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81. 发明申请

US20110068346A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20110068346A1
公开(公告)日：2011-03-24
申请号：US12870019
申请日：2010-08-27
申请人： Jung-Min Lee , Choong-Ho Lee
发明人： Jung-Min Lee , Choong-Ho Lee
IPC分类号： H01L33/16
CPC分类号： H01L27/3276 , H05K3/323 , H05K2201/0133 , H05K2201/0221 , H05K2201/0338 , H05K2201/10674
摘要： A display device includes a wire substrate including a wire unit for driving the display device, an integrated circuit chip mounted at the wire substrate, and a pad unit extended from the wire unit to be disposed between the wire substrate and the integrated circuit chip. The pad unit is connected to the integrated circuit chip. The pad unit includes a first conductive layer extended from the wire unit, and a second conductive layer disposed on the first conductive layer. The hardness of the second conductive layer is less than the hardness of the first conductive layer.
摘要翻译：显示装置包括：线基板，包括用于驱动显示装置的线单元，安装在线基板上的集成电路芯片;以及从布线单元延伸以设置在线基板和集成电路芯片之间的焊盘单元。焊盘单元连接到集成电路芯片。焊盘单元包括从导线单元延伸的第一导电层和设置在第一导电层上的第二导电层。第二导电层的硬度小于第一导电层的硬度。

82. 发明申请

US20100310768A1 THIN FILM DEPOSITION APPARATUS 有权
标题翻译：薄膜沉积装置
公开(公告)号：US20100310768A1
公开(公告)日：2010-12-09
申请号：US12795001
申请日：2010-06-07
申请人： Choong-Ho Lee , Jung-Min Lee
发明人： Choong-Ho Lee , Jung-Min Lee
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C14/243 , C23C14/044
摘要： A thin film deposition apparatus capable of forming a precise deposition pattern on a large substrate includes a deposition source; a first nozzle disposed at a side of the deposition source having a plurality of first slits; a second nozzle disposed opposite to the first nozzle having a plurality of second slits; and a second nozzle frame bound to the second nozzle so as to support the second nozzle. The second nozzle frame includes two first frame portions spaced apart from each other and disposed in a direction in which the plurality of second slits are arranged, and two second frame portions each connecting the two first frame portions to each other, wherein the second frame portions are curved in the direction in which the plurality of second slits are arranged, so as to form arches.
摘要翻译：能够在大的基板上形成精确的沉积图案的薄膜沉积装置包括沉积源; 设置在沉积源侧的第一喷嘴具有多个第一狭缝; 与所述第一喷嘴相对设置的具有多个第二狭缝的第二喷嘴; 以及与第二喷嘴结合以支撑第二喷嘴的第二喷嘴框架。第二喷嘴框架包括彼此间隔开并沿着布置多个第二狭缝的方向设置的两个第一框架部分，以及将两个第一框架部分彼此连接的两个第二框架部分，其中第二框架部分在多个第二狭缝的排列方向上弯曲，形成拱形。

83. 发明申请

US20100310759A1 METHOD AND APPARATUS FOR CLEANING ORGANIC DEPOSITION MATERIALS 有权
标题翻译：清洁有机沉积材料的方法和装置
公开(公告)号：US20100310759A1
公开(公告)日：2010-12-09
申请号：US12795896
申请日：2010-06-08
申请人： Jung-Min Lee , Choong-Ho Lee , Yoon-Chan Oh , Hee-Seong Jeong
发明人： Jung-Min Lee , Choong-Ho Lee , Yoon-Chan Oh , Hee-Seong Jeong
IPC分类号： C23C16/04 , B05D5/06
CPC分类号： C23C14/042 , B08B7/0035 , B08B7/0042 , C23C14/564 , H01L51/56
摘要： A method of cleaning off organic deposition material accumulated on a mask includes forming an organic deposition material pattern on a substrate using the mask, which includes a plurality of slots, in a deposition chamber including a deposition source; transporting the mask to a stock chamber that is maintained at a vacuum and adjacent to the deposition chamber; and partially cleaning off the organic deposition material accumulated along the boundaries of the slots of the mask in the stock chamber. A system to clean off an organic deposition material accumulated on a mask having a plurality of slots, includes a deposition chamber including a deposition source; and a stock chamber that is maintained at substantially the same vacuum as the deposition chamber and includes a cleaning device that cleans off the organic deposition material accumulated on the mask.
摘要翻译：清理积聚在掩模上的有机沉积材料的方法包括：在包括沉积源的沉积室中，使用包括多个槽的掩模在基板上形成有机沉积材料图案; 将掩模运送到保持在真空并邻近沉积室的储存室; 并且部分地清除沿着储存室中的掩模的槽的边界积聚的有机沉积材料。一种清除积聚在具有多个狭缝的掩模上的有机沉积材料的系统，包括：沉积室，包括沉积源; 以及保持在与沉积室基本相同的真空的储存室，并且包括清除积聚在掩模上的有机沉积材料的清洁装置。

