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81. 发明授权

US08288020B2 Piezoelectric thin film and method of manufacturing the same, ink jet head, method of forming image with the ink jet head, angular velocity sensor, method of measuring angular velocity with the angular velocity sensor, piezoelectric generating element, and method of generating electric power with the piezoelectric generating element 有权
标题翻译：压电薄膜及其制造方法，喷墨头，用喷墨头形成图像的方法，角速度传感器，角速度传感器测量角速度的方法，压电发生元件，以及用于产生电力的方法压电发生元件
公开(公告)号：US08288020B2
公开(公告)日：2012-10-16
申请号：US12956772
申请日：2010-11-30
申请人： Takakiyo Harigai , Hideaki Adachi , Eiji Fujii
发明人： Takakiyo Harigai , Hideaki Adachi , Eiji Fujii
IPC分类号： H01L41/18 , H01L41/047 , H01L41/113 , B41J2/045 , G01C19/56 , B32B9/04 , C23C14/08
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2002/14258 , G01C19/5628 , H01L41/0478 , H01L41/0815 , H01L41/1136 , H01L41/187 , H01L41/316 , H01L41/319
摘要： Provided are a piezoelectric thin film including a lead-free ferroelectric material and exhibiting high piezoelectric performance comparable to that of lead zirconate titanate (PZT), and a method of manufacturing the piezoelectric thin film. The piezoelectric thin film of the present invention comprises: a LaNiO3 film having a (001) orientation; a NaNbO3 film having a (001) orientation; and a (Bi, Na, Ba) TiO3 film having a (001) orientation. The LaNiO3 film, the NaNbO3 film, and the (Bi, Na, Ba)TiO3 film are laminated in this order.
摘要翻译：提供了一种包括无铅铁电材料并表现出与锆钛酸铅（PZT）相当的高压电性能的压电薄膜，以及制造压电薄膜的方法。本发明的压电薄膜包括：具有（001）取向的LaNiO3膜; 具有（001）取向的NaNbO 3膜; 和具有（001）取向的（Bi，Na，Ba）TiO 3膜。依次层叠LaNiO3膜，NaNbO3膜，（Bi，Na，Ba）TiO3膜。

82. 发明授权

US08193548B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08193548B2
公开(公告)日：2012-06-05
申请号：US13284294
申请日：2011-10-28
申请人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083 , H01L2933/0091
摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.
摘要翻译：发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极订购。 n侧电极与n型氮化物半导体层电连接。窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

83. 发明申请

US20110299566A1 PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR 有权
标题翻译：光伏温度传感器和用于测量温度传感器的方法
公开(公告)号：US20110299566A1
公开(公告)日：2011-12-08
申请号：US13207940
申请日：2011-08-11
申请人： Michihito Ueda , Hiroyuki Tanaka , Yukihiro Kaneko , Eiji Fujii
发明人： Michihito Ueda , Hiroyuki Tanaka , Yukihiro Kaneko , Eiji Fujii
IPC分类号： G01K7/36
CPC分类号： H01L37/02 , G01K7/36
摘要： A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.
摘要翻译：温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。第二上电极在平面图中插入在第一上电极和第三上电极之间。半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

84. 发明申请

US20110175012A1 PIEZOELECTRIC THIN FILM, INK JET HEAD, METHOD FOR FORMING IMAGE WITH THE INK JET HEAD, ANGULAR VELOCITY SENSOR, METHOD FOR MEASURING ANGULAR VELOCITY WITH THE ANGULAR VELOCITY SENSOR, PIEZOELECTRIC GENERATING ELEMENT AND METHOD FOR GENERATING ELECTRIC POWER WITH THE PIEZOELECTRIC GENERATING ELEMENT 有权
标题翻译：压电薄膜，喷墨头，用喷墨头形成图像的方法，角速度传感器，用角速度传感器测量角速度的方法，压电发生元件和用压电产生元件产生电力的方法
公开(公告)号：US20110175012A1
公开(公告)日：2011-07-21
申请号：US13076068
申请日：2011-03-30
申请人： Takakiyo HARIGAI , Hideaki Adachi , Eiji Fujii
发明人： Takakiyo HARIGAI , Hideaki Adachi , Eiji Fujii
IPC分类号： H01L41/18 , B41J2/045 , G01C19/56 , H02N2/18
CPC分类号： B41J2/14233 , G01C19/5628 , H01L41/0973 , H01L41/1873 , H01L41/1878 , H01L41/316 , H01L41/319 , H01L41/332
摘要： Provided is a lead-free piezoelectric thin film containing a lead-free ferroelectric material and having low dielectric loss, high electromechanical coupling coefficient and high piezoelectric constant comparable to that of lead zirconate titanate (PZT). The piezoelectric thin film of the present invention has a (Bi, Na, Ba)TiO3 film composed of a perovskite composite oxide (Bi, Na, Ba)TiO3. The (Bi, Na, Ba)TiO3 film has (001) orientation and further contains Ag. The (Bi, Na, Ba)TiO3 film has a mole ratio of Ag to Ti of at least 0.001 but not more than 0.01.
摘要翻译：提供了一种含有无铅铁电材料的无铅压电薄膜，具有低的介电损耗，高机电耦合系数和与锆钛酸铅（PZT）相当的高压电常数。本发明的压电薄膜具有由钙钛矿复合氧化物（Bi，Na，Ba）TiO 3构成的（Bi，Na，Ba）TiO 3膜。（Bi，Na，Ba）TiO 3膜具有（001）取向并且还含有Ag。（Bi，Na，Ba）TiO 3膜的Ag与Ti的摩尔比至少为0.001，但不大于0.01。

