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1. 发明授权

US6034356A RTP lamp design for oxidation and annealing 失效
标题翻译： RTP灯设计用于氧化和退火
公开(公告)号：US6034356A
公开(公告)日：2000-03-07
申请号：US7164
申请日：1998-01-14
申请人： Ajit Pramod Paranjpe
发明人： Ajit Pramod Paranjpe
IPC分类号： C23C16/48 , C30B31/12 , F27B5/14
CPC分类号： C23C16/481 , C30B31/12
摘要： A RTP system and method. A first lamp zone (108) is located around a periphery of a wafer (102) for heating the center of the wafer (102) and a second lamp zone (114) is located around the periphery of the wafer (102) for heating the edge of the wafer (102). The chamber (104) includes highly reflective surfaces (106). Light from the first and second lamp zones (108, 114) is reflected off of the highly reflective surfaces (106) at least three time before reaching the wafer (102). Thus, the wafer (102) is isotropically heated and uniform wafer heating is achieved.
摘要翻译： RTP系统和方法。第一灯区（108）位于用于加热晶片（102）的中心的晶片（102）的周边周围，并且第二灯区（114）位于晶片（102）的周边周围，用于加热晶片晶片（102）的边缘。腔室（104）包括高反射表面（106）。来自第一和第二灯区（108,114）的光在到达晶片（102）之前至少三次被从高反射表面（106）反射。因此，晶片（102）被各向同性地加热并且实现了均匀的晶片加热。

2. 发明授权

US06376372B1 Approaches for mitigating the narrow poly-line effect in silicide formation 失效
标题翻译：减少硅化物形成中窄线效应的方法
公开(公告)号：US06376372B1
公开(公告)日：2002-04-23
申请号：US08459203
申请日：1995-06-02
申请人： Ajit Pramod Paranjpe , Pushkar Prabhakar Apte , Mehrdad M. Moslehi
发明人： Ajit Pramod Paranjpe , Pushkar Prabhakar Apte , Mehrdad M. Moslehi
IPC分类号： H01L213205
CPC分类号： H01L29/665 , H01L21/28518 , H01L29/66575
摘要： A silicide process using a pre-anneal amorphization implant prior to silicide anneal. A layer of titanium is deposited and reacted to form titanium silicide (32) and titanium nitride. The titanium nitride is removed and a pre-anneal amorphization implant is performed to enable increased transformation of the silicide (32) from a higher resistivity phase to a lower resistivity phase. A heavy dopant species (40) is used for the pre-anneal amorphization implant such as arsenic, antimony, or germanium. After the implant, the silicide anneal is performed to accomplish the transformation. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines.
摘要翻译：在硅化物退火之前使用预退火非晶化注入的硅化物工艺。沉积一层钛并反应形成硅化钛（32）和氮化钛。去除氮化钛，并且执行预退火非晶化注入以使硅化物（32）从较高电阻率相变到较低电阻率相的增加。重掺杂物质（40）用于预退火非晶化植入物，例如砷，锑或锗。在植入之后，执行硅化物退火以完成转变。本发明的一个优点是提供了一种对于窄多晶硅线路具有降低的硅化物薄层电阻的硅化物工艺。

3. 发明授权

US5762713A RTP lamp design for oxidation and annealing 失效
公开(公告)号：US5762713A
公开(公告)日：1998-06-09
申请号：US756632
申请日：1996-11-26
申请人： Ajit Pramod Paranjpe
发明人： Ajit Pramod Paranjpe
IPC分类号： C23C16/48 , C30B31/12 , C23L16/00
CPC分类号： C23C16/481 , C30B31/12
摘要： A RTP system and method. A first lamp zone (108) is located around a periphery of a wafer (102) for heating the center of the wafer (102) and a second lamp zone (114) is located around the periphery of the wafer (102) for heating the edge of the wafer (102). The chamber (104) includes highly reflective surfaces (106). Light from the first and second lamp zones (108, 114) is reflected off of the highly reflective surfaces (106) at least three time before reaching the wafer (102). Thus, the wafer (102) is isotropically heated and uniform wafer heating is achieved.

4. 发明授权

US5760573A Plasma density monitor and method 失效
标题翻译：等离子体密度监测仪和方法
公开(公告)号：US5760573A
公开(公告)日：1998-06-02
申请号：US485203
申请日：1995-06-07
申请人： Ajit Pramod Paranjpe , Steve Show-Wu Huang
发明人： Ajit Pramod Paranjpe , Steve Show-Wu Huang
IPC分类号： G01N27/64 , G01N27/66 , G01R19/00 , G10N27/00 , G01R33/00
CPC分类号： G01N27/64 , G01N27/66 , G01R19/0061
摘要： A plasma density monitor is described for determining the ion current of a plasma flowing through a conduit (14). The monitor comprises a plate (18) having a face and an orifice extending from the face through the plate. The internal surface of the orifice conforms with the internal surface of the conduit when the face is adjacent the conduit. The monitor also comprises a detector circuit (22) for sensing the ion current collected by the internal surface of the plate (18). Another embodiment monitors plasma density by determining electrical conductivity in the afterglow of a microwave induced plasma. A resonant LC circuit (50, C3) has a multi-turn coil (C3) surrounding the conduit, an RF oscillator circuit (54, 56) for driving the LC circuit, and a circuit (64, 66, 68, 70, 72, 76) for measuring the decay time of the LC circuit. Plasma flowing through the conduit alters the resistivity of the coil and the time constant of the LC circuit proportional to the electrical conductivity of the flowing plasma.
摘要翻译：描述了等离子体密度监测器，用于确定流过导管（14）的等离子体的离子电流。显示器包括具有面的板（18）和从表面延伸穿过板的孔。当面与导管相邻时，孔的内表面与导管的内表面一致。监视器还包括用于感测由板（18）的内表面收集的离子电流的检测器电路（22）。另一个实施例通过确定微波感应等离子体的余辉中的电导率来监测等离子体密度。谐振LC电路（50，C3）具有围绕导管的多匝线圈（C3），用于驱动LC电路的RF振荡器电路（54,56）和电路（64,66,68,70,72 ，76）用于测量LC电路的衰减时间。流过导管的等离子体会改变线圈的电阻率和LC电路的时间常数与流动等离子体的电导率成比例。

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