专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20090126623A1 Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor 审中-公开
标题翻译： III族元素氮化物半导体的制造装置及其制造方法
公开(公告)号：US20090126623A1
公开(公告)日：2009-05-21
申请号：US12289739
申请日：2008-11-03
申请人： Shiro Yamazaki
发明人： Shiro Yamazaki
IPC分类号： C30B19/08
CPC分类号： C30B29/403 , C30B19/02 , C30B19/062 , Y10T117/1024
摘要： The present invention provides an apparatus for producing a Group III nitride semiconductor, which enables production of a uniform Si-doped GaN crystal. In one embodiment of the invention, an apparatus for producing a Group III nitride semiconductor includes a supply tube for supplying nitrogen and silane, a Ga-supplying apparatus for supplying Ga melt to a crucible, and an Na-supplying apparatus for supplying Na melt to the crucible. Nitrogen and a dopant is mixed together, and the gas mixture is supplied through one single supply tube without provision of a conventionally employed supply tube for only supplying a dopant. Thus, dead space in a reaction vessel is reduced, and vaporization of Na is suppressed, whereby a high-quality, Si-doped GaN crystal can be produced.
摘要翻译：本发明提供一种用于制造III族氮化物半导体的装置，其能够生产均匀的Si掺杂的GaN晶体。在本发明的一个实施例中，用于制造III族氮化物半导体的装置包括供氮和硅烷的供应管，用于向坩埚供应Ga熔体的Ga供应装置，以及供应Na熔体的Na供应装置坩埚。将氮和掺杂剂混合在一起，并且气体混合物通过一个单独的供应管供应，而不需要仅供给掺杂剂的常规使用的供应管。因此，反应容器中的死空间减小，并且Na的蒸发被抑制，由此可以生产出高品质的Si掺杂的GaN晶体。

82. 发明授权

US07084421B2 Light-emitting device using group III nitride group compound semiconductor 失效
标题翻译：使用III族氮化物类化合物半导体的发光装置
公开(公告)号：US07084421B2
公开(公告)日：2006-08-01
申请号：US09725496
申请日：2000-11-30
申请人： Masayoshi Koike , Shiro Yamazaki , Akira Kojima
发明人： Masayoshi Koike , Shiro Yamazaki , Akira Kojima
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/32341
摘要： A light-emitting semiconductor device provides an active layer which comprises thirteen (13) layers that includes six (6) pairs of quantum barrier layers made of Al0.95In0.05N and quantum well layers made of Al0.70In0.30N, which are laminated together alternately. The semiconductor device may also comprise a quantum well layer having a high composition ratio of indium (In). Forming the quantum barrier layer and the quantum well layer to have a high composition ratio of indium (In) increases the lattice constant of the active layer of the semiconductor device.
摘要翻译：一种发光半导体器件提供了一种有源层，其包括十三（13）层，其包括六（6）对量子阻挡层，所述量子势垒层由Al 0.95 N和N N N制成，交替地层叠在一起的由Al 0.70 N 3 O 3 N制成的量子阱层。半导体器件还可以包括具有高的铟（In）组成比的量子阱层。形成量子势垒层和量子阱层以具有高的铟（In）组成比增加了半导体器件的有源层的晶格常数。

83. 发明授权

US06593599B1 Light-emitting semiconductor device using gallium nitride group compound 失效
公开(公告)号：US06593599B1
公开(公告)日：2003-07-15
申请号：US09417778
申请日：1999-10-14
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

84. 发明授权

US06362017B1 Light-emitting semiconductor device using gallium nitride group compound 失效
标题翻译：使用氮化镓族化合物的发光半导体装置
公开(公告)号：US06362017B1
公开(公告)日：2002-03-26
申请号：US09586607
申请日：2000-06-02
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L2100
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法，通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

