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    • 83. 发明授权
    • High-voltage automatic changeover switch
    • 高压自动切换开关
    • US07679012B2
    • 2010-03-16
    • US11777639
    • 2007-07-13
    • Yaohong LiuYumei ChenHuaping TangJianjun GaoXinshui YanFeng GaoWei JiaXiaotian LiangJinsheng LiuDe WeiWei YinDan ZhangChong GuQinghui Zhang
    • Yaohong LiuYumei ChenHuaping TangJianjun GaoXinshui YanFeng GaoWei JiaXiaotian LiangJinsheng LiuDe WeiWei YinDan ZhangChong GuQinghui Zhang
    • H01H21/18
    • H01H31/20
    • A high-voltage automatic changeover switch, includes a support and a control circuit board mounted on the support. In one embodiment, the support includes an insulating frame, four high-voltage contacts mounted on each of two opposite plates of the insulating frame, four high-voltage contacts on the same plate being pair-to-pair arranged, the high-voltage contacts at the corresponding positions on the two plates being pair-to-pair arranged. A motor is provided on the support, and when switching the high voltages, the control circuit board controls the rotation of the motor to automatically switch the connection relation between the high-voltage contact pairs. Embodiments of the switch have a voltage-resistance of above 50 KV, allowing a pulse current of not less than 500 A to pass through, and good contact performance and a high stability. In one aspect, the high-voltage automatic changeover switch performs automatic switching of power source high voltages in an accelerator system, so that the accelerator obtains electron beams with different energies, thus allowing an expanded scope of application of the accelerator, including updating and upgrading of non-destructive testing systems, custom container inspection systems, and high-energy CT systems.
    • 一种高压自动切换开关,包括支撑件和安装在支撑件上的控制电路板。 在一个实施例中,支撑件包括绝缘框架,安装在绝缘框架的两个相对板板中的每一个上的四个高压触点,同一板上的四个高压触点成对配对,高压触点 在两个板上的对应位置成对配对。 在支架上设有电机,当切换高电压时,控制电路板控制电动机的转动,自动切换高电压触点对之间的连接关系。 开关的实施例具有高于50KV的电压,允许不小于500A的脉冲电流通过,良好的接触性能和高稳定性。 一方面,高压自动切换开关在加速器系统中进行电源高电压的自动切换,使得加速器获得具有不同能量的电子束,从而允许加速器的应用范围扩大,包括更新和升级 非破坏性测试系统,定制容器检查系统和高能CT系统。
    • 85. 发明申请
    • Method For Implementing Unified Authentication
    • 实现统一认证的方法
    • US20090217366A1
    • 2009-08-27
    • US11920565
    • 2005-12-08
    • Feng GaoShuaimin YeLei HongYanxia ChenHuiming Li
    • Feng GaoShuaimin YeLei HongYanxia ChenHuiming Li
    • H04L9/32
    • H04L63/0815H04L9/3213
    • A method for implementing unified authentication for user logon, the method comprising the steps of: establishing an authentication server; creating a user authentication account number in the authentication server; storing user information which the user uses in a plurality of systems into the authentication server; associating, in the authentication server, the created user authentication account number with the user information which the user uses in the plurality of systems; and providing an authentication flag to the client of the user by the authentication server based on the association between the user authentication account number and the user information which the user uses in the plurality of systems established in the authentication server so that the user can log on the plurality of systems using the authentication flag. The present invention is applied to provide a unified mechanism of user logon authentication in integration and mergence of the service processes provided by a plurality of Internet information systems or Internet providers, and thus the user can access all authorized application systems or service providers with only one logon authentication.
    • 一种用于实现用户登录的统一认证的方法,所述方法包括以下步骤:建立认证服务器; 在认证服务器中创建用户认证帐号; 将用户在多个系统中使用的用户信息存储到认证服务器中; 在所述认证服务器中,将所创建的用户认证帐号与所述用户在所述多个系统中使用的用户信息相关联; 并且基于用户认证帐号与用户在认证服务器中建立的多个系统中使用的用户信息之间的关联,由认证服务器向用户提供认证标志,使得用户可以登录 所述多个系统使用所述认证标志。 本发明应用于在多个因特网信息系统或因特网提供商提供的服务过程的集成和合并中提供用户登录认证的统一机制,因此用户只能访问所有授权的应用系统或服务提供商 登录认证。
    • 89. 发明申请
    • Integrated Semiconductor Metal-Insulator-Semiconductor Capacitor
    • 集成半导体金属绝缘体 - 半导体电容器
    • US20090096507A1
    • 2009-04-16
    • US12270604
    • 2008-11-13
    • Feng GaoChangyuan ChenVishal SarinWilliam John SaikiHieu Van TranDana Lee
    • Feng GaoChangyuan ChenVishal SarinWilliam John SaikiHieu Van TranDana Lee
    • H03K3/01
    • H01L27/0805H01L27/0811H01L29/94
    • An integrated MIS capacitor has two substantially identical MIS capacitors. A first capacitor comprises a first region of a first conductivity type adjacent to a channel region of the first conductivity type in a semiconductor substrate. The semiconductor substrate has a second conductivity type. A gate electrode is insulated and spaced apart from the channel region of the first capacitor. The second capacitor is substantially identical to the first capacitor and is formed in the same semiconductor substrate. The gate electrode of the first capacitor is electrically connected to the first region of the second capacitor and the gate electrode of the second capacitor is electrically connected to the first region of the first capacitor. In this manner, the capacitors are connected in an anti-parallel configuration. A capacitor which has high capacitance densities, low process complexity, ambipolar operation, low voltage and temperature coefficient, low external parasitic resistance and capacitance and good matching characteristics for use in analog designs that can be integrated with existing semiconductor processes results.
    • 集成的MIS电容器具有两个基本相同的MIS电容器。 第一电容器包括在半导体衬底中与第一导电类型的沟道区相邻的第一导电类型的第一区域。 半导体衬底具有第二导电类型。 栅电极与第一电容器的沟道区隔离并隔开。 第二电容器基本上与第一电容器相同,并且形成在相同的半导体衬底中。 第一电容器的栅电极电连接到第二电容器的第一区域,并且第二电容器的栅极电连接到第一电容器的第一区域。 以这种方式,电容器以反并联配置连接。 具有高电容密度,低工艺复杂性,双极性操作,低电压和温度系数,低外部寄生电阻和电容以及用于可与现有半导体工艺结合的模拟设计的良好匹配特性的电容器。