会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 82. 发明授权
    • Cache memory management apparatus having a replacement method based on
the total data retrieval time and the data size
    • 具有基于总数据检索时间和数据大小的替换方法的缓存存储器管理装置
    • US5787471A
    • 1998-07-28
    • US814600
    • 1997-03-10
    • Shinji InoueTakashi KakiuchiHiroki NakamuraMasahiro Ooashi
    • Shinji InoueTakashi KakiuchiHiroki NakamuraMasahiro Ooashi
    • G06F12/12G06F12/00
    • G06F12/121
    • In a cache memory management device, a time measuring unit measures a time period required to obtain data from a database. The data obtained from the database is linked to the time information and both are stored in a data cache unit. If the data cache does not have sufficient room to store the data obtained from the database, a data replacement determination is made. In one embodiment, the data is replaced by referring to the total data access time. In a second embodiment, if a statistics processing unit judges that the access time and the size of each data are proportional to each other, then cache data is replaced by referring to the size information from a size calculation unit. If, however, the statistics processing unit judges that the access time and the size of each data are not proportional to each other, cache data is replaced by referring to the time information from the time measuring unit.
    • 在高速缓冲存储器管理装置中,时间测量单元测量从数据库获得数据所需的时间段。 从数据库获得的数据链接到时间信息,并且两者都存储在数据高速缓存单元中。 如果数据高速缓存没有足够的空间存储从数据库获得的数据,则进行数据替换确定。 在一个实施例中,通过参考总数据访问时间来替换数据。 在第二实施例中,如果统计处理单元判断每个数据的访问时间和大小彼此成比例,则通过参考来自大小计算单元的大小信息来替换高速缓存数据。 然而,如果统计处理单元判定每个数据的访问时间和大小彼此不成比例,则参考来自时间测量单元的时间信息来代替高速缓存数据。
    • 83. 发明授权
    • Internal time-out circuit for CMOS dynamic RAM
    • CMOS动态RAM的内部超时电路
    • US4707626A
    • 1987-11-17
    • US634897
    • 1984-07-26
    • Shinji Inoue
    • Shinji Inoue
    • G11C11/407G11C11/34H03K3/355H03K5/13H03K3/284H03K5/153H03K17/30H03K19/094
    • H03K3/355
    • A delay circuit for internal clock generation in a dynamic RAM uses a one-shot multivibrator composed of a pair of cross-coupled CMOS NOR gates with a RC delay circuit in the coupling path between the output of one NOR gate and the input of the other. The RC delay circuit uses an MOS transistor as the resistor, with the gate of this device connected to the supply voltage, so the resistance varies with changes in the supply. A CMOS inverter stage in the delay circuit has its input connected across the capacitor of the RC delay, so the trip point will vary with threshold voltage. In a dynamic RAM, this circuit may be used to establish the critical timing between write and read mode.
    • 用于动态RAM中内部时钟产生的延迟电路使用由一对交叉耦合的CMOS或非门组成的单稳态多谐振荡器,其中一个或非门的输出与另一个或非门的输入之间的耦合路径中具有RC延迟电路 。 RC延迟电路使用MOS晶体管作为电阻,该器件的栅极连接到电源电压,因此电阻随电源的变化而变化。 延迟电路中的CMOS反相器级的输入端连接在RC延迟的电容器两端,因此跳变点将随阈值电压而变化。 在动态RAM中,该电路可用于建立写入和读取模式之间的关键定时。
    • 84. 发明授权
    • CMOS substrate bias generator
    • CMOS衬底偏置发生器
    • US4631421A
    • 1986-12-23
    • US640720
    • 1984-08-14
    • Shinji InoueRama S. Akundi
    • Shinji InoueRama S. Akundi
    • G05F3/20G11C5/14H03L1/00
    • G11C5/146G05F3/205
    • A generator for producing a negative bias voltage on a semiconductor device employs an on-chip oscillator driving two charge pump circuits. The oscillator produces a frequency inversely related to the negative bias, using a feedback circuit, thus reducing standby current. Each of the charge pumps include a CMOS inverter for controlling the transistor that functions as a diode connection to the ground terminal, producing an efficient charge transfer and speeding up generation of the bias voltage. Both charge pumps are used during power-up so the bias is rapidly increased to the operating level, then one is turned off to reduce current drain. A shunt circuit prevents CMOS latch-up during power-UP by coupling the substrate node to ground, preventing forward bias of N+ source/drain regions with respect to P substrate.
    • 用于在半导体器件上产生负偏压的发生器采用驱动两个电荷泵电路的片上振荡器。 振荡器产生与负偏压成反比的频率,使用反馈电路,从而降低待机电流。 每个电荷泵包括用于控制用作到接地端子的二极管连接的晶体管的CMOS反相器,产生有效的电荷传输并加速产生偏置电压。 在上电期间使用两个电荷泵,因此偏置快速增加到工作电平,然后关闭电源以减少漏电。 分流电路通过将衬底节点耦合到地来防止上电期间的CMOS闩锁,从而防止N +源极/漏极区相对于P衬底的正向偏置。
    • 87. 发明授权
    • File-update apparatus for updating a file recorded on a recording medium
    • 用于更新记录在记录介质上的文件的文件更新装置
    • US07533378B2
    • 2009-05-12
    • US10685539
    • 2003-10-16
    • Takuji MaedaShinji Inoue
    • Takuji MaedaShinji Inoue
    • G06F9/44
    • G06F17/30067G06F11/1435
    • A file-update apparatus, which can mount a removable information recording medium storing a FAT and a directory entry that show a storage location, on the medium, of data constituting a content of a file, and which executes a plurality of update procedures to update the file, records progress information showing which of the update procedures have been executed in updating the file into an internal memory having a continuous power supply. Even if an abnormal stoppage of the update procedures caused by a power-down or the like occurs during updating of the FAT, for example, the progress and update information remain in the memory. Thus, the FAT and the like can be re-updated and inconsistencies resolved using this information, after recovering from the abnormal stoppage.
    • 一种文件更新装置,其能够在介质上安装存储FAT和存储位置的目录条目的可移动信息记录介质,构成文件内容的数据,并且执行多个更新程序来更新 该文件记录显示在将文件更新为具有连续电源的内部存储器中执行了更新程序的进度信息。 即使在更新FAT期间发生由掉电等引起的更新过程的异常停止,例如,进度和更新信息保留在存储器中。 因此,在从异常停止恢复之后,可以使用该信息来重新更新FAT等并且解决不一致。