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81. 发明授权

US08154209B2 Modulated multi-frequency processing method 有权
标题翻译：调制多频处理方法
公开(公告)号：US08154209B2
公开(公告)日：2012-04-10
申请号：US12621590
申请日：2009-11-19
申请人： Alexei Marakhtanov , Eric Hudson , Rajhinder Dhindsa , Andrew Bailey
发明人： Alexei Marakhtanov , Eric Hudson , Rajhinder Dhindsa , Andrew Bailey
IPC分类号： H05B31/26
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32137 , H01J37/32146 , H01J2237/334 , H01J2237/3348
摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.
摘要翻译：提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。最大幅度部分比最小振幅部分的幅度更大。占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。第二周期部分在最大振幅部分期间另外具有第二频率。第二周期部分的幅度调制被锁相到第一连续周期部分。

82. 发明授权

US07867355B2 Adjustable height PIF probe 有权
标题翻译：可调高度PIF探头
公开(公告)号：US07867355B2
公开(公告)日：2011-01-11
申请号：US12333209
申请日：2008-12-11
申请人： Christopher Kimball , Eric Hudson , Douglas Keil , Alexei Marakhtanov
发明人： Christopher Kimball , Eric Hudson , Douglas Keil , Alexei Marakhtanov
IPC分类号： C23F1/02 , C23C16/00
CPC分类号： H01J37/32935
摘要： A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.
摘要翻译：提供了一种用于等离子体处理室的等离子体探针组件。提供了在半导体探针元件的第一端具有探针表面的半导体探针元件。电连接器电连接到半导体探针元件。电绝缘套管围绕探头元件的至少一部分。调整装置连接到半导体探针，使得探针表面与等离子体处理室的内部腔室表面共面。

83. 发明授权

US07723994B2 Plasma processing chamber with an apparatus for measuring a set of electrical characteristics in a plasma 有权
标题翻译：等离子体处理室，其具有用于测量等离子体中的一组电特性的装置
公开(公告)号：US07723994B2
公开(公告)日：2010-05-25
申请号：US11948926
申请日：2007-11-30
申请人： Christopher Kimball , Eric Hudson , Douglas Keil , Alexei Marakhtanov
发明人： Christopher Kimball , Eric Hudson , Douglas Keil , Alexei Marakhtanov
IPC分类号： G01N27/62 , H05B31/26
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： A plasma processing chamber with a probe apparatus configured to measure a set of electrical characteristics in a plasma is disclosed. The plasma processing chamber includes a set of plasma chamber surfaces configured to be exposed to the plasma. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers.
摘要翻译：公开了一种具有配置成测量等离子体中的一组电特性的探针装置的等离子体处理室。等离子体处理室包括被配置为暴露于等离子体的一组等离子体室表面。探针装置包括构造成暴露于等离子体的收集盘结构，由此收集盘结构与等离子体腔表面中的至少一个共面。探针装置还包括导电路径，该导电路径被配置为将该组特征从收集盘结构传送到一组换能器。

84. 发明申请

US20090065148A1 METHODS AND APPARATUS FOR IGNITING A LOW PRESSURE PLASMA 审中-公开
标题翻译：用于点燃低压等离子体的方法和装置
公开(公告)号：US20090065148A1
公开(公告)日：2009-03-12
申请号：US12209163
申请日：2008-09-11
申请人： Eric Hudson , Alexei Marakhtanov
发明人： Eric Hudson , Alexei Marakhtanov
IPC分类号： C23F1/00
CPC分类号： H01J37/32009 , H01J37/321
摘要： A plasma ignition apparatus configured to strike a plasma in a plasma processing chamber is provided. The apparatus includes an ignition electrode configured to strike a plasma from a gas mixture at a strike frequency. The apparatus also includes at least one powered electrode configured to sustain the plasma at a target frequency, wherein the strike frequency is greater than the target frequency. A first surface area of the ignition electrode is substantially less than a second surface area of the at least one powered electrode, and the ignition electrode is de-energized while processing a substrate in the plasma processing chamber.
摘要翻译：提供了一种等离子体点火装置，其被配置为在等离子体处理室中击打等离子体。该装置包括一个点火电极，其配置成以一个击打频率从气体混合物中冲击等离子体。该装置还包括至少一个被配置为以目标频率维持等离子体的供电电极，其中击打频率大于目标频率。点火电极的第一表面积基本上小于至少一个动力电极的第二表面积，并且点燃电极在处理等离子体处理室中的衬底时被断电。