85. 发明授权

US07965021B2 Piezoelectric thin film and method of manufacturing the same, ink jet head, method of forming image with the ink jet head, angular velocity sensor, method of measuring angular velocity with the angular velocity sensor, piezoelectric generating element, and method of generating electric power with the piezoelectric generating element 有权
标题翻译：压电薄膜及其制造方法，喷墨头，用喷墨头形成图像的方法，角速度传感器，角速度传感器测量角速度的方法，压电发生元件，以及用于产生电力的方法压电发生元件
公开(公告)号：US07965021B2
公开(公告)日：2011-06-21
申请号：US12844582
申请日：2010-07-27
申请人： Takakiyo Harigai , Hideaki Adachi , Eiji Fujii
发明人： Takakiyo Harigai , Hideaki Adachi , Eiji Fujii
IPC分类号： H01L41/187
CPC分类号： B41J2/14233 , B41J2202/03 , C23C14/024 , C23C14/08 , G01C19/5628 , H01L41/094 , H01L41/316 , H01L41/318 , H01L41/319 , Y10T29/42
摘要： Provided are a piezoelectric thin film including a lead-free ferroelectric material and exhibiting high piezoelectric performance comparable to that of lead zirconate titanate (PZT), and a method of manufacturing the piezoelectric thin film. The piezoelectric thin film of the present invention includes: a LaNiO3 film having a (001) orientation; an interface layer having a (001) orientation and composed of a compound represented by a chemical formula ABO3 (where A is represented by (Bi,Na)1-xCx (0≦x≦1), B is Ti or TiZr, and C is an alkali metal other than Na); and a (Bi,Na,Ba)TiO3 film having a (001) orientation. The LaNiO3 film, the interface layer, and the (Bi,Na,Ba)TiO3 film are laminated in this order.
摘要翻译：提供了一种包括无铅铁电材料并表现出与锆钛酸铅（PZT）相当的高压电性能的压电薄膜，以及制造压电薄膜的方法。本发明的压电薄膜包括：具有（001）取向的LaNiO3膜; 具有（001）取向并由化学式ABO3表示的化合物（其中A由（Bi，Na）1-xC x（0＆nlE; x＆nlE; 1）表示），B为Ti或TiZr，以及C 是Na以外的碱金属）; 和具有（001）取向的（Bi，Na，Ba）TiO 3膜。 LaNiO 3膜，界面层和（Bi，Na，Ba）TiO 3膜依次层叠。

86. 发明授权

US07837305B2 Piezoelectric element, ink jet head, and ink jet recording device 有权
标题翻译：压电元件，喷墨头和喷墨记录装置
公开(公告)号：US07837305B2
公开(公告)日：2010-11-23
申请号：US12021373
申请日：2008-01-29
申请人： Shintarou Hara , Osamu Watanabe , Kazumi Sadamatsu , Hideaki Horio , Eiji Fujii
发明人： Shintarou Hara , Osamu Watanabe , Kazumi Sadamatsu , Hideaki Horio , Eiji Fujii
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1635 , B41J2/1642 , B41J2/1643 , B41J2/1645 , B41J2/1646 , B41J2202/11 , H01L41/0475 , H01L41/0973
摘要： A piezoelectric element includes a pressure chamber member that has an opening communicating with a nozzle, a vibrating plate that is disposed on the pressure chamber member so as to cover the opening, a lower electrode that is disposed on the vibrating plate, a piezoelectric body that is disposed on the lower electrode, an upper electrode that is disposed on the piezoelectric body and in a region opposed to the opening, and a lead electrode that is disposed on the piezoelectric body, that extends from the upper electrode, and that has a width smaller than that of the upper electrode. The piezoelectric body includes a groove portion that is disposed in a predetermined region along an edge portion of the opening and an inactive region (piezoelectric inactive region) that is a region other than the groove portion, that is disposed along the edge portion of the opening, and that does not substantially serve as a piezoelectric element. The lead electrode is disposed in the piezoelectric inactive region.
摘要翻译：压电元件包括具有与喷嘴连通的开口的压力室构件，设置在压力室构件上以覆盖开口的振动板，设置在振动板上的下电极，压电体，设置在下电极上，上电极设置在压电体上并且与开口相对的区域中，以及引线电极，其设置在压电体上，其从上电极延伸，并且具有宽度小于上电极。压电体包括沿着开口的边缘部分布置在预定区域中的凹槽部分和沿着开口的边缘部分设置的除了凹槽部分之外的区域的非活动区域（压电非活性区域），并且基本上不用作压电元件。引线电极设置在压电无源区域中。

