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81. 发明授权

US08705269B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08705269B2
公开(公告)日：2014-04-22
申请号：US13232782
申请日：2011-09-14
申请人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/16
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.
摘要翻译：根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有易磁化轴的第一和第二磁性层; 以及介于所述第一和第二磁性层之间的第一非磁性层，所述第一和第二磁性层中的至少一个包括通过堆叠第一和第二磁性膜形成的结构，所述第二磁性膜位于更靠近所述第一非磁性层的位置，所述第二磁性膜包括通过将磁性材料层和非磁性材料层重复堆叠至少两次形成的结构，所述第二磁性膜的非磁性材料层含有选自Ta，W，Hf中的至少一种元素，Zr，Nb，Mo，Ti，V和Cr中的一种，所述第一和第二磁性层之一具有通过施加电流而改变的磁化方向。

82. 发明授权

US08502331B2 Magnetoresistive effect element, magnetic memory 有权
标题翻译：磁阻效应元件，磁记忆体
公开(公告)号：US08502331B2
公开(公告)日：2013-08-06
申请号：US13234720
申请日：2011-09-16
申请人： Eiji Kitagawa , Tadaomi Daibou , Yutaka Hashimoto , Masaru Tokou , Tadashi Kai , Makoto Nagamine , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Eiji Kitagawa , Tadaomi Daibou , Yutaka Hashimoto , Masaru Tokou , Tadashi Kai , Makoto Nagamine , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.
摘要翻译：根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。磁性膜包括非晶相和粒径为0.5nm以上的晶体。

83. 发明申请

US20120099369A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120099369A1
公开(公告)日：2012-04-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

84. 发明授权

US08107281B2 Magnetoresistive element and magnetic memory 有权
公开(公告)号：US08107281B2
公开(公告)日：2012-01-31
申请号：US12879544
申请日：2010-09-10
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

85. 发明授权

US07964732B2 Substituted bicyclocarboxyamide compounds 失效
标题翻译：取代的双环羧基酰胺化合物
公开(公告)号：US07964732B2
公开(公告)日：2011-06-21
申请号：US12063159
申请日：2007-11-09
申请人： Koji Ando , Andrew Anthony Calabrese , Matthew Alexander James Duncton , Kentaro Futatsugi , Misato Hirano , Satochi Nagayama
发明人： Koji Ando , Andrew Anthony Calabrese , Matthew Alexander James Duncton , Kentaro Futatsugi , Misato Hirano , Satochi Nagayama
IPC分类号： A61P25/00 , A61P29/00 , A61P11/00 , A61P1/00
CPC分类号： C07D401/12 , C07D231/12
摘要： This invention provides a compound of the formula These compounds are useful for the treatment of disease conditions caused by overactivation of the VR1 receptor such as pain, or the like in mammal. This invention also provides a pharmaceutical composition comprising the above compound.
摘要翻译：本发明提供下式的化合物这些化合物可用于治疗哺乳动物VR1受体过度活化（如疼痛等）引起的疾病状况。本发明还提供了包含上述化合物的药物组合物。

86. 发明申请

US20110026296A1 Nonvolatile Optical Memory Element, Memory Device, and Reading Method Thereof 有权
标题翻译：非易失性光存储元件，存储器件及其读取方法
公开(公告)号：US20110026296A1
公开(公告)日：2011-02-03
申请号：US12844758
申请日：2010-07-27
申请人： Vadym Zayets , Koji Ando , Shinji Yuasa , Hidekazu Saito
发明人： Vadym Zayets , Koji Ando , Shinji Yuasa , Hidekazu Saito
IPC分类号： G11C13/06
CPC分类号： G11C13/06
摘要： A nonvolatile optical memory element in which a ferromagnetic body is provided on a semiconductor causes such a problem that in a case where magnetization of the ferromagnetic body is read by light, magneto-optical response becomes very small when the ferromagnetic body is small in volume. The present invention provides a memory element, a memory device, and a data reading method, each of which is applicable to data reading from a nonvolatile optical memory element. In a nonvolatile optical memory element having a structure in which a ferromagnetic body is provided on a semiconductor that is connected to an optical waveguide, electrons are injected into the semiconductor via the ferromagnetic body so that the electrons that are spin-polarized according to a magnetization direction of the ferromagnetic body are injected into the semiconductor, thereby enlarging a region in which a photomagnetic effect occurs effectively. By applying an electric pulse and an optical pulse to the nonvolatile optical memory element, it is possible to effectively read recorded data according to a magnetization direction of the ferromagnetic body.
摘要翻译：其中在半导体上设置铁磁体的非易失性光学存储元件引起这样的问题，即在铁磁体的磁化被光读出的情况下，当铁磁体的体积小时，磁光响应变得非常小。本发明提供了一种存储元件，存储器件和数据读取方法，每种可应用于从非易失性光学存储元件读取数据。在具有将铁磁体设置在与光波导连接的半导体上的结构的非易失性光学存储元件中，电子通过铁磁体注入到半导体中，使得根据磁化自旋极化的电子铁氧体的方向被注入到半导体中，从而扩大了有效发生光磁效应的区域。通过向非易失性光学存储元件施加电脉冲和光脉冲，可以根据铁磁体的磁化方向有效地读取记录的数据。

