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81. 发明申请

US20090121119A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090121119A1
公开(公告)日：2009-05-14
申请号：US12350271
申请日：2009-01-08
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H03F3/08
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

82. 发明申请

US20080064750A1 Fat Composition 有权
标题翻译：脂肪组成
公开(公告)号：US20080064750A1
公开(公告)日：2008-03-13
申请号：US11587757
申请日：2005-04-27
申请人： Kenji Masui , Hidekazu Takahashi
发明人： Kenji Masui , Hidekazu Takahashi
IPC分类号： A61K31/20 , A23D7/00
CPC分类号： A23D7/0053 , A21D2/165 , A23D7/011 , A23D9/007 , A23D9/013
摘要： The invention provides a fat and oil composition which contains diacylglycerol at a high concentration recognized to have an action of suppressing the accumulation of body fat, has a low content of trans-unsaturated fatty acid having a risk of exerting an adverse influence on diseases in circulatory organs, and is used in bakery products. The invention relates to a fat and oil composition containing 60 to 80 wt % diacylglycerol in fats and oils, wherein 90 wt % or more of fatty acids constituting the diacylglycerol are unsaturated fatty acids, and, in triacylglycerol as the balance, tri-saturated triacylglycerol whose every constituent fatty acid is a saturated fatty acid accounts for 45 to 75 wt % and tri-unsaturated triacylglycerol whose every constituent fatty acid is an unsaturated fatty acid accounts for 10 to 50 wt %, and the content of trans-unsaturated fatty acids in total fatty acids constituting the fats and oils is 5 wt % or less.
摘要翻译：本发明提供一种油脂组合物，其含有高浓度的二酰基甘油，被认为具有抑制人体脂肪蓄积的作用，具有低的反式不饱和脂肪酸含量，对于循环中的疾病具有不利影响器官，并用于面包店产品。本发明涉及油脂中含有60〜80重量％的二酰基甘油的油脂组合物，其中构成二酰基甘油的脂肪酸的90重量％以上为不饱和脂肪酸，作为平衡物，在三酰基甘油中，三饱和甘油三酯其各构成脂肪酸为饱和脂肪酸占45〜75重量％，各组成脂肪酸为不饱和脂肪酸的三不饱和三酰甘油为10〜50重量％，反式不饱和脂肪酸的含量为构成脂肪和油的总脂肪酸为5重量％以下。

83. 发明申请

US20080012126A1 Paper including semiconductor device and manufacturing method thereof 有权
标题翻译：纸包括半导体器件及其制造方法
公开(公告)号：US20080012126A1
公开(公告)日：2008-01-17
申请号：US11819157
申请日：2007-06-25
申请人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Kaori Ogita , Naoto Kusumoto
发明人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Kaori Ogita , Naoto Kusumoto
IPC分类号： H01L23/06 , D21F13/00
CPC分类号： D21H21/48 , B32B29/00 , D21H27/32 , G06K19/07749 , H01L23/49855 , H01L27/1214 , H01L27/1255 , H01L27/1266 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.
摘要翻译：实现了能够无线通信的半导体器件的纸张，其中包括半导体器件的部分的不均匀性不突出，并且纸薄，厚度小于或等于130μm。半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。半导体器件以造纸工艺嵌入纸中。

