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81. 发明授权

US06828605B2 Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component 有权
标题翻译：场效应控制半导体元件以及在垂直配置的半导体元件中制造掺杂层的方法
公开(公告)号：US06828605B2
公开(公告)日：2004-12-07
申请号：US10013997
申请日：2001-12-11
申请人： Ignaz Eisele , Walter Hansch , Christoph Fink , Wolfgang Werner
发明人： Ignaz Eisele , Walter Hansch , Christoph Fink , Wolfgang Werner
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/1045 , H01L29/1095 , H01L29/365 , H01L29/66659 , H01L29/7835
摘要： A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type. The body zone is provided between the source zone and the drain zone. In each case at least a first and a second region of the second conductivity type are provided in a channel zone. The first region has a first doping concentration and the second region has a second doping concentration, which is lower than the first doping concentration. The combination of the two regions produces a semiconductor component threshold voltage greater than zero and the on resistance is lower than that merely due to a channel zone doped with the first or second doping concentration.
摘要翻译：场效应可控半导体元件具有至少一个源极区和至少一个第一导电类型的漏极区和至少一个第二导电类型的体区。体区设置在源区和排水区之间。在每种情况下，第二导电类型的至少第一和第二区域设置在通道区域中。第一区域具有第一掺杂浓度，第二区域具有低于第一掺杂浓度的第二掺杂浓度。两个区域的组合产生大于零的半导体元件阈值电压，并且导通电阻低于仅由掺杂有第一或第二掺杂浓度的沟道区引起的导通电阻。

82. 发明授权

US06824536B2 Substantially serpentine shaped tampon 失效
标题翻译：基本蛇形卫生棉条
公开(公告)号：US06824536B2
公开(公告)日：2004-11-30
申请号：US10150050
申请日：2002-05-16
申请人： Catherine Jean Randall , Charles John Berg, Jr. , Andrea Kollwitz , Angela Alexa Schäfer , Rachel Ann Lawton , Nanda Christine Almond , Wolfgang Werner Hans Domeier , Sybille Fuchs
发明人： Catherine Jean Randall , Charles John Berg, Jr. , Andrea Kollwitz , Angela Alexa Schäfer , Rachel Ann Lawton , Nanda Christine Almond , Wolfgang Werner Hans Domeier , Sybille Fuchs
IPC分类号： A61F1320
CPC分类号： A61F13/2051 , Y10S604/904
摘要： Shaped tampons having varying volumes are provided. A tampon which is formed into a self-sustaining shape has an outer surface, which is substantially serpentine. The tampon also has continually changing volume. The shaped tampons may also have varying average fiber density regions. The shaped tampons may be wrapped in tightly conforming wrappers which optionally aid in maintaining the self-sustaining shape prior to use. Optionally, the shaped tampons may utilize tampon applicators which enable a user to visually see the shape of the tampon prior to use.
摘要翻译：提供了具有不同体积的形状卫生棉条。形成为自维持形状的卫生棉条具有基本上蛇形的外表面。卫生棉条也不断变化。形状的棉塞也可以具有变化的平均纤维密度区域。成形卫生棉条可以包裹在紧密贴合的包装纸中，其任选地有助于在使用之前保持自我维持形状。可选地，成形卫生棉条可以利用棉塞施用器，其使得使用者能够在使用之前在视觉上看到卫生棉条的形状。

