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81. 发明授权

US08829586B2 Semiconductor device and method for manufacturing semiconductor device having oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的半导体器件和半导体器件的制造方法
公开(公告)号：US08829586B2
公开(公告)日：2014-09-09
申请号：US13014075
申请日：2011-01-26
申请人： Yuta Endo , Takayuki Saito , Shunpei Yamazaki
发明人： Yuta Endo , Takayuki Saito , Shunpei Yamazaki
IPC分类号： H01L29/76 , H01L21/36 , H01L27/12 , H01L21/02 , H01L29/49 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/4908 , H01L29/495 , H01L29/513 , H01L29/517
摘要： In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.
摘要翻译：在小型化晶体管中，需要栅极绝缘层来减小其厚度; 然而，在栅绝缘层是单层氧化硅膜的情况下，由于隧穿电流（即栅极漏电流）的增加，可能会发生栅极绝缘层变薄的物理极限。通过使用栅极绝缘层使用相对介电常数高于或等于10的高k膜，减小了小型化晶体管的栅极漏电流。通过使用高k膜作为相对介电常数高于与氧化物半导体层接触的第二绝缘层的第一绝缘层的第一绝缘层，栅绝缘层的厚度可以比栅的厚度薄根据氧化硅膜考虑的绝缘层。

82. 发明授权

US08549914B2 Sensor structure 有权
标题翻译：传感器结构
公开(公告)号：US08549914B2
公开(公告)日：2013-10-08
申请号：US13218770
申请日：2011-08-26
申请人： Takayuki Saito , Chihiro Kobayashi
发明人： Takayuki Saito , Chihiro Kobayashi
IPC分类号： G01D11/24 , G01L19/14 , G01P1/02
CPC分类号： G01L23/24 , G01F1/68 , G01F1/684
摘要： Provided is a sensor structure capable of improving the reliability of connecting parts of electronic components and achieving excellent productivity and reduction in size and weight, for example, when electronic components are externally mounted on input/output terminals of a sensor. A relationship between a linear expansion coefficient for a housing serving as a base of a structure and a linear expansion coefficient of a resin material for a sensor casing of a sensor to be mounted is set to satisfy “sensor casing
摘要翻译：提供了一种传感器结构，其能够提高电子部件的连接部件的可靠性，并且例如当将电子部件外部安装在传感器的输入/输出端子上时，实现优异的生产率和尺寸和重量的减小。设置作为基底的壳体的线膨胀系数与待安装传感器的传感器壳体的树脂材料的线膨胀系数之间的关系被设定为满足“传感器外壳<线膨胀系数α<外壳 “。当电子部件被外部安装时，电气部件安装在整体形成在具有小的线性膨胀系数的部件侧，即传感器外壳一侧上的输入/输出端子上。

83. 外观设计

USD674301S1 Physical amount sensor for air 有权
标题翻译：物理量传感器用于空气
公开(公告)号：USD674301S1
公开(公告)日：2013-01-15
申请号：US29397276
申请日：2011-07-14
申请人： Takayuki Saito , Hiromu Kikawa , Keiji Hanzawa
设计人： Takayuki Saito , Hiromu Kikawa , Keiji Hanzawa

84. 外观设计

USD644860S1 Centered table leg 有权
标题翻译：中心桌腿
公开(公告)号：USD644860S1
公开(公告)日：2011-09-13
申请号：US29357690
申请日：2010-03-16
申请人： Takayuki Saito
设计人： Takayuki Saito

85. 发明授权

US08017305B2 Pattern forming method, semiconductor device manufacturing method and exposure mask set 有权
标题翻译：图案形成方法，半导体器件制造方法和曝光掩模组
公开(公告)号：US08017305B2
公开(公告)日：2011-09-13
申请号：US12652470
申请日：2010-01-05
申请人： Takeo Ishibashi , Takayuki Saito , Maya Itoh , Shuji Nakao
发明人： Takeo Ishibashi , Takayuki Saito , Maya Itoh , Shuji Nakao
IPC分类号： G03F7/26
CPC分类号： G03F7/70466 , G03F1/00
摘要： First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object to be exposed. A development process is then performed to obtain a resist pattern. A mask for the first exposure process is such that a light blocking pattern is formed on the whole surface of a standard-pattern mask part corresponding to the standard-pattern forming region. A mask for the second exposure is such that a light blocking pattern is formed on the whole surface of a grating-pattern mask part corresponding to the grating-pattern forming region.
摘要翻译：首先，使用仅具有光栅图案形成区域的偶极照明作为要暴露的实质对象来执行第一曝光处理。接下来，仅以标准图案形成区域作为要曝光的实质物体进行第二曝光处理。然后进行显影处理以获得抗蚀剂图案。用于第一曝光处理的掩模使得在对应于标准图案形成区域的标准图案掩模部件的整个表面上形成遮光图案。用于第二曝光的掩模使得在对应于光栅图案形成区域的光栅图案掩模部分的整个表面上形成遮光图案。

