置使用的MIMO通信方式的调制解调方法。

82. 发明授权

US07589687B2 Antenna apparatus provided with antenna element excited through multiple feeding points 有权
标题翻译：天线设备具有通过多个馈电点激励的天线元件
公开(公告)号：US07589687B2
公开(公告)日：2009-09-15
申请号：US11951141
申请日：2007-12-05
申请人： Hiroshi Iwai , Atsushi Yamamoto , Tsutomu Sakata , Yoshio Koyanagi
发明人： Hiroshi Iwai , Atsushi Yamamoto , Tsutomu Sakata , Yoshio Koyanagi
IPC分类号： H01Q13/10
CPC分类号： H01Q1/243 , H01Q3/2605 , H01Q3/28 , H01Q3/36 , H01Q9/04
摘要： An antenna apparatus includes an antenna element having at least one slit, a first feeding point provided at a position on the antenna element, and a second feeding point provided along the slit. The antenna element is excited as an electric current antenna through the first feeding point, and at the same time, the slit is excited as a magnetic current antenna through the second feeding point.
摘要翻译：天线装置包括具有至少一个狭缝的天线元件，设置在天线元件上的位置的第一馈电点和沿着狭缝设置的第二馈电点。天线元件通过第一馈电点被激励为电流天线，并且同时，通过第二馈电点将狭缝激励为磁流天线。

83. 发明申请

US20090147834A1 RADIO COMMUNICATION APPARATUS 有权
标题翻译：无线电通信设备
公开(公告)号：US20090147834A1
公开(公告)日：2009-06-11
申请号：US11917792
申请日：2006-06-30
申请人： Takaaki Kishigami , Hiroshi Iwai
发明人： Takaaki Kishigami , Hiroshi Iwai
IPC分类号： H04B1/707 , H04B1/06 , H04M1/00
CPC分类号： H04B1/18 , H04B1/0458 , H04B2201/70701
摘要： An object of the invention is to stabilize the convergence operation at the automatic impedance matching time and ensure the reception quality in the convergence process in a fading environment in a radio communication apparatus which performs automatic impedance matching between an antenna and a Radio frequency section to decrease the impedance matching loss, for example, when the apparatus is brought close to a human body. A radio communication apparatus of the invention includes a Radio frequency section 3 which converts a received signal into a baseband signal, a variable impedance unit 2 which adjusts impedance between an antenna 1 and the Radio frequency section 3, a pilot signal extraction unit 4 which extracts a pilot signal from the baseband signal, a first channel compensation unit 5 which performs channel compensation using an output of the pilot signal extraction unit, an impedance control adequacy detection unit 7 which detects impedance control adequacy using an output of the first channel compensation unit, an impedance control unit 8 which controls the variable impedance unit 2 using an output of the impedance control adequacy detection unit, a second channel compensation unit 6 which performs channel compensation using the pilot signal, and a demodulation section 9 which performs the demodulation operation using an output of the second channel compensation unit.
摘要翻译：本发明的一个目的是在自动阻抗匹配时间稳定收敛操作，并且确保在天线和射频部分之间进行自动阻抗匹配的无线电通信装置的衰落环境中的收敛过程中的接收质量降低阻抗匹配损失，例如当该装置靠近人体时。本发明的无线通信装置具有将接收信号转换为基带信号的射频部3，调整天线1与射频部3之间的阻抗的可变阻抗部2，提取出导频信号提取部4 来自基带信号的导频信号，使用导频信号提取单元的输出进行信道补偿的第一信道补偿单元5，使用第一信道补偿单元的输出来检测阻抗控制充分性的阻抗控制适合度检测单元7，阻抗控制单元8，其使用阻抗控制充分性检测单元的输出来控制可变阻抗单元2;第二信道补偿单元6，其使用导频信号进行信道补偿;以及解调单元9，其使用输出第二通道补偿单元。