83. 发明授权

US06465843B1 MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure 有权
标题翻译：具有沟槽栅电极的MOS晶体管结构和有限的特定导通电阻以及用于制造MOS晶体管结构的方法
公开(公告)号：US06465843B1
公开(公告)日：2002-10-15
申请号：US09701291
申请日：2001-04-27
申请人： Franz Hirler , Wolfgang Werner
发明人： Franz Hirler , Wolfgang Werner
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/1095
摘要： MOS transistor structure having a trench gate electrode and a reduced on resistance, and methods for fabricating a MOS transistor structure A MOS transistor structure having a trench gate electrode and a reduced on resistance is described, the integral of the doping concentration of the body region in the lateral direction between two adjacent drift regions being greater than or equal to the integral of the doping concentration in a drift region in the same lateral direction. Furthermore, methods for fabricating a MOS transistor structure are disclosed, body regions and drift regions being produced by epitaxial growth and implantation, repeated epitaxial growth or by filling trenches with doped conduction material.
摘要翻译：描述了具有沟槽栅电极和导通电阻的MOS晶体管结构以及用于制造MOS晶体管结构的方法具有沟槽栅极和导通电阻的MOS晶体管结构，其中体区的掺杂浓度的积分两个相邻漂移区域之间的横向方向大于或等于在相同横向方向上的漂移区域中的掺杂浓度的积分。此外，公开了用于制造MOS晶体管结构的方法，通过外延生产体区和漂移区生长和植入，重复外延生长或通过用掺杂导电材料填充沟槽。

84. 发明授权

US06417542B2 Field effect-controlled, vertical semiconductor component 有权
标题翻译：场效应控制，垂直半导体元件
公开(公告)号：US06417542B2
公开(公告)日：2002-07-09
申请号：US09867490
申请日：2001-05-30
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0834 , H01L29/1095 , H01L29/41766 , H01L29/456 , H01L29/7395 , H01L29/7397 , H01L29/7813 , H01L29/7832
摘要： The field effect-controlled, vertical semiconductor component is disposed in a semiconductor element and contains at least one internal zone of the first conductivity type, at least one basic zone of the second conductivity type which adjoins the internal zone and a first surface of the semiconductor element, and at least one source zone of the first conductivity type which is disposed in the basic zone. At least one further basic zone of the second conductivity type is spaced apart from the basic zone by an intermediate zone of the first conductivity type, and at least one source contact zone is provided which connects the source zones, the basic zones and the further basic zones to one another with low impedance.
摘要翻译：场效应控制的垂直半导体部件设置在半导体元件中并且包含至少一个第一导电类型的内部区域，第二导电类型的邻接内部区域的至少一个基本区域和半导体的第一表面元件，以及设置在基本区域中的至少一个第一导电类型的源区。第二导电类型的至少一个另外的基本区域通过第一导电类型的中间区域与基本区域间隔开，并且提供至少一个源极接触区域，其连接源极区域，基本区域和进一步的基本区域区域彼此具有低阻抗。

85. 发明授权

US06401544B2 Micromechanical component protected from environmental influences 有权
标题翻译：微机械元件免受环境影响
公开(公告)号：US06401544B2
公开(公告)日：2002-06-11
申请号：US09794664
申请日：2001-02-27
申请人： Robert Aigner , Christofer Hierold , Hergen Kapels , Stefan Kolb , Dieter Maier-Schneider , Klaus-Günter Oppermann , Hans-Jörg Timme , Thomas Scheiter , Wolfgang Werner
发明人： Robert Aigner , Christofer Hierold , Hergen Kapels , Stefan Kolb , Dieter Maier-Schneider , Klaus-Günter Oppermann , Hans-Jörg Timme , Thomas Scheiter , Wolfgang Werner
IPC分类号： G01L900
CPC分类号： G01L9/0042 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81C1/00896 , B81C2201/053 , H01L2924/0002 , H01L2924/00
摘要： A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.
摘要翻译：公开了一种用于制造微机械部件的方法。微机械部件具有传感器孔，其中在将晶片分成芯片之前，在部件上施加至少一个部件保护层和/或间隔涂层。部件保护层至少密封地覆盖平行于晶片表面延伸的垂直于晶片表面的孔的壁，间隔件涂层至少密封地覆盖平行于晶片表面延伸的孔的壁。

