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1. 发明授权

US07936631B2 Non-volatile memory element and method of operation therefor 有权
标题翻译：非易失性存储元件及其操作方法
公开(公告)号：US07936631B2
公开(公告)日：2011-05-03
申请号：US12318823
申请日：2009-01-09
申请人： Vadym Zayets , Koji Ando
发明人： Vadym Zayets , Koji Ando
IPC分类号： G11C13/04
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C13/06 , H01L29/868
摘要： A very small magnetic tunnel junction is formed on a semiconductor p-i-n diode. Spin-polarized current which is generated by circular polarized light or elliptically-polarized light, is injected into a free layer of the magnetic tunnel junction so that magnetization direction (two opposite directions) in the free layer is changed based on the information, whereby information is stored in the memory element.
摘要翻译：在半导体p-i-n二极管上形成非常小的磁性隧道结。由圆偏振光或椭圆偏振光产生的自旋极化电流被注入到磁性隧道结的自由层中，使得自由层中的磁化方向（两个相反的方向）基于信息而改变，由此信息存储在存储元件中。

2. 发明申请

US20110026296A1 Nonvolatile Optical Memory Element, Memory Device, and Reading Method Thereof 有权
标题翻译：非易失性光存储元件，存储器件及其读取方法
公开(公告)号：US20110026296A1
公开(公告)日：2011-02-03
申请号：US12844758
申请日：2010-07-27
申请人： Vadym Zayets , Koji Ando , Shinji Yuasa , Hidekazu Saito
发明人： Vadym Zayets , Koji Ando , Shinji Yuasa , Hidekazu Saito
IPC分类号： G11C13/06
CPC分类号： G11C13/06
摘要： A nonvolatile optical memory element in which a ferromagnetic body is provided on a semiconductor causes such a problem that in a case where magnetization of the ferromagnetic body is read by light, magneto-optical response becomes very small when the ferromagnetic body is small in volume. The present invention provides a memory element, a memory device, and a data reading method, each of which is applicable to data reading from a nonvolatile optical memory element. In a nonvolatile optical memory element having a structure in which a ferromagnetic body is provided on a semiconductor that is connected to an optical waveguide, electrons are injected into the semiconductor via the ferromagnetic body so that the electrons that are spin-polarized according to a magnetization direction of the ferromagnetic body are injected into the semiconductor, thereby enlarging a region in which a photomagnetic effect occurs effectively. By applying an electric pulse and an optical pulse to the nonvolatile optical memory element, it is possible to effectively read recorded data according to a magnetization direction of the ferromagnetic body.
摘要翻译：其中在半导体上设置铁磁体的非易失性光学存储元件引起这样的问题，即在铁磁体的磁化被光读出的情况下，当铁磁体的体积小时，磁光响应变得非常小。本发明提供了一种存储元件，存储器件和数据读取方法，每种可应用于从非易失性光学存储元件读取数据。在具有将铁磁体设置在与光波导连接的半导体上的结构的非易失性光学存储元件中，电子通过铁磁体注入到半导体中，使得根据磁化自旋极化的电子铁氧体的方向被注入到半导体中，从而扩大了有效发生光磁效应的区域。通过向非易失性光学存储元件施加电脉冲和光脉冲，可以根据铁磁体的磁化方向有效地读取记录的数据。

3. 发明授权

US08270198B2 Nonvolatile optical memory element, memory device, and reading method thereof 有权
标题翻译：非易失性光存储元件，存储器件及其读取方法
公开(公告)号：US08270198B2
公开(公告)日：2012-09-18
申请号：US12844758
申请日：2010-07-27
申请人： Vadym Zayets , Koji Ando , Shinji Yuasa , Hidekazu Saito
发明人： Vadym Zayets , Koji Ando , Shinji Yuasa , Hidekazu Saito
IPC分类号： G11C13/06
CPC分类号： G11C13/06
摘要： A nonvolatile optical memory element in which a ferromagnetic body is provided on a semiconductor causes such a problem that in a case where magnetization of the ferromagnetic body is read by light, magneto-optical response becomes very small when the ferromagnetic body is small in volume. The present invention provides a memory element, a memory device, and a data reading method, each of which is applicable to data reading from a nonvolatile optical memory element. In a nonvolatile optical memory element having a structure in which a ferromagnetic body is provided on a semiconductor that is connected to an optical waveguide, electrons are injected into the semiconductor via the ferromagnetic body so that the electrons that are spin-polarized according to a magnetization direction of the ferromagnetic body are injected into the semiconductor, thereby enlarging a region in which a photomagnetic effect occurs effectively. By applying an electric pulse and an optical pulse to the nonvolatile optical memory element, it is possible to effectively read recorded data according to a magnetization direction of the ferromagnetic body.
摘要翻译：其中在半导体上设置铁磁体的非易失性光学存储元件引起这样的问题，即在铁磁体的磁化被光读出的情况下，当铁磁体的体积小时，磁光响应变得非常小。本发明提供了一种存储元件，存储器件和数据读取方法，每种可应用于从非易失性光学存储元件读取数据。在具有将铁磁体设置在与光波导连接的半导体上的结构的非易失性光学存储元件中，电子通过铁磁体注入到半导体中，使得根据磁化自旋极化的电子铁氧体的方向被注入到半导体中，从而扩大了有效发生光磁效应的区域。通过向非易失性光学存储元件施加电脉冲和光脉冲，可以根据铁磁体的磁化方向有效地读取记录的数据。

