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81. 发明授权

US4594446A 2-alkoxyimino-3,3-dialkoxy-butyrates and derivatives 失效
标题翻译： 2-烷氧基亚氨基-3,3-二烷氧基 - 丁酸酯及其衍生物
公开(公告)号：US4594446A
公开(公告)日：1986-06-10
申请号：US690989
申请日：1985-01-14
申请人： Ikuo Ueda , Takao Takaya , Masakazu Kobayashi , Takashi Masugi , Hisashi Takasugi , Hiromu Kochi , Tadashi Kitaguchi
发明人： Ikuo Ueda , Takao Takaya , Masakazu Kobayashi , Takashi Masugi , Hisashi Takasugi , Hiromu Kochi , Tadashi Kitaguchi
IPC分类号： C07D317/30 , C07D319/06 , C07D501/04 , C07D501/14 , C07D501/20 , C07C131/00 , C07D317/14 , C07D321/00 , C07F7/04
CPC分类号： C07D317/30 , C07D319/06
摘要： The invention relates to new antimicrobially active 3-cephem compounds, processes for preparing such compounds, new intermediate compounds comprising alkoxyimino dioxy butyric acid derivatives useful in said processes, and processes for preparation of said intermediates.

82. 发明授权

US4327093A 3,7-Disubstituted-2 or 3-cephem-4-carboxylic acid compounds 失效
标题翻译： 3,7-二取代-2或3-头孢烯-4-羧酸化合物
公开(公告)号：US4327093A
公开(公告)日：1982-04-27
申请号：US85684
申请日：1979-10-17
申请人： Ikuo Ueda , Masakazu Kobayashi , Hisashi Yamada , Hiroki Ono
发明人： Ikuo Ueda , Masakazu Kobayashi , Hisashi Yamada , Hiroki Ono
IPC分类号： A61K31/545 , A61K31/546 , A61P31/04 , C07D501/14 , C07D501/18 , C07D501/20 , C07D501/26 , C07D501/28 , C07D501/30 , C07D501/34 , C07D501/38 , C07D501/60
CPC分类号： C07D501/14
摘要： 3,7-Disubstituted-2 or 3-cephem-4-carboxylic acid compounds of the formula: ##STR1## wherein R.sup.1 is acylamino or ar(lower)alkylamino; R.sup.2 is carboxy or carboxy protected by a pharmaceutically acceptable group; --N--R.sup.3, R.sup.4 is di(lower)alkylamino(lower)alkylamino, an unsaturated or saturated 3 to 8 membered heteromonocyclic (lower)alkylamino group containing 1 to 4 nitrogen atoms, an unsaturated or saturated 3 to 8 membered heteromonocyclic (lower)alkylamino group containing 1 to 4 nitrogen atoms substituted by lower alkyl or hydroxy(lower) alkyl, an unsaturated or saturated 5 to 6 membered heteromonocyclic group containing 2 to 4 nitrogen atoms, an unsaturated or saturated 5 to 6 membered heteromonocyclic group containing 2 to 4 nitrogen atoms substituted by lower alkyl or hydroxy(lower)alkyl or hydroxypiperidino, and X is --S-- or ##STR2## and pharmaceutically acceptable salts thereof. The present compounds are useful for the treatment of infectious diseases in animals and human beings.
摘要翻译： 3,7-二取代的2-或3-头孢烯-4-羧酸化合物，其结构式如下：其中R 1是酰氨基或芳（低级）烷基氨基; R2是被药学上可接受的基团保护的羧基或羧基; -N-R3，R4是二（低级）烷基氨基（低级）烷基氨基，含有1-4个氮原子的不饱和或饱和的3至8元杂单环（低级）烷基氨基，不饱和或饱和的3至8元杂单环（低级）由低级烷基或羟基（低级）烷基取代的含有1至4个氮原子的烷基氨基，含2-4个氮原子的不饱和或饱和5至6元杂单环基团，含有2至4个不饱和或饱和的5至6元杂单环基团被低级烷基或羟基（低级）烷基或羟基哌啶子基取代的氮原子，X是-S-或其药学上可接受的盐。本发明化合物可用于治疗动物和人类的感染性疾病。

