专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US6008163A Process for slip casting textured tubular structures 失效
公开(公告)号：US6008163A
公开(公告)日：1999-12-28
申请号：US338323
申请日：1994-11-14
申请人： Greg A. Steinlage , Kevin P. Trumble , Keith J. Bowman
发明人： Greg A. Steinlage , Kevin P. Trumble , Keith J. Bowman
IPC分类号： B28B1/28 , B28B7/38 , B28B21/08 , H01L39/24 , H01L39/00
CPC分类号： B28B1/28 , B28B21/08 , B28B7/38 , H01L39/2419 , Y10S505/739 , Y10S505/741 , Y10T428/1314 , Y10T428/1317
摘要： A process for centrifugal slip casting a textured hollow tube. A slip made up of a carrier fluid and a suspended powder is introduced into a porous mold which is rotated at a speed sufficient to create a centrifugal force that forces the slip radially outward toward the inner surface of the mold. The suspended powder, which is formed of particles having large dimensional aspect ratios such as particles of superconductive BSCCO, settles in a textured fashion radially outward toward the mold surface. The carrier fluid of the slip passes by capillary action radially outward around the settled particles and into the absorbent mold. A layer of mold release material is preferably centrifugally slip cast to cover the mold inner surface prior to the introduction of the BSCCO slip, and the mold release layer facilitates removal of the BSCCO greenbody from the mold without fracturing.

72. 发明授权

US05998337A Superconductor 失效
公开(公告)号：US05998337A
公开(公告)日：1999-12-07
申请号：US188232
申请日：1998-11-09
申请人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
发明人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
IPC分类号： H01L39/24 , H01L39/00
CPC分类号： H01L39/2435 , H01L39/2458 , H01L39/2461 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/265 , Y10T428/31678
摘要： Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.

73. 发明授权

US5987342A Laminated superconducting ceramic tape 失效
标题翻译：层压超导陶瓷胶带
公开(公告)号：US5987342A
公开(公告)日：1999-11-16
申请号：US705811
申请日：1996-08-30
申请人： John D. Scudiere , David M. Buczek , Gregory L. Snitchler , Paul J. Di Pietro
发明人： John D. Scudiere , David M. Buczek , Gregory L. Snitchler , Paul J. Di Pietro
IPC分类号： B32B37/14 , H01L39/14 , H01L39/24 , H01B12/02 , H01L39/00
CPC分类号： B32B37/144 , H01L39/143 , H01L39/248 , B32B2309/62 , Y10S428/93 , Y10S505/701 , Y10S505/704 , Y10S505/705 , Y10T428/24942 , Y10T428/31678
摘要： A superconducting ceramic includes a laminate and a superconducting ceramic tape joined to the laminate. The laminate and superconductor tape are joined such that the tape is under a compressive stress. The compressive stress is of a greater amount than the compressive stress which results from differences in thermal expansion of the tape and the laminate. The greater compressive stress can be achieved by putting the laminate under a greater tension than the superconducting ceramic tape during joining of the superconducting ceramic tape to the laminate.
摘要翻译：超导陶瓷包括层合体和连接到层压体的超导陶瓷带。层合体和超导体带被接合，使得带处于压应力下。压缩应力比由带和层压板的热膨胀差异引起的压应力大。通过在将超导陶瓷带粘合到层压体上时，通过将层压体设置在比超导陶瓷带更大的张力下，可以实现更大的压缩应力。

74. 发明授权

US5949131A Junction between wires employing oxide superconductors and joining method therefor 失效
标题翻译：使用氧化物超导体的导线之间的连接点及其接合方法
公开(公告)号：US5949131A
公开(公告)日：1999-09-07
申请号：US446349
申请日：1995-05-22
申请人： Kenichi Sato , Takeshi Kato , Nobuhiro Shibuta , Hidehito Mukai
发明人： Kenichi Sato , Takeshi Kato , Nobuhiro Shibuta , Hidehito Mukai
IPC分类号： C04B37/00 , H01L39/02 , H01R4/68 , H01L39/00
CPC分类号： C04B37/001 , C04B35/645 , H01L39/02 , H01R4/68 , C04B2235/6567 , C04B2237/34 , C04B2237/408 , C04B2237/66 , C04B2237/704 , C04B2237/76 , C04B2237/80 , C04B2237/82 , Y10S505/704
摘要： According to one aspect, provided is a junction between tape-type superconductors, which are formed of metal-coated oxide superconductors. The superconductors of the superconducting wires, which are oppositely joined to each other, are overlapped with each other. According to another aspect, provided is a method of joining tape-type superconducting wires formed of metal-coated oxide superconductors, which comprises a step of preparing tape-type superconducting wires having portions to be joined, a step of separating metal coatings from first sides of the superconductors in the portions to be joined for exposing the superconductors, a step of overlapping the exposed superconductors with each other, and a step of joining the overlapped superconductors to each other. In the junction obtained according to these aspects, it is possible to stably carry a uniform superconducting current.
摘要翻译：根据一个方面，提供了由金属覆盖的氧化物超导体形成的带状超导体之间的连接点。超导线彼此相对接合的超导体彼此重叠。根据另一方面，提供一种连接由金属涂覆的氧化物超导体形成的带状超导线的方法，其包括制备具有待接合部分的带状超导线的步骤，将金属涂层从第一侧分离的步骤在要连接的用于暴露超导体的部分中的超导体，将暴露的超导体彼此重叠的步骤以及将重叠的超导体彼此连接的步骤。在根据这些方面获得的结中，可以稳定地承载均匀的超导电流。