84. 发明授权

US07457650B2 Portable radio communication apparatus provided with boom portion with through hole 有权
标题翻译：便携式无线电通信装置具有带有通孔的吊杆部分
公开(公告)号：US07457650B2
公开(公告)日：2008-11-25
申请号：US10629634
申请日：2003-07-30
申请人： Hiroshi Iwai , Shinji Kamaeguchi , Kenichi Yamada , Toshihiro Asahina , Atsushi Yamamoto
发明人： Hiroshi Iwai , Shinji Kamaeguchi , Kenichi Yamada , Toshihiro Asahina , Atsushi Yamamoto
IPC分类号： H04B1/38
CPC分类号： H01Q1/242 , H01Q1/273 , H01Q9/42 , H04M1/05
摘要： A portable radio communication apparatus is provided with a boom portion having both ends connected with a housing of the portable radio communication apparatus and having a central portion located between both ends. In the portable radio communication apparatus, at least one through hole is formed between the boom portion and the housing. The boom portion includes a central portion and two end portions. The central portion extends in parallel to a width direction of the portable radio communication apparatus, and the two end portions are bent respectively from both ends of the central portion.
摘要翻译：便携式无线电通信装置设置有臂部，其两端与便携式无线电通信装置的壳体连接并且具有位于两端之间的中心部分。在便携式无线电通信装置中，在悬臂部分和壳体之间形成至少一个通孔。悬臂部分包括中心部分和两个端部部分。中心部分平行于便携式无线电通信装置的宽度方向延伸，并且两个端部分别从中心部分的两端弯曲。

85. 发明授权

US07245950B2 Portable radio communication apparatus provided with a boom portion and a part of housing operating as an antenna 有权
公开(公告)号：US07245950B2
公开(公告)日：2007-07-17
申请号：US10771449
申请日：2004-02-05
申请人： Hiroshi Iwai , Atsushi Yamamoto , Kenichi Yamada
发明人： Hiroshi Iwai , Atsushi Yamamoto , Kenichi Yamada
IPC分类号： H04M1/00
CPC分类号： H01Q5/00 , H01Q1/24 , H01Q1/27 , H01Q1/38 , H01Q3/44 , H01Q5/364 , H01Q5/40
摘要： In a portable radio communication apparatus including a housing, at least one part of the housing is formed as a housing electrical conductor portion by an electrically conductive material. The housing electrical conductor portion is connected with a radio communication circuit of the portable radio communication apparatus so as to operate as at least one part of an unbalanced type antenna of the radio communication circuit. Further, the portable radio communication apparatus further includes a boom portion coupled with the housing at least at two positions so as to provide at least one penetrating hole between the housing and the boom portion.

86. 发明申请

US20070093047A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070093047A1
公开(公告)日：2007-04-26
申请号：US11582556
申请日：2006-10-18
申请人： Yasutoshi Okuno , Michikazu Matsumoto , Masafumi Kubota , Seiji Ueda , Hiroshi Iwai , Kazuo Tsutsui , Kuniyuki Kakushima
发明人： Yasutoshi Okuno , Michikazu Matsumoto , Masafumi Kubota , Seiji Ueda , Hiroshi Iwai , Kazuo Tsutsui , Kuniyuki Kakushima
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/3205
CPC分类号： H01L21/28518 , H01L21/28052 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A gate electrode is formed on a semiconductor substrate containing silicon, then source/drain regions are formed in regions of the semiconductor substrate located to both sides of the gate electrode, and then a nickel alloy silicide layer is formed on at least either the gate electrode or the source/drain regions. In the step of forming the nickel alloy silicide layer, a nickel alloy film and a nickel film are sequentially deposited on the semiconductor substrate and thereafter subjected to heat treatment.
摘要翻译：在包含硅的半导体衬底上形成栅电极，然后在位于栅电极两侧的半导体衬底的区域中形成源极/漏极区，然后在栅极上至少形成一个镍合金硅化物层或源极/漏极区域。在形成镍合金硅化物层的步骤中，在半导体衬底上依次沉积镍合金膜和镍膜，然后进行热处理。

87. 发明授权

US07196672B2 Portable radio communication apparatus provided with a part of a housing operating as an antenna 有权
标题翻译：具有作为天线工作的壳体的一部分的便携式无线通信装置
公开(公告)号：US07196672B2
公开(公告)日：2007-03-27
申请号：US11320812
申请日：2005-12-30
申请人： Hiroshi Iwai , Atsushi Yamamoto , Kenichi Yamada
发明人： Hiroshi Iwai , Atsushi Yamamoto , Kenichi Yamada
IPC分类号： H01Q1/24 , H04M1/00
CPC分类号： H01Q5/00 , H01Q1/24 , H01Q1/27 , H01Q1/38 , H01Q3/44 , H01Q5/364 , H01Q5/40
摘要： In a portable radio communication apparatus including a housing, at least one part of the housing is formed as a housing electrical conductor portion by an electrically conductive material. The housing electrical conductor portion is connected with a radio communication circuit of the portable radio communication apparatus so as to operate as at least one part of an unbalanced type antenna of the radio communication circuit.
摘要翻译：在包括壳体的便携式无线电通信装置中，壳体的至少一部分通过导电材料形成为壳体电导体部分。壳体电导体部分与便携式无线电通信装置的无线电通信电路连接，以便作为无线电通信电路的不平衡型天线的至少一部分工作。

