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1. 发明授权

US06473257B1 Method and apparatus for measuring characteristics of ferromagnetic tunnel magnetoresistance effect element, and hard disk drive 有权
标题翻译：用于测量铁磁隧道磁阻效应元件和硬盘驱动器特性的方法和装置
公开(公告)号：US06473257B1
公开(公告)日：2002-10-29
申请号：US09542996
申请日：2000-04-04
申请人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
发明人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
IPC分类号： G11B503
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/012 , G11B5/3909 , G11B5/455
摘要： The present invention relates to a method for measuring characteristics of a tunnel magnetoresistance effect element having a tunnel multilayered film comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween. This method comprises the steps of setting an initial current value I0 which does not destroy the element to be measured, measuring, using the current value I0, a first resistance value R1 as an approximate resistance value of the element, defining, based on the first resistance value R1 and a voltage value Vs which is a measurement standard for the element, an inspection current value Is (Is=Vs/R1), and measuring characteristics of the element using the inspection current value Is. Therefore, “without damaging or destroying elements” and “in an effective way”, the characteristics of the element can be measured.
摘要翻译：本发明涉及一种用于测量具有隧道多层膜的隧道磁阻效应元件的特性的方法，所述隧道多层膜包括隧道势垒层和形成为将隧道势垒层夹在其间的第一和第二铁磁层。该方法包括以下步骤：使用电流值I0来测量不破坏待测元素的初始电流值I0，将第一电阻值R1设定为元件的近似电阻值，基于第一电阻值R1和作为元件的测量标准的电压值Vs，检查电流值Is（Is = Vs / R1）以及使用检查电流值Is的元件的测量特性。因此，“不破坏或破坏元素”和“有效地”，可以衡量元素的特征。

2. 发明授权

US06469879B1 Magneto-resistive tunnel junction head with biasing elements abutting free layer extended portions 失效
标题翻译：磁阻隧道连接头，其偏置元件抵靠自由层延伸部分
公开(公告)号：US06469879B1
公开(公告)日：2002-10-22
申请号：US09517455
申请日：2000-03-02
申请人： Olivier Redon , Koji Shimazawa , Noriaki Kasahara , Satoru Araki
发明人： Olivier Redon , Koji Shimazawa , Noriaki Kasahara , Satoru Araki
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3932
摘要： Magneto-resistive tunnel junction head having a tunnel multilayered film with a tunnel barrier layer, a ferromagnetic free layer, and a ferromagnetic pinned layer formed as a sandwich. A magnetic field is applied to the free layer in a longitudinal direction by biasing elements at opposite ends, and a length of the free layer is greater than a length of the pinned layer such that the free layer has portions extending beyond opposite ends of the pinned layer. A head output suitable for ultra-high density recording can be obtained with less reduction of TMR ratio. Selection of the biasing element is flexible. A hard material and also an antiferromagnetic material can be selected and the biasing elements can be disposed on either an upper or lower side of the free layer at a desired distance.
摘要翻译：具有隧道势垒层的隧道多层膜，铁磁自由层和形成为三明治形成的铁磁性钉扎层的磁阻隧道结头。磁场通过在相对端偏置元件而沿纵向方向施加到自由层，并且自由层的长度大于被钉扎层的长度，使得自由层具有延伸超过固定的相对端的部分层。可以以较少的TMR比降低获得适合于超高密度记录的头部输出。偏置元件的选择是灵活的。可以选择硬质材料和反铁磁材料，并且偏置元件可以以期望的距离设置在自由层的上侧或下侧。

