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1. 发明申请

US20100272887A1 THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD 审中-公开
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：US20100272887A1
公开(公告)日：2010-10-28
申请号：US12738951
申请日：2008-11-05
申请人： Kazuyoshi Honda , Yuma Kamiyama , Tomofumi Yanagi , Yasuharu Shinokawa , Masahiro Yamamoto
发明人： Kazuyoshi Honda , Yuma Kamiyama , Tomofumi Yanagi , Yasuharu Shinokawa , Masahiro Yamamoto
IPC分类号： B05D3/12 , C23C14/00 , B05D3/00
CPC分类号： C23C14/541 , C23C14/562 , C23C16/463 , C23C16/466 , C23C16/52 , C23C16/545
摘要： To provide a thin film forming apparatus capable of uniformly and adequately cooling down a substrate. The thin film forming apparatus of the present invention forms a thin film on an elongated substrate in vacuum and includes: a cooling body 1 provided close to a rear surface of the substrate being transferred at an opening 31; a gas introducing unit configured to introduce a gas to between the cooling body 1 and the substrate 21; and a substrate holding unit 3 configured to hold vicinities of both width-direction ends of the substrate traveling at the opening 31.
摘要翻译：提供能够均匀且充分冷却基板的薄膜形成装置。本发明的薄膜形成装置在真空中在细长基板上形成薄膜，其特征在于，包括：在开口部31被转印的，靠近基板的后表面设置的冷却体1; 气体导入单元，被配置为将气体引入到所述冷却体1和所述基板21之间; 以及基板保持单元3，其构造成保持在开口部31行进的基板的宽度方向两端的附近。

2. 发明申请

US20110117279A1 THIN FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20110117279A1
公开(公告)日：2011-05-19
申请号：US12918275
申请日：2009-02-17
申请人： Yasuharu Shinokawa , Kazuyoshi Honda , Yuma Kamiyama , Masahiro Yamamoto , Tomofumi Yanagi
发明人： Yasuharu Shinokawa , Kazuyoshi Honda , Yuma Kamiyama , Masahiro Yamamoto , Tomofumi Yanagi
IPC分类号： B05D3/00 , C23C14/50
CPC分类号： C23C14/562 , C23C14/24 , C23C14/541 , C23C16/466
摘要： A thin film forming apparatus (100) includes: a vacuum chamber (1); a substrate transfer mechanism (40) that is provided in the vacuum chamber (1) and feeds an elongated substrate (8) to a predetermined film forming section (4) that faces a film forming source (27); an endless belt (10) capable of moving in accordance with the feeding of the substrate (8) by the substrate transfer mechanism (40), and configured to define, along an outer peripheral surface of the endless belt itself, a transfer path of the substrate (8) in the film forming section (4) so that a thin film is formed on a surface of the substrate (8) that is being transferred linearly; a through-hole (16) formed in the endless belt (10); and a substrate cooling unit (30) for introducing a cooling gas between the endless belt (10) and a back surface of the substrate (8) through the through-hole (16) from a side of an inner peripheral surface of the endless belt (10) that is moving.
摘要翻译：薄膜形成装置（100）包括：真空室（1）; 设置在所述真空室（1）中并将细长基板（8）供给到面向成膜源（27）的预定成膜部分（4）的基板传送机构（40）; 能够根据基板传送机构（40）进给基板（8）而移动的环状带（10），并且被构造成沿着环状带本身的外周面限定出传送路径在成膜部（4）中形成基板（8），使得在被直线转印的基板（8）的表面上形成薄膜; 形成在环形带（10）中的通孔（16）; 以及基板冷却单元（30），用于通过所述通孔（16）从所述环形带（10）的内周面的一侧在所述环形带（10）和所述基板（8）的背面之间引入冷却气体，（10）正在移动。

3. 发明授权

US08668895B2 Purifying method for metallic silicon and manufacturing method of silicon ingot 失效
标题翻译：金属硅的净化方法及硅锭的制造方法
公开(公告)号：US08668895B2
公开(公告)日：2014-03-11
申请号：US12440531
申请日：2008-06-24
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要翻译：在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度预定时间。

