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81. 发明授权

US06444263B1 Method of chemical-vapor deposition of a material 失效
标题翻译：化学气相沉积材料的方法
公开(公告)号：US06444263B1
公开(公告)日：2002-09-03
申请号：US09663209
申请日：2000-09-15
申请人： Ajit P. Paranjpe , Randhir S. Bubber , Sanjay Gopinath , Thomas R. Omstead , Mehrdad M. Moslehi
发明人： Ajit P. Paranjpe , Randhir S. Bubber , Sanjay Gopinath , Thomas R. Omstead , Mehrdad M. Moslehi
IPC分类号： C23C1616
CPC分类号： C23C16/16 , C23C16/0281
摘要： A method for chemical-vapor deposition of a material film adds precursor decomposition by-product to the precursor flow to suppress premature gas-phase precursor decomposition and improve process repeatability and film quality. In one embodiment, CVD cobalt films are deposited with carbonyl precursors with reduced premature gas-phase reaction and particulate generation by the addition of excess carbon monoxide to the process chamber comprising the precursor flow. The addition of carbon monoxide not only suppresses gas-phase reaction but also improves cobalt film purity. The addition of excess carbon monoxide to CVD cobalt precursor flow provides repeatable deposition of glue and nucleation layers to support CVD copper, and is extendable to the deposition of high purity CVD cobalt for other applications and with other precursors, and also extendable for CVD CoSi2 films and other cobalt-containing applications.
摘要翻译：材料膜的化学气相沉积方法将前体分解副产物添加到前体流中以抑制过早气相前体分解，并提高工艺重复性和膜质量。在一个实施方案中，通过在包含前体流的处理室中加入过量的一氧化碳，将CVD钴膜沉积在羰基前体中，同时减少过早的气相反应和颗粒产生。加入一氧化碳不仅抑制了气相反应，而且还提高了钴膜的纯度。过量的一氧化碳添加到CVD钴前体流中提供了可重复沉积的胶和成核层以支持CVD铜，并且可扩展到用于其它应用和其它前体的高纯度CVD钴的沉积，并且还可用于CVD CoSi 2膜和其他含钴应用。

82. 发明授权

US06444103B1 Method and apparatus for thin film deposition using an active shutter 失效
标题翻译：使用主动快门进行薄膜沉积的方法和装置
公开(公告)号：US06444103B1
公开(公告)日：2002-09-03
申请号：US09662575
申请日：2000-09-15
申请人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
IPC分类号： C23C1434
CPC分类号： H01J37/3447 , C23C14/3464 , C23C14/564
摘要： Material is deposited from an active shutter onto a substrate located in a processing chamber housing with a shutter target coupled to a shutter target assembly. A first target assembly located in the housing supports a target for physical-vapor deposition of a first material onto the substrate. A shutter is selectively moveable to extend into a closed or activated position and to retract into an open position. The shutter target assembly is coupled to the shutter such that when the shutter is in the closed position, the shutter target assembly is positioned to allow deposition of material from the shutter target onto the substrate. When the shutter is in the open position, the first target is positioned to deposit material onto the substrate. Alternating layers of materials may be deposited by the shutter target and first target by cycling the shutter between an open position and a closed position.
摘要翻译：材料从活动快门沉积到位于处理室壳体中的基板上，其中快门目标件联接到快门目标组件。位于壳体中的第一目标组件支撑用于将第一材料物理 - 气相沉积到衬底上的靶。快门选择性地可移动以延伸到关闭或启动位置并缩回到打开位置。快门目标组件联接到快门，使得当快门处于关闭位置时，快门目标组件被定位成允许材料从快门目标物体沉积到基板上。当快门处于打开位置时，第一目标定位成将材料沉积到基板上。通过在打开位置和关闭位置之间循环活门，可以通过快门目标和第一目标来沉积材料的交替层。