83. 发明授权

US09534145B2 Method for forming dense silicic film 有权
标题翻译：形成致密硅膜的方法
公开(公告)号：US09534145B2
公开(公告)日：2017-01-03
申请号：US14430740
申请日：2013-10-09
申请人： Yuki Ozaki , Takaaki Sakurai , Masakazu Kobayashi
发明人： Yuki Ozaki , Takaaki Sakurai , Masakazu Kobayashi
IPC分类号： B05D3/06 , C09D183/16 , C08J7/04 , C08J7/12 , C23C18/12 , C23C18/14 , C01B21/068 , C08J7/00
CPC分类号： C09D183/16 , B05D3/067 , C01B21/068 , C08J7/00 , C08J7/047 , C08J7/123 , C08J2483/16 , C23C18/122 , C23C18/1233 , C23C18/1241 , C23C18/1245 , C23C18/14
摘要： The present invention provides a dense silicic film and a producing method thereof. This method comprises coating a composition for coating film, which comprises a polymer having a silazane bond on a substrate, on a substrate, irradiating with light having a maximal peak in the range of 160-179 nm wavelength, and then irradiating with light having 10-70 nm wavelength longer maximal peak wavelength than the light used in the previous irradiation.
摘要翻译：本发明提供致密的硅膜及其制造方法。该方法包括在衬底上涂布包含在衬底上具有硅氮烷键的聚合物的涂膜组合物，用160-179nm波长的最大峰的光照射，然后用10 -70nm波长比最初的照射中使用的光更长的最大峰值波长。

84. 发明申请

US20140091325A1 SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE 有权
标题翻译： SiC单晶，其制造方法，SiC波导和半导体器件
公开(公告)号：US20140091325A1
公开(公告)日：2014-04-03
申请号：US14119710
申请日：2012-06-04
申请人： Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Masanori Yamada , Ayumu Adachi , Masakazu Kobayashi
发明人： Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Masanori Yamada , Ayumu Adachi , Masakazu Kobayashi
IPC分类号： C30B23/02 , C30B29/36 , H01L29/16
CPC分类号： C30B23/025 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/02609 , H01L29/1608 , Y10T428/21
摘要： When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area (S2) of the growth plane is maintained at 20% or less.
摘要翻译：当通过重复a面生长产生具有{0001}面大直径的SiC单晶时，进行SiC单晶的a面生长，使得Sfacet（= S1×100 / S2）的Si平面侧面面积（S1）与生长面的总面积（S2）保持在20％以下。

85. 发明申请

US20120089548A1 METHOD FOR SUPPORTING MIGRATION DESTINATION DECISION AND MANAGEMENT SYSTEM 失效
标题翻译：支持移民目的地决策和管理制度的方法
公开(公告)号：US20120089548A1
公开(公告)日：2012-04-12
申请号：US13001725
申请日：2010-10-07
申请人： Masakazu Kobayashi , Tatsundo Aoshima , Yasufumi Uchiyama
发明人： Masakazu Kobayashi , Tatsundo Aoshima , Yasufumi Uchiyama
IPC分类号： G06N5/02
CPC分类号： G06F3/0689 , G06F3/0605 , G06F3/0647
摘要： Each time data is migrated, a management system stores information denoting a migration history related to the migration of the data, in history management information. The management system receives an input of an administrator-desired attribute condition combination for a migration-destination storage device, identifies all device attribute combinations conforming to this attribute condition combination, and calculates multiple migration trends based on each device attribute combination and the history management information. The management system identifies, from among the multiple migration trends, a migration trend to which a specified migration-source storage device belongs, and displays information denoting at least this identified migration trend.
摘要翻译：每次迁移数据时，管理系统将表示与数据的迁移有关的迁移历史的信息存储在历史管理信息中。管理系统接收用于迁移目的地存储设备的管理员期望的属性条件组合的输入，识别符合该属性条件组合的所有设备属性组合，并且基于每个设备属性组合和历史管理信息来计算多个迁移趋势。管理系统从多个迁移趋势中确定指定的迁移源存储设备所属的迁移趋势，并显示表示至少指定的迁移趋势的信息。