87. 发明申请

US20100131578A1 RANDOM NUMBER GENERATING DEVICE 有权
标题翻译：随机数生成装置
公开(公告)号：US20100131578A1
公开(公告)日：2010-05-27
申请号：US12452012
申请日：2008-03-24
申请人： Akio Fukushima , Hitoshi Kubota , Kay Yakushiji , Shinji Yuasa , Koji Ando
发明人： Akio Fukushima , Hitoshi Kubota , Kay Yakushiji , Shinji Yuasa , Koji Ando
IPC分类号： G06F7/58
CPC分类号： G06F7/588
摘要： A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease.The random number generating device includes a magnetoresistive element that has three layers consisting of a magnetization free layer, an interlayer, and a magnetization fixed layer, and has at least two resistance values depending on arrangement of magnetization in the magnetization free layer and the magnetization fixed layer, wherein the magnetoresistive element is subjected to be applied with a magnetization current so that the inversion probability of the magnetization free layer assumes a value between 0 and 1, through which the resistance value of the magnetoresistive element is extracted as random numbers.
摘要翻译：构造随机数生成装置，使其具有改善的随机数生成速率并且容易地构造紧凑电路。该随机数生成装置包括具有由磁化自由层，中间层和磁化固定层构成的三层的磁致电阻元件，并且具有取决于磁化自由层的磁化排列和磁化固定的至少两个电阻值层，其中磁阻元件经受施加磁化电流，使得磁化自由层的反转概率为0和1之间的值，磁阻元件的电阻值通过该值提取为随机数。

88. 发明申请

US20080108660A1 Benzimidazolone Carboxylic Acid Derivatives 审中-公开
标题翻译：苯并咪唑酮羧酸衍生物
公开(公告)号：US20080108660A1
公开(公告)日：2008-05-08
申请号：US11971265
申请日：2008-01-09
申请人： Koji Ando , Satoru Iguchi , Noriaki Murase , Yoshinori Murata , Toyoharu Numata , Hiroki Sone , Chikara Uchida , Tatsuo Ueki
发明人： Koji Ando , Satoru Iguchi , Noriaki Murase , Yoshinori Murata , Toyoharu Numata , Hiroki Sone , Chikara Uchida , Tatsuo Ueki
IPC分类号： A61K31/445 , C07D403/02 , A61P1/00 , C07D211/06 , A61K31/4164
CPC分类号： C07D401/12 , C07D211/26 , C07D401/06 , C07D401/14 , C07D405/06 , C07D405/14
摘要： This invention relates to compounds of the formula (I): wherein R1, R2, R3, A and m are each as described herein or a pharmaceutically acceptable salt or solvate thereof, and compositions containing such compounds and the use of such compounds in the treatment of a condition mediated by 5-HT4 receptor activity such as, but not limited to, gastroesophageal reflux disease, gastrointestinal disease, gastric motility disorder, non-ulcer dyspepsia, functional dyspepsia, irritable bowel syndrome (IBS), constipation, dyspepsia, esophagitis, gastroesophageal disease, nausea, central nervous system disease, Alzheimer's disease, cognitive disorder, emesis, migraine, neurological disease, pain, cardiovascular disorders such as cardiac failure and heart arrhythmia, diabetes and apnea syndrome.
摘要翻译：本发明涉及式（I）化合物：其中R 1，R 2，R 3，A和m各自如上所述本文或其药学上可接受的盐或溶剂合物，以及含有这些化合物的组合物以及这些化合物在治疗由5-HT 4受体活性介导的病症中的用途，所述活性例如但不限于，胃食管反流病，胃肠道疾病，胃动力障碍，非溃疡性消化不良，功能性消化不良，肠易激综合征（IBS），便秘，消化不良，食管炎，胃食管疾病，恶心，中枢神经系统疾病，阿尔茨海默病，认知障碍，呕吐，偏头痛，神经系统疾病，疼痛，心血管疾病如心力衰竭和心律失常，糖尿病和呼吸暂停综合征。