86. 外观设计

USD642832S1 Off-center table leg 有权
标题翻译：偏心桌腿
公开(公告)号：USD642832S1
公开(公告)日：2011-08-09
申请号：US29357679
申请日：2010-03-16
申请人： Takayuki Saito
设计人： Takayuki Saito

87. 发明授权

US07982882B2 Optical wave interference measuring apparatus 有权
标题翻译：光波干涉测量仪
公开(公告)号：US07982882B2
公开(公告)日：2011-07-19
申请号：US12571993
申请日：2009-10-01
申请人： Zongtao Ge , Hideo Kanda , Takayuki Saito , Noboru Koizumi
发明人： Zongtao Ge , Hideo Kanda , Takayuki Saito , Noboru Koizumi
IPC分类号： G01B11/02
CPC分类号： G01B11/2441 , G01M11/025 , G01M11/0271
摘要： The relative position of a test surface is sequentially changed from a reference position where a surface central axis is aligned with a measurement optical axis such that the measurement optical axis is sequentially moved to a plurality of annular regions obtained by dividing the test surface in a diametric direction. The test surface is rotated on a rotation axis whenever the relative position is changed. Measurement light that travels while being converged by a Mirau objective interference optical system is radiated to the rotating test surface, and a one-dimensional image sensor captures interference fringes at each of a plurality of rotational positions. The shape information of each annular region is calculated on the basis of the captured interference fringes at each rotational position, and the shape information is connected to calculate the shape information of the entire measurement region.
摘要翻译：测试表面的相对位置从表面中心轴与测量光轴对准的参考位置顺序地改变，使得测量光轴顺序地移动到通过将测试表面分成直径而获得的多个环形区域方向。每当相对位置改变时，测试表面都会在旋转轴上旋转。在由Mirau物镜干涉光学系统会聚的同时行进的测量光被照射到旋转测试表面，并且一维图像传感器在多个旋转位置的每一个处捕获干涉条纹。基于每个旋转位置处的捕获的干涉条纹来计算每个环形区域的形状信息，并且形状信息被连接以计算整个测量区域的形状信息。

88. 发明申请

US20100091299A1 OPTICAL WAVE INTERFERENCE MEASURING APPARATUS 失效
标题翻译：光波干扰测量装置
公开(公告)号：US20100091299A1
公开(公告)日：2010-04-15
申请号：US12578997
申请日：2009-10-14
申请人： Zongtao GE , Hideo Kanda , Takayuki Saito , Noboru Koizumi
发明人： Zongtao GE , Hideo Kanda , Takayuki Saito , Noboru Koizumi
IPC分类号： G01B11/24
CPC分类号： G01M11/0271 , G01M11/025
摘要： The relative position of a test surface is sequentially changed from a reference position where a surface central axis is aligned with a measurement optical axis such that the measurement optical axis is sequentially moved to a plurality of annular regions obtained by dividing the test surface in a diametric direction. The test surface is rotated on a rotation axis whenever the relative position is changed. Measurement light composed of a plane wave is radiated to the rotating test surface, and a one-dimensional image sensor captures interference fringes at each of a plurality of rotational positions. The shape information of each annular region is calculated on the basis of the captured interference fringes at each rotational position, and the shape information is connected to calculate the shape information of the entire measurement region.
摘要翻译：测试表面的相对位置从表面中心轴与测量光轴对准的参考位置顺序地改变，使得测量光轴顺序地移动到通过将测试表面分成直径而获得的多个环形区域方向。每当相对位置改变时，测试表面都会在旋转轴上旋转。由平面波构成的测量光被照射到旋转测试表面，并且一维图像传感器在多个旋转位置中的每一个处捕获干涉条纹。基于每个旋转位置处的捕获的干涉条纹来计算每个环形区域的形状信息，并且形状信息被连接以计算整个测量区域的形状信息。