86. 发明申请

US20110267035A1 CURRENT DETECTOR AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：电流检测器及其制造方法
公开(公告)号：US20110267035A1
公开(公告)日：2011-11-03
申请号：US13094681
申请日：2011-04-26
申请人： Naota Kamiyama , Masakazu Kobayashi
发明人： Naota Kamiyama , Masakazu Kobayashi
IPC分类号： G01R15/18 , H01F7/06
CPC分类号： G01R15/185 , G01R15/20 , H01F38/28 , Y10T29/49071
摘要： The invention relates to a current detector using a magnetic balance system and method of manufacturing same. A plurality of taps N, N−1, N−2, N+1, and N+2 are connected to the output side of the secondary coil, and provided on the winding side of a secondary coil in winding device including a bobbin 120 and PCB 130 at prescribed intervals. The taps respectively correspond to different numbers of turns. Connector sections 200N, 200N−1, 200N−2, 200N+1, and 200N+2 as a tap switching devise is provided. When the tap N is selected to be used, and the connector sections 200N−1, 200N−2, 200N+1, and 200N+2 corresponding to the other taps N−1, N−2, N+1, and N+2 are cut by laser-trimming and electrically disconnected, thereby altering the number of turns of the secondary coil and adjusting the accuracy. Further minute accuracy adjustment is performed by cutting a trimming resistance 203N common to all the taps by laser-trimming.
摘要翻译：本发明涉及使用磁平衡系统的电流检测器及其制造方法。多个抽头N，N-1，N-2，N + 1和N + 2连接到次级线圈的输出侧，并且设置在包括线轴120的绕线装置中的次级线圈的绕组侧和PCB 130。水龙头分别对应不同的匝数。提供了作为抽头开关装置的连接器部分200N，200N-1,200N-2,200N + 1和200N + 2。当选择使用抽头N时，对应于另一个抽头N-1，N-2，N + 1和N + 1的连接器部分200N-1,200N-2,200N + 1和200N + 2通过激光切割切断并电断开，从而改变次级线圈的匝数并调整精度。通过切割通过激光修整对所有抽头共同的微调电阻203N进行微小的精度调整。

87. 发明申请

US20100243538A1 Purifier 有权
标题翻译：净化器
公开(公告)号：US20100243538A1
公开(公告)日：2010-09-30
申请号：US12662090
申请日：2010-03-30
申请人： Shigeki Uebayashi , Masakazu Kobayashi , Takuji Nakano
发明人： Shigeki Uebayashi , Masakazu Kobayashi , Takuji Nakano
IPC分类号： B07B9/00
CPC分类号： B07B1/46 , B02B1/02 , B07B1/34 , B07B1/4645 , B07B4/08 , B07B13/16
摘要： A purifier is provided that is capable of uniformly sucking powder in a width direction of the sieve layers even when the purifier is configured to be provided with an air distribution chamber formed as being tapered upward and to have a horizontal cyclone provided above the air distribution chamber.The air distribution chamber is configured of paired inclined surfaces formed as being tapered upward, has a suction passage formed as a horizontal cyclone placed above the air distribution chamber. Also, a plurality of barrier walls are provided in the air distribution chamber in a direction perpendicular to a longitudinal direction of sieve layers, the air distribution chamber is sectioned by the barrier walls into a plurality of chambers, and rectifying plates are further provided to the air distribution chamber at a narrow position between the paired inclined surfaces to prevent non-uniformity of suction of powder on the sieve layers.
摘要翻译：提供一种净化器，其能够均匀地在筛层的宽度方向上吸入粉末，即使当净化器被配置为设置有形成为向上锥形的空气分配室并且具有设置在空气分配室上方的水平旋风分离器。空气分配室由成对的倾斜面形成为向上锥形，具有形成为配置在分配室上方的水平旋风分离器的吸入通路。此外，在空气分配室中沿着与筛层的纵向方向垂直的方向设置多个阻挡壁，将分配室由阻隔壁分割成多个室，并且整流板还设置在空气分配室在成对的倾斜表面之间的狭窄位置，以防止粉末在筛层上的吸力不均匀。

88. 发明申请

US20100021700A1 Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method 有权
标题翻译：形成用于该方法的小型化图案和抗蚀底物处理溶液的方法
公开(公告)号：US20100021700A1
公开(公告)日：2010-01-28
申请号：US12311725
申请日：2007-10-12
申请人： Go Noya , Ryuta Shimazaki , Masakazu Kobayashi
发明人： Go Noya , Ryuta Shimazaki , Masakazu Kobayashi
IPC分类号： B32B3/10 , G03F7/20 , G03F7/00
CPC分类号： G03F7/40 , Y10S430/106 , Y10S430/107 , Y10S430/11 , Y10T428/24802
摘要： The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.
摘要翻译：本发明提供一种小型化图案的方法，而不会严重地增加生产成本或损害生产效率。本发明还提供用于形成精细图案的精细抗蚀剂图案和抗蚀剂基板处理溶液。图案形成方法包括处理步骤。在处理步骤中，用含有氨基，优选含叔胺的水溶性聚合物的抗蚀剂底物处理溶液处理显影后的抗蚀剂图案，以减少形成的抗蚀剂图案的有效尺寸通过发展。本发明还涉及通过该方法形成的抗蚀剂图案，还涉及该方法中使用的处理溶液。