86. 发明授权

US06303980B1 Fusible link in an integrated semiconductor circuit and a memory cell of a semiconductor component 有权
标题翻译：集成半导体电路中的可熔连接和半导体部件的存储单元
公开(公告)号：US06303980B1
公开(公告)日：2001-10-16
申请号：US09549276
申请日：2000-04-14
申请人： Wolfgang Werner , Karlheinz Müller , Holger Pöhle
发明人： Wolfgang Werner , Karlheinz Müller , Holger Pöhle
IPC分类号： H01L2702
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A fusible link in an integrated semiconductor circuit and a process for producing the fusible link contemplate the disposition of a fusible link, which is constructed with a cross-sectional constriction as a desired fusing point for its conductor track, in a void. A surface of the void and/or a bare conductor track can be covered with a protection layer, to prevent corrosion. The advantages of such a fusible link are a lower ignition energy and increased reliability. The fusible link may be used as a memory element of a PROM.
摘要翻译：集成半导体电路中的可熔链路和用于制造可熔连接的工艺的过程考虑到在空隙中构造有作为其导体轨迹的期望的熔合点的横截面收缩的可熔连接件的布置。空隙和/或裸导体轨道的表面可以用保护层覆盖，以防止腐蚀。这种可熔连接件的优点是较低的点火能量和更高的可靠性。可熔链路可以用作PROM的存储元件。

87. 发明授权

US6147381A Field effect-controllable semiconductor component 有权
标题翻译：场效应可控半导体元件
公开(公告)号：US6147381A
公开(公告)日：2000-11-14
申请号：US187501
申请日：1998-11-06
申请人： Franz Hirler , Frank Pfirsch , Wolfgang Werner
发明人： Franz Hirler , Frank Pfirsch , Wolfgang Werner
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/739 , H01L29/72
CPC分类号： H01L29/0623 , H01L29/0619 , H01L29/7395 , H01L29/0847
摘要： A field effect-controllable semiconductor component, such as a new IGBT using planar technology, includes a shielding zone disposed about a base zone, resulting in elevation of a minority charge carrier density at a cathode side of the IGBT, leading to a reduction of forward voltage. The effect of a drift field produced due to a concentration gradient between the shielding zone and the base zone is that the inner zone no longer acts as a sink for the minority charge carriers. In order to ensure that the breakdown voltage of the IGBT is not reduced by the incorporation of the shielding zone, a non-connected, floating region of high conductivity is disposed in the region of the inner zone. A lower edge of the non-connected, floating region is deeper in the inner zone than a lower edge of the shielding zone. The non-connected, floating region has a conduction type opposite that of the shielding zone and the inner zone.
摘要翻译：诸如使用平面技术的新型IGBT的场效应可控半导体部件包括围绕基极区设置的屏蔽区域，导致IGBT的阴极侧的少量电荷载流子密度升高，导致向前的减少电压。由于屏蔽区域和基极区域之间的浓度梯度而产生的漂移场的影响是内部区域不再充当少量电荷载流子的吸收器。为了确保IGBT的击穿电压不被并入屏蔽区域而降低，在内部区域中设置高导电性的非连接浮动区域。非连接的浮动区域的下边缘在内区域比屏蔽区域的下边缘更深。非连接的浮动区域具有与屏蔽区域和内部区域相反的导电类型。

88. 发明授权

US5817539A Production method for a micromechanical component with a movable structure 失效
标题翻译：具有可移动结构的微机械部件的制造方法
公开(公告)号：US5817539A
公开(公告)日：1998-10-06
申请号：US780489
申请日：1997-01-08
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： H01L21/302 , B81B3/00 , B81C1/00 , G01P15/08 , H01L21/306 , H01L49/00 , H01L21/00 , G01P15/00
CPC分类号： B81C1/00944 , G01P15/0802
摘要： In order to avoid sticking effects before a movable micromechanical structure is laid bare, in a production method for a micromechanical component with a movable structure, the structure is joined to a suitable mount, such as the substrate, through an auxiliary structure, and this auxiliary structure is not removed until after the movable structure is laid bare. This method is compatible with IC production processes for integrated circuits.
摘要翻译：为了避免在可移动微机械结构裸露之前的粘附效应，在具有可移动结构的微机械部件的制造方法中，结构通过辅助结构连接到诸如基板的合适的安装件，并且该辅助直到可移动结构裸露后才能移除结构。该方法与集成电路的IC生产流程兼容。