88. 发明申请

US20050224898A1 MOSFET with a thin gate insulating film 失效
标题翻译：具有薄栅绝缘膜的MOSFET
公开(公告)号：US20050224898A1
公开(公告)日：2005-10-13
申请号：US11143594
申请日：2005-06-03
申请人： Hisayo Momose , Hiroshi Iwai , Masanobu Saito , Tatsuya Ohguro , Mizuki Ono , Takashi Yoshitomi , Shinichi Nakamura
发明人： Hisayo Momose , Hiroshi Iwai , Masanobu Saito , Tatsuya Ohguro , Mizuki Ono , Takashi Yoshitomi , Shinichi Nakamura
IPC分类号： H01L21/225 , H01L21/336 , H01L27/088 , H01L29/423 , H01L29/76 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/2255 , H01L21/2256 , H01L21/28211 , H01L27/0629 , H01L27/088 , H01L29/42364 , H01L29/42372 , H01L29/78
摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed an the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.
摘要翻译：半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成所述基板的栅电极（2）以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅电极（2）和漏区（6）的电压为1.5V以下。因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

89. 发明授权

US5698881A MOSFET with solid phase diffusion source 失效
标题翻译：具有固相扩散源的MOSFET
公开(公告)号：US5698881A
公开(公告)日：1997-12-16
申请号：US353240
申请日：1994-12-02
申请人： Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata , Tatsuya Ooguro , Claudio Fiegna
发明人： Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata , Tatsuya Ooguro , Claudio Fiegna
IPC分类号： H01L21/033 , H01L21/225 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/08 , H01L29/423 , H01L29/76
CPC分类号： H01L29/6659 , H01L21/0338 , H01L21/2255 , H01L21/28035 , H01L21/28123 , H01L21/823814 , H01L27/0928 , H01L29/0847 , H01L29/42376 , H01L29/66628
摘要： A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the junction depth x.sub.j �nm! in the source and drain diffusion layer regions and the effective channel length L.sub.eff �nm! is determined by L.sub.eff >0.69 x.sub.j -6.17.
摘要翻译： MOS型半导体器件具有长度为170nm（0.17μm）以下的栅极，沟道附近的源极和漏极扩散层的结深度为22nm以下，表面上的杂质浓度在源极和漏极扩散层中形成1020cm-3以上。这种结构使用从950℃到1050℃的热范围的固相扩散和/或通过灰化或蚀刻使栅极宽度变窄来获得。其他MOS型半导体器件的特征在于源极和漏极扩散层区域中的结深度xj [nm]与有效沟道长度Leff [nm]之间的关系由Leff> 0.69×j-6.17确定。

90. 发明授权

US5237188A Semiconductor device with nitrided gate insulating film 失效
标题翻译：具有氮化栅极绝缘膜的半导体器件
公开(公告)号：US5237188A
公开(公告)日：1993-08-17
申请号：US798098
申请日：1991-11-27
申请人： Hiroshi Iwai , Toyota Morimoto , Hisayo S. Momose , Kikuo Yamabe , Yoshio Ozawa
发明人： Hiroshi Iwai , Toyota Morimoto , Hisayo S. Momose , Kikuo Yamabe , Yoshio Ozawa
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8238 , H01L29/51
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/823857 , H01L29/513 , H01L29/518 , H01L29/66575 , H01L21/28211
摘要： A semiconductor device formed on a silicon substrate consisting of the steps of producing a silicon oxide film on the silicon substrate, producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.
摘要翻译：一种形成在硅衬底上的半导体器件，包括在硅衬底上制造氧化硅膜的步骤，在氧化硅膜上产生薄氮化硅膜，在氮气气氛中对氮化硅膜进行氮化，产生氮化硅膜上的导电膜在氮气气氛中氮化，从硅氧化膜，氮化硅膜和导电膜产生栅极区，沟道区位于硅衬底的栅极区下方，在所述硅衬底中邻近所述沟道区的一侧产生源极区，在所述硅衬底中与所述沟道区的另一侧相邻的漏极区产生，并且在所述源极区，所述漏极区和所述栅极上产生布线区地区。

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