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81. 发明授权

US07265950B2 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权
标题翻译：磁阻效应元件，其制造方法，磁再现元件和磁存储器
公开(公告)号：US07265950B2
公开(公告)日：2007-09-04
申请号：US10935578
申请日：2004-09-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译：磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。

82. 发明授权

US07072152B2 Magnetic head and magnetic reproducing system 失效
标题翻译：磁头和磁再现系统
公开(公告)号：US07072152B2
公开(公告)日：2006-07-04
申请号：US11078439
申请日：2005-03-14
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.
摘要翻译：提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统。 MR元件的有源区域由感测电流流过的部分的面积定义。此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号活跃区域。当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

83. 发明申请

US20050042478A1 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 有权
标题翻译：磁阻效应元件，其制造方法，磁再现元件和磁存储器
公开(公告)号：US20050042478A1
公开(公告)日：2005-02-24
申请号：US10935578
申请日：2004-09-08
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： B32B7/02 , G11B5/39 , G11B5/64
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译：磁阻效应元件包括第一铁磁层（1），覆盖第一铁磁层的绝缘层（3）和覆盖绝缘层的第二铁磁层（2）。绝缘层形成了具有不大于20nm的开口宽度的通孔（A），并且第一和第二铁磁层经由通孔相互连接。

84. 发明授权

US06710984B1 Magnetoresistive effect device utilizing a magnetization-coupling layer which couples adjacent ferromagnetic layers perpendicularly 有权
标题翻译：磁阻效应器件利用垂直耦合相邻铁磁层的磁化耦合层
公开(公告)号：US06710984B1
公开(公告)日：2004-03-23
申请号：US09668471
申请日：2000-09-25
申请人： Hiromi Yuasa , Yuzo Kamiguchi
发明人： Hiromi Yuasa , Yuzo Kamiguchi
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , G11B5/3925 , G11B2005/3996 , H01F10/3263
摘要： A magnetoresistance effect element has two ferromagnetic films separated by an interlayer film coupling the magnetization of one ferromagnetic layer in a direction perpendicular to the magnetization direction of the other ferromagnetic film, with an antiferromagnetic layer disposed adjacent to one of the ferromagnetic layers, and a free magnetic layer disposed adjacent to an antiferromagnetic film. The heat treatment for producing in the free layer a simple magnetic domain and the heat treatment for fixing the magnetizations of the ferromagnetic layers are simultaneously carried out. Thereby, because maintaining a difference between the blocking temperature of the antiferromagnetic layer adjacent to the free layer and the blocking temperature of an antiferromagnetic layer adjacent to the pin layer becomes unnecessary, an antiferromagnetic layer having a high exchange coupling magnetic field and a high blocking temperature can be selected. Also, because the allowable range to the dispersion of the exchange coupling magnetic field is widen, thinning of the film of the antiferromagnetic layer can be realized and the magnetoresistance effect element can be suitably applied to a magnetic reproducing head requiring a narrow gap.
摘要翻译：磁阻效应元件具有由层间膜分离的两个铁磁膜，该层间膜在垂直于另一个铁磁膜的磁化方向的方向上耦合一个铁磁层的磁化，其中反铁磁层与铁磁层之一相邻设置，邻近反铁磁膜设置的磁性层。同时进行用于在自由层中制造简单磁畴的热处理和用于固定铁磁层的磁化的热处理。因此，由于保持与自由层相邻的反铁磁性层的阻挡温度与与引线层相邻的反铁磁性层的阻挡温度之间的差异变得不必要，所以具有高交换耦合磁场和高阻挡温度的反铁磁层可以选择。此外，由于交换耦合磁场的分散的容许范围变宽，因此可以实现反铁磁层的薄膜的薄化，并且可以将磁阻效应元件适用于需要窄间隙的磁性再现头。