89. 发明申请

US20090158943A1 Screen printing device and screen printing method 有权
标题翻译：丝网印刷装置和丝网印刷法
公开(公告)号：US20090158943A1
公开(公告)日：2009-06-25
申请号：US12222797
申请日：2008-08-15
申请人： Masakazu Kobayashi
发明人： Masakazu Kobayashi
IPC分类号： B41L27/00 , B41M1/12
CPC分类号： B41M1/12 , B41F15/46 , H05K3/1233 , H05K3/3484 , H05K2203/0139
摘要： A screen printing device configured to print a printing paste on a printed board, the printing paste being applied on a screen printing plate where openings corresponding to a pattern to be printed are formed, the screen printing device includes a first squeegee advanced and pressed downward so that the printing paste is pushed on the printed board corresponding to the openings of the screen printing plate; and a second squeegee situated in the vicinity of the rear of the first squeegee, the second squeegee being configured to provide pressure forward and downward, the pressure having properties different from properties of a pressure provided by the first squeegee, wherein a printing operation by the second squeegee is performed right after a printing operation by the first squeegee.
摘要翻译：一种丝网印刷装置，其被配置为将印刷浆料印刷在印刷板上，所述印刷浆料被施加在丝网印刷板上，所述丝网印刷板形成与待印刷图案相对应的开口，所述丝网印刷装置包括先进并向下压的第一刮板印刷浆料被压在与丝网印刷版的开口相对应的印刷板上; 以及第二刮板，其位于所述第一刮板的后部附近，所述第二刮板被构造成向前和向下提供压力，所述压力具有与由所述第一刮板提供的压力的特性不同的性质，其中，在第一刮板的打印操作之后执行第二刮板。

90. 发明授权

US07407894B2 Compound semiconductor particles and production process therefor 失效
标题翻译：化合物半导体颗粒及其制备方法
公开(公告)号：US07407894B2
公开(公告)日：2008-08-05
申请号：US10525848
申请日：2003-08-27
申请人： Masakazu Kobayashi , Mitsuo Takeda
发明人： Masakazu Kobayashi , Mitsuo Takeda
IPC分类号： H01L21/469
CPC分类号： B82Y30/00 , C01B17/42 , C01B19/002 , C01B19/007 , C01F17/0037 , C01F17/0093 , C01P2002/60 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C09K11/025 , C09K11/565 , C09K11/623 , C09K11/883
摘要： There are provided: compound semiconductor particles that can display more excellent performance in functions peculiar to the compound semiconductor (e.g. luminosity and luminescence efficiency); and a production process for obtaining such compound semiconductor particles with economy, good productivity, and ease.Compound semiconductor particles, according to the present invention, are characterized by comprising body particles and a metal oxide, wherein the body particles have particle diameters of smaller than 1 μm and are covered with the metal oxide and include a compound semiconductor including an essential element combination of at least one element X selected from the group consisting of C, Si, Ge, Sn, Pb, N, P, As, Sb, S, Se, and Te and at least one metal element M that is not identical with the element X, and wherein the metal oxide is a metal oxide to which an acyloxyl group is bonded.
摘要翻译：提供：可以在化合物半导体特有的功能（例如亮度和发光效率）下显示更优异的性能的化合物半导体颗粒; 以及具有经济，良好的生产率和容易性获得这种化合物半导体颗粒的生产方法。根据本发明的化合物半导体颗粒的特征在于包括体颗粒和金属氧化物，其中体微粒的粒径小于1μm，并被金属氧化物覆盖，并且包括包含必需元素组合的化合物半导体的选自由C，Si，Ge，Sn，Pb，N，P，As，Sb，S，Se和Te组成的组中的至少一种元素X，以及与元素不同的至少一种金属元素M X，并且其中所述金属氧化物是键合有酰氧基的金属氧化物。

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