4. 发明申请

US20100196623A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20100196623A1
公开(公告)日：2010-08-05
申请号：US12680043
申请日：2008-09-09
申请人： Kazuyoshi Honda , Yuma Kamiyama , Kunihiko Bessho , Tomofumi Yanagi , Yasuharu Shinokawa , Toshitada Sato
发明人： Kazuyoshi Honda , Yuma Kamiyama , Kunihiko Bessho , Tomofumi Yanagi , Yasuharu Shinokawa , Toshitada Sato
IPC分类号： B05D3/06 , B05D3/02 , B05D3/00 , B05C5/04
CPC分类号： C23C14/246 , B22D11/10 , B22D11/143 , C23C14/30 , C23C14/562
摘要： The present invention provides a film forming method and a film forming apparatus each of which is capable of forming films at low cost. The film forming method of the present invention includes the steps of (i) melting a solid material 51 of a thin film to prepare a melted liquid, solidifying the melted liquid 51a to form a rod-shaped body 51b, and pulling out the rod-shaped body 51b, (ii) melting and supplying a part of the rod-shaped body 51b to a melted liquid (evaporation source) 51d, and (iii) using the melted liquid (evaporation source) 51d to form the thin film. The steps (i), (ii), and (iii) are carried out in vacuum.
摘要翻译：本发明提供一种能够以低成本形成膜的成膜方法和成膜装置。本发明的成膜方法包括以下步骤：（i）熔化薄膜的固体材料51以制备熔融液体，使熔融液体51a固化形成杆状体51b，（ii）将棒状体51b的一部分熔融并供给到熔融液体（蒸发源）51d，（iii）使用熔融液（蒸发源）51d来形成薄膜。步骤（i），（ii）和（iii）在真空中进行。

5. 发明申请

US20110269020A1 ELECTROCHEMICAL ELEMENT ELECTRODE PRODUCING METHOD, ELECTROCHEMICAL ELEMENT ELECTRODE, AND ELECTROCHEMICAL ELEMENT 审中-公开
标题翻译：电化学元件电极生产方法，电化学元件电极和电化学元件
公开(公告)号：US20110269020A1
公开(公告)日：2011-11-03
申请号：US13143123
申请日：2010-01-07
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Tomofumi Yanagi
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Tomofumi Yanagi
IPC分类号： H01M4/134 , B32B3/00 , H01G4/06 , C23C28/00 , B32B38/10 , H01M4/1395 , B05D5/12
CPC分类号： H01M4/485 , H01G11/28 , H01G11/50 , H01G11/70 , H01G11/86 , H01M4/0421 , H01M4/134 , H01M4/1395 , Y02E60/13 , Y10T428/24355
摘要： Provided is a method for easily and surely removing projections formed on the surface of an active material layer by a vacuum process when producing an electrochemical element electrode. Carried out to produce the electrochemical element electrode are: a first step of forming an active material layer on a current collector by a vacuum process, the active material layer being capable of storing and emitting lithium; a second step of storing the lithium in the active material layer; and a third step of removing projections on the surface of the active material layer storing the lithium.
摘要翻译：提供了一种在制造电化学元件电极时通过真空工艺容易且可靠地去除在活性物质层的表面上形成的突起的方法。进行电化学元件电极的制造是：通过真空工艺在集电体上形成活性物质层的第一步骤，活性物质层能够储存和释放锂; 将锂储存在活性物质层中的第二步骤; 以及除去存储锂的活性物质层的表面上的突起的第三步骤。

6. 发明申请

US20090280049A1 PURIFYING METHOD FOR METALLIC SILICON AND MANUFACTURING METHOD OF SILICON INGOT 失效
标题翻译：金属硅的净化方法及其制造方法
公开(公告)号：US20090280049A1
公开(公告)日：2009-11-12
申请号：US12440531
申请日：2008-06-24
申请人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
发明人： Yuma Kamiyama , Kazuyoshi Honda , Yasuharu Shinokawa , Hiromasa Yagi , Tomofumi Yanagi , Kunihiko Bessho
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要翻译：在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度预定时间。