84. 发明申请

US20100307409A1 THIN FILM DEPOSITION APPARATUS 有权
标题翻译：薄膜沉积装置
公开(公告)号：US20100307409A1
公开(公告)日：2010-12-09
申请号：US12794093
申请日：2010-06-04
申请人： Jung-Min LEE , Choong-Ho Lee
发明人： Jung-Min LEE , Choong-Ho Lee
IPC分类号： B05B7/00
CPC分类号： C23C14/042 , C23C14/12 , C23C14/243 , H01L51/0005
摘要： A thin film deposition apparatus to form a fine pattern on a large substrate. The thin film deposition apparatus includes a deposition source, a first nozzle that is disposed at a side of the deposition source and includes a plurality of first slits, a second nozzle that is disposed opposite to the deposition source and includes a plurality of second slits, and a second nozzle reinforcement unit that is disposed on the second nozzle and crosses the second nozzle.
摘要翻译：一种薄膜沉积设备，用于在大的衬底上形成精细图案。薄膜沉积设备包括沉积源，设置在沉积源侧并包括多个第一狭缝的第一喷嘴，与沉积源相对设置并包括多个第二狭缝的第二喷嘴，以及第二喷嘴加强单元，其设置在所述第二喷嘴上并且穿过所述第二喷嘴。

85. 发明申请

US20100020601A1 Multi-Bit Flash Memory Devices and Methods of Programming and Erasing the Same 有权
标题翻译：多位闪存设备及其编程和擦除方法
公开(公告)号：US20100020601A1
公开(公告)日：2010-01-28
申请号：US12471729
申请日：2009-05-26
申请人： Se-Hoon Lee , Choong-Ho Lee , Jung-Dal Choi
发明人： Se-Hoon Lee , Choong-Ho Lee , Jung-Dal Choi
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C2211/5641
摘要： A non-volatile memory device includes an array of non-volatile memory cells configured to support single bit and multi-bit programming states. A control circuit is provided, which is configured to program a first page of non-volatile memory cells in the array as M-bit cells during a first programming operation and further configured to program the first page of non-volatile memory cells as N-bit cells during a second programming operation. The first and second programming operations are separated in time by at least one operation to erase the first page of non-volatile memory cells. M and N are unequal integers greater than zero.
摘要翻译：非易失性存储器件包括被配置为支持单位和多位编程状态的非易失性存储器单元的阵列。提供了一种控制电路，其被配置为在第一编程操作期间将阵列中的第一页非易失性存储单元编程为M位单元，并且还被配置为将第一页非易失性存储单元编程为N- 在第二次编程操作期间。第一和第二编程操作通过至少一个擦除非易失性存储器单元的第一页的操作在时间上被分离。 M和N是不等于零的整数。

