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81. 发明授权

US07000139B2 Interface circuit for selectively latching between different sets of address and data registers based on the transitions of a frequency-divided clock 失效
标题翻译：接口电路，用于基于分频时钟的转换来选择性地在不同地址和数据寄存器组之间锁存
公开(公告)号：US07000139B2
公开(公告)日：2006-02-14
申请号：US10229173
申请日：2002-08-28
申请人： Satoru Araki
发明人： Satoru Araki
IPC分类号： G06F1/04
CPC分类号： G11C7/222 , G11C7/1006 , G11C7/22 , G11C8/00 , H03K5/135
摘要： An interface circuit includes a frequency divider which divides a frequency of a base clock to provide frequency-divided clock signals; a first address register which stores an address signal at a timing in which the frequency-divided clock signal is turned to high; a second address register which stores the address signal at a timing in which the clock signal is turned to low; a first data register which stores a data signal at a timing in which the clock signal is turned to high; and a second data register which stores the data signal at a timing in which the clock signal is turned to low. The data signals stored in the first and second data registers are selectively outputted.
摘要翻译：接口电路包括分频器，其分频基频时钟以提供分频时钟信号; 第一地址寄存器，其在分频时钟信号变为高的定时存储地址信号; 第二地址寄存器，其在时钟信号变为低的定时存储地址信号; 第一数据寄存器，其在时钟信号变为高的定时存储数据信号; 以及第二数据寄存器，其在时钟信号变为低电平的定时存储数据信号。选择性地输出存储在第一和第二数据寄存器中的数据信号。

82. 发明授权

US06983928B2 Acceleration apparatus for carburetor 有权
标题翻译：化油器加速装置
公开(公告)号：US06983928B2
公开(公告)日：2006-01-10
申请号：US10652828
申请日：2003-08-28
申请人： Satoru Araki
发明人： Satoru Araki
IPC分类号： F02M7/08 , F02M9/02
CPC分类号： F02M7/08 , F02M17/04
摘要： An accelerator for a carburetor that is linked to a throttle valve and allows a piston-type accelerator pump to be operated in a simple configuration that dispenses with a link mechanism and does not greatly enlarge the carburetor. The lower surface of a throttle valve lever (10) is provided with a cam (33) that has a circular shape centered about a throttle valve stem (8) and is configured such that the cam surface (33A) thereof faces a carburetor main body (1). An accelerator pump (25) is placed parallel to the throttle valve stem (8) and the upper end of a piston rod (28) thereof is brought into contact with the cam surface (33A). The cam (33) pushes the piston rod (28) down as the throttle valve lever (10) swings in the opening direction of the throttle valve, and the acceleration fuel in the pump chamber (29) is delivered and supplied to the suction channel (2).
摘要翻译：一种与节流阀连接的化油器的加速器，并且允许活塞式加速泵以简单的结构操作，省去了连杆机构，并且不会大大地扩大化油器。节气门杆（10）的下表面设置有以节流阀杆（8）为中心的圆形的凸轮（33），并且构造成使得其凸轮面（33A）面向化油器主体身体（1）。一个加速泵（25）平行于节流阀杆（8）放置，其活塞杆（28）的上端与凸轮表面（33A）接触。当节气门杆（10）在节流阀的打开方向上摆动时，凸轮（33）向下推动活塞杆（28），并且泵室（29）中的加速燃料被输送并提供给抽吸通道（2）。