3. 发明授权

US06294911B1 Measurement method of magnetization direction of magnetoresistive effect devices and measurement apparatus based on the method of TDK corporation 有权
标题翻译：基于该方法的磁阻效应器件和测量装置的磁化方向的测量方法
公开(公告)号：US06294911B1
公开(公告)日：2001-09-25
申请号：US09263778
申请日：1999-03-05
申请人： Koji Shimazawa , Nozomu Hachisuka , Manabu Ohta , Tetsuro Sasaki , Satoru Araki
发明人： Koji Shimazawa , Nozomu Hachisuka , Manabu Ohta , Tetsuro Sasaki , Satoru Araki
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/455 , G11B2005/0016
摘要： A method of measuring magnetization direction of a MR device, includes a first step of obtaining both maximum electrical resistance values under positive and negative applied measurement magnetic fields onto the MR device biased by anti-ferromagnetic material, a second step of relatively rotating a basic axis of the MR device against a direction of the applied measurement magnetic field until both the maximum resistance values become comparatively the same, and a third step of obtaining a relative rotation angle between the basic axis of the MR device and the direction of the applied measurement magnetic field.
摘要翻译：一种测量MR器件的磁化方向的方法包括：在由反铁磁材料偏置的MR器件上的正和负施加的测量磁场下获得最大电阻值的第一步骤，相对旋转基本轴线的第二步骤的MR装置相对于所施加的测量磁场的方向，直到最大电阻值变得相对相同，并且获得MR装置的基本轴线与施加的测量磁体的方向之间的相对旋转角度的第三步骤领域。

4. 发明授权

US06895658B2 Methods of manufacturing a tunnel magnetoresistive element, thin-film magnetic head and memory element 有权
标题翻译：制造隧道磁阻元件，薄膜磁头和存储元件的方法
公开(公告)号：US06895658B2
公开(公告)日：2005-05-24
申请号：US10425741
申请日：2003-04-30
申请人： Koji Shimazawa , Satoru Araki
发明人： Koji Shimazawa , Satoru Araki
IPC分类号： G11B5/39 , G11C11/15 , H01F10/08 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/15 , H01F10/3254 , H01F10/3268 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. The pinned layer and the tunnel barrier layer have sidewalls formed through etching. The TMR element further comprises a deposition layer made of a material that is separated by etching and deposits on the sidewalls and undergoes oxidation.
摘要翻译： TMR元件包括：形成在下间隙层上的自由层; 形成在自由层上的隧道势垒层; 以及形成在隧道势垒层上的钉扎层。被钉扎层和隧道势垒层具有通过蚀刻形成的侧壁。 TMR元件还包括由蚀刻分离并沉积在侧壁上并经历氧化的材料制成的沉积层。

5. 发明授权

US06451215B1 Method of producing magneto-resistive tunnel junction head 失效
标题翻译：产生磁阻隧道连接头的方法
公开(公告)号：US06451215B1
公开(公告)日：2002-09-17
申请号：US09542907
申请日：2000-04-04
申请人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
发明人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
IPC分类号： H01L4300
CPC分类号： B82Y25/00 , H01F10/3254 , H01F10/3268 , H01L43/12
摘要： The present invention relates to a method of producing a magneto-resistive tunnel junction head comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer. The method comprises a laminating step of forming the tunnel barrier layer and a non-magnetic metal protect layer in turn on the ferromagnetic pinned layer, an insulating layer forming step of forming side insulating layers on both sides of a lamination body having the ferromagnetic pinned layer, the tunnel barrier layer and the non-magnetic metal protect layer, a cleaning step of cleaning the surface of the non-magnetic metal protect layer, and a ferromagnetic free layer forming step of forming the ferromagnetic free layer such that the ferromagnetic free layer faces the ferromagnetic pinned layer via the cleaned surface. Therefore, according to the method, the magneto-resistive tunnel junction head is expected to have more improved head characteristics.
摘要翻译：本发明涉及一种制造磁阻隧道结头的方法，其包括具有隧道势垒层，铁磁自由层和铁磁性钉扎层的隧道多层膜，使隧道势垒层保持在铁磁性自由层和铁磁钉扎层。所述方法包括依次在所述铁磁性钉扎层上形成所述隧道势垒层和非磁性金属保护层的层压步骤，在具有所述铁磁性钉扎层的层叠体的两侧形成侧绝缘层的绝缘层形成步骤，隧道势垒层和非磁性金属保护层，清洁非磁性金属保护层的表面的清洁步骤和形成铁磁性自由层的铁磁自由层形成步骤，使得铁磁自由层面向铁磁钉扎层经过清洁的表面。因此，根据该方法，期望磁阻隧道结头具有更多改进的头部特性。