86. 发明申请

US20090315094A1 Nonvolatile Memory Device 有权
标题翻译：非易失性存储器件
公开(公告)号：US20090315094A1
公开(公告)日：2009-12-24
申请号：US12437773
申请日：2009-05-08
申请人： Jong-Ho Lim , Choong-Ho Lee , Hye-Jin Cho
发明人： Jong-Ho Lim , Choong-Ho Lee , Hye-Jin Cho
IPC分类号： H01L29/788
CPC分类号： H01L27/11551
摘要： Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device includes a plurality of stacked semiconductor layers and a plurality of memory cell transistors which is formed on each of a plurality of semiconductor layers and serially connected. Memory cell transistors disposed on different semiconductor layers are serially connected to include one cell string forming a current path in a plurality of semiconductor layers, a first selection transistor serially connected to one edge portion of the cell string and a second selection transistor serially connected to the other edge portion of the cell string.
摘要翻译：具有三维结构的非易失性存储装置。非易失性存储器件包括多个堆叠的半导体层和形成在多个半导体层中的每一个上并且串联连接的多个存储单元晶体管。配置在不同的半导体层上的存储单元晶体管被串联连接以包括在多个半导体层中形成电流路径的一个单元串，串联连接到单元串的一个边缘部分的第一选择晶体管和串联连接到单元串的第二选择晶体管单元格串的其他边缘部分。

87. 发明授权

US07615437B2 Non-volatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07615437B2
公开(公告)日：2009-11-10
申请号：US12153071
申请日：2008-05-13
申请人： Suk-Kang Sung , Kyu-Charn Park , Choong-Ho Lee
发明人： Suk-Kang Sung , Kyu-Charn Park , Choong-Ho Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/743 , H01L21/28123 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A method of manufacturing a non-volatile memory device includes sequentially depositing a first insulation layer, a charge storage layer, and a second insulation layer on a substrate, forming a first opening through the resultant structure to expose the substrate, forming second and third openings through the second insulation layer to form a second insulation layer pattern, forming a conductive layer on the second insulation layer pattern, forming a photoresist pattern structure on the conductive layer, and forming simultaneously a common source line, at least one ground selection line, at least one string selection line, and a plurality of gate structures on the substrate by etching through the photoresist pattern structure, wherein the common source line and the gate structures are formed simultaneously on a substantially same level and of substantially same components.
摘要翻译：一种制造非易失性存储器件的方法包括在衬底上依次沉积第一绝缘层，电荷存储层和第二绝缘层，形成通过所得结构的第一开口以露出衬底，形成第二和第三开口通过第二绝缘层形成第二绝缘层图案，在第二绝缘层图案上形成导电层，在导电层上形成光致抗蚀剂图形结构，同时形成共同的源极线，至少一个接地选择线，至少一个串选择线，以及通过蚀刻通过光致抗蚀剂图案结构在衬底上的多个栅极结构，其中公共源极线和栅极结构同时形成在基本相同的水平面上并且基本上相同的部件。

88. 发明授权

US07602633B2 Non-volatile memory device, method of manufacturing the same, and method of operating the same 有权
标题翻译：非易失性存储器件，其制造方法及其操作方法
公开(公告)号：US07602633B2
公开(公告)日：2009-10-13
申请号：US11946737
申请日：2007-11-28
申请人： Byung-Yong Choi , Choong-Ho Lee , Kyu-Charn Park
发明人： Byung-Yong Choi , Choong-Ho Lee , Kyu-Charn Park
IPC分类号： G11C11/00
CPC分类号： H01L29/685
摘要： A non-volatile memory device includes a substrate, resistance patterns, a gate dielectric layer, a gate electrode pattern, a first impurity region and a second impurity region. The substrate has recesses. The recesses are filled with the resistance patterns. The resistance patterns include a material having a resistance that is variable in accordance with a voltage applied thereto. The gate dielectric layer is formed on the substrate. The gate electrode pattern is formed on the gate dielectric layer. The first and second impurity regions are formed in the substrate. The first impurity region and the second impurity region contact side surfaces of the resistance patterns. Further, the resistance patterns, the first impurity region and the second impurity region define a channel region. Thus, the non-volatile memory device may store data using a variable resistance of the resistance patterns so that the non-volatile memory device may have excellent operational characteristics.
摘要翻译：非易失性存储器件包括衬底，电阻图案，栅极介电层，栅极电极图案，第一杂质区域和第二杂质区域。基板有凹槽。凹槽中填充有电阻图案。电阻图案包括具有根据施加到其上的电压而可变的电阻的材料。栅极电介质层形成在基板上。栅极电极图案形成在栅极介电层上。在衬底中形成第一和第二杂质区。电阻图案的第一杂质区和第二杂质区接触侧表面。此外，电阻图案，第一杂质区域和第二杂质区域限定沟道区域。因此，非易失性存储器件可以使用电阻图案的可变电阻来存储数据，使得非易失性存储器件可以具有优异的操作特性。