83. 发明授权

US06376372B1 Approaches for mitigating the narrow poly-line effect in silicide formation 失效
标题翻译：减少硅化物形成中窄线效应的方法
公开(公告)号：US06376372B1
公开(公告)日：2002-04-23
申请号：US08459203
申请日：1995-06-02
申请人： Ajit Pramod Paranjpe , Pushkar Prabhakar Apte , Mehrdad M. Moslehi
发明人： Ajit Pramod Paranjpe , Pushkar Prabhakar Apte , Mehrdad M. Moslehi
IPC分类号： H01L213205
CPC分类号： H01L29/665 , H01L21/28518 , H01L29/66575
摘要： A silicide process using a pre-anneal amorphization implant prior to silicide anneal. A layer of titanium is deposited and reacted to form titanium silicide (32) and titanium nitride. The titanium nitride is removed and a pre-anneal amorphization implant is performed to enable increased transformation of the silicide (32) from a higher resistivity phase to a lower resistivity phase. A heavy dopant species (40) is used for the pre-anneal amorphization implant such as arsenic, antimony, or germanium. After the implant, the silicide anneal is performed to accomplish the transformation. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines.
摘要翻译：在硅化物退火之前使用预退火非晶化注入的硅化物工艺。沉积一层钛并反应形成硅化钛（32）和氮化钛。去除氮化钛，并且执行预退火非晶化注入以使硅化物（32）从较高电阻率相变到较低电阻率相的增加。重掺杂物质（40）用于预退火非晶化植入物，例如砷，锑或锗。在植入之后，执行硅化物退火以完成转变。本发明的一个优点是提供了一种对于窄多晶硅线路具有降低的硅化物薄层电阻的硅化物工艺。

84. 发明授权

US06188044B1 High-performance energy transfer system and method for thermal processing applications 失效
标题翻译：高性能能量转移系统和热处理应用方法
公开(公告)号：US06188044B1
公开(公告)日：2001-02-13
申请号：US09067142
申请日：1998-04-27
申请人： Yong Jin Lee , Mehrdad M. Moslehi , Jalil Kamali , Sergey Belikov
发明人： Yong Jin Lee , Mehrdad M. Moslehi , Jalil Kamali , Sergey Belikov
IPC分类号： F27B514
CPC分类号： H01L21/67115 , C23C16/481
摘要： An apparatus and method supports thermal processing of a microelectronic device such as a semiconductor chip in a substrate by heating the substrate with secondary radiation from an energy transfer device 40, which has a first set of energy transfer regions comprised of an emissive and thermally conductive material, and a second set of thermally insulating regions comprised of a reduced emissivity and reduced thermal conductivity material or free space. A multi-zone radiant energy source 30 provides radiative energy to energy transfer device 40, with a process controller 36, preferably a multi-zone controller, altering the amount of energy provided by each heat zone associated with each emissive region of energy transfer device 40. Sensors detect the thermal energy level of each energy transfer region to allow controller 36 to adjust the secondary radiation emitted by each region in real time, resulting in a predetermined and controlled distribution of thermal energy on substrate 20. Energy transfer device 40 can have plural emissive and thermally conductive concentric rings separated from each other by reduced emissivity and reduced thermal conductivity regions such as free space gaps 42. Alternatively, a solid plate 54 having an emissive coating or emissive surface 52 can have reduced emissivity and reduced conductivity isolation regions such as trenches 56 for defining the multi-zone high-emissivity and high thermal conductivity energy transfer regions.
摘要翻译：一种装置和方法通过用来自能量转移装置40的二次辐射加热衬底来支持诸如半导体芯片之类的微电子器件的热处理，该能量转移装置具有由发射和导热材料组成的第一组能量转移区以及由减少的发射率和降低的热导率材料或自由空间组成的第二组热绝缘区域。多区域辐射能源30向能量传递装置40提供辐射能，其中过程控制器36，优选多区域控制器，改变与能量传递装置40的每个发射区域相关联的每个加热区域提供的能量的量传感器检测每个能量传递区域的热能级别，以允许控制器36实时地调整每个区域发射的次级辐射，从而导致基板20上预定和受控的热能分布。能量传递装置40可以具有多个发射和导热的同心环通过降低的发射率和降低的热导率区域（例如自由空间间隙42）彼此分离。或者，具有发射涂层或发射表面52的固体板54可以具有降低的发射率和降低的电导率隔离区域，例如用于定义多区高发射率和高导热性的沟槽56 ergy转移区域。

85. 发明授权

US6132805A Shutter for thin-film processing equipment 失效
标题翻译：快门用于薄膜加工设备
公开(公告)号：US6132805A
公开(公告)日：2000-10-17
申请号：US175487
申请日：1998-10-20
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： C23C14/22 , H01J37/32 , C23C14/00 , C23C16/50
CPC分类号： H01J37/32642 , C23C14/22
摘要： A shutter assembly located substantially within a thin-film processing chamber includes a plurality of articulatable components that are movable between open and closed positions within the chamber. The articulatable components are preferably arranged in the form of an iris to regulate a size of an opening centered along said central axis. The shutter assembly can be used to isolate transmissions between a process energy source such as a PVD target and a substrate or to limit a range of incidence angles at which the transmissions reach the substrate. The shutter apparatus of this invention does not add any area to the footprint of processing equipment, enables very fast shuttering between open and closed positions, and enables enhanced process control.
摘要翻译：基本上位于薄膜处理室内的快门组件包括可在室内的打开位置和闭合位置之间移动的多个可铰接部件。可铰接部件优选地以虹膜的形式设置，以调节沿着所述中心轴线居中的开口的尺寸。快门组件可用于隔离诸如PVD目标的过程能量源与衬底之间的传输，或限制传输到达衬底的入射角的范围。本发明的快门装置不会对处理设备的占地面积增加任何区域，使得能够在打开和关闭位置之间进行非常快速的快门，并且能够实现增强的过程控制。

