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81. 发明授权

US07897419B2 Color correction for wafer level white LEDs 有权
标题翻译：晶圆级白光LED的色彩校正
公开(公告)号：US07897419B2
公开(公告)日：2011-03-01
申请号：US12317528
申请日：2008-12-23
申请人： Matthew Donofrio
发明人： Matthew Donofrio
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/005 , H01L33/44 , H01L33/508 , H01L2933/0041
摘要： A method for fabricating a plurality of LED chips comprises providing a plurality of LEDs and forming a plurality of spacers each of which is on at least one of the LEDs. Coating the LEDs with a conversion material, each of the spacers reducing the amount of conversion material over its one of the LEDs. This reduction causes the plurality of LED chips to emit a wavelength of light in response to an electrical signal that is within a standard deviation of a target wavelength. LEDs, LED chips and LED chip wafers are fabricated using the method according to the present invention. One embodiment of an LED chip wafer according to the present invention comprises a plurality of LEDs on a wafer and a plurality of a spacers, each of which is on a respective one of the LEDs. A conversion material at least partially covers the LEDs and spacers, with at least some light from the LEDs passing through the conversion material and is converted. The spacers cause the LED chips to emit light having a wavelength within a standard deviation compared to the similar LED chips without the spacers where at least some of the LED chips emit light a wavelength of light outside the standard deviation.
摘要翻译：一种用于制造多个LED芯片的方法包括提供多个LED并且形成多个间隔件，每个衬垫位于至少一个LED上。用转换材料涂覆LED，每个间隔物减少其一个LED上的转换材料的量。这种减少使得多个LED芯片响应于在目标波长的标准偏差内的电信号而发出波长的光。使用根据本发明的方法制造LED，LED芯片和LED芯片晶片。根据本发明的LED芯片晶片的一个实施例包括晶片上的多个LED和多个间隔件，每个间隔件在相应的一个LED上。转换材料至少部分地覆盖LED和间隔物，其中来自LED的至少一些光通过转换材料并被转换。间隔物导致LED芯片发射具有标准偏差波长的光，与没有间隔物的类似LED芯片相比，其中至少一些LED芯片发射出超出标准偏差的波长的光。

82. 发明授权

US07829906B2 Three dimensional features on light emitting diodes for improved light extraction 有权
标题翻译：用于改进光提取的发光二极管上的三维特征
公开(公告)号：US07829906B2
公开(公告)日：2010-11-09
申请号：US12030404
申请日：2008-02-13
申请人： Matthew Donofrio
发明人： Matthew Donofrio
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , B23K26/066 , B23K26/40 , B23K2101/40 , B23K2103/50 , B23K2103/52 , H01L33/0095 , H01L33/32 , Y10S438/94
摘要： A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
摘要翻译：公开了一种用于在发光二极管的表面上获得高分辨率透镜图案的方法。该方法包括将可蚀刻材料的图案化牺牲层压印在半导体表面上，该半导体表面又邻近发光有源区，然后蚀刻印刻的牺牲层和下面的半导体以将压印图案转移到邻近的半导体层发光有源区。

83. 发明申请

US20070066039A1 METHODS OF PROCESSING SEMICONDUCTOR WAFERS HAVING SILICON CARBIDE POWER DEVICES THEREON 有权
标题翻译：加工具有硅碳膜电源器件的半导体晶体管的方法
公开(公告)号：US20070066039A1
公开(公告)日：2007-03-22
申请号：US11531975
申请日：2006-09-14
申请人： Anant Agarwal , Sei-Hyung Ryu , Matthew Donofrio
发明人： Anant Agarwal , Sei-Hyung Ryu , Matthew Donofrio
IPC分类号： H01L21/425
CPC分类号： H01L21/0485 , H01L21/0495 , H01L21/268 , H01L29/6606 , Y10S438/931
摘要： Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.
摘要翻译：公开了形成碳化硅半导体器件的方法。所述方法包括在具有第一厚度的碳化硅衬底的第一表面上形成半导体器件，以及将载体衬底安装到碳化硅衬底的第一表面上。载体衬底为碳化硅衬底提供机械支撑。所述方法还包括将碳化硅衬底减薄至小于第一厚度的厚度，在与碳化硅衬底的第一表面相对的稀薄的碳化硅衬底上形成金属层，并局部退火金属层以在其上形成欧姆接触薄碳化硅衬底与碳化硅衬底的第一表面相对。将碳化硅衬底分离以提供单片半导体器件。

84. 发明申请

US20070037307A1 Method of Forming Three-Dimensional Features on Light Emitting Diodes for Improved Light Extraction 有权
标题翻译：在发光二极管上形成三维特征以改进光提取的方法
公开(公告)号：US20070037307A1
公开(公告)日：2007-02-15
申请号：US11461018
申请日：2006-07-31
申请人： Matthew Donofrio
发明人： Matthew Donofrio
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , B23K26/066 , B23K26/40 , B23K2101/40 , B23K2103/50 , B23K2103/52 , H01L33/0095 , H01L33/32 , Y10S438/94
摘要： A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
摘要翻译：公开了一种用于在发光二极管的表面上获得高分辨率透镜图案的方法。该方法包括将可蚀刻材料的图案化牺牲层压印在半导体表面上，该半导体表面又邻近发光有源区，然后蚀刻印刻的牺牲层和下面的半导体以将压印图案转移到邻近的半导体层发光有源区。