84. 发明申请

US20070249659A1 Imidazopyridine Compound 失效
标题翻译：咪唑并吡啶化合物
公开(公告)号：US20070249659A1
公开(公告)日：2007-10-25
申请号：US11579570
申请日：2005-05-09
申请人： Shunji Sakuraba , Minoru Moriya , Hidekazu Takahashi , Hiroyuki Kishino , Makoto Jitsuoka , Minoru Kameda , Akio Kanatani
发明人： Shunji Sakuraba , Minoru Moriya , Hidekazu Takahashi , Hiroyuki Kishino , Makoto Jitsuoka , Minoru Kameda , Akio Kanatani
IPC分类号： A61K31/44 , C07D471/02
CPC分类号： A61K31/501 , A61K31/437 , A61K31/444 , A61K31/506 , C07D471/04
摘要： The present invention provides an imidazopyridine compound represented by formula (I), wherein R1 and R2 each independently represent a C1-6 alkyl group et al; R3 and R4 each independently represent a hydrogen atom, a methyl et al; Ar1 is a divalent substituent representing a monocyclic or bicyclic, 3- to 8-membered aromatic or aliphatic heterocyclic group et al; Ar2 represents an aromatic carbocyclic group, or an aromatic heterocyclic group; W represents —(CH2)m et al, and m indicates an integer of from 0 to 10. This compound acts as a melanin concentrating hormone receptor antagonist, and is useful as treating agents for obesity.
摘要翻译：本发明提供由式（I）表示的咪唑并吡啶化合物，其中R 1和R 2各自独立地表示C 1-6烷基集团等 R 3和R 4各自独立地表示氢原子，甲基等; Ar 1是表示单环或双环的3至8元芳族或脂族杂环基等的二价取代基; Ar 2表示芳族碳环基或芳族杂环基; W表示 - （CH 2）2，m表示0〜10的整数。该化合物作为黑色素浓缩激素受体拮抗剂起作用，作为肥胖症的治疗剂。

85. 发明授权

US07221400B2 Sensor device for automatic exposure and automatic focus 有权
标题翻译：用于自动曝光和自动对焦的传感器装置
公开(公告)号：US07221400B2
公开(公告)日：2007-05-22
申请号：US10347875
申请日：2003-01-22
申请人： Hidekazu Takahashi , Kazuhiro Saito
发明人： Hidekazu Takahashi , Kazuhiro Saito
IPC分类号： H04N5/235
CPC分类号： H04N5/2351 , H04N5/23212
摘要： An image pickup apparatus including a first photoelectric conversion circuit that has a photoelectric conversion area and is used for performing focus adjustment; a second photoelectric conversion circuit that has a photoelectric conversion area and is used for performing exposure amount adjustment; and a control circuit for controlling a power supply such that power is supplied to the first photoelectric conversion circuit and the second photoelectric conversion circuit independently, in which the first photoelectric conversion circuit and the second photoelectric conversion circuit are formed on a same semiconductor substrate.
摘要翻译：一种图像拾取装置，包括具有光电转换区域并用于进行焦点调整的第一光电转换电路; 具有光电转换区域并用于进行曝光量调整的第二光电转换电路; 以及用于控制电源的控制电路，使得在同一半导体衬底上形成第一光电转换电路和第二光电转换电路的电源被独立地提供给第一光电转换电路和第二光电转换电路。

86. 发明申请

US20070107827A1 Apparatus and method for pressure bonding and method for manufacturing semiconductor device 有权
标题翻译：用于压接的装置和方法以及制造半导体器件的方法
公开(公告)号：US20070107827A1
公开(公告)日：2007-05-17
申请号：US11591776
申请日：2006-11-01
申请人： Hidekazu Takahashi , Naoto Kusumoto
发明人： Hidekazu Takahashi , Naoto Kusumoto
IPC分类号： B32B41/00 , B32B37/00 , B32B38/00
CPC分类号： B32B41/00 , B32B2309/12 , B32B2309/72 , B32B2519/02 , H01L21/67144 , H01L21/6835 , H01L24/75 , H01L24/83 , H01L2221/6835 , H01L2221/68368 , H01L2224/2919 , H01L2224/838 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01054 , H01L2924/0106 , H01L2924/01067 , H01L2924/01068 , H01L2924/0107 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/14 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/01028
摘要： The substrate is placed over a pressure detection film, the element group is placed selectively over the substrate so that a conductive film functioning as an antenna formed over the substrate and a conductive film functioning as a bump formed over the element group overlap each other, the substrate and the element group are pressure-bonded to each other by applying pressure to the substrate and the element group so that the conductive film formed over the substrate and the conductive film functioning as a bump formed over the element group are electrically connected to each other, a value and distribution of pressure applied to the element group at the time of the pressure bonding are detected by the pressure detection film, and the pressure applied at the time of the pressure bonding is controlled, based on the detected pressure value and pressure distribution.
摘要翻译：将衬底放置在压力检测膜上，将元件组选择性地放置在衬底上，使得用作形成在衬底上的天线的导电膜和用作形成在元件组上的凸块的导电膜彼此重叠，基板和元件组通过向基板和元件组施加压力而相互压合，使得形成在基板上的导电膜和用作形成在元件组上的凸块的导电膜彼此电连接通过压力检测膜检测在压接时施加到元件组的压力的值和分布，并且基于检测到的压力值和压力分布来控制压接时施加的压力。

