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1. 发明授权

US06710987B2 Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes 有权
标题翻译：具有通过多层多氧化工艺形成的隧道势垒的磁隧道结读头装置
公开(公告)号：US06710987B2
公开(公告)日：2004-03-23
申请号：US09903697
申请日：2001-07-13
申请人： Jijun Sun , Satoru Araki
发明人： Jijun Sun , Satoru Araki
IPC分类号： G11B539
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/307
摘要： A magnetic tunnel junction device and method for making same is provided. A first ferromagnetic portion is provided. A barrier is provided on the first ferromagnetic portion. The barrier includes a first barrier portion on the first ferromagnetic portion. The first barrier portion is oxidized. After oxidizing, a second barrier portion is provided on the first barrier portion. The second barrier may be oxidized or annealed. A second ferromagnetic portion is provided on the barrier. The barrier of the resultant device has a reduced number of pinholes, minimizing the amount of the non-tunnel current, and an improved symmetry of electrical properties. This leads to advantages in performance characteristics and mass-production of the device.
摘要翻译：提供一种磁性隧道结装置及其制造方法。提供第一铁磁部分。在第一铁磁部分上设有屏障。阻挡层包括在第一铁磁部分上的第一阻挡部分。第一阻挡部分被氧化。氧化后，在第一阻挡部上设置第二阻挡部。第二屏障可以被氧化或退火。第二铁磁部分设置在屏障上。所得器件的屏障具有减少的针孔数量，使非隧道电流的量最小化以及电特性的改善的对称性。这导致了器件的性能特征和批量生产的优点。

2. 发明授权

US06574079B2 Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys 失效
公开(公告)号：US06574079B2
公开(公告)日：2003-06-03
申请号：US09903696
申请日：2001-07-13
申请人： Jijun Sun , Satoru Araki
发明人： Jijun Sun , Satoru Araki
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01L43/12 , Y10S428/90
摘要： A magnetic tunnel junction is made up of two ferromagnetic layers, one of which has its magnetic moment fixed and the other of which has its magnetic moment free to rotate, an insulating tunneling barrier layer between the ferromagnetic layers for permitting tunneling current perpendicularly through the layers. The insulating barrier is preferably formed by the oxidation of a thin metallic alloy layer of particular materials which lead to a nonmagnetic barrier having a relatively low barrier height. These low barrier height insulating materials allow for the formation of a magnetic tunnel junction with a relatively thick barrier while maintaining a low resistance that is suitable, for example, in magnetoresistance read head applications.

3. 发明申请

US20140217528A1 SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME 有权
标题翻译：旋转磁阻记忆元件及其制造方法
公开(公告)号：US20140217528A1
公开(公告)日：2014-08-07
申请号：US14219532
申请日：2014-03-19
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

4. 发明授权

US08216703B2 Magnetic tunnel junction device 有权
标题翻译：磁隧道连接装置
公开(公告)号：US08216703B2
公开(公告)日：2012-07-10
申请号：US12035011
申请日：2008-02-21
申请人： Jijun Sun , Jon M. Slaughter
发明人： Jijun Sun , Jon M. Slaughter
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic tunnel junction (MTJ) (10) employing a dielectric tunneling barrier (16), useful in magnetoresistive random access memories (MRAMs) and other devices, has a synthetic antiferromagnet (SAF) structure (14, 16), comprising two ferromagnetic (FM) layers (26, 41; 51, 58; 61, 68) separated by a coupling layer (38, 56, 66). Improved magnetoresistance (MR) ratio is obtained by providing a further layer (44, 46, 46′, 47, 52, 62), e.g. containing Ta, preferably spaced apart from the coupling layer (38, 56, 66) by a FM layer (41, 30-2, 54). The further layer (44, 46, 46′, 47, 52, 62) may be a Ta dusting layer (44) covered by a FM layer (30-2), or a Ta containing FM alloyed layer (46), or a stack (46′) of interleaved FM and N-FM layers, or other combination (47, 62). Furthering these benefits, another FM layer, e.g., CoFe, NiFe, (30, 30-1, 51, 61) is desirably provided between the further layer (44, 46, 46′, 47, 52, 62) and the tunneling barrier (16). Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr, NiFeX, CoFeX and CoFeBX (X═Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr) are useful for the further layer (44, 46, 46′, 47, 52, 62).
摘要翻译：采用磁阻随机存取存储器（MRAM）和其它器件的电介质隧道势垒（16）的磁性隧道结（MTJ）（10）具有合成的反铁磁（SAF）结构（14,16），包括两个铁磁（ FM）层（26,41; 51,58; 61,68），由耦合层（38,56,66）分隔开。通过提供另外的层（44,46,46'，47,52,62），例如，可以获得改善的磁阻（MR）比。含有Ta，优选地通过FM层（41,30-2,54）与耦合层（38,56,66）间隔开。另外的层（44,46,46'，47,52,62）可以是由FM层（30-2）或含Ta的FM合金层（46）覆盖的Ta粉化层（44），或交错FM和N-FM层的叠层（46'），或其他组合（47,62）。进一步提高这些益处，期望地在另一层（44,46,46'，47,52,62）和隧道势垒之间提供另一个FM层，例如CoFe，NiFe（30,30-1,51,61）（16）。 Ta，Zr，Hf，Ti，Mg，Nb，V，Zn，Cr，NiFeX，CoFeX和CoFeBX（X = Ta，Zr，Hf，Ti，Mg，Nb，V，Zn，Cr）（44,46,46'，47,52,62）。