86. 发明授权

US6122041A Liquid cooled light pipe assembly for pyrometric temperature measurement 失效
标题翻译：液体冷却光管组件，用于高温测温
公开(公告)号：US6122041A
公开(公告)日：2000-09-19
申请号：US942564
申请日：1997-10-01
申请人： Habib Najm , Mehrdad M. Moslehi
发明人： Habib Najm , Mehrdad M. Moslehi
IPC分类号： G01J5/06 , G01J5/04
CPC分类号： G01J5/061
摘要： A liquid cooled light pipe is disclosed which allows effective pyrometric temperature measurements using a remote detector. Temperature of the light pipe assembly is controlled and maintained at an approximately constant value in order to establish good long-term temperature measurement accuracy. The temperature-controlled light pipe assembly of this invention can be used for multi-point temperature measurements of a heated body with good spatial resolution for real-time multi-zone temperature control applications.
摘要翻译：公开了一种液体冷却的光管，其允许使用远程检测器进行有效的高温测量温度测量。光管组件的温度被控制并保持在近似恒定的值，以便建立良好的长期温度测量精度。本发明的温度控制光管组件可用于具有良好空间分辨率的加热体的多点温度测量，用于实时多区域温度控制应用。

87. 发明授权

US6090690A Direct gas-phase doping of semiconductor wafers using an organic dopant source 失效
标题翻译：使用有机掺杂剂源直接气相掺杂半导体晶片
公开(公告)号：US6090690A
公开(公告)日：2000-07-18
申请号：US847319
申请日：1997-04-23
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： H01L21/223 , H01L21/26
CPC分类号： H01L21/223
摘要： A direct doping method for semiconductor wafers, comprising the steps of providing a semiconductor wafer, exposing the surface of the wafer to a process medium in order to directly dope at least a portion of the surface of the wafer, wherein the process medium comprises a dopant gas, and wherein the dopant gas comprises an organic compound of a dopant species, and heating the wafer, thermally activating the direct doping process and causing solid-state diffusion of the dopant species into the semiconductor wafer surface. The organic source of a dopant species includes the organic compounds comprising boron, arsenic and phosphorous. The wafer is heated in the presence of an organic dopant source, thermally activating the doping process and causing surface chemisorption, surface dissociation, and solid-state diffusion of the dopant species into the wafer surface. The organic dopant source can be used with a germanium-containing additive gas, a halogen-containing compound or a remote plasma energy source.
摘要翻译：一种用于半导体晶片的直接掺杂方法，包括以下步骤：提供半导体晶片，将晶片的表面暴露于工艺介质以便直接掺杂晶片表面的至少一部分，其中所述工艺介质包含掺杂剂气体，并且其中所述掺杂剂气体包括掺杂剂物质的有机化合物，并加热所述晶片，热激活所述直接掺杂工艺并引起所述掺杂剂物质进入所述半导体晶片表面的固态扩散。掺杂剂物质的有机源包括含有硼，砷和磷的有机化合物。在有机掺杂剂源的存在下加热晶片，热激活掺杂过程并引起掺杂剂物质进入晶片表面的表面化学吸附，表面解离和固态扩散。有机掺杂剂源可以与含锗的添加气体，含卤素化合物或远程等离子体能源一起使用。