85. 发明授权

US6083535A Effervescent granular preparation for keeping cut flower freshness 失效
标题翻译：用于保持切花新鲜度的泡腾颗粒制剂
公开(公告)号：US6083535A
公开(公告)日：2000-07-04
申请号：US930995
申请日：1997-12-29
申请人： Tadahiko Chiba , Shiro Yamazaki , Toshihide Saishoji
发明人： Tadahiko Chiba , Shiro Yamazaki , Toshihide Saishoji
IPC分类号： A01N3/02 , A01N43/653 , A61K9/14
CPC分类号： A01N3/02 , A01N43/653
摘要： An effervescent granular preparation for keeping cut flower freshness includes an azole-substituted cyclopentanol derivative represented by formula (I) (set forth below) and 2-bromo-2-nitro-1, 3-propanediol as effective components and to a process for producing the same. The effervescent granular preparation is produced by granulation of a mixture containing at least one of glucose, D-mannitol and sucrose as an excipient by incorporating an organic acid such as citric acid or malic acid and a hydrogen carbonate such as sodium hydrogen carbonate. ##STR1## wherein A represents a nitrogen atom or a CH group, R.sup.1 and R.sup.2 represent each independently a hydrogen or a C.sub.1 -C.sub.3 alkyl group, and X represents a hydrogen atom or a halogen atom.
摘要翻译： PCT No.PCT / JP96 / 00445 Sec。 371日期1997年12月29日第 102（e）日期1997年12月29日PCT提交1996年2月27日PCT公布。出版物WO96 / 32012 PCT 日期1996年10月17日用于保持切花新鲜度的泡腾颗粒制剂包括由式（I）表示的唑类取代的环戊醇衍生物（下文）和作为有效成分的2-溴-2-硝基-1,3-丙二醇，涉及其制造方法。通过掺入有机酸如柠檬酸或苹果酸和碳酸氢钠如碳酸氢钠，通过造粒含有葡萄糖，D-甘露糖醇和蔗糖中的至少一种作为赋形剂的混合物来制备泡腾颗粒制剂。其中A表示氮原子或CH基团，R 1和R 2各自独立地表示氢或C 1 -C 3烷基，X表示氢原子或卤素原子。

86. 发明授权

US5362885A N-substituted-3-(nitrogen-containing 5-membered ring)-benzenesulfonamide derivatives 失效
标题翻译： N-取代-3-（含氮5元环） - 苯磺酰胺衍生物
公开(公告)号：US5362885A
公开(公告)日：1994-11-08
申请号：US081945
申请日：1993-06-25
申请人： Hideo Arabori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
发明人： Hideo Arabori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
IPC分类号： C07D403/12 , A01N47/36 , C07D207/32 , C07D207/333 , C07D207/337 , C07D207/44 , C07D207/452 , C07D231/12 , C07D521/00 , C07D207/325
CPC分类号： C07D207/333 , A01N47/36 , C07D207/337 , C07D207/452 , C07D231/12 , C07D233/56 , C07D249/08 , C07D521/00
摘要： Disclosed herein are N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives of the formula (I): ##STR1## R.sup.1 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(nitrogen-containing 5-membered ring)benzenesulfonamide derivatives as active ingredients.
摘要翻译：本文公开了式（I）的N-取代-3-（含氮五元环）苯磺酰胺衍生物：其中， Z是CH或N; X1是C1-C3烷基，C1-C3烷氧基或C1; X2是C1-C3烷基或C1-C3烷氧基，其制备方法和含有N-取代-3-（含氮五元环）苯磺酰胺衍生物作为活性成分的除草组合物。

87. 发明授权

US4863505A Novel derivative of azole, and agricultural and horticultural composition containing the same as an active incredient 失效
标题翻译：唑类的新衍生物，以及与活性成分相同的农业和园艺成分
公开(公告)号：US4863505A
公开(公告)日：1989-09-05
申请号：US903992
申请日：1986-09-04
申请人： Satoru Kumazawa , Atsushi Ito , Nobuo Sato , Toshihide Saishoji , Masahiro Hamada , Shiro Yamazaki , Hiroyuki Enari
发明人： Satoru Kumazawa , Atsushi Ito , Nobuo Sato , Toshihide Saishoji , Masahiro Hamada , Shiro Yamazaki , Hiroyuki Enari
IPC分类号： A01N43/50 , A01N43/653 , C07D233/58 , C07D233/60 , C07D249/08 , C07D521/00
CPC分类号： C07D231/12 , A01N43/50 , A01N43/653 , C07D233/56 , C07D249/08
摘要： Disclosed herein are a derivative of azole having a usefulness in controlling plant fungal diseases, in regulating plant growth and in killing weeds, a process for producing the derivative of azole and a composition having a fungicidal activity, a plant growth regulating activity and a herbicidal activity and containing the derivative of azole as an active ingredient for use in agriculture and horticulture.
摘要翻译：本文公开了具有控制植物真菌病，调节植物生长和杀死杂草的唑类衍生物，制备唑类衍生物的方法和具有杀真菌活性，植物生长调节活性和除草活性的组合物并含有唑类衍生物作为农业和园艺用的活性成分。

