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81. 发明授权

US06852867B2 Process for preparation of a benzofuran derivative 失效
标题翻译：制备苯并呋喃衍生物的方法
公开(公告)号：US06852867B2
公开(公告)日：2005-02-08
申请号：US10333220
申请日：2001-07-19
申请人： Kunio Tamura , Hirohito Shimizu , Yoshiaki Kato , Masahiro Shimizu
发明人： Kunio Tamura , Hirohito Shimizu , Yoshiaki Kato , Masahiro Shimizu
IPC分类号： C07D307/79
CPC分类号： C07D307/79 , Y02P20/55
摘要： An industrially useful process for producing benzofuran derivatives of formula (1): by formylating a compound of formula (2): (where A1 is a protective group), followed by reaction with a compound of formula (4): (where X1 is a halogen atom), then performing a cyclizing reaction and subsequently performing a reaction for hydroxyl group deprotection.
摘要翻译：一种用于生产式（1）的苯并呋喃衍生物的工业上有用的方法：通过将式（2）的化合物（其中A 1是保护基）甲酰化，然后与式（4）的化合物反应:(其中X1是卤原子），然后进行环化反应，随后进行羟基脱保护反应。

82. 发明授权

US06762084B2 Integrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistor 失效
标题翻译：具有存储单元晶体管的集成电路，其栅极氧化层比外围电路晶体管的栅氧化层厚
公开(公告)号：US06762084B2
公开(公告)日：2004-07-13
申请号：US10053543
申请日：2002-01-24
申请人： Masahiro Shimizu , Yoshinori Tanaka , Hideaki Arima
发明人： Masahiro Shimizu , Yoshinori Tanaka , Hideaki Arima
IPC分类号： H01L21336
CPC分类号： H01L27/10873 , H01L27/10852 , H01L27/10894
摘要： A gate insulating film in a memory cell portion is thicker than a gate insulating film in a peripheral circuitry. Source/drain of an MOS transistor in the memory cell portion have double-diffusion-layer structures, respectively, and source/drain of an MOS transistor in the peripheral circuitry have triple-diffusion-layer structures, respectively.
摘要翻译：存储单元部分中的栅极绝缘膜比外围电路中的栅极绝缘膜厚。存储单元部分的MOS晶体管的源极/漏极分别具有双扩散层结构，并且外围电路中的MOS晶体管的源极/漏极分别具有三重扩散层结构。

83. 发明授权

US06707154B2 Semiconductor device and production method for the same 有权
标题翻译：半导体器件及其制作方法相同
公开(公告)号：US06707154B2
公开(公告)日：2004-03-16
申请号：US09755180
申请日：2001-01-08
申请人： Takashi Terauchi , Masahiro Shimizu
发明人： Takashi Terauchi , Masahiro Shimizu
IPC分类号： H01L2343
CPC分类号： H01L21/76844 , H01L21/76804 , H01L21/76828 , H01L21/76832 , H01L21/76834 , H01L21/76837 , H01L21/76838 , H01L21/76843 , H01L21/76897 , H01L23/5283 , H01L27/10873 , H01L27/10888 , H01L2924/0002 , H01L2924/00
摘要： Wires are formed on the main surface of a semiconductor substrate via a silicon oxide film. A nitride film is formed on the wires and the upper edge corner parts of the nitride film are rounded. Another nitride film, covering the nitride film, is formed and an interlayer oxide film is formed so as to cover this film. Contact holes are formed in the interlayer oxide film which reach the nitride film as well as the main surface of the semiconductor substrate and plug parts are formed within those contact holes.
摘要翻译：电线通过氧化硅膜形成在半导体衬底的主表面上。在导线上形成氮化物膜，氮化膜的上缘部分被倒圆。形成覆盖氮化膜的另一氮化物膜，并形成层间氧化膜以覆盖该膜。在到达氮化膜以及半导体衬底的主表面的层间氧化膜中形成接触孔，并且在这些接触孔内形成插头部。

84. 发明授权

US06467337B2 Device for calculating cruising range and method therefor 有权
标题翻译：计算巡航范围的装置及其方法
公开(公告)号：US06467337B2
公开(公告)日：2002-10-22
申请号：US09402662
申请日：1999-10-08
申请人： Takashi Sadahiro , Masahiro Shimizu , Michiyasu Nounen , Mikio Araki
发明人： Takashi Sadahiro , Masahiro Shimizu , Michiyasu Nounen , Mikio Araki
IPC分类号： G01F900
CPC分类号： G01F23/0007 , G01F9/008
摘要： A remaining fuel Z is calculated by subtracting a fuel injection amount J supplied to an engine 14 from stored fuel F measured by a fuel meter 12. A fuel economy Fm is calculated by dividing a running distance M of a vehicle by a fuel injection amount J. A cruising distance K is calculated by multiplying the remaining fuel Z and the fuel economy Fm.
摘要翻译：通过从由燃料计12测量的储存燃料F减去从发动机14供给的燃料喷射量J来计算剩余燃料Z。通过将车辆的行驶距离M除以燃料喷射量J来计算燃料经济性Fm 通过乘以剩余燃料Z和燃料经济性Fm来计算巡航距离K.