7. 发明申请

US20110268893A1 THIN FILM MANUFACTURING DEVICE AND THIN FILM MANUFACTURING METHOD 审中-公开
标题翻译：薄膜制造装置和薄膜制造方法
公开(公告)号：US20110268893A1
公开(公告)日：2011-11-03
申请号：US13143284
申请日：2010-04-02
申请人： Kazuyoshi Honda , Tomofumi Yanagi , Yasuharu Shinokawa , Sadayuki Okazaki
发明人： Kazuyoshi Honda , Tomofumi Yanagi , Yasuharu Shinokawa , Sadayuki Okazaki
IPC分类号： C23C14/30
CPC分类号： C23C14/24 , C23C14/243 , C23C14/246 , C23C14/30 , C23C14/562 , F27B14/02 , F27B14/04
摘要： The present invention provides a thin film manufacturing device capable of preventing crack damage of a crucible by, while maintaining a melt state of a film formation material in the crucible, tilting the crucible to discharge substantially the entire amount of film formation material from the crucible. The thin film manufacturing device of the present invention includes: a film forming source 9 including a storage portion having an opening at an upper portion thereof to hold a film formation material 3; an electron gun 5 configured to irradiate the film formation material in the storage portion with an electron beam 6 to melt the film formation material, generate a melt, and evaporate the film formation material; a tilt mechanism 8 configured to tilt the film forming source 9 from a film formation posture to an inclined posture to discharge the melt from the storage portion, the inclined posture being a posture by which the storage portion is not able to hold the melt; a vacuum chamber 22 in which the film forming source and the tilt mechanism are accommodated and a thin film is formed on a substrate; and a vacuum pump 34 configured to discharge air in the vacuum chamber. A trajectory of tilting of the film forming source 9 or a trajectory of the electron beam 6 is controlled such that the melt in the storage portion is continuously irradiated with the electron beam 6 while the film forming source 9 is tilted from the film formation posture to the inclined posture.
摘要翻译：本发明提供一种薄膜制造装置，其能够通过在保持坩埚内的成膜材料的熔融状态的同时，使坩埚倾斜，从坩埚中大量排出成膜材料，能够防止坩埚的龟裂损伤。本发明的薄膜制造装置包括：成膜源9，其具有在其上部具有保持成膜材料3的开口部的收容部; 电子枪5，被配置为用电子束6照射存储部分中的成膜材料，以熔化成膜材料，产生熔体并使成膜材料蒸发; 倾斜机构8，其被配置为将成膜源9从成膜姿势倾斜到倾斜姿势，以将熔体从储存部排出，倾斜姿势是储存部不能保持熔体的姿势; 在其上容纳有成膜源和倾斜机构的真空室22，在基板上形成薄膜; 以及构造成将真空室内的空气排出的真空泵34。控制成膜源9的倾斜轨迹或电子束6的轨迹，使得成膜源9从成膜姿势倾斜而使储存部分中的熔体连续地被电子束6照射，倾斜的姿势。

8. 发明授权

US08241699B2 Deposition apparatus and method for manufacturing film by using deposition apparatus 失效
标题翻译：沉积装置及其制造方法
公开(公告)号：US08241699B2
公开(公告)日：2012-08-14
申请号：US12516328
申请日：2008-03-10
申请人： Sadayuki Okazaki , Kazuyoshi Honda , Tomofumi Yanagi , Shoichi Imashiku
发明人： Sadayuki Okazaki , Kazuyoshi Honda , Tomofumi Yanagi , Shoichi Imashiku
IPC分类号： C23C16/52
CPC分类号： C23C14/562 , C23C14/02 , C23C14/226 , H01M4/0421 , H01M4/1395 , H01M10/052
摘要： A vapor deposition device 100 for moving a sheet-like substrate 4 in a roll-to-roll system in a chamber 2 to continuously form a vapor deposition film on the substrate 4. The vapor deposition device 100 comprises an evaporation source 9 for evaporating a vapor-depositing material; a transportation section including first and second rolls 3 and 8 for holding the substrate 4 in the state of being wound therearound and a guide section for guiding the substrate 4; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source 9. Vapor deposition zones 60a through 60d include a planar transportation zone for transporting the substrate 4 such that the surface of the substrate 4 to be subjected to the vapor-depositing material is planar; and the transportation section is located with respect to the evaporation source 9 such that the vapor-depositing material is not incident on the substrate 4 in a direction of the normal to the substrate in the vapor deposition possible zone excluding the shielded zone.
摘要翻译：一种气相沉积装置100，用于在室2中的辊对辊系统中移动片状基底4，以在基底4上连续地形成气相沉积膜。气相沉积装置100包括蒸发源9 气相沉积材料; 一个传送部分，包括用于将基片4保持在其周围的状态的第一和第二辊子3和8;以及用于引导衬底4的引导部分; 以及位于气相沉积可能区域中的屏蔽部分，用于形成从蒸发源9不能通过气相沉积材料到达的屏蔽区域。蒸镀区域60a至60d包括用于输送基板4的平面输送区域使得要经历气相沉积材料的基板4的表面是平面的; 并且运送部分相对于蒸发源9定位，使得气相沉积材料在除了屏蔽区域之外的气相沉积可能区域中不与基板的法线方向入射到基板4上。