5. 发明授权

US07572645B2 Magnetic tunnel junction structure and method 失效
标题翻译：磁隧道结结构及方法
公开(公告)号：US07572645B2
公开(公告)日：2009-08-11
申请号：US11601129
申请日：2006-11-15
申请人： Jijun Sun , Renu W. Dave , Jason A. Janesky , Jon M. Slaughter
发明人： Jijun Sun , Renu W. Dave , Jason A. Janesky , Jon M. Slaughter
IPC分类号： H01L29/76
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/08
摘要： Methods and apparatus are provided for magnetic tunnel junctions (MTJs) (10, 50) employing synthetic antiferromagnet (SAF) free layers (14, 14′). The MTJ (10, 50) comprises a pinned ferromagnetic (FM) layer (32, 18), the SAF (14) and a tunneling barrier (16) therebetween. The SAF (14) has a first higher spin polarization FM layer (30) proximate the tunneling barrier (16) and a second FM layer (26) desirably separated from the first FM layer (30) by a coupling layer (28), with magnetostriction adapted to compensate the magnetostriction of the first FM layer (30). Such compensation reduces the net magnetostriction of the SAF (14) to near zero even with high spin polarization proximate the tunneling barrier (16). Higher magnetoresistance ratios (MRs) are obtained without adverse affect on other MTJ (10, 50) properties. NiFe combinations are desirable for the first (30) and second (26) free FM layers, with more Fe in the first (30) free layer and less Fe in the second (26) free layer. CoFeB and NiFeCo are also useful in the free layers.
摘要翻译：提供了使用合成反铁磁（SAF）自由层（14,14'）的磁隧道结（MTJ）（10,50）的方法和装置。 MTJ（10,50）包括钉扎铁磁（FM）层（32,18），SAF（14）和它们之间的隧道势垒（16）。 SAF（14）具有靠近隧道势垒（16）的第一高自旋极化FM层（30）和期望地通过耦合层（28）从第一FM层（30）分离的第二FM层（26），其中，磁致伸缩适于补偿第一FM层（30）的磁致伸缩。即使在靠近隧道势垒（16）的高自旋极化下，这种补偿也将SAF（14）的净磁致伸缩降低到接近于零。获得更高的磁阻比（MRs），而不影响其他MTJ（10,50）性能。对于第一（30）和第二（26）自由的FM层，NiFe组合是理想的，在第一（30）自由层中具有更多的Fe，在第二（26）自由层中具有更少的Fe。 CoFeB和NiFeCo也可用于自由层。

6. 发明授权

US07226796B2 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 失效
标题翻译：在MRAM技术中用于MTJ的合成反铁磁体结构
公开(公告)号：US07226796B2
公开(公告)日：2007-06-05
申请号：US11182149
申请日：2005-07-15
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由被耦合层隔开的两个铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

7. 发明授权

US06946697B2 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 有权
标题翻译：在MRAM技术中用于MTJ的合成反铁磁体结构
公开(公告)号：US06946697B2
公开(公告)日：2005-09-20
申请号：US10740338
申请日：2003-12-18
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
IPC分类号： G11C11/16 , H01L29/76 , H01L31/113 , H01L43/08
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由两个被耦合层隔开的铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

8. 发明授权

US06801415B2 Nanocrystalline layers for improved MRAM tunnel junctions 有权
公开(公告)号：US06801415B2
公开(公告)日：2004-10-05
申请号：US10232111
申请日：2002-08-30
申请人： Jon M. Slaughter , Renu W. Dave , Jijun Sun
发明人： Jon M. Slaughter , Renu W. Dave , Jijun Sun
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01F41/302 , Y10T29/49044
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer, and fixed layer.

9. 发明授权

US08686484B2 Spin-torque magnetoresistive memory element and method of fabricating same 有权
标题翻译：自旋扭矩磁阻存储元件及其制造方法
公开(公告)号：US08686484B2
公开(公告)日：2014-04-01
申请号：US13158171
申请日：2011-06-10
申请人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L21/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

10. 发明申请

US20050247964A1 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 失效
公开(公告)号：US20050247964A1
公开(公告)日：2005-11-10
申请号：US11182149
申请日：2005-07-15
申请人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , Jijun Sun
发明人： Srinivas Pietambaram , Renu Dave , Jon Slaughter , Jijun Sun
IPC分类号： G11C11/16 , H01L29/76 , H01L31/113 , H01L43/08
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.

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