85. 发明申请

US20120160941A1 SHOWERHEAD ELECTRODES 有权
标题翻译：淋浴电极
公开(公告)号：US20120160941A1
公开(公告)日：2012-06-28
申请号：US13409527
申请日：2012-03-01
申请人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
发明人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
IPC分类号： B05B5/00
CPC分类号： H01J37/04 , C23C16/4401 , C23C16/45565 , H01J37/3255 , H01J37/32605 , H01J37/32724 , H01J2237/032
摘要： A silicon-based showerhead electrode is provided that can include a backside, a frontside, and a plurality of showerhead passages extending from the backside of the silicon-based showerhead electrode to the frontside of the silicon-based showerhead electrode. The silicon-based showerhead electrode can comprise single crystal silicon. The silicon-based showerhead electrode may further include a plurality of partial recesses formed within the single crystal silicon along the backside of the silicon-based showerhead electrode. The plurality of partial recesses can leave a thickness of single crystal silicon between each of the partial recesses and the frontside of the silicon-based showerhead electrode.
摘要翻译：提供一种硅基喷头电极，其可以包括从硅基喷头电极的背面延伸到硅基喷头电极的前侧的背面，前侧和多个喷头通道。硅基喷头电极可以包括单晶硅。硅基喷头电极还可以包括沿着硅基喷头电极的背面形成在单晶硅内的多个部分凹部。多个部分凹部可以在每个部分凹部和硅基喷头电极的前侧之间留下单晶硅的厚度。

86. 发明授权

US08268117B2 Showerhead electrodes 有权
标题翻译：喷头电极
公开(公告)号：US08268117B2
公开(公告)日：2012-09-18
申请号：US13409527
申请日：2012-03-01
申请人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
发明人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/04 , C23C16/4401 , C23C16/45565 , H01J37/3255 , H01J37/32605 , H01J37/32724 , H01J2237/032
摘要： A silicon-based showerhead electrode is provided that can include a backside, a frontside, and a plurality of showerhead passages extending from the backside of the silicon-based showerhead electrode to the frontside of the silicon-based showerhead electrode. The silicon-based showerhead electrode can comprise single crystal silicon. The silicon-based showerhead electrode may further include a plurality of partial recesses formed within the single crystal silicon along the backside of the silicon-based showerhead electrode. The plurality of partial recesses can leave a thickness of single crystal silicon between each of the partial recesses and the frontside of the silicon-based showerhead electrode.
摘要翻译：提供一种硅基喷头电极，其可以包括从硅基喷头电极的背面延伸到硅基喷头电极的前侧的背面，前侧和多个喷头通道。硅基喷头电极可以包括单晶硅。硅基喷头电极还可以包括沿着硅基喷头电极的背面形成在单晶硅内的多个部分凹部。多个部分凹部可以在每个部分凹部和硅基喷头电极的前侧之间留下单晶硅的厚度。

87. 发明授权

US08216418B2 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings 有权
标题翻译：使用导热垫圈和O形圈的电极组件和等离子体处理室
公开(公告)号：US08216418B2
公开(公告)日：2012-07-10
申请号：US12112112
申请日：2008-04-30
申请人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
发明人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32541 , H01J37/32724
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, a thermally conductive gasket, and a plurality of o-rings, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a thermal interface. The thermally conductive gasket and the o-rings are positioned along this thermal interface with the o-rings separating the thermally conductive gasket from the showerhead passages such that the gasket is isolated from the showerhead passages. The gasket may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供一种电极组件，其包括热控制板，硅基喷头电极，导热衬垫和多个O形环，其中热控制器的前侧的各个轮廓板和喷头电极的背面配合以限定热界面。导热垫圈和O形环沿着该热界面定位，O形环将导热垫圈与喷头通道分开，使得垫圈与喷头通道隔离。衬垫可以促进从喷头电极到热控制板的热界面的热传递。