83. 发明授权

US06950486B2 Delay apparatus and method 有权
标题翻译：延迟装置和方法
公开(公告)号：US06950486B2
公开(公告)日：2005-09-27
申请号：US09808941
申请日：2001-03-16
申请人： Satoru Araki
发明人： Satoru Araki
IPC分类号： H03K5/00 , H03K5/135 , H04L7/02
CPC分类号： H03K5/135 , H03K2005/00247
摘要： A delay apparatus delays a rising edge and a falling edge of a digital signal. The delay apparatus includes a first edge detection circuit which detects a first edge or rising edge of the digital signal and generates a detection signal; a set circuit that includes a first counter for generating a count value and clearing the count value in response to the detection signal, wherein the set circuit generates a set signal if the count value reaches the number of the reference clock signals corresponding to the delay period of time; a reset circuit which generates a reset signal if an elapsed period of time since a generation of the set signal equals a period of time the digital signal maintains the second logic level; and an output circuit that outputs a delayed digital signal including edges synchronized with the set signal and the reset signal.
摘要翻译：延迟装置延迟数字信号的上升沿和下降沿。延迟装置包括检测数字信号的第一边缘或上升沿并产生检测信号的第一边沿检测电路; 设置电路，其包括用于产生计数值并响应于检测信号清除计数值的第一计数器，其中如果计数值达到对应于延迟周期的参考时钟信号的数量，则设置电路产生设置信号的时间如果从所述设定信号的生成起经过的时间段等于所述数字信号维持所述第二逻辑电平的时间段，则产生复位信号的复位电路; 以及输出电路，其输出包括与设定信号和复位信号同步的边沿的延迟数字信号。

84. 发明授权

US06943998B2 Tunnel magnetoresistive effective element, and a thin film magnetic head, a magnetic head device and a magnetic disk drive device using same 有权
标题翻译：隧道磁阻有效元件，薄膜磁头，磁头装置和使用该磁头的磁盘驱动装置
公开(公告)号：US06943998B2
公开(公告)日：2005-09-13
申请号：US09824060
申请日：2001-04-03
申请人： Koji Shimazawa , Tsuyoshi Umehara , Satoru Araki
发明人： Koji Shimazawa , Tsuyoshi Umehara , Satoru Araki
IPC分类号： G11B5/31 , G11B5/012 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A tunnel magnetoresistive effective element has a ferromagnetic tunnel effective film with a free layer, a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer, a magnetic bias means, a first conductive layer, and a second conductive layer. The magnetic bias means apply a bias magnetic field to the free layer of the ferromagnetic tunnel effective film. The first conductive layer and the second conductive layer generate magnetic fields having the same direction as that of the bias magnetic field through a sense current therein to reinforce the bias magnetic field.
摘要翻译：隧道磁阻有效元件具有铁磁隧道有效膜，其具有夹在自由层和被钉扎层之间的自由层，钉扎层和隧道势垒层，磁偏置装置，第一导电层和第二导电层。磁偏置装置对铁磁隧道有效膜的自由层施加偏置磁场。第一导电层和第二导电层通过其中的感测电流产生具有与偏置磁场相同方向的磁场，以加强偏置磁场。

85. 发明授权

US06710987B2 Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes 有权
标题翻译：具有通过多层多氧化工艺形成的隧道势垒的磁隧道结读头装置
公开(公告)号：US06710987B2
公开(公告)日：2004-03-23
申请号：US09903697
申请日：2001-07-13
申请人： Jijun Sun , Satoru Araki
发明人： Jijun Sun , Satoru Araki
IPC分类号： G11B539
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/307
摘要： A magnetic tunnel junction device and method for making same is provided. A first ferromagnetic portion is provided. A barrier is provided on the first ferromagnetic portion. The barrier includes a first barrier portion on the first ferromagnetic portion. The first barrier portion is oxidized. After oxidizing, a second barrier portion is provided on the first barrier portion. The second barrier may be oxidized or annealed. A second ferromagnetic portion is provided on the barrier. The barrier of the resultant device has a reduced number of pinholes, minimizing the amount of the non-tunnel current, and an improved symmetry of electrical properties. This leads to advantages in performance characteristics and mass-production of the device.
摘要翻译：提供一种磁性隧道结装置及其制造方法。提供第一铁磁部分。在第一铁磁部分上设有屏障。阻挡层包括在第一铁磁部分上的第一阻挡部分。第一阻挡部分被氧化。氧化后，在第一阻挡部上设置第二阻挡部。第二屏障可以被氧化或退火。第二铁磁部分设置在屏障上。所得器件的屏障具有减少的针孔数量，使非隧道电流的量最小化以及电特性的改善的对称性。这导致了器件的性能特征和批量生产的优点。