85. 发明授权

US06466186B1 Method and apparatus for driving plasma display panel unaffected by the display load amount 有权
标题翻译：用于驱动等离子体显示面板的方法和装置不受显示负载量的影响
公开(公告)号：US06466186B1
公开(公告)日：2002-10-15
申请号：US09404318
申请日：1999-09-24
申请人： Masahiro Shimizu , Toshiro Wakabayashi
发明人： Masahiro Shimizu , Toshiro Wakabayashi
IPC分类号： G09G328
CPC分类号： G09G3/2942 , G09G3/2965 , G09G2310/066 , G09G2360/16
摘要： A drive method of a plasma display panel is disclosed by which prescribed luminance is obtained when display load amount is large, and no luminance saturation is generated when the display load amount is small. This is a method of driving a plasma display panel by which luminescence of sub-fields at prescribed gradations is obtained by employing n sustaining pulses, and the time from the start of charge recovery of the sustaining pulses to the fixation of the output line to a sustaining potential and the time to the fixation to the ground potential are made variable.
摘要翻译：公开了一种等离子体显示面板的驱动方法，当显示负载量大时，获得规定的亮度，并且当显示负载量小时不产生亮度饱和。这是驱动等离子体显示面板的方法，其中通过采用n个维持脉冲获得指定灰度的子场的发光，并且从维持脉冲的充电恢复开始到输出线的固定到时间维持潜力和固定在地电位上的时间是可变的。

86. 发明授权

US06281423B1 Tone generation method based on combination of wave parts and tone-generating-data recording method and apparatus 有权
公开(公告)号：US06281423B1
公开(公告)日：2001-08-28
申请号：US09662361
申请日：2000-09-13
申请人： Masahiro Shimizu , Hideo Suzuki
发明人： Masahiro Shimizu , Hideo Suzuki
IPC分类号： G10H106
CPC分类号： G10H7/02 , G10H2210/095 , G10H2220/116 , G10H2240/056 , G10H2250/615
摘要： Data to be used for generating tone waveform data corresponding to a partial time section of a tone are stored in a basic file or expansion file. In a wave part area of each of the files, there are stored wave part data to be used for generating tone waveform data corresponding to a partial time section of a tone, and the wave part data includes information designating several groups of template data indicative of variations, in the partial time section, of a plurality of tone factors, such as a waveform template, pitch template, amplitude template, spectrum template and time template. Each of the expansion files contains data representative of differences from data stored in the corresponding basic file. The data are stored in such a manner as to avoid overlapping data storage, in order to minimize the total quantity of data.

87. 发明授权

US06274799B1 Method of mapping waveforms to timbres in generation of musical forms 有权
标题翻译：将波形映射到音乐形式的音色中的方法
公开(公告)号：US06274799B1
公开(公告)日：2001-08-14
申请号：US09665507
申请日：2000-09-19
申请人： Masahiro Shimizu
发明人： Masahiro Shimizu
IPC分类号： G10H106
CPC分类号： G10H1/0075 , G10H1/24 , G10H7/02
摘要： A storage medium stores a mapping file defining a set of timbres and mapping a plurality of waveforms to the set of timbres according to performance information. The mapping file is composed of a set of information blocks corresponding to the set of the timbres. The information block contains specification information for specifying waveforms associated to the corresponding timbre, and selection information for selecting one or more of the specified waveforms according to the performance information to thereby map the selected waveform to the timbre. The storage medium stores a first mapping file defining a first set of timbres and containing a plurality of waveforms originally mapped to the first set of timbres, and a second mapping file defining a second set of timbres and containing attribute information for linking the second mapping file to the first mapping file to enable mapping of the waveforms contained in the first mapping file to the second set of the timbres, such that the second mapping file may involve an information block containing specification information for specifying waveforms contained in the first mapping file.
摘要翻译：存储介质存储定义一组音色的映射文件，并根据演奏信息将多个波形映射到该组音色。映射文件由与该组音色相对应的一组信息块组成。信息块包含用于指定与对应音色相关联的波形的指定信息，以及用于根据演奏信息选择一个或多个指定波形的选择信息，从而将所选择的波形映射到音色。存储介质存储定义第一组音色并包含最初映射到第一组音色的多个波形的第一映射文件，以及定义第二组音色并包含用于链接第二映射文件的属性信息的第二映射文件到第一映射文件以使包含在第一映射文件中的波形能够映射到第二组音色，使得第二映射文件可以涉及包含用于指定包含在第一映射文件中的波形的指定信息的信息块。