88. 发明授权

US4795484A Herbicidal composition containing a derivative of 1,2,4-triazole as an active ingredient 失效
标题翻译：含有1,2,4-三唑衍生物作为活性成分的除草组合物
公开(公告)号：US4795484A
公开(公告)日：1989-01-03
申请号：US858531
申请日：1986-04-24
申请人： Katsumichi Aoki , Takafumi Shida , Takeo Watanabe , Keigo Satake , Hiroyasu Shinkawa , Shiro Yamazaki
发明人： Katsumichi Aoki , Takafumi Shida , Takeo Watanabe , Keigo Satake , Hiroyasu Shinkawa , Shiro Yamazaki
IPC分类号： A01N43/653 , C07D249/10
CPC分类号： A01N43/653 , C07D249/10
摘要： Disclosed herein is herbicidal composition comprising a derivative of 1,2,4-triazole as an active ingredient, represented by the general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom, a halogen atom or a C.sub.1 -C.sub.2) alkyl group; R.sup.2 represents a hydrogen atom, a halogen atom, a (C.sub.1 -C.sub.2) alkyl group fluoromethyl group (--CH.sub.2 F),3,3,3-trifluoropopyl group, methoxy group, cyano group, methoxymethyl group, methylthio group, methoxycarbonyl group or isopropoxycarbonyl group and R.sup.3 represents a thiocarbamoyl group or a group represented by the general formula (II): ##STR2## wherein R.sup.4 represents a hydrogen atom, a (C.sub.1 -C.sub.2) alkyl group or a hydroxy (C.sub.1 -C.sub.2) alkyl group and R.sup.5 represents a hydrogen atom, a C.sub.1 -C.sub.2) alkyl group, halogeno (C.sub.1 -C.sub.2) alkyl group, hydroxy (C.sub.1 -C.sub.2) alkyl group, cyanomethyl group, acetyl group, halogenoacetyl group, methoxyacetyl group, amino group, phenyl group, methoxy group, hydroxyl group, (C.sub.2 -C.sub.3) alkenyl group, halogeno (C.sub.2 -C.sub.3) alkenyl group, isopropylcarbonyl group, methylthiocarbamoyl group or 2-methoxyethyl group, the proviso that R.sup.2 is not a hydrogen atom, halogen atom or (C.sub.1 -C.sub.2) alkyl group when both of R.sup.4 and R.sup.5 represent hydrogen atoms, and herbicidally acceptable carrier(s) or diluent(s).
摘要翻译：本文公开了包含由通式（I）表示的1,2,4-三唑衍生物作为活性成分的除草组合物：其中R1表示氢原子，卤素原子或C1- C2）烷基; R2表示氢原子，卤素原子，（C1-C2）烷基氟甲基（-CH2F），3,3,3-三氟戊酰基，甲氧基，氰基，甲氧基甲基，甲硫基，甲氧基羰基或异丙氧基羰基基团，R 3表示硫代氨基甲酰基或由通式（II）表示的基团：其中R 4表示氢原子，（C 1 -C 2）烷基或羟基（C 1 -C 2）烷基） R5为氢原子，C1-C2）烷基，卤代（C1-C2）烷基，羟基（C1-C2）烷基，氰基甲基，乙酰基，卤代乙酰基，甲氧基乙酰基，氨基，苯基，甲氧基，羟基，（C2-C3）烯基，卤代（C2-C3）烯基，异丙基羰基，甲硫基氨基甲酰基或2-甲氧基乙基，条件是R2不是氢原子，卤素原子或（C1 -C 2）烷基，当R4和R5都表示氢原子，除草可接受的载体或稀释剂（ s）。

