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    • 81. 发明申请
    • THIN FILM FORMING METHOD AND FILM FORMING APPARATUS
    • 薄膜成型方法和薄膜成型装置
    • US20110117279A1
    • 2011-05-19
    • US12918275
    • 2009-02-17
    • Yasuharu ShinokawaKazuyoshi HondaYuma KamiyamaMasahiro YamamotoTomofumi Yanagi
    • Yasuharu ShinokawaKazuyoshi HondaYuma KamiyamaMasahiro YamamotoTomofumi Yanagi
    • B05D3/00C23C14/50
    • C23C14/562C23C14/24C23C14/541C23C16/466
    • A thin film forming apparatus (100) includes: a vacuum chamber (1); a substrate transfer mechanism (40) that is provided in the vacuum chamber (1) and feeds an elongated substrate (8) to a predetermined film forming section (4) that faces a film forming source (27); an endless belt (10) capable of moving in accordance with the feeding of the substrate (8) by the substrate transfer mechanism (40), and configured to define, along an outer peripheral surface of the endless belt itself, a transfer path of the substrate (8) in the film forming section (4) so that a thin film is formed on a surface of the substrate (8) that is being transferred linearly; a through-hole (16) formed in the endless belt (10); and a substrate cooling unit (30) for introducing a cooling gas between the endless belt (10) and a back surface of the substrate (8) through the through-hole (16) from a side of an inner peripheral surface of the endless belt (10) that is moving.
    • 薄膜形成装置(100)包括:真空室(1); 设置在所述真空室(1)中并将细长基板(8)供给到面向成膜源(27)的预定成膜部分(4)的基板传送机构(40); 能够根据基板传送机构(40)进给基板(8)而移动的环状带(10),并且被构造成沿着环状带本身的外周面限定出传送路径 在成膜部(4)中形成基板(8),使得在被直线转印的基板(8)的表面上形成薄膜; 形成在环形带(10)中的通孔(16); 以及基板冷却单元(30),用于通过所述通孔(16)从所述环形带(10)的内周面的一侧在所述环形带(10)和所述基板(8)的背面之间引入冷却气体, (10)正在移动。
    • 84. 发明申请
    • THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD
    • 薄膜成型装置和薄膜成型方法
    • US20100272901A1
    • 2010-10-28
    • US12745391
    • 2008-11-19
    • Yasuharu ShinokawaKazuyoshi Honda
    • Yasuharu ShinokawaKazuyoshi Honda
    • B05D3/04B05C11/00
    • C23C14/541C23C14/562G11B5/85
    • In a film forming method using gas cooling, a decrease in a film formation rate and an excessive load on a vacuum pump due to the introduction of the gas are avoided while achieving an adequate cooling effect. A thin film forming apparatus of the present invention includes: a cooling body 10 provided close to a rear surface of a substrate 7 in a thin film forming region 14; a gas introducing unit configured to for introduce a gas to between the cooling body 10 and the rear surface of the substrate 7; and a gap maintaining unit 11 contacting the rear surface of the substrate 7 for dividing the thin film forming region 14 into a first thin film forming region 14a and a second thin film forming region 14b where a film forming speed is lower than that in the first thin film forming region 14a, and maintaining a gap between the cooling body 10 and the substrate 7. In addition, a condition for the cooling is set such that an amount of cooling in the first thin film forming region 14a is larger than an amount of cooling in the second thin film forming region 14b.
    • 在使用气体冷却的成膜方法中,避免了由于引入气体而导致的真空泵上的成膜速度降低和过载,同时实现了足够的冷却效果。 本发明的薄膜形成装置包括:在薄膜形成区域14中靠近基板7的后表面设置的冷却体10; 气体导入单元,其构造成将气体引入到所述冷却体10与所述基板7的背面之间; 以及间隙保持单元11,其与基板7的后表面接触,用于将薄膜形成区域14分割成第一薄膜形成区域14a和第二薄膜形成区域14b,其中成膜速度低于第一薄膜形成区域 薄膜形成区域14a,并且保持冷却体10和基板7之间的间隙。此外,设定冷却条件使得第一薄膜形成区域14a中的冷却量大于 在第二薄膜形成区域14b中进行冷却。
    • 89. 发明申请
    • Energy device and method for producing the same
    • 能量装置及其制造方法
    • US20050118504A1
    • 2005-06-02
    • US10985543
    • 2004-11-10
    • Kazuyoshi HondaKiichiro OishiYasuhiko BitoTakayuki Nakamoto
    • Kazuyoshi HondaKiichiro OishiYasuhiko BitoTakayuki Nakamoto
    • B05D5/12H01M4/04H01M4/1395H01M4/38H01M4/66H01M10/052H01M10/36H01M4/58
    • H01M4/661H01M4/0426H01M4/1395H01M4/38H01M4/386H01M10/052Y10T29/49115
    • An auxiliary film-forming source containing a main component element of a collector and a negative active material film-forming source for forming a negative active material thin film are placed adjacent to each other so that parts of film-forming particles from the respective sources are mixed with each other. The collector is moved relatively from the auxiliary film-forming source side to the negative active material film-forming source side, whereby a negative active material thin film containing silicon as a main component is formed on the collector by a vacuum film-forming process. A composition gradient layer, in which a composition distribution of a main component element of the collector and silicon constituting the negative active material is varied smoothly, is formed at the interface between the negative active material thin film and the collector. Even when the silicon particles in the negative active material expand/contract during charging/discharging, the composition gradient layer alleviates the strain involved in the expansion/contraction of the silicon particles, so that peeling at the interface between the negative active material thin film and the collector is suppressed, and the adhesion strength is enhanced. Consequently, cycle characteristics are enhanced.
    • 包含集电体的主要成分元素的辅助成膜源和用于形成负极活性物质薄膜的负极活性物质成膜源彼此相邻放置,使得来自各个源的成膜颗粒的部分为 相互混合 集电体从辅助成膜源侧相对移动到负极活性物质成膜源侧,由此通过真空成膜工艺在集电体上形成含有硅作为主要成分的负极活性物质薄膜。 在负极活性物质薄膜和集电体之间的界面处形成组成梯度层,其中集电体的主要成分元素的组成分布和构成负极活性物质的硅平滑地变化。 即使当负极活性物质中的硅颗粒在充电/放电期间膨胀/收缩时,组成梯度层也减轻了涉及硅颗粒膨胀/收缩的应变,从而在负极活性物质薄膜和 集电体被抑制,粘合强度提高。 因此,循环特性得到提高。