89. 发明申请

US20090237324A1 Dual display module and display apparatus having the same 失效
标题翻译：双显示模块和具有该显示模块的显示装置
公开(公告)号：US20090237324A1
公开(公告)日：2009-09-24
申请号：US12382556
申请日：2009-03-18
申请人： Yoon-Chan Oh , Chan-Kyoung Moon , Kyoung-Soo Lee , Min-Hyeng Lee , Seon-Hee Kim , Gun-Mo Kim , Choong-Ho Lee , Byung-Hee Kim , Kuen-Dong Ha
发明人： Yoon-Chan Oh , Chan-Kyoung Moon , Kyoung-Soo Lee , Min-Hyeng Lee , Seon-Hee Kim , Gun-Mo Kim , Choong-Ho Lee , Byung-Hee Kim , Kuen-Dong Ha
IPC分类号： G09G5/00 , G09G3/30
CPC分类号： G06F1/1601 , G02F2001/133317 , G02F2001/133342 , G06F1/1616 , G06F1/1637 , G06F1/1647 , G09G2300/023 , H01L25/048 , H01L27/3267 , H01L27/3281 , H01L2924/0002 , H01L2924/00
摘要： A dual display module having a first display panel and a second display panel, the dual display module including a bezel arranged between the first display panel and the second display panel, and having a penetration area between the first display panel and the second display panel; and a supporting member arranged between the bezel and the second display panel and supporting the second display panel, the supporting member having at least one protrusion unit that protrudes through the penetration area to face the first display panel.
摘要翻译：一种具有第一显示面板和第二显示面板的双显示模块，所述双显示模块包括布置在所述第一显示面板和所述第二显示面板之间的边框，并且在所述第一显示面板和所述第二显示面板之间具有穿透区域; 以及布置在所述边框和所述第二显示面板之间并支撑所述第二显示面板的支撑构件，所述支撑构件具有突出穿过所述穿透区域以面对所述第一显示面板的至少一个突出单元。

90. 发明授权

US07465985B2 Non-volatile memory device and methods of forming the same 有权
标题翻译：非易失性存储器件及其形成方法
公开(公告)号：US07465985B2
公开(公告)日：2008-12-16
申请号：US11580086
申请日：2006-10-13
申请人： Byung-Yong Choi , Choong-Ho Lee , Dong-Gun Park
发明人： Byung-Yong Choi , Choong-Ho Lee , Dong-Gun Park
IPC分类号： H01L21/334
CPC分类号： H01L27/115 , H01L27/11519 , H01L27/11526 , H01L27/11529
摘要： A non-volatile memory device and a method of forming the same are provided. The non-volatile memory device may include a cell isolation pattern and a semiconductor pattern sequentially stacked on a predetermined or given region of a semiconductor substrate, a cell gate line on the semiconductor pattern and on a top surface of the semiconductor substrate on one side of the cell isolation pattern, a multi-layered trap insulation layer between the cell gate line and the semiconductor substrate, and the cell gate line and the semiconductor pattern, a first impurity diffusion layer in the semiconductor substrate on both sides of the cell gate line and a second impurity diffusion layer in the semiconductor pattern on both sides of the cell gate line.
摘要翻译：提供了一种非易失性存储器件及其形成方法。非易失性存储器件可以包括依次层叠在半导体衬底的预定或给定区域上的单元隔离图案和半导体图案，半导体图案上的单元栅极线和半导体衬底的一侧的顶表面上的半导体图案电池隔离图案，单元栅极线和半导体衬底之间的多层陷阱绝缘层，以及单元栅极线和半导体图案，在单元栅极线的两侧的半导体衬底中的第一杂质扩散层和位于单元栅极线两侧的半导体图案中的第二杂质扩散层。

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