89. 发明授权

US4650515A Derivative of tetrahydrobenzothiazole and herbicidal composition containing the same as active ingredient 失效
标题翻译：四氢苯并噻唑的衍生物和含有与活性成分相同的除草组合物
公开(公告)号：US4650515A
公开(公告)日：1987-03-17
申请号：US673590
申请日：1984-11-21
申请人： Katsumichi Aoki , Takafumi Shida , Yoichi Kanda , Keigo Satake , Hiroyasu Shinkawa , Shiro Yamazaki
发明人： Katsumichi Aoki , Takafumi Shida , Yoichi Kanda , Keigo Satake , Hiroyasu Shinkawa , Shiro Yamazaki
IPC分类号： A01N43/78 , A01N47/06 , C07D277/82 , C07D417/04 , C07D417/14
CPC分类号： C07D417/04 , A01N43/78 , A01N47/06 , C07D277/82 , C07D417/14
摘要： Disclosed herein are the derivatives of tetrahydrobenzothiazole represented by the general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom, a straight-chain alkyl group having 1 to 6 carbon atoms or branched-chain alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms or a phenyl group and R.sup.2 represents a chemical group selected from the group consisting of: ##STR2## wherein R.sup.3 represents a hydrogen atom, a methyl group or an acetyl group and R.sup.4 represents a hydrogen atom, a hydroxyl group, methoxy group or acetoxy group and herbicidal compositions containing at least one of the derivatives of tetrahydrobenzothiazole as an active ingredient.
摘要翻译：本文公开了由通式（I）表示的四氢苯并噻唑的衍生物：其中R 1表示氢原子，具有1至6个碳原子的直链烷基或支链烷基，其具有1至 6个碳原子，具有3至6个碳原子的环烷基或苯基，R 2表示选自以下的化学基团：其中R 3表示氢原子，甲基或乙酰基，R4表示氢原子，羟基，甲氧基或乙酰氧基，以及含有至少一种四氢苯并噻唑衍生物作为有效成分的除草组合物。

90. 发明授权

US4624698A Herbicidal tetrahydrobenzothiazolyl-1,3,5-triazinone derivatives and compositions thereof 失效
标题翻译：除草四氢苯并噻唑基-1,3,5-三嗪酮衍生物及其组合物
公开(公告)号：US4624698A
公开(公告)日：1986-11-25
申请号：US695178
申请日：1985-01-25
申请人： Katsumichi Aoki , Takafumi Shida , Youichi Kanda , Keigo Satake , Shiro Yamazaki , Tsuneaki Chida
发明人： Katsumichi Aoki , Takafumi Shida , Youichi Kanda , Keigo Satake , Shiro Yamazaki , Tsuneaki Chida
IPC分类号： A01N43/78 , A01N43/84 , C07D417/04 , C07D417/14 , A01N43/64 , C07D413/04
CPC分类号： C07D417/04 , A01N43/78
摘要： Disclosed herein is a derivative of tetrahydrobenzothiazolyl-1,3,5-triazinone represented by the formula (I): ##STR1## wherein R is a chemical group selected from the group consisting of 1-phenylethyl, 1-methylpropyl, 2-methylpropyl, allyl, 2-propynyl, cyclopropyl, cyclopentyl, phenyl, ethoxycarbonylmethyl, 2-tetrahydrofurylmethyl, 2-acetoxyethyl, 2-chloroethyl, 2-cyanoethyl, 2-hydroxyethyl, 2-methoxyethyl, 2,2-dimethoxyethyl, 2-(propionyloxy)ethyl, 2-(ethoxycarbonyl)ethyl, 2-(4-chlorobenzoyloxy)ethyl, 1-hydroxymethyl)propyl, 3-hydroxypropyl, 3-methoxypropyl, 3-acetoxypropyl, 3-morpholinopropyl and 3-(2-methylpiperidino)propyl, and a herbicidal composition containing the derivative as an active ingredient thereof.
摘要翻译：本文公开的是由式（I）表示的四氢苯并噻唑基-1,3,5-三嗪酮的衍生物：其中R是选自1-苯基乙基，1-甲基丙基，2- 甲基丙基，烯丙基，2-丙炔基，环丙基，环戊基，苯基，乙氧基羰基甲基，2-四氢呋喃基甲基，2-乙酰氧基乙基，2-氯乙基，2-氰基乙基，2-羟基乙基，2-甲氧基乙基，2,2-二甲氧基乙基，2-（丙氧基）乙基，2-（乙氧基羰基）乙基，2-（4-氯苯甲酰氧基）乙基，1-羟基甲基）丙基，3-羟丙基，3-甲氧基丙基，3-乙酰氧基丙基，3-吗啉代丙基和3-（2-甲基哌啶子基）和含有该衍生物作为其有效成分的除草组合物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式