86. 发明授权

US06704175B2 Current perpendicular-to-the-plane magnetoresistance read head 失效
标题翻译：电流垂直于平面的磁阻读头
公开(公告)号：US06704175B2
公开(公告)日：2004-03-09
申请号：US09903698
申请日：2001-07-13
申请人： Shuxiang Li , Satoru Araki
发明人： Shuxiang Li , Satoru Araki
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/0008
摘要： A magnetoresistive (MR) head including, for example, a spin valve (SV) MR element having a sense current passing through the SV in a current-perpendicular-to-the-plane (CPP) mode. A free layer of the SV is transversely biased by a magnetostatic coupling field from an in-stack transverse bias layer. The transverse bias layer is separated from the free layer by a nonmagnetic high resistive spacer layer, which can cause strong spin memory loss and also provide a longitudinal biasing to the free layer of the SV. An out of stack longitudinal bias arrangement may alternatively be provided to impart a longitudinal bias to the free layer. The SV MR element comprises a MR promoting (MRP) layer either within in or adjacent to the free layer 90 or the pinned layer 110 This MR head structure provides enhanced linearity of the response to the magnetic field being sensed.
摘要翻译：磁阻（MR）磁头包括例如具有在电流垂直于平面（CPP）模式中通过SV的感测电流的自旋阀（SV）MR元件。 SV的自由层由叠层横向偏置层的静磁耦合场横向偏置。横向偏置层通过非磁性高电阻间隔层与自由层分离，这可能导致强的自旋记忆损失，并且还向SV的自由层提供纵向偏置。堆叠纵向偏置装置可以替代地提供以向纵向偏置赋予自由层。 SV MR元件包括在自由层90内或邻近自由层90或被钉扎层110中的MR促进（MRP）层。该MR头结构提供对被感测的磁场的响应的增强的线性。

87. 发明授权

US06603642B1 MAGNETIC TRANSDUCER HAVING A PLURALITY OF MAGNETIC LAYERS STACKED ALTERNATELY WITH A PLURALITY OF NONMAGNETIC LAYERS AND A FIXED-ORIENTATION-OF-MAGNETIZATION LAYER AND THIN FILM MAGNETIC HEAD INCLUDING THE MAGNETIC TRANSDUCER 失效
标题翻译：具有多层非磁性层的磁性层的磁性传感器和包括磁性传感器的固定磁化层和薄膜磁头组成的磁性层的磁性传感器
公开(公告)号：US06603642B1
公开(公告)日：2003-08-05
申请号：US09685891
申请日：2000-10-11
申请人： Satoru Araki , Koji Shimazawa
发明人： Satoru Araki , Koji Shimazawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/398 , G11B2005/3996
摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head using the same, which can be manufactured by a simple manufacturing process and can obtain good output. The thin film magnetic head has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. A layer having the fixed orientation of magnetization is formed on at least one side of the stack in the direction of stacking. The layer has a stacked structure comprising an antiferromagnetic layer and an exchange coupling layer exchange coupling with the antiferromagnetic layer. The magnetic layers of the stack are changed into a single magnetic domain by a magnetic field generated by exchange coupling between the antiferromagnetic layer and the exchange coupling layer so as to prevent Barkhausen noise. Since the layer is formed on at least one side of the stack in the direction of stacking, a manufacturing process is simplified.
摘要翻译：本发明的目的是提供一种使用其的磁换能器和薄膜磁头，其可以通过简单的制造过程制造并且可以获得良好的输出。薄膜磁头具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。具有固定的磁化取向的层在层叠方向的至少一侧上形成。该层具有包括反铁磁层和与反铁磁层交换耦合的交换耦合层的堆叠结构。通过由反铁磁层和交换耦合层之间的交换耦合产生的磁场将堆叠的磁层变成单个磁畴，以防止巴克豪森噪声。由于层在层叠方向的至少一侧上形成，因此简化了制造工序。