6. 发明授权

US06344954B1 Magneto-resistive tunnel junction head with specific flux guide structure 有权
标题翻译：具有特定磁通导向结构的磁阻隧道结头
公开(公告)号：US06344954B1
公开(公告)日：2002-02-05
申请号：US09517580
申请日：2000-03-02
申请人： Olivier Redon , Koji Shimazawa , Noriaki Kasahara , Satoru Araki
发明人： Olivier Redon , Koji Shimazawa , Noriaki Kasahara , Satoru Araki
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3925 , G11B2005/3996
摘要： The present invention relates to a magneto-resistive tunnel junction head having a tunnel multilayered film composed of a tunnel barrier layer, and a ferromagnetic free layer and a ferromagnetic pinned layer formed to sandwich the tunnel barrier layer therebetween, wherein the ferromagnetic free layer comprises, in an integral fashion, a free layer main portion substantially constituting a part of the tunnel multilayered film, a front flux guide portion extending on a front side of the free layer main portion, and a back flux guide portion extending on a back side thereof, wherein the front flux guide portion constitutes a part of an ABS (Air Bearing Surface), and wherein a width-direction length Lm of the free layer main portion is set greater than a width-direction length Lf of the front flux guide portion and a width-direction length Lb of the back flux guide portion. Thus, there can be provided a magneto-resistive tunnel junction head with improved head performance, in particular, which is excellent in corrosion resistance and can achieve a high and stable head output for adaptation to the ultrahigh density recording using an improved longitudinal bias.
摘要翻译：本发明涉及一种具有由隧道势垒层构成的隧道多层膜和形成为将隧道势垒层夹在其间的铁磁自由层和铁磁性钉扎层的磁阻隧道结头，其中铁磁自由层包括：整体地形成基本上构成隧道多层膜的一部分的自由层主体部分，在自由层主体部分的前侧延伸的前部磁通引导部分和在其后侧延伸的后部磁通引导部分，其特征在于，所述前部磁通导向部构成ABS（空气轴承面）的一部分，其中，所述自由层主体部的宽度方向长度Lm被设定为大于所述前部磁通导向部的宽度方向长度Lf，后通量引导部的宽度方向长度Lb。因此，可以提供具有改进的头部性能的磁阻隧道结头，特别是耐腐蚀性优异，并且可以使用改进的纵向偏压来实现用于适应超高密度记录的高稳定的头部输出。

7. 发明授权

US06219274B1 Ferromagnetic tunnel magnetoresistance effect element and method of producing the same 有权
标题翻译：铁磁隧道磁阻效应元件及其制造方法
公开(公告)号：US06219274B1
公开(公告)日：2001-04-17
申请号：US09438368
申请日：1999-11-12
申请人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
发明人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
IPC分类号： G11C1100
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3268 , H01L43/08 , H01L43/12
摘要： The present invention relates to a ferromagnetic tunnel magnetoresistance effect element having a multilayered structure comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween, wherein the tunnel barrier layer is formed as an oxide film obtained by oxidizing a non-magnetic metal layer according to a radical oxidation method. Thus, there can be obtained a ferromagnetic tunnel magnetoresistance effect element which is excellent in productivity and quality stability and highly excellent in TMR effect.
摘要翻译：铁磁隧道磁阻效应元件本发明涉及一种具有多层结构的铁磁隧道磁阻效应元件，该多层结构包括隧道势垒层和形成为将隧道势垒层夹在其间的第一和第二铁磁层，其中隧道势垒层形成为由根据自由基氧化法氧化非磁性金属层。因此，可以获得生产率和质量稳定性优异并且TMR效果非常优异的铁磁隧道磁阻效应元件。

8. 发明授权

US06943998B2 Tunnel magnetoresistive effective element, and a thin film magnetic head, a magnetic head device and a magnetic disk drive device using same 有权
标题翻译：隧道磁阻有效元件，薄膜磁头，磁头装置和使用该磁头的磁盘驱动装置
公开(公告)号：US06943998B2
公开(公告)日：2005-09-13
申请号：US09824060
申请日：2001-04-03
申请人： Koji Shimazawa , Tsuyoshi Umehara , Satoru Araki
发明人： Koji Shimazawa , Tsuyoshi Umehara , Satoru Araki
IPC分类号： G11B5/31 , G11B5/012 , G11B5/39 , H01F10/32 , H01L43/08 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： A tunnel magnetoresistive effective element has a ferromagnetic tunnel effective film with a free layer, a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer, a magnetic bias means, a first conductive layer, and a second conductive layer. The magnetic bias means apply a bias magnetic field to the free layer of the ferromagnetic tunnel effective film. The first conductive layer and the second conductive layer generate magnetic fields having the same direction as that of the bias magnetic field through a sense current therein to reinforce the bias magnetic field.
摘要翻译：隧道磁阻有效元件具有铁磁隧道有效膜，其具有夹在自由层和被钉扎层之间的自由层，钉扎层和隧道势垒层，磁偏置装置，第一导电层和第二导电层。磁偏置装置对铁磁隧道有效膜的自由层施加偏置磁场。第一导电层和第二导电层通过其中的感测电流产生具有与偏置磁场相同方向的磁场，以加强偏置磁场。

