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1. 发明申请

US20060126230A1 Magnetoresistance effect element, magnetic head and magnetic reproducing system 有权
公开(公告)号：US20060126230A1
公开(公告)日：2006-06-15
申请号：US11347208
申请日：2006-02-06
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

2. 发明授权

US06914757B2 Magnetoresistance effect element, magnetic head and magnetic reproducing system 有权
标题翻译：磁阻效应元件，磁头和磁再现系统
公开(公告)号：US06914757B2
公开(公告)日：2005-07-05
申请号：US09961171
申请日：2001-09-24
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： A magnetoresistance effect element includes a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer formed between the magnetization fixed layer and the magnetization free layer. The magnetoresistance effect element has a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, the resistance being detected when a sense current is applied to the film planes of the magnetization fixed layer, the non-magnetic intermediate layer, and the magnetization free layer in a direction substantially perpendicular thereto. The film area of the non-magnetic intermediate layer is smaller than the film area of each of the magnetization fixed layer and the magnetization free layer, the magnetoresistance effect element has a single conductive part with a film area smaller than the film area of each of the magnetoresistance effect element, and the magnetoresistance effect element is configured such that the sense current flows only through the single conductive part.
摘要翻译：磁阻效应元件包括其中磁化方向基本上固定到一个方向的磁化固定层，其中磁化方向响应于外部磁场而变化的磁化自由层以及形成在其间的非磁性中间层磁化固定层和无磁化层。磁阻效应元件具有响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的电阻，当感测电流施加到膜平面时，检测电阻磁化固定层，非磁性中间层和与磁化自由层基本垂直的方向。非磁性中间层的膜面积小于磁化固定层和磁化自由层的膜面积，磁阻效应元件具有单个导电部分，其膜面积小于膜面积磁阻效应元件和磁阻效应元件被构造成使得感测电流仅流过单个导电部件。

3. 发明授权

US07072152B2 Magnetic head and magnetic reproducing system 失效
标题翻译：磁头和磁再现系统
公开(公告)号：US07072152B2
公开(公告)日：2006-07-04
申请号：US11078439
申请日：2005-03-14
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.
摘要翻译：提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统。 MR元件的有源区域由感测电流流过的部分的面积定义。此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号活跃区域。当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

4. 发明授权

US07016162B2 Magnetoresistance effect element, magnetic head and magnetic reproducing system having pillar electrodes 失效
标题翻译：具有柱电极的磁阻效应元件，磁头和磁再生系统
公开(公告)号：US07016162B2
公开(公告)日：2006-03-21
申请号：US10967262
申请日：2004-10-19
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.
摘要翻译：提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统。 MR元件的有源区域由感测电流流过的部分的面积定义。此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号活跃区域。当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

5. 发明申请

US20050152074A1 Magnetoresistance effect element, magnetic head and magnetic reproducing system 失效
标题翻译：磁阻效应元件，磁头和磁再现系统
公开(公告)号：US20050152074A1
公开(公告)日：2005-07-14
申请号：US11078439
申请日：2005-03-14
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.
摘要翻译：提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统。 MR元件的有源区域由感测电流流过的部分的面积定义。此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号活跃区域。当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

6. 发明授权

US07245461B2 Magnetoresistance effect element having a pillar electrode 有权
标题翻译：具有柱电极的磁阻效应元件
公开(公告)号：US07245461B2
公开(公告)日：2007-07-17
申请号：US11347208
申请日：2006-02-06
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.
摘要翻译：提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统。 MR元件的有源区域由感测电流流过的部分的面积定义。此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号活跃区域。当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

7. 发明申请

US20050047026A1 Magnetoresistance effect element, magnetic head and magnetic reproducing system 失效
公开(公告)号：US20050047026A1
公开(公告)日：2005-03-03
申请号：US10967262
申请日：2004-10-19
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G01R33/09 , G11B5/00 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