9. 发明申请

US20130014699A1 DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING FILM BY USING DEPOSITION APPARATUS 审中-公开
标题翻译：沉积装置和使用沉积装置制造薄膜的方法
公开(公告)号：US20130014699A1
公开(公告)日：2013-01-17
申请号：US13549166
申请日：2012-07-13
申请人： Sadayuki Okazaki , Kazuyoshi Honda , Tomofumi Yanagi , Shoichi Imashiku
发明人： Sadayuki Okazaki , Kazuyoshi Honda , Tomofumi Yanagi , Shoichi Imashiku
IPC分类号： C23C16/54
CPC分类号： C23C14/562 , C23C14/02 , C23C14/226 , H01M4/0421 , H01M4/1395 , H01M10/052
摘要： A vapor deposition device including an evaporation source for evaporating a vapor-depositing material; a transportation section including first and second rolls for holding the substrate in the state of being wound therearound and a guide section for guiding the substrate; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source. Vapor deposition zones include a planar transportation zone for transporting the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is planar; and the transportation section is located with respect to the evaporation source such that the vapor-depositing material is not incident on the substrate in a direction of the normal to the substrate in the vapor deposition possible zone excluding the shielded zone.
摘要翻译：一种气相沉积装置，包括用于蒸发气相沉积材料的蒸发源; 一个传送部分，包括用于保持基片的卷绕在其周围的第一和第二滚筒以及用于引导基片的引导部分; 以及位于气相沉积可能区域中的屏蔽部分，用于形成从气相沉积材料不能从蒸发源到达的屏蔽区域。蒸镀区域包括用于输送基板的平面输送区域，使得要经历气相沉积材料的基板的表面是平面的; 并且运送部相对于蒸发源设置，使得气相沉积材料在除了屏蔽区之外的气相沉积可能区域中不与基板的法线方向入射到基板上。

10. 发明授权

US07891313B2 Gravure coating apparatus 失效
标题翻译：凹版涂布装置
公开(公告)号：US07891313B2
公开(公告)日：2011-02-22
申请号：US11727205
申请日：2007-03-23
申请人： Yutaka Wakai , Tomofumi Yanagi
发明人： Yutaka Wakai , Tomofumi Yanagi
IPC分类号： B05C1/08
CPC分类号： B05C1/0817 , B05C1/0808 , H01M4/0404 , H01M4/139 , H01M10/052 , H01M10/345
摘要： A gravure coating apparatus is provided for forming a stripe-shaped coating film by means of a gravure roll having a groove between plate cylinders. The apparatus has a scraping member having: side edges each of which contacts an edge surface of one of the plate cylinders so as to be approximately aligned along the radial direction of the gravure roll and scrapes a coating solution on the edge surface; a groove-like passage for discharging the coating solution, the groove-like passage being formed in a generally central portion of the inner peripheral surface along the bottom surface of the groove so as to be aligned along the rotation direction of the gravure roll; and a tapered surface which guides the coating solution from the edges to the groove-like passage. The scraping member is disposed in the groove, whereby the coating film formed by the plate cylinders is made uniform over the entire surface using a simple configuration.
摘要翻译：提供一种凹版涂布装置，用于通过在印版滚筒之间具有凹槽的凹版辊形成条形涂膜。该装置具有：刮削构件，其具有与所述印版滚筒中的一个的边缘表面接触的侧边缘，以沿着所述凹版辊的径向大致对准，并且刮擦所述边缘表面上的涂布溶液; 用于排出涂布溶液的槽状通道，所述槽状通道沿着所述凹槽的底表面形成在所述内周表面的大致中心部分中，以沿着所述凹版辊的旋转方向对齐; 以及将涂布溶液从边缘引导到槽状通道的锥形表面。刮削构件设置在槽中，由此使用简单的构造使由平板滚筒形成的涂膜在整个表面上均匀。

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