88. 发明申请

US20100252200A1 GROUNDED CONFINEMENT RING HAVING LARGE SURFACE AREA 有权
标题翻译：具有大面积区域的接地约束环
公开(公告)号：US20100252200A1
公开(公告)日：2010-10-07
申请号：US12570359
申请日：2009-09-30
申请人： Alexei Marakhtanov , Rajhinder Dhindsa
发明人： Alexei Marakhtanov , Rajhinder Dhindsa
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32422 , H01J37/32495 , H01J37/32623
摘要： A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are arranged such that the upper confinement chamber portion inner surface, the lower confinement chamber portion inner surface, the confinement ring inner surface and the electro-static chuck upper surface surround a plasma-forming space that is capable of receiving the material. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are operable to transform the material into a plasma when the electro-static chuck receives the driving signal. The confinement ring has a non-rectangular cross section.
摘要翻译：提供了与驱动器和材料供应源一起使用的晶片处理系统。驱动器可操作以产生驱动信号。材料供应源可操作以提供材料。晶片处理系统包括上限制室部分，下限制室部分，限制环和静电卡盘。上约束室部分具有上约束室部分内表面。下部限制室部分可拆卸地设置成与上部限制室部分接触。下部限制室部分具有下部限制室部分内表面。限制环可拆卸地设置成与上部限制室部分内表面和下部限制室部分内表面接触。限制环具有限制环内表面。静电卡盘具有静电卡盘上表面，并被布置成接收驱动信号。上部限制室部分，下部限制室部分，限制环和静电卡盘被布置成使得上部限制室部分内表面，下部限制室部分内表面，限制环内表面和电 - 静态卡盘上表面包围能够接收材料的等离子体形成空间。当静电卡盘接收到驱动信号时，上部限制室部分，下部限制室部分，限制环和静电卡盘可操作以将材料转换成等离子体。限制环具有非矩形截面。

89. 发明申请

US20090095424A1 SHOWERHEAD ELECTRODE ASSEMBLIES AND PLASMA PROCESSING CHAMBERS INCORPORATING THE SAME 有权
标题翻译：淋浴电极组件和等离子体加工炉
公开(公告)号：US20090095424A1
公开(公告)日：2009-04-16
申请号：US11871586
申请日：2007-10-12
申请人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
发明人： Greg Bettencourt , Raj Dhindsa , George Diercks , Randall A. Hardin , Jon Keihl , Duane Lytle , Alexei Marakhtanov , Roger Patrick , John Pegg , Shannon Spencer
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： H01J37/04 , C23C16/4401 , C23C16/45565 , H01J37/3255 , H01J37/32605 , H01J37/32724 , H01J2237/032
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware, wherein the silicon-based showerhead electrode comprises a plurality of partial recesses formed in the backside of the silicon-based showerhead electrode and backside inserts positioned in the partial recesses. The thermal control plate comprises securing hardware passages configured to permit securing hardware to access the backside inserts. The securing hardware and the backside inserts are configured to maintain engagement of the thermal control plate and the silicon-based showerhead electrode and to permit disengagement of the thermal control plate and the silicon-based showerhead electrode while isolating the silicon-based electrode material of the silicon-based showerhead electrode from frictional contact with the securing hardware during disengagement.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供一种电极组件，其包括热控制板，硅基喷头电极和固定硬件，其中硅基喷头电极包括多个部分凹部，其形成在硅基喷头电极和位于部分凹部中的背面插入件。热控制板包括固定硬件通道，其配置成允许固定硬件以接近背面插入件。固定硬件和后侧插入件构造成保持热控制板和硅基喷头电极的接合，并且允许热控制板和硅基喷头电极分离，同时隔离硅基电极材料的硅基电极材料硅基喷头电极在分离时与固定硬件摩擦接触。

90. 发明申请

US20090236040A1 ELECTRODE ASSEMBLY AND PLASMA PROCESSING CHAMBER UTILIZING THERMALLY CONDUCTIVE GASKET 有权
标题翻译：电极组件和等离子体加热室，采用导热气体
公开(公告)号：US20090236040A1
公开(公告)日：2009-09-24
申请号：US12050195
申请日：2008-03-18
申请人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
发明人： Roger Patrick , Raj Dhindsa , Greg Bettencourt , Alexei Marakhtanov
IPC分类号： H01L21/3065 , C23C16/44 , C23C16/513
CPC分类号： C23C16/45565 , H01J37/32541 , H01J37/32724
摘要： The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and a thermally conductive gasket, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a disjointed thermal interface comprising portions proximal to showerhead passages of the showerhead electrode and portions displaced from the showerhead passages. The displaced portions are recessed relative to the proximal portions and are separated from the showerhead passages by the proximal portions of the thermal interface. The gasket is positioned along the displaced portions such that the gasket is isolated from the showerhead passages and may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.
摘要翻译：本发明一般涉及等离子体处理，更具体地，涉及其中使用的等离子体处理室和电极组件。根据本发明的一个实施例，提供了一种电极组件，其包括热控制板，硅基喷头电极和导热衬垫，其中热控制板的前侧和喷头的背面的各自的轮廓电极配合以限定不连接的热界面，其包括靠近喷头电极的喷头通道的部分和从喷头通道移位的部分。移位部分相对于近端部分凹陷，并且通过热界面的近端部分与喷头通道分离。垫圈沿着移位的部分定位，使得垫圈与喷头通道隔离，并且可以促进跨过从喷头电极到热控制板的热界面的热传递。

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