89. 发明授权

US5733936A 6-dimethylaminomethyl-1-phenyl-cyclohexane compounds as pharmaceutical active ingredients 失效
标题翻译： 6-二甲基氨基甲基-1-苯基 - 环己烷化合物作为药物活性成分
公开(公告)号：US5733936A
公开(公告)日：1998-03-31
申请号：US679756
申请日：1996-07-10
申请人： Helmut Heinrich Buschmann , Wolfgang Werner Alfred Strassburger , Norma Selve , Elmar Josef Friderichs
发明人： Helmut Heinrich Buschmann , Wolfgang Werner Alfred Strassburger , Norma Selve , Elmar Josef Friderichs
IPC分类号： C07D319/08 , A61K31/135 , A61K31/165 , A61K31/195 , A61K31/21 , A61K31/38 , A61K31/381 , A61K31/41 , A61K31/44 , A61K31/4402 , A61K31/4418 , A61P25/04 , C07C215/46 , C07C215/64 , C07C217/54 , C07C217/56 , C07C217/58 , C07C217/66 , C07C217/74 , C07C219/28 , C07C219/30 , C07C229/06 , C07C229/08 , C07C229/40 , C07C271/58 , C07D213/64 , C07D213/643 , C07D277/20 , C07D277/34 , C07D277/36 , C07D295/155 , C07D333/32 , C07F9/09 , A61K31/16 , A61K31/425 , C07C211/35 , C07D211/72
CPC分类号： C07D295/155 , C07C215/46 , C07C215/64 , C07C217/54 , C07C217/74 , C07C219/28 , C07C229/08 , C07C271/58 , C07D213/643 , C07C2101/14
摘要： 6-dimethylaminomethyl-1-phenyl-cyclohexane compounds, methods of preparing them and the use of these compounds in drugs are described.
摘要翻译：对6-二甲基氨基甲基-1-苯基 - 环己烷化合物的制备方法和这些化合物在药物中的应用进行了描述。

90. 发明授权

US5326208A Nut for turning onto a threaded stud 失效
标题翻译：用于转动到螺柱上的螺母
公开(公告)号：US5326208A
公开(公告)日：1994-07-05
申请号：US10236
申请日：1993-01-28
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： F16B29/00 , F16B37/00 , F16B37/16
CPC分类号： F16B37/002 , F16B37/005 , Y10S411/908
摘要： A nut for turning onto a threaded stud and having a smooth bore extending from an inwardly-tapering conical lead-in area, the nut being characterized in that in the lead-in area a stripping zone is formed by a plurality of parallel tubular cavities of smaller diameter than the bore of the nut, in that the cavities are spaced apart and arranged symmetrically about the axis of the bore of the nut, in that the axis of each tubular cavity is spaced from the axis of the bore of the nut by a distance smaller than the sum of the radii of the tubular cavity and of the bore and greater than the radius of the bore, in that the intersections of the walls of each tubular cavity with the wall of the bore of the nut form cutting edges, and in that the respectively adjacent tubular cavities are linked to one another via cavities provided therebetween so that a coating stripped from the threaded stud as the nut is turned onto the stud can be accommodated in this cavity.Preferably, the nut has three tubular cavities which are linked together by three linking cavities.
摘要翻译：用于转动到螺柱上并且具有从内锥形的锥形引入区域延伸的光滑孔的螺母，其特征在于，在引入区域中，汽提区由多个平行的管状空腔形成，直径小于螺母的孔径，因为空腔相对于螺母的孔的轴线对称地分开设置，因为每个管状空腔的轴线与螺母孔的轴线间隔开一个距离小于管状空腔和孔的半径的总和大于孔的半径，因为每个管状空腔的壁与螺母孔的壁的交叉形成切割边缘，并且因为分别相邻的管状空腔通过设置在它们之间的空腔彼此连接，使得当螺母转到螺柱上时从螺柱脱离的涂层可容纳在该空腔中。优选地，螺母具有通过三个连接腔连接在一起的三个管状空腔。

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