89. 发明授权

US07563356B2 Composite processing apparatus and method 失效
标题翻译：复合加工设备及方法
公开(公告)号：US07563356B2
公开(公告)日：2009-07-21
申请号：US10549324
申请日：2004-03-12
申请人： Osamu Nabeya , Takayuki Saito , Tsukuru Suzuki , Yasushi Toma , Ikutaro Noji
发明人： Osamu Nabeya , Takayuki Saito , Tsukuru Suzuki , Yasushi Toma , Ikutaro Noji
IPC分类号： C25F3/16 , B23H5/08
CPC分类号： C25F7/00
摘要： A composite processing apparatus which can securely process a conductive material, such as a copper film, at a low surface pressure and a high rate while effectively preventing the formation of pits is disclosed. The composite processing apparatus includes: a substrate holder for holding a substrate; a processing table including a mechanical processing section for processing a surface of the substrate by a processing method involving a mechanical action; and an electrolytic processing section which is separate from the mechanical processing section. The electrolytic processing section includes a processing electrode with an ion exchanger, for processing the substrate by applying a voltage between the processing electrode and the substrate while keeping the ion exchanger (92) in contact with the substrate. The composite processing apparatus also includes a liquid supply section for supplying a liquid between the substrate and the processing electrode, and between the substrate and the mechanical processing section; and a drive section for moving the substrate and the processing table relative to each other.
摘要翻译：公开了一种复合处理装置，其能够在有效地防止凹坑形成的同时，以低表面压力和高速度可靠地处理诸如铜膜的导电材料。复合处理装置包括：用于保持基板的基板保持件; 一种处理台，包括用于通过涉及机械动作的处理方法来处理所述基板的表面的机械处理部分; 以及与机械加工部分开的电解处理部。电解处理部包括具有离子交换器的处理电极，用于通过在保持离子交换器（92）与基板接触的同时在处理电极和基板之间施加电压来处理基板。所述复合处理装置还包括用于在所述基板和所述处理电极之间以及所述基板和所述机械加工部之间供给液体的液体供给部; 以及用于相对于彼此移动所述基板和所述处理台的驱动部。

90. 发明申请

US20090078583A1 Electrochemical mechanical polishing method and electrochemical mechanical polishing apparatus 审中-公开
标题翻译：电化学机械抛光方法和电化学机械抛光装置
公开(公告)号：US20090078583A1
公开(公告)日：2009-03-26
申请号：US12007956
申请日：2008-01-17
申请人： Itsuki Kobata , Akira Kodera , Yasushi Toma , Tsukuru Suzuki , Takayuki Saito , Yuji Makita , Hirokuni Hiyama
发明人： Itsuki Kobata , Akira Kodera , Yasushi Toma , Tsukuru Suzuki , Takayuki Saito , Yuji Makita , Hirokuni Hiyama
IPC分类号： B23H5/06 , B23H11/00 , C25F3/16 , C25F7/00
CPC分类号： C25F3/00 , B23H5/08 , B24B37/013 , B24B49/105 , H01L21/32125
摘要： A composite electrolytic processing method makes it possible to remove a conductive film without leaving it in an electrically-insulated state on an underlying barrier film, thereby exposing the barrier film. The electrochemical mechanical polishing method includes: applying a voltage between a first electrode connected to one pole of a power source and a second electrode, connected to the other pole of the power source, for feeding electricity to a conductive film of a polishing object; filling an electrolytic liquid into a space between the first electrode and the conductive film of the polishing object; and pressing and rubbing the conductive film against a polishing surface of a polishing pad to polish the conductive film in such a manner that a barrier film underlying the conductive film becomes gradually exposed from the center toward the periphery of the polishing object.
摘要翻译：复合电解处理方法使得可以在导电膜上去除导电膜而不会使其在下面的阻挡膜上处于电绝缘状态，从而暴露阻挡膜。电化学机械抛光方法包括：在连接到电源的一个极的第一电极和连接到电源的另一个极的第二电极之间施加电压，用于向抛光对象的导电膜供电; 将电解液体填充到研磨对象物的第一电极和导电膜之间的空间内; 并且将导电膜按压并摩擦抛光垫的抛光表面以使导电膜抛光，使得导电膜下面的阻挡膜从研磨对象的中心逐渐露出。

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