4. 发明申请

US20090175110A1 Non-volatile memory element and method of operation therefor 有权
标题翻译：非易失性存储元件及其操作方法
公开(公告)号：US20090175110A1
公开(公告)日：2009-07-09
申请号：US12318823
申请日：2009-01-09
申请人： Vadym Zayets , Koji Ando
发明人： Vadym Zayets , Koji Ando
IPC分类号： G11C13/04 , H01L29/82 , G11C7/00
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C13/06 , H01L29/868
摘要： A very small magnetic tunnel junction is formed on a semiconductor p-i-n diode. Spin-polarized current which is generated by circular polarized light or elliptically-polarized light, is injected into a free layer of the magnetic tunnel junction so that magnetization direction (two opposite directions) in the free layer is changed based on the information, whereby information is stored in the memory element.
摘要翻译：在半导体p-i-n二极管上形成非常小的磁性隧道结。由圆偏振光或椭圆偏振光产生的自旋极化电流被注入到磁性隧道结的自由层中，使得自由层中的磁化方向（两个相反的方向）基于信息而改变，由此信息存储在存储元件中。

5. 发明授权

US07171096B2 Non-volatile optical memory element utilizing optically induced magnetization reversal and operational method thereof 失效
标题翻译：利用光学感应磁化反转的非易失性光学存储元件及其操作方法
公开(公告)号：US07171096B2
公开(公告)日：2007-01-30
申请号：US11172861
申请日：2005-07-05
申请人： Vadym Zayets
发明人： Vadym Zayets
IPC分类号： G02B6/10
CPC分类号： G11C19/0808 , G11B13/04 , G11C11/16 , G11C13/06 , G11C19/30
摘要： The present invention relates to a high-speed optical memory element. In order to increase speed of a memory element, optical pulse is recorded and read all-optically without conversion into electrical signal at very high speed. Optically-induced spin accumulation is used for recording the ferromagnetic metal embedded into optical waveguide operates as a high speed memory element. The ferromagnetic metal is sandwiched between a conductor on one side and a tunnel barrier followed by a conductor on the other side. The voltage is applied between two conductors. For data recording, the optically induced spin-polarized tunneling and spin accumulation is used. The optically induced spin-polarized tunneling occurs due to absorption of circularly polarized light. The torque of accumulated spin reverses magnetization of ferromagnetic metal. For reading Faraday rotation or non-reciprocal loss/gain in semiconductor-ferromagnetic-metal hybrid is used.
摘要翻译：本发明涉及一种高速光存储元件。为了提高存储元件的速度，光脉冲被记录并全光读出，而不会以非常高的速度转换成电信号。光诱导的自旋累积用于记录嵌入到光波导中的铁磁金属作为高速存储元件。铁磁金属夹在一侧的导体和隧道屏障之间，之后是另一侧的导体。电压施加在两根导体之间。对于数据记录，使用光诱导的自旋极化隧道和自旋聚集。光诱导的自旋极化隧道由于圆偏振光的吸收而发生。累积自旋的转矩反转铁磁金属的磁化。对于读取法拉第旋转或半导体 - 铁磁金属混合物的不可逆损耗/增益。

6. 发明申请

US20060002037A1 Non-volatile optical memory element utilizing optically induced magnetization reversal and operational method thereof 失效
标题翻译：利用光学感应磁化反转的非易失性光学存储元件及其操作方法
公开(公告)号：US20060002037A1
公开(公告)日：2006-01-05
申请号：US11172861
申请日：2005-07-05
申请人： Vadym Zayets
发明人： Vadym Zayets
IPC分类号： G11B5/127
CPC分类号： G11C19/0808 , G11B13/04 , G11C11/16 , G11C13/06 , G11C19/30
摘要： The present invention relates to a high-speed optical memory element. In order to increase speed of a memory element, optical pulse is recorded and read all-optically without conversion into electrical signal at very high speed. Optically-induced spin accumulation is used for recording the ferromagnetic metal embedded into optical waveguide operates as a high speed memory element. The ferromagnetic metal is sandwiched between a conductor on one side and a tunnel barrier followed by a conductor on the other side. The voltage is applied between two conductors. For data recording, the optically induced spin-polarized tunneling and spin accumulation is used. The optically induced spin-polarized tunneling occurs due to absorption of circularly polarized light. The torque of accumulated spin reverses magnetization of ferromagnetic metal. For reading Faraday rotation or non-reciprocal loss/gain in semiconductor-ferromagnetic-metal hybrid is used.
摘要翻译：本发明涉及一种高速光存储元件。为了提高存储元件的速度，光脉冲被记录并全光读出，而不会以非常高的速度转换成电信号。光诱导的自旋累积用于记录嵌入到光波导中的铁磁金属作为高速存储元件。铁磁金属夹在一侧的导体和隧道屏障之间，之后是另一侧的导体。电压施加在两根导体之间。对于数据记录，使用光诱导的自旋极化隧道和自旋聚集。光诱导的自旋极化隧道由于圆偏振光的吸收而发生。累积自旋的转矩反转铁磁金属的磁化。对于读取法拉第旋转或半导体 - 铁磁金属混合物的不可逆损耗/增益。

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