85. 发明申请

US20060186418A1 External extraction light emitting diode based upon crystallographic faceted surfaces 有权
公开(公告)号：US20060186418A1
公开(公告)日：2006-08-24
申请号：US11343180
申请日：2006-01-30
申请人： John Edmond , David Slater , Hua Kong , Matthew Donofrio
发明人： John Edmond , David Slater , Hua Kong , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44
摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

86. 发明授权

US09490235B2 Light emitting devices, systems, and methods 有权
标题翻译：发光器件，系统和方法
公开(公告)号：US09490235B2
公开(公告)日：2016-11-08
申请号：US13224850
申请日：2011-09-02
申请人： John A. Edmond , Hua-Shuang Kong , Matthew Donofrio
发明人： John A. Edmond , Hua-Shuang Kong , Matthew Donofrio
IPC分类号： H01L33/54 , H01L25/075 , H01L25/16 , H01L33/52
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译：公开了发光器件，系统和方法。在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。发光装置还可以包括围绕发射区域设置的保持材料。保持材料也可以是不规则形状，并且可以分配。发光器件可以包括每个器件多于一个发射区域。

87. 发明授权

US08686429B2 LED structure with enhanced mirror reflectivity 有权
标题翻译： LED结构具有增强的镜面反射率
公开(公告)号：US08686429B2
公开(公告)日：2014-04-01
申请号：US13168689
申请日：2011-06-24
申请人： Michael Bergmann , Matthew Donofrio , Sten Heikman , Kevin S. Schneider , Kevin W. Haberern , John A. Edmond
发明人： Michael Bergmann , Matthew Donofrio , Sten Heikman , Kevin S. Schneider , Kevin W. Haberern , John A. Edmond
IPC分类号： H01L31/0256
CPC分类号： H01L33/60 , H01L33/08 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip.
摘要翻译：本发明的实施例通常涉及通过减少与镜接触相邻的阻挡层的光吸收效果来改进总发射的LED芯片。在一个实施例中，LED芯片包括一个或多个LED，其中每个LED具有有源区，在有源区下方的第一接触具有高反射镜，以及邻近反射镜的阻挡层。阻挡层比镜子小，使得其不延伸超出反射镜的周边。在另一个可能的实施例中，进一步提供绝缘体，其中绝缘体邻近阻挡层并且反射镜的相邻部分未被有源区域或阻挡层接触。在另一个实施例中，在有源区上提供第二接触。在另一个实施例中，阻挡层小于反射镜，使得反射镜的周边至少不含阻挡层40％，并且第二触点位于第一触点的下方并且可从芯片的底部接近。

88. 发明授权

US08643039B2 Lateral semiconductor Light Emitting Diodes having large area contacts 有权
标题翻译：侧向半导体发光二极管具有大面积接触
公开(公告)号：US08643039B2
公开(公告)日：2014-02-04
申请号：US13023788
申请日：2011-02-09
申请人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
发明人： Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
摘要翻译：发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触该欧姆接触n型层并且还在第一面上延伸。阳极和阴极接触件在第一面上延伸以共同覆盖基本上所有的第一面。可以在触点之间提供小的间隙。

89. 发明申请

US20130299858A1 LIGHT EMITTING DIODE (LED) CONTACT STRUCTURES AND PROCESS FOR FABRICATING THE SAME 有权
标题翻译：发光二极管（LED）接触结构和制造方法
公开(公告)号：US20130299858A1
公开(公告)日：2013-11-14
申请号：US13466590
申请日：2012-05-08
申请人： Pritish Kar , David Beardsley Slater, JR. , Matthew Donofrio , Brad Williams
发明人： Pritish Kar , David Beardsley Slater, JR. , Matthew Donofrio , Brad Williams
IPC分类号： H01L33/62
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382 , H01L2933/0016
摘要： A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.
摘要翻译：发光器件包括被配置为提供由于其中的载流子复合而发光的有源层，有源层上的表面和表面上的导电接触结构。接触结构包括至少一个电镀接触层。接触结构可以包括符合下表面的表面粗糙度的子层，并且电镀接触层可以基本上没有下表面的表面粗糙度。电镀接触层的表面可以是基本上平面的和/或以其它方式构造成反射来自活性层的光发射。还讨论了相关的制造方法。

90. 发明申请

US20130119418A1 METHODS OF FORMING OPTICAL CONVERSION MATERIAL CAPS AND LIGHT EMITTING DEVICES INCLUDING PRE-FORMED OPTICAL CONVERSION MATERIAL CAPS 有权
标题翻译：形成光学转换材料颗粒和发光装置的方法，包括预先形成的光学转换材料CAPS
公开(公告)号：US20130119418A1
公开(公告)日：2013-05-16
申请号：US13293475
申请日：2011-11-10
申请人： Matthew Donofrio , John Edmond , Peter S. Andrews
发明人： Matthew Donofrio , John Edmond , Peter S. Andrews
IPC分类号： H01L33/50 , H01L33/52 , H01J9/22 , B29D11/00 , B29C31/00
CPC分类号： H01L33/505 , B29D11/00894 , H01L33/20 , H01L33/504 , H01L2933/0041
摘要： A method of forming can be provided by applying an optical conversion material to a mold to form a unitary layer of optical conversion material and removing the unitary layer of optical conversion material from the mold.
摘要翻译：可以通过将光学转换材料施加到模具以形成光学转换材料的整体层并从模具中去除整体的光学转换材料层来提供成形方法。

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