8. 发明授权

US07295407B2 Magnetoresistance effect element, magnetic head and magnetic reproducing system 有权
标题翻译：磁阻效应元件，磁头和磁再现系统
公开(公告)号：US07295407B2
公开(公告)日：2007-11-13
申请号：US11760254
申请日：2007-06-08
申请人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi Yuasa , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, an electrode connected to a part of a principal plane of the stacked film, the magnetoresistance effect element having a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, a sense current detecting the variation of the resistance being applied to the film planes of the magnetization fixed layer and the magnetization free layer via the electrode in a direction substantially perpendicular to the magnetization fixed layer and the magnetization free layer. The electrode includes a pillar electrode portion substantially perpendicularly extending from the principal plane of the stacked film, and a feed portion extending substantially in parallel to the principal plane of the stacked film and the pillar electrode portion has two conductive layers in the central portion and outer peripheral portion thereof, and the sense current being caused to flow in the opposite directions to each other in the central portion and the outer peripheral portion.
摘要翻译：一种磁阻效应元件，包括磁化方向基本上固定在一个方向上的磁化固定层和磁化方向响应于外部磁场而变化的磁化自由层的堆叠膜，连接到磁阻效应元件的电阻响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的磁阻效应元件的一部分，在与磁化固定层和磁化自由层基本垂直的方向上，通过电极施加到磁化固定层和无磁化层的膜平面上的电阻的变化。所述电极包括从所述层叠膜的主面大致垂直延伸的柱状电极部和与所述层叠膜的主面大致平行地延伸的供电部，所述柱电极部在所述中央部和外部具有两个导电层其周边部分，并且感测电流在中心部分和外周部分中沿相反方向流动。

9. 发明申请

US20070230065A1 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC REPRODUCING SYSTEM 有权
标题翻译：磁阻效应元件，磁头和磁复制系统
公开(公告)号：US20070230065A1
公开(公告)日：2007-10-04
申请号：US11760254
申请日：2007-06-08
申请人： Hiromi YUASA , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
发明人： Hiromi YUASA , Hiroaki Yoda , Yuzo Kamiguchi , Tomohiko Nagata
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3912 , G11B5/3919 , G11B5/3922 , G11B5/3929 , G11B5/398 , H01F10/324 , H01L43/08
摘要： A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, an electrode connected to a part of a principal plane of the stacked film, the magnetoresistance effect element having a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, a sense current detecting the variation of the resistance being applied to the film planes of the magnetization fixed layer and the magnetization free layer via the electrode in a direction substantially perpendicular to the magnetization fixed layer and the magnetization free layer. The electrode includes a pillar electrode portion substantially perpendicularly extending from the principal plane of the stacked film, and a feed portion extending substantially in parallel to the principal plane of the stacked film and the pillar electrode portion has two conductive layers in the central portion and outer peripheral portion thereof, and the sense current being caused to flow in the opposite directions to each other in the central portion and the outer peripheral portion.
摘要翻译：一种磁阻效应元件，包括磁化方向基本上固定在一个方向上的磁化固定层和磁化方向响应于外部磁场而变化的磁化自由层的堆叠膜，连接到磁阻效应元件的电阻响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的磁阻效应元件的一部分，在与磁化固定层和磁化自由层基本垂直的方向上，通过电极施加到磁化固定层和无磁化层的膜平面上的电阻的变化。所述电极包括从所述层叠膜的主面大致垂直延伸的柱状电极部和与所述层叠膜的主面大致平行地延伸的供电部，所述柱电极部在所述中央部和外部具有两个导电层其周边部分，并且感测电流在中心部分和外周部分中沿相反方向流动。

10. 发明授权

US06495275B2 Multi-layered thin-film functional device and magnetoresistance effect element 有权
标题翻译：多层薄膜功能元件和磁阻效应元件
公开(公告)号：US06495275B2
公开(公告)日：2002-12-17
申请号：US09927379
申请日：2001-08-13
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B5127
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.
摘要翻译：磁阻效应元件包括自由层，被钉扎层和介于自由层和钉扎层之间的非磁性中间层。另外，金属阻挡层设置成与第一磁性层相邻。位于金属阻挡层附近的电子反射层含有选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种。

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