89. 发明申请

US20070273531A1 Communication antenna and pole with built-in antenna 审中-公开
标题翻译：内置天线通信天线和极
公开(公告)号：US20070273531A1
公开(公告)日：2007-11-29
申请号：US11798461
申请日：2007-05-14
申请人： Koji Ando , Takehiro Kawai
发明人： Koji Ando , Takehiro Kawai
IPC分类号： G08B13/14 , H04Q5/22
CPC分类号： H01Q3/26 , H01Q1/2216 , H01Q21/20
摘要： An antenna array part constituting a communication antenna is composed of a plurality of antenna elements. The antenna elements are arranged on an arc. This allows radio waves to be irradiated also in the exact transverse direction of the antenna array part, thereby making available the communications with an RFID tag positioned in the exact transverse direction. By shifting the phase of a radio frequency signal supplied to each antenna element or adjusting the amplitude of the radio frequency signal, it is possible to change the direction of radio beams irradiated from the antenna array part or expand the width of the radio beams thus making available with RFID tags present in a wider area.
摘要翻译：构成通信天线的天线阵列部分由多个天线元件构成。天线元件布置在弧形上。这样也能够在天线阵列部分的精确的横向上照射无线电波，从而使得与位于精确横向方向的RFID标签的通信成为可能。通过移动提供给每个天线元件的射频信号的相位或调节射频信号的幅度，可以改变从天线阵列部分照射的无线电波束的方向或扩大无线电波束的宽度，从而使得可用于存在于更广泛区域的RFID标签。

90. 发明授权

US07207325B2 Engine ignition system having noise protection circuit 有权
标题翻译：发动机点火系统具有噪声保护电路
公开(公告)号：US07207325B2
公开(公告)日：2007-04-24
申请号：US11194477
申请日：2005-08-02
申请人： Koji Ando
发明人： Koji Ando
IPC分类号： F02P3/05 , F02P3/055
CPC分类号： F02P3/0554
摘要： An ignition system for an internal combustion engine includes a switch circuit connected to an ignition coil to switch on or off current supplied to the ignition coil, a control circuit for providing a control signal for controlling the switch circuit based on the ignition signal and a protection circuit including an input terminal that receives the ignition signal, an NPN transistor having a collector connected to the input terminal, an emitter connected to a ground, a base and the collector and a parasitic diode between the collector and the emitter of the NPN transistor, in which a prescribed capacitance is formed between the base and the collector of the NPN transistor. If an electric surge that has an ascending slope comes into the input terminal, the NPN transistor to turn on to discharge the electric surge to a ground. If an electric surge that has an descending slope comes into the input terminal, it passes through the parasitic diode toward the input terminal.
摘要翻译：一种用于内燃机的点火系统包括连接到点火线圈的开关电路，以接通或断开供应到点火线圈的电流;控制电路，用于根据点火信号和保护来提供用于控制开关电路的控制信号包括接收点火信号的输入端子，具有连接到输入端子的集电极的NPN晶体管，连接到地的发射极，基极和集电极以及NPN晶体管的集电极和发射极之间的寄生二极管，其中在NPN晶体管的基极和集电极之间形成规定的电容。如果具有上升斜坡的电涌进入输入端，则NPN晶体管导通以将电涌放电到地。如果具有下降斜坡的电涌进入输入端，则其通过寄生二极管朝向输入端。

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