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81. 发明申请

US20090061595A1 METHOD FOR DIVIDING A SEMICONDUCTOR SUBSTRATE AND A METHOD FOR PRODUCING A SEMICONDUCTOR CIRCUIT ARRANGEMENT 有权
标题翻译：用于分割半导体基板的方法和用于生产半导体电路布置的方法
公开(公告)号：US20090061595A1
公开(公告)日：2009-03-05
申请号：US12188232
申请日：2008-08-08
申请人： Hans WEBER , Markus ZUNDEL
发明人： Hans WEBER , Markus ZUNDEL
IPC分类号： H01L21/00
CPC分类号： H01L21/78
摘要： A method for dividing a semiconductor substrate involves providing a semiconductor substrate. At least one separating trench is produced at a front side of the semiconductor substrate. A layer is produced at least at the bottom of the at least one separating trench. The semiconductor substrate is thinned at a rear side of the semiconductor substrate at least as far as the layer at the bottom of the at least one separating trench. The layer is severed in order to divide the semiconductor substrate into individual pieces.
摘要翻译：用于分割半导体衬底的方法包括提供半导体衬底。在半导体衬底的前侧产生至少一个分离沟槽。至少在至少一个分离槽的底部产生一层。半导体衬底在半导体衬底的后侧至少与至少一个分离沟槽的底部的层一样薄化。为了将半导体衬底分成单独的部分，该层被切断。

82. 发明授权

US07193293B2 Semiconductor component with a compensation layer, a depletion zone, and a complementary depletion zone, circuit configuration with the semiconductor component, and method of doping the compensation layer of the semiconductor component 有权
标题翻译：具有补偿层，耗尽区和互补耗尽区的半导体元件，具有半导体元件的电路配置，以及掺杂半导体元件的补偿层的方法
公开(公告)号：US07193293B2
公开(公告)日：2007-03-20
申请号：US10141834
申请日：2002-05-09
申请人： Hans Weber , Dirk Ahlers , Gerald Deboy
发明人： Hans Weber , Dirk Ahlers , Gerald Deboy
IPC分类号： H01L29/00
CPC分类号： H01L29/7816 , H01L21/26506 , H01L29/0634 , H01L29/167 , H01L29/66712 , H01L29/7802 , H01L2924/0002 , H03K17/08142 , H01L2924/00
摘要： A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the semiconductor component. When a reverse voltage is applied, the degree of compensation changes as a function of time and the breakdown voltage of the semiconductor component increases in a manner governed by the degree of compensation. The invention furthermore relates to a circuit configuration and to a method for doping a compensation layer according to the invention.
摘要翻译：根据电荷载流子补偿的原理起作用的半导体元件具有不完全电离的掺杂物，其被附加地设置在半导体元件的半导体本体中。当施加反向电压时，补偿程度随着时间的推移而变化，半导体组件的击穿电压以补偿程度为基础的增加。本发明还涉及根据本发明的电路配置和掺杂补偿层的方法。

83. 发明授权

US06812524B2 Field effect controlled semiconductor component 有权
标题翻译：场效应控制半导体元件
公开(公告)号：US06812524B2
公开(公告)日：2004-11-02
申请号：US10013999
申请日：2001-12-11
申请人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
发明人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/1095 , H01L29/41766 , H01L29/7816
摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.
摘要翻译：半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。补偿区相对于漂移区具有互补导电类型并且包括至少两个段。选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围当前。

84. 发明授权

US06667514B2 Semiconductor component with a charge compensation structure and associated fabrication 有权
标题翻译：具有电荷补偿结构和相关制造的半导体元件
公开(公告)号：US06667514B2
公开(公告)日：2003-12-23
申请号：US10190119
申请日：2002-07-03
申请人： Dirk Ahlers , Gerald Deboy , Hans Weber , Armin Willmeroth
发明人： Dirk Ahlers , Gerald Deboy , Hans Weber , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/41766
摘要： A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.
摘要翻译：半导体部件包括电荷补偿结构，其中具有最大局部场强的位置位于电荷补偿结构的补偿边缘区域中。因此，可以显着地改善诸如半导体部件的导通电阻的电参数，而不影响或削弱诸如击穿电压和相对于TRAPATT振荡的鲁棒性的其它参数。还提供了制造具有电荷补偿结构的半导体部件的方法。

85. 发明授权

US06639272B2 Charge compensation semiconductor configuration 有权
公开(公告)号：US06639272B2
公开(公告)日：2003-10-28
申请号：US10113343
申请日：2002-04-01
申请人： Dirk Ahlers , Armin Willmeroth , Hans Weber
发明人： Dirk Ahlers , Armin Willmeroth , Hans Weber
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/66712
摘要： Charge balancing is achieved in a compensation component by creating compensation regions having different thickness. In this manner, the ripple of the electric field can be chosen to have approximately the same magnitude in all of the compensation regions.