88. 发明授权

US06483675B1 Tunnel magnetoresistance effect element 有权
标题翻译：隧道磁阻效应元件
公开(公告)号：US06483675B1
公开(公告)日：2002-11-19
申请号：US09538470
申请日：2000-03-30
申请人： Satoru Araki , Koji Shimazawa , Haruyuki Morita
发明人： Satoru Araki , Koji Shimazawa , Haruyuki Morita
IPC分类号： G11B582
CPC分类号： H01L43/08 , G11B5/3903 , Y10T428/24355
摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, three indexes representing a surface roughness state of the tunnel barrier layer are set such that Ra≦1 nm, Rmax≦10 nm and Rrms≦1.2 nm, wherein Ra is one of the three indexes and representing the center line average roughness, Rmax is one of the three indexes and representing the maximum height, and Rrms is one of the three indexes and representing the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.
摘要翻译：在隧道磁阻效应元件中，包括具有隧道势垒层的隧道多层膜，铁磁自由层和铁磁性钉扎层，使得隧道势垒层保持在铁磁性自由层和铁磁性钉扎层之间，表示表面的三个指标设置隧道阻挡层的粗糙度状态使得Ra <= 1nm，Rmax <= 10nm和Rrms <= 1.2nm，其中Ra是三个指标之一并且表示中心线平均粗糙度，Rmax是三个指标，代表最大高度，Rrms是三个指标之一，代表标准差粗糙度。因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

89. 发明授权

US06335081B1 Tunnel magnetoresistance effect element 有权
标题翻译：隧道磁阻效应元件
公开(公告)号：US06335081B1
公开(公告)日：2002-01-01
申请号：US09621088
申请日：2000-07-21
申请人： Satoru Araki , Koji Shimazawa , Haruyuki Morita
发明人： Satoru Araki , Koji Shimazawa , Haruyuki Morita
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/7325 , G11B5/8404 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , Y10S428/90 , Y10T428/1114 , Y10T428/1171 , Y10T428/24355
摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film on an under layer, the tunnel multilayered film has a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, wherein three indexes representing a surface roughness state of a surface, which faces the tunnel multilayered film, of the under layer are set such that Ra ≦0.5 nm, Rmax ≦5 nm and Rrms ≦0.55 nm, wherein Ra is one of the three indexes and represents the center line average roughness, Rmax is one of the three indexes and represents the maximum height, and Rrms is one of the three indexes and represents the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.
摘要翻译：隧道磁阻效应元件包括在下层上的隧道多层膜，隧道多层膜具有隧道势垒层，铁磁自由层和铁磁性钉扎层，使隧道势垒层保持在铁磁自由层和铁磁性钉扎层，其中表示下层的面向隧道多层膜的表面的表面粗糙度状态的三个指标被设置为使得Ra <= 0.5nm，Rmax <= 5nm和Rrms <= 0.55nm，其中 Ra是三个指标之一，代表中心线平均粗糙度，Rmax是三个指标之一，代表最大高度，Rrms是三个指标之一，代表标准偏差粗糙度。因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

90. 发明授权

US06255814B1 Method and apparatus for measuring bias magnetic field for controlling magnetic domain of magnetoresistive effect element 有权
标题翻译：用于测量用于控制磁阻效应元件的磁畴的偏磁场的方法和装置
公开(公告)号：US06255814B1
公开(公告)日：2001-07-03
申请号：US09368672
申请日：1999-08-05
申请人： Koji Shimazawa , Satoru Araki
发明人： Koji Shimazawa , Satoru Araki
IPC分类号： G01R3302
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B5/455 , G11B2005/0008 , G11B2005/3996
摘要： A method for measuring bias magnetic field for controlling magnetic domain (longitudinal bias magnetic field) of a MR element has the step of applying an external measurement magnetic field onto the MR element which is biased with the magnetic field for controlling the magnetic domain (longitudinal bias magnetic field) in parallel to the direction of the bias magnetic field, the step of measuring &rgr;-H loop of the MR element (output resistance of MR element versus magnetic field strength loop) under the application of the external measurement magnetic field, and the step of determining a shifted amount of the measured &rgr;-H loop.
摘要翻译：用于测量用于控制MR元件的磁畴（纵向偏置磁场）的偏置磁场的方法具有将外部测量磁场施加到MR元件上的步骤，所述MR元件被用于控制磁畴的磁场偏置（纵向偏置磁场）平行于偏置磁场的方向，在外部测量磁场的应用下测量MR元件的rho-H环（MR元件的输出电阻与磁场强度回路）的步骤，以及确定所测量的rho-H环的位移量的步骤。

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