9. 发明授权

US06603642B1 MAGNETIC TRANSDUCER HAVING A PLURALITY OF MAGNETIC LAYERS STACKED ALTERNATELY WITH A PLURALITY OF NONMAGNETIC LAYERS AND A FIXED-ORIENTATION-OF-MAGNETIZATION LAYER AND THIN FILM MAGNETIC HEAD INCLUDING THE MAGNETIC TRANSDUCER 失效
标题翻译：具有多层非磁性层的磁性层的磁性传感器和包括磁性传感器的固定磁化层和薄膜磁头组成的磁性层的磁性传感器
公开(公告)号：US06603642B1
公开(公告)日：2003-08-05
申请号：US09685891
申请日：2000-10-11
申请人： Satoru Araki , Koji Shimazawa
发明人： Satoru Araki , Koji Shimazawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/398 , G11B2005/3996
摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head using the same, which can be manufactured by a simple manufacturing process and can obtain good output. The thin film magnetic head has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. A layer having the fixed orientation of magnetization is formed on at least one side of the stack in the direction of stacking. The layer has a stacked structure comprising an antiferromagnetic layer and an exchange coupling layer exchange coupling with the antiferromagnetic layer. The magnetic layers of the stack are changed into a single magnetic domain by a magnetic field generated by exchange coupling between the antiferromagnetic layer and the exchange coupling layer so as to prevent Barkhausen noise. Since the layer is formed on at least one side of the stack in the direction of stacking, a manufacturing process is simplified.
摘要翻译：本发明的目的是提供一种使用其的磁换能器和薄膜磁头，其可以通过简单的制造过程制造并且可以获得良好的输出。薄膜磁头具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。具有固定的磁化取向的层在层叠方向的至少一侧上形成。该层具有包括反铁磁层和与反铁磁层交换耦合的交换耦合层的堆叠结构。通过由反铁磁层和交换耦合层之间的交换耦合产生的磁场将堆叠的磁层变成单个磁畴，以防止巴克豪森噪声。由于层在层叠方向的至少一侧上形成，因此简化了制造工序。

10. 发明授权

US06483675B1 Tunnel magnetoresistance effect element 有权
标题翻译：隧道磁阻效应元件
公开(公告)号：US06483675B1
公开(公告)日：2002-11-19
申请号：US09538470
申请日：2000-03-30
申请人： Satoru Araki , Koji Shimazawa , Haruyuki Morita
发明人： Satoru Araki , Koji Shimazawa , Haruyuki Morita
IPC分类号： G11B582
CPC分类号： H01L43/08 , G11B5/3903 , Y10T428/24355
摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, three indexes representing a surface roughness state of the tunnel barrier layer are set such that Ra≦1 nm, Rmax≦10 nm and Rrms≦1.2 nm, wherein Ra is one of the three indexes and representing the center line average roughness, Rmax is one of the three indexes and representing the maximum height, and Rrms is one of the three indexes and representing the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.
摘要翻译：在隧道磁阻效应元件中，包括具有隧道势垒层的隧道多层膜，铁磁自由层和铁磁性钉扎层，使得隧道势垒层保持在铁磁性自由层和铁磁性钉扎层之间，表示表面的三个指标设置隧道阻挡层的粗糙度状态使得Ra <= 1nm，Rmax <= 10nm和Rrms <= 1.2nm，其中Ra是三个指标之一并且表示中心线平均粗糙度，Rmax是三个指标，代表最大高度，Rrms是三个指标之一，代表标准差粗糙度。因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

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