86. 发明授权

US4888840A Method for mercerizing textile fabric webs and apparatus for carrying out the method 失效
标题翻译：用于丝光纤维织物网的方法和用于实施该方法的装置
公开(公告)号：US4888840A
公开(公告)日：1989-12-26
申请号：US323200
申请日：1989-03-13
申请人： Hans Weber
发明人： Hans Weber
IPC分类号： D06B7/08
CPC分类号： D06B7/08
摘要： After leaving the hot lye bath (2) the fabric web (1) is immediately cooled down in a cooling zone (C) and only then passed to a residence zone (5) in which the lye acts on the fabric. Stretcing of the fabric web is then effected in a widthwise stretching zone (E), wherein it is again heated, preferably by a feed of hot weak lye. That combination of method steps provides optimum mercerizing effects with careful removal of shrinkage of the fabric.
摘要翻译：离开热碱液浴（2）后，织物网（1）立即在冷却区（C）中冷却，然后仅通过其中碱液作用在织物上的停留区（5）。然后在横向拉伸区域（E）中进行织物网的拉伸，其中其再次被加热，优选地通过热的弱碱液进料。该方法步骤的组合通过仔细地去除织物的收缩而提供最佳的丝光效果。

87. 发明授权

US4448442A Longitudinally adjustable ski pole 失效
标题翻译：纵向可调雪杖
公开(公告)号：US4448442A
公开(公告)日：1984-05-15
申请号：US336610
申请日：1982-01-04
申请人： Hans Weber-Henning , Peter Weber
发明人： Hans Weber-Henning , Peter Weber
IPC分类号： A63C11/22
CPC分类号： A63C11/222 , A63C11/221
摘要： An improved ski pole having an adjustable length is provided with two telescopically movable tube sections. The tube sections are inserted into each other and are movable relative to each other and are provided with a latch and a plurality of catches. When shortening the length of the ski pole, a spring is tensioned. The increasing of the length of the ski pole is caused by the tensioned spring. The switch is arranged at the reverse side of the grip of the ski pole. The latch is arranged fixedly at the inner tube section and the catches are arranged at a pivotable cylinder which can be elevated and lowered as well as rotated. The catches are defined by horizontally extending sections of at least one Z-shaped groove. The pivoting cylinder is connected at a off-center pivot point to the switching or operating, respectively, member. The entire mechanism for the longitudinal adjustment of the ski pole is arranged in the gripping section of the ski pole. This gripping section is easily mounted onto normal ski poles. The ski pole is specifically intended for cross-country skiers, who can adjust the ski pole to have three varying lengths depending upon the prevailing country shape whereby a chosen length is arrested by an interlocking of the tube sections which can be moved in each other. The pivoting cylinder may additionally comprise an axially extending additional coulisse. If the pivoting cylinder is rotated by the operating member such that the additional groove is aligned with the latch, the ski pole is in a condition in which it elastically yields in its longitudinal direction.
摘要翻译：具有可调节长度的改进的滑雪杆具有两个可伸缩运动的管段。管段彼此插入并且可相对于彼此移动并且设置有闩锁和多个卡子。当缩短滑雪杆的长度时，弹簧被张紧。滑雪杆的长度的增加是由张紧的弹簧造成的。开关布置在滑雪杆的手柄的相反侧。闩锁被固定地布置在内管部分处，并且卡扣布置在可以升高和降低以及旋转的可枢转圆柱体处。卡扣由至少一个Z形槽的水平延伸部分限定。枢转气缸在偏心枢轴点处连接到分别切换或操作的构件。用于滑雪杆纵向调整的整个机构设置在滑雪杆的抓握部分中。这个抓握部分很容易安装在正常的滑雪杖上。滑雪杆专门针对越野滑雪者，他们可以根据主要的国家形状调整滑雪杖，具有三种不同的长度，由此通过可相互移动的管段互锁来阻止所选择的长度。枢转圆柱体可以另外包括轴向延伸的另外的凸缘。如果枢转圆筒由操作构件旋转，使得附加凹槽与闩锁对准，则滑雪杖处于其纵向方向上弹性产生的状态。

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