88. 发明授权

US5347151A DRAM with memory cells having access transistor formed on solid phase epitaxial single crystalline layer and manufacturing method thereof 失效
标题翻译：具有在固相外延单晶层上形成的存取晶体管的存储单元的DRAM及其制造方法
公开(公告)号：US5347151A
公开(公告)日：1994-09-13
申请号：US797888
申请日：1991-11-26
申请人： Masahiro Shimizu , Takehisa Yamaguchi , Natsuo Ajika
发明人： Masahiro Shimizu , Takehisa Yamaguchi , Natsuo Ajika
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/78 , H01L23/00
CPC分类号： H01L27/10808
摘要： Access transistors of memory cells in a DRAM are formed in a solid phrase epitaxial single crystalline layer on the surface of a silicon substrate. A bit line extending over the surface of an element isolation and insulation film is formed by patterning a polycrystalline silicon layer extending to the single crystalline silicon layer as a layer. A stacked capacitor is connected to one source/drain of the access transistor through a conductive layer extending to the single crystalline silicon layer and over a field oxide film. Part of the stacked capacitor extends over the bit line. The connection region of the bit line, the capacitor and the source/drain is formed above the element isolation and insulation film, so that the source/drain region of the access transistor can be reduced.
摘要翻译： DRAM中的存储单元的存取晶体管形成在硅衬底的表面上的固体短边外延单晶层中。在元件隔离和绝缘膜的表面上延伸的位线是通过将延伸到单晶硅层的多晶硅层图案化为一层而形成的。叠层电容器通过延伸到单晶硅层和场氧化物膜上的导电层连接到存取晶体管的一个源极/漏极。堆叠电容器的一部分在位线上延伸。位线，电容器和源极/漏极的连接区域形成在元件隔离和绝缘膜上方，从而可以减小存取晶体管的源极/漏极区域。

89. 发明授权

US5275629A Semiconductor device manufacturing apparatus 失效
标题翻译：半导体装置制造装置
公开(公告)号：US5275629A
公开(公告)日：1994-01-04
申请号：US762355
申请日：1991-09-19
申请人： Natsuo Ajika , Masahiro Shimizu , Takehisa Yamaguchi
发明人： Natsuo Ajika , Masahiro Shimizu , Takehisa Yamaguchi
IPC分类号： G01J1/28 , C23C16/48 , H01L21/00 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/66 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/481 , Y10T29/41
摘要： A semiconductor device manufacturing apparatus has a first space and a second space in a process chamber in which a semiconductor wafer is accommodated, the first and second spaces being separated by the semiconductor wafer. A process gas port opens into the first space adjacent to the obverse surface of the semiconductor wafer, and an infrared light transmission window is formed in a wall of the chamber at the second space facing the reverse surface of the semiconductor wafer. No layers are deposited on the reverse surface of the semiconductor wafer and the infrared light transmission window so that the emissivity at the reverse surface of the semiconductor wafer is not changed during layer deposition. The temperature during processing can therefore be monitored accurately with a pyrometer, and a reduction in the transmissivity of the window is prevented.
摘要翻译：半导体器件制造装置在其中容纳有半导体晶片的处理室中具有第一空间和第二空间，第一和第二空间被半导体晶片隔开。处理气体通道向与半导体晶片的正面相邻的第一空间开口，并且在面向半导体晶片的背面的第二空间处，在室的壁上形成红外光透射窗。在半导体晶片和红外光透射窗的反面上没有层沉积，使得在层沉积期间半导体晶片的反面的发射率不变。因此，可以用高温计精确地监测加工过程中的温度，并且防止窗口的透射率的降低。

90. 发明授权

US4942448A Structure for isolating semiconductor components on an integrated circuit and a method of manufacturing therefor 失效
标题翻译：用于隔离集成电路上的半导体部件的结构及其制造方法
公开(公告)号：US4942448A
公开(公告)日：1990-07-17
申请号：US262303
申请日：1988-10-25
申请人： Katsuhiro Tsukamoto , Masahide Inuishi , Masahiro Shimizu
发明人： Katsuhiro Tsukamoto , Masahide Inuishi , Masahiro Shimizu
IPC分类号： H01L21/76 , H01L21/763 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L21/76 , H01L21/763
摘要： A semiconductor apparatus having a region for isolation between devices comprises a semiconductor substrate, a polycrystalline silicon layer portions selectively formed to be spaced apart from each other on the semiconductor substrate, an impurity diffused region formed under the polycrystalline silicon layer, and a silicon oxide film for filling in a space between the respective adjacent portions of the polycrystalline silicon layer. The impurity diffused region constitutes a source or drain region of a field effect device such as a MOS transistor isolated by the silicon oxide film.
摘要翻译：具有用于在器件之间隔离的区域的半导体器件包括半导体衬底，选择性地形成为在半导体衬底上彼此间隔开的多晶硅层部分，形成在多晶硅层下面的杂质扩散区域和氧化硅膜用于填充多晶硅层的各个相邻部分之间的空间。杂质扩散区域构成诸如通过氧化硅膜隔离的MOS晶体管的场效应器件的源极或漏极区域。

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