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81. 发明授权

US08058698B2 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08058698B2
公开(公告)日：2011-11-15
申请号：US12803189
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that is an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer has a low Gilbert damping factor and a very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用转移自旋角动量作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元。该器件包括形成在钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，是非晶形的自由层分别在3和6埃厚度的Fe的两个结晶层之间形成大约20埃厚度的Co60Fe20B20层。自由层具有低的吉尔伯特衰减因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

82. 发明申请

US20110133300A1 Bottom electrode for MRAM device 有权
标题翻译： MRAM器件底电极
公开(公告)号：US20110133300A1
公开(公告)日：2011-06-09
申请号：US12927670
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
摘要翻译：描述了用于氮化硅衬底上的MTJ器件的多层底电极。它包括在钌上的α钽的双层，其又位于第二钽层上的镍铬层上。

83. 发明申请

US20110076785A1 Process to fabricate bottom electrode for MRAM device 有权
标题翻译：制造MRAM器件底电极的工艺
公开(公告)号：US20110076785A1
公开(公告)日：2011-03-31
申请号：US12927615
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
摘要翻译：在氮化硅衬底上形成用于MTJ器件的底部电极通过包括在所述底部电极的α钽部分的蚀刻期间部分消耗的保护涂层来促进。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。

84. 发明申请

US20100178715A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20100178715A1
公开(公告)日：2010-07-15
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

85. 发明授权

US07630176B2 Seed layer for fabricating spin valve heads for ultra-high density recordings 有权
标题翻译：用于制造用于超高密度记录的自旋阀头的种子层
公开(公告)号：US07630176B2
公开(公告)日：2009-12-08
申请号：US11804271
申请日：2007-05-17
申请人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
发明人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
摘要翻译：一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in2的记录介质。此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

86. 发明申请

US20090256220A1 Low switching current MTJ element for ultra-high STT-RAM and a method for making the same 有权
标题翻译：用于超高STT-RAM的低开关电流MTJ元件及其制造方法
公开(公告)号：US20090256220A1
公开(公告)日：2009-10-15
申请号：US12082155
申请日：2008-04-09
申请人： Cheng T. Horng , Ru-Ying Tong , Yimin Guo
发明人： Cheng T. Horng , Ru-Ying Tong , Yimin Guo
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/883
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R is disclosed. The MTJ has a MgO tunnel barrier formed by natural oxidation to achieve a low RA, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0. There is a thin Ru capping layer for a spin scattering effect. The reference layer has a shape anisotropy and Hc substantially greater than that of the free layer to establish a “self-pinned” state. The free layer, capping layer and hard mask are formed in an upper section of a nanopillar that has an area substantially less than a lower pedestal section which includes a bottom electrode, reference layer, seed layer, and tunnel barrier layer. The reference layer is comprised of an enhanced damping constant material that may be an insertion layer, and the free layer has a low damping constant.
摘要翻译：公开了一种在实现高dR / R的同时使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有通过自然氧化形成的MgO隧道势垒以实现低RA，以及具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以使Jc0最小化。有一个薄的Ru覆盖层用于自旋散射效应。参考层具有形状各向异性，并且Hc基本上大于自由层的Hc以形成“自固定”状态。自由层，覆盖层和硬掩模形成在纳米柱的上部，其具有基本上小于包括底部电极，参考层，种子层和隧道势垒层的下基座部分的面积。参考层由增强的阻尼常数材料组成，其可以是插入层，并且自由层具有低阻尼常数。

87. 发明授权

US07536772B2 Method of manufacturing a bottom spin valve with a laminated CoFe free layer 失效
标题翻译：制造具有层叠CoFe自由层的底部自旋阀的方法
公开(公告)号：US07536772B2
公开(公告)日：2009-05-26
申请号：US11269370
申请日：2005-11-08
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/187
CPC分类号： G11B5/3906 , G11B7/0053 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052
摘要： A method is given for the manufacture of a bottom spin valve (BSV) spin filter spin valve (SFSV) type read sensor. The sensor has a composite, ultra-thin (
摘要翻译：给出了制造底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型读取传感器的方法。该传感器具有在两层CoFe之间形成为Cu高电导层（HCL）的复合超薄（<20埃）层压自由层。第二HCL形成为复合自由层上的Ru层。通过调节两个HCL的厚度，自由层将具有低的矫顽力和可调磁致伸缩。该传感器能够读取超过60Gb / in2的密度。

88. 发明申请

US20090108383A1 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
标题翻译：用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US20090108383A1
公开(公告)日：2009-04-30
申请号：US11981127
申请日：2007-10-31
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nmx200 nm椭圆形STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

89. 发明授权

US07480173B2 Spin transfer MRAM device with novel magnetic free layer 有权
标题翻译：具有新颖无磁性层的自旋转移MRAM器件
公开(公告)号：US07480173B2
公开(公告)日：2009-01-20
申请号：US11717347
申请日：2007-03-13
申请人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
发明人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： A CPP MTJ MRAM element utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer comprising a thin layer of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by values of DR/R between approximately 95% and 105%.
摘要翻译： CPP MTJ MRAM元件利用自旋角动量的传递作为改变自由层的磁矩方向的机构。该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用包含被CoFeB层夹在中间的Ta或Hf薄层的新型自由层。该装置的特征在于DR / R的值在大约95％和105％之间。

90. 发明申请

US20080239589A1 Spin transfer MRAM device with novel magnetic synthetic free layer 有权
标题翻译：具有新型磁性合成自由层的自旋转移MRAM器件
公开(公告)号：US20080239589A1
公开(公告)日：2008-10-02
申请号：US11728491
申请日：2007-03-26
申请人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
发明人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F41/302
摘要： We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.
摘要翻译：我们描述了利用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM元件。该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用具有三个铁磁层的新型合成自由层，其在成对配置中相互交换耦合。自由层包括内部铁磁体和两个外部铁磁性层，其中内层被铁磁交换耦合到一个外层并与另一个外层反耦合地进行反铁磁交换。在厚度优选小于0.4nm的Ta，Hf或Zr的超薄层上，铁磁耦合是非常强的。

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