85. 发明授权

US07440239B2 Magneto-resistance effect element and reproducing head 有权
标题翻译：磁阻效应元件和再现头
公开(公告)号：US07440239B2
公开(公告)日：2008-10-21
申请号：US10671586
申请日：2003-09-29
申请人： Yuzo Kamiguchi , Masayuki Takagishi , Yuichi Ohsawa
发明人： Yuzo Kamiguchi , Masayuki Takagishi , Yuichi Ohsawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3903 , G01R33/09 , G11B5/39 , G11B2005/0002 , H01L43/08
摘要： It is possible to obtain sensitivity which can achieve an excellent error rate with a high recording density. There are provided a magnetization free layer which has two opposed main surfaces, one of which is set to be generally parallel to an air bearing surface; an intermediate layer which is formed on an opposite side face of the magnetization free layer from a medium to come in contact with the magnetization free layer; and a pair of magnetization pinned layers which are formed on an opposite side face of the intermediate layer from the magnetization free layer to come in contact with the intermediate layer and extend outwardly. A sense current flows from one magnetization pinned layer to the other magnetization pinned layer through the magnetization free layer.
摘要翻译：可以获得可以以高记录密度实现出色错误率的灵敏度。提供了一个磁化自由层，它具有两个相对的主表面，其中一个主表面大致平行于空气轴承表面; 在与磁化自由层接触的介质上形成在磁化自由层的相对侧面上的中间层; 以及一对磁化固定层，其形成在中间层的与磁化自由层相对的侧面上以与中间层接触并向外延伸。感测电流通过无磁化层从一个磁化固定层流向另一个磁化固定层。

86. 发明授权

US07295407B2 Magnetoresistance effect element, magnetic head and magnetic reproducing system 有权
标题翻译：磁阻效应元件，磁头和磁再现系统
公开(公告)号：US07295407B2
公开(公告)日：2007-11-13
申请号：US11760254
申请日：2007-06-08
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, an electrode connected to a part of a principal plane of the stacked film, the magnetoresistance effect element having a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, a sense current detecting the variation of the resistance being applied to the film planes of the magnetization fixed layer and the magnetization free layer via the electrode in a direction substantially perpendicular to the magnetization fixed layer and the magnetization free layer. The electrode includes a pillar electrode portion substantially perpendicularly extending from the principal plane of the stacked film, and a feed portion extending substantially in parallel to the principal plane of the stacked film and the pillar electrode portion has two conductive layers in the central portion and outer peripheral portion thereof, and the sense current being caused to flow in the opposite directions to each other in the central portion and the outer peripheral portion.
摘要翻译：一种磁阻效应元件，包括磁化方向基本上固定在一个方向上的磁化固定层和磁化方向响应于外部磁场而变化的磁化自由层的堆叠膜，连接到磁阻效应元件的电阻响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的磁阻效应元件的一部分，在与磁化固定层和磁化自由层基本垂直的方向上，通过电极施加到磁化固定层和无磁化层的膜平面上的电阻的变化。所述电极包括从所述层叠膜的主面大致垂直延伸的柱状电极部和与所述层叠膜的主面大致平行地延伸的供电部，所述柱电极部在所述中央部和外部具有两个导电层其周边部分，并且感测电流在中心部分和外周部分中沿相反方向流动。

87. 发明申请

US20070230065A1 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC REPRODUCING SYSTEM 有权
标题翻译：磁阻效应元件，磁头和磁复制系统
公开(公告)号：US20070230065A1
公开(公告)日：2007-10-04
申请号：US11760254
申请日：2007-06-08
申请人： Hiromi YUASA , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi YUASA , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, an electrode connected to a part of a principal plane of the stacked film, the magnetoresistance effect element having a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, a sense current detecting the variation of the resistance being applied to the film planes of the magnetization fixed layer and the magnetization free layer via the electrode in a direction substantially perpendicular to the magnetization fixed layer and the magnetization free layer. The electrode includes a pillar electrode portion substantially perpendicularly extending from the principal plane of the stacked film, and a feed portion extending substantially in parallel to the principal plane of the stacked film and the pillar electrode portion has two conductive layers in the central portion and outer peripheral portion thereof, and the sense current being caused to flow in the opposite directions to each other in the central portion and the outer peripheral portion.
摘要翻译：一种磁阻效应元件，包括磁化方向基本上固定在一个方向上的磁化固定层和磁化方向响应于外部磁场而变化的磁化自由层的堆叠膜，连接到磁阻效应元件的电阻响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的磁阻效应元件的一部分，在与磁化固定层和磁化自由层基本垂直的方向上，通过电极施加到磁化固定层和无磁化层的膜平面上的电阻的变化。所述电极包括从所述层叠膜的主面大致垂直延伸的柱状电极部和与所述层叠膜的主面大致平行地延伸的供电部，所述柱电极部在所述中央部和外部具有两个导电层其周边部分，并且感测电流在中心部分和外周部分中沿相反方向流动。

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