88. 发明授权

US6073576A Substrate edge seal and clamp for low-pressure processing equipment 失效
标题翻译：用于低压加工设备的基板边缘密封和夹具
公开(公告)号：US6073576A
公开(公告)日：2000-06-13
申请号：US977822
申请日：1997-11-25
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： C23C14/50 , C23C16/458 , C23C16/00
CPC分类号： C23C14/50 , C23C16/4585 , Y10S414/136 , Y10S414/14 , Y10S414/141 , Y10T279/35
摘要： A low-pressure processor for processing substrates includes a chuck that engages the substrates' peripheries for purposes of clamping, sealing, and centering the substrates on chuck bodies. For accomplishing all three purposes, a mechanical clamp can be arranged with two sealing regions. One of the sealing regions seals the clamp to a chuck body or an extension of the chuck body, and another of the sealing regions engages a peripheral edge surface of a substrate for sealing the clamp to the substrate. The second sealing region includes an inclined seating surface that engages a front edge of the substrate's peripheral edge surface and divides a clamping force into a first component that presses the substrate against the chuck body and a second component that centers the substrate on the chuck body. The peripheral engagement of the substrate exposes substantially the entire front surface of the substrate to processing and exposes substantially the entire back surface of the substrate to a heat-transfer gas for enhancing thermal transfers between the substrate and the temperature-regulated chuck body.
摘要翻译：用于处理基板的低压处理器包括与基板周边接合的卡盘，用于夹紧，密封和将基板对准在卡盘体上。为了实现所有这三个目的，机械夹具可以布置有两个密封区域。一个密封区域将夹具密封到卡盘主体或卡盘主体的延伸部分，另一个密封区域与基板的周边边缘表面接合，以将夹具密封到基板。第二密封区域包括倾斜的就座表面，其与衬底的周边边缘表面的前边缘接合并且将夹紧力分成第一部件，该第一部件将衬底压靠在卡盘主体上;以及第二部件，其将衬底定位在卡盘主体上。衬底的周边接合基本上暴露了衬底的整个前表面，从而基本上将衬底的整个后表面基本上暴露于传热气体，以增强衬底和温度调节卡盘体之间的热传递。

89. 发明授权

US6039848A Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. 失效
标题翻译：超高真空装置和高生产率物理气相沉积方法。
公开(公告)号：US6039848A
公开(公告)日：2000-03-21
申请号：US958877
申请日：1997-10-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
IPC分类号： C23C14/35 , C23C14/56 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/564
摘要： A magnetron sputtering system is provided that uses a backing plate assembly having an insulating spacer ring coupled between and hermetically sealed to the backing plate and an extender ring. The insulating spacer ring can be constructed from a ceramic material, and the extender ring can be constructed from a metal material. The use of this backing plate assembly allows the backing plate assembly to be coupled directly to the chamber walls with a metal-to-metal contact, while the backing plate remains electrically isolated from the chamber walls. This allows the sealing of a vacuum chamber in the magnetron sputtering system using a seal suitable for creating an ultra-high vacuum in the vacuum chamber.
摘要翻译：提供了一种磁控溅射系统，其使用背板组件，该背板组件具有联接在背衬板和延伸环之间并与气垫密封的绝缘间隔环。绝缘间隔环可以由陶瓷材料构成，并且增量环可以由金属材料构成。使用该背板组件允许背板组件通过金属对金属接触直接耦合到室壁，而背板保持与室壁电隔离。这允许使用适于在真空室中产生超高真空的密封来密封磁控溅射系统中的真空室。

90. 发明授权

US6004029A Method for automated calibration of temperature sensors in rapid thermal processing equipment 失效
标题翻译：快速热处理设备中温度传感器的自动校准方法
公开(公告)号：US6004029A
公开(公告)日：1999-12-21
申请号：US680244
申请日：1996-07-10
申请人： Mehrdad M. Moslehi , Yong Jin Lee
发明人： Mehrdad M. Moslehi , Yong Jin Lee
IPC分类号： G01J5/10 , G01J5/52 , G01K1/14 , G01K15/00 , F27D11/00 , H01L21/02
CPC分类号： G01K1/146 , G01J5/10 , G01J5/522 , G01K15/00
摘要： This invention presents an automatic calibration system and method for calibration of a substrate temperature sensor in a thermal processing equipment, such as a rapid thermal processing system. The calibration system includes a temperature-sensitive probe associated with the substrate temperature sensor to calibrate the substrate temperature sensor and an actuator to position the temperature-sensitive probe relative to the substrate during a calibration cycle. The actuator and temperature-sensitive probe of the automatic calibration system can be incorporated into the thermal processing equipment in order to maintain the thermal processing equipment cleanliness and integrity during a calibration cycle, and to allow rapid automated calibration. In the preferred embodiment of this invention, the temperature-sensitive probe and its actuator are implemented in the gas showerhead assembly of a rapid thermal processing system.
摘要翻译：本发明提出了一种用于在诸如快速热处理系统的热处理设备中校准衬底温度传感器的自动校准系统和方法。校准系统包括与衬底温度传感器相关联的温度敏感探针以校准衬底温度传感器，以及在校准周期期间相对于衬底定位温度敏感探针的致动器。自动校准系统的致动器和温度敏感探头可以并入热处理设备，以便在校准周期内保持热处理设备的清洁度和完整性，并允许快速自动校准。在本发明的优选实施例中，温度敏感探针及其致动器被实现在快速热处理系统的气体喷头组件中。

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