87. 发明授权

US07132709B2 Semiconductor device including a capacitor having a capacitive insulating film of an insulating metal oxide 失效
标题翻译：包括具有绝缘金属氧化物的电容绝缘膜的电容器的半导体装置
公开(公告)号：US07132709B2
公开(公告)日：2006-11-07
申请号：US10149389
申请日：2001-11-02
申请人： Yoshihisa Nagano , Toyoji Ito , Sadayuki Imanishi , Eiji Fujii
发明人： Yoshihisa Nagano , Toyoji Ito , Sadayuki Imanishi , Eiji Fujii
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/11502 , H01L21/76832 , H01L21/76834 , H01L27/11507 , H01L28/55
摘要： A capacitor 11 made up of a lower electrode 8, a capacitive insulating film 9 of an insulating metal oxide and an upper electrode 10 is formed over a semiconductor substrate 1. A first-layer wire 14 is formed on a passivation film 12 that covers the capacitor 11. A first interlevel dielectric film 15 is deposited to cover the first-layer wire 14. A second interlevel dielectric film 17 is deposited over the first interlevel dielectric film 15 with a barrier film 16, which overlaps the capacitor 11 for preventing hydrogen from diffusing, interposed therebetween. A second-layer wire 19 is formed on the second interlevel dielectric film 17. The first interlevel dielectric film 15 has a hydrogen content lower than that of the second interlevel dielectric film 17.
摘要翻译：在半导体衬底1上形成由下电极8，绝缘金属氧化物的电容绝缘膜9和上电极10组成的电容器11.第一层布线14形成在钝化膜12上，电容器11.沉积第一层间绝缘膜15以覆盖第一层布线14.第二层间电介质膜17在第一层间绝缘膜15上沉积有阻挡膜16，阻挡膜16与电容器11重叠以防止氢扩散。在第二层间电介质膜17上形成第二层布线19.第一层间绝缘膜15的氢含量低于第二层间电介质膜17的氢含量。

88. 发明授权

US06943398B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US06943398B2
公开(公告)日：2005-09-13
申请号：US10705984
申请日：2003-11-13
申请人： Toyoji Ito , Eiji Fujii , Kazuo Umeda
发明人： Toyoji Ito , Eiji Fujii , Kazuo Umeda
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/105 , H01L27/10852 , H01L27/10894 , H01L27/11507 , H01L27/11509 , H01L28/55 , H01L28/57 , H01L28/65
摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

89. 发明申请

US20050101085A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050101085A1
公开(公告)日：2005-05-12
申请号：US10999977
申请日：2004-12-01
申请人： Toyoji Ito , Eiji Fujii
发明人： Toyoji Ito , Eiji Fujii
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A semiconductor device includes: a conductive plug formed through an insulating film; a conductive oxygen barrier film formed on the insulating film so as to be electrically connected to the conductive plug and to cover the conductive plug; a lower electrode formed on the oxygen barrier film and connected to the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film. The capacitive insulating film has a bent portion that extends along the direction in which the conductive plug penetrates through the insulating film.
摘要翻译：半导体器件包括：通过绝缘膜形成的导电插塞; 形成在所述绝缘膜上的导电氧阻隔膜，以电连接到所述导电插塞并覆盖所述导电插塞; 形成在氧阻隔膜上并与氧阻隔膜连接的下电极; 形成在下电极上的电容绝缘膜，跟随下电极; 以及形成在电容绝缘膜上的上电极，跟随电容绝缘膜。电容绝缘膜具有沿着导电插塞穿过绝缘膜的方向延伸的弯曲部分。

90. 发明授权

US06174822B1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06174822B1
公开(公告)日：2001-01-16
申请号：US09175250
申请日：1998-10-20
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L2131
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
摘要翻译：半导体器件包括：设置在其上具有集成电路的支撑衬底上并包括下电极，电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜，并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。

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