87. 发明申请

US20070070230A1 SOLID STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20070070230A1
公开(公告)日：2007-03-29
申请号：US11559948
申请日：2006-11-15
申请人： Hidekazu Takahashi
发明人： Hidekazu Takahashi
IPC分类号： H04N5/335
CPC分类号： H01L31/11 , H01L27/14643
摘要： A solid state image pickup device is provided which can reduce crosstalks between range finding photoelectric conversion elements (AF sensor) and photometry photoelectric conversion elements (AE sensor). The solid state image pickup device has an n-type epitaxial semiconductor region, a p-type first well region formed in the semiconductor region, a p-type second well region formed in the semiconductor region and electrically separated from the first well, an n-type first impurity doped region formed in the first well region and an n-type second impurity doped region formed in the second well, wherein a photometry photoelectric conversion element is formed by using the p-type first well region and n-type first impurity doped region, and a range finding photoelectric element is formed by using the p-type second well region and n-type impurity doped region.
摘要翻译：提供了可以减少测距光电转换元件（AF传感器）和测光光电转换元件（AE传感器）之间的串扰的固态图像拾取装置。固态摄像装置具有n型外延半导体区域，形成在半导体区域中的p型第一阱区域，形成在半导体区域中并与第一阱电分离的p型第二阱区域，n 形成在第一阱区中的n型第一杂质掺杂区和形成在第二阱中的n型第二杂质掺杂区，其中通过使用p型第一阱区和n型第一杂质形成光度测量光电转换元件掺杂区域，并且通过使用p型第二阱区域和n型杂质掺杂区域形成测距光电元件。

88. 发明申请

US20070047939A1 Focus detecting device and camera system using the same device 失效
标题翻译：聚焦检测装置和摄像机系统使用相同的设备
公开(公告)号：US20070047939A1
公开(公告)日：2007-03-01
申请号：US11499719
申请日：2006-08-07
申请人： Daisuke Inoue , Hidekazu Takahashi
发明人： Daisuke Inoue , Hidekazu Takahashi
IPC分类号： G03B13/00 , G03B3/00
CPC分类号： G03B13/36 , G02B7/34 , G02B7/36
摘要： Although an area type focus detecting device for performing phase difference detection type multi point autofocus is used for high speed high precision autofocus of multi points in a wide region, there is a problem of cost increase due to the increase of the chip area. In accordance with the present invention, photoreceiving area of a specific pixel in an area sensor is made larger than the photoreceiving area of other pixels in the same area sensor. Thus, because the sensor sensitivity is improved and the increase of the chip area is suppressed to a minimum level, the low cost high precision area type focus detecting device can be provided.
摘要翻译：虽然用于执行相位差检测型多点自动对焦的区域型焦点检测装置用于广域中的多点的高速高精度自动对焦，但是由于芯片面积的增加，存在成本增加的问题。根据本发明，使区域传感器中的特定像素的光接收区域比相同区域传感器中的其他像素的光接收区域大。因此，由于传感器灵敏度得到改善并且芯片面积的增加被抑制到最小水平，因此可以提供低成本的高精度区域型焦点检测装置。

89. 发明申请

US20070045672A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070045672A1
公开(公告)日：2007-03-01
申请号：US11491507
申请日：2006-07-24
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H01L29/80
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

90. 发明申请

US20060275960A1 Integrated circuit device and method for manufacturing integrated circuit device 有权
公开(公告)号：US20060275960A1
公开(公告)日：2006-12-07
申请号：US11440128
申请日：2006-05-25
申请人： Daiki Yamada , Yoshitaka Dozen , Eiji Sugiyama , Hidekazu Takahashi
发明人： Daiki Yamada , Yoshitaka Dozen , Eiji Sugiyama , Hidekazu Takahashi
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/1266 , H01L27/124 , H01L27/1292 , H01L27/1296 , H01L29/78621 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81001 , H01L2924/00
摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

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