75. 发明授权

US5912503A Planar in-line resistors for superconductor circuits 失效
标题翻译：用于超导体电路的平面直线电阻器
公开(公告)号：US5912503A
公开(公告)日：1999-06-15
申请号：US785031
申请日：1997-01-02
申请人： Hugo W. Chan , Arnold H. Silver
发明人： Hugo W. Chan , Arnold H. Silver
IPC分类号： H01L39/22 , H01L39/24 , H01L39/00 , H01B12/00 , B32B12/00
CPC分类号： H01L39/2464 , Y10S438/923
摘要： A method of fabricating a low-inductance, in-line resistor includes the steps of: depositing a superconductive layer 12 on a base layer 14; patterning an interconnect region 16 on the superconductive layer 12; and converting the interconnect region 16 of the superconductive layer 12 to a resistor material region 18. The resistor region 18 and the superconductive layer 12 are substantially in the same plane. The method can further include the steps of depositing a conductive layer 22 on the resistor region 18 and on the photo-resist layer 20, and lifting off the photo-resist layer 20 to leave the conductive layer 22 on the resistor region 18. As such, the conductive layer 22 provides a low sheet resistivity for the resistor region 18. In another embodiment, the method includes the steps of: depositing in-situ a superconductive layer 12 on a base layer 14; depositing in-situ a conductive layer 22 on the superconductive layer 12 to form a bi-layer 24; patterning an interconnect region 16 on the bi-layer 24; and converting the interconnect region 16 of the bi-layer 24 to a resistor material region 18.
摘要翻译：制造低电感直列电阻器的方法包括以下步骤：在基极层14上沉积超导层12; 图案化超导层12上的互连区域16; 并且将超导层12的互连区域16转换成电阻材料区域18.电阻器区域18和超导层12基本上在同一平面内。该方法还可以包括以下步骤：在电阻器区域18和光致抗蚀剂层20上沉积导电层22，并且提起光致抗蚀剂层20以将导电层22留在电阻器区域18上。同样地导电层22为电阻器区域18提供低的薄层电阻率。在另一个实施例中，该方法包括以下步骤：在基底层14上原位沉积超导层12; 在导电层12上原位沉积导电层22以形成双层24; 图案化双层24上的互连区域16; 并将双层24的互连区域16转换成电阻材料区域18。

76. 发明授权

US5898020A Structures having enhanced biaxial texture and method of fabricating same 失效
标题翻译：具有增强的双轴织构的结构及其制造方法
公开(公告)号：US5898020A
公开(公告)日：1999-04-27
申请号：US650249
申请日：1996-05-22
申请人： Amit Goyal , John D. Budai , Donald M. Kroeger , David P. Norton , Eliot D. Specht , David K. Christen
发明人： Amit Goyal , John D. Budai , Donald M. Kroeger , David P. Norton , Eliot D. Specht , David K. Christen
IPC分类号： C01G1/00 , C01G3/00 , C21D1/26 , C21D8/12 , C22F1/00 , C22F1/10 , C22F1/14 , C23C14/02 , C23C14/58 , C30B23/02 , C30B25/02 , C30B29/22 , H01L39/00 , H01L39/24 , B32B15/04
CPC分类号： H01L39/248 , C21D8/12 , C23C14/028 , C30B23/02 , C30B25/02 , C30B29/22 , C30B29/225 , H01L39/2448 , H01L39/2454 , H01L39/2461 , C21D2201/04 , C21D2201/05 , Y10S428/93 , Y10S505/701 , Y10T29/49014 , Y10T428/12493 , Y10T428/12611 , Y10T428/12618 , Y10T428/31678
摘要： A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.
摘要翻译：双轴纹理制品包括具有面心立方体心立方或六方密堆积结晶结构的金属的经轧制和退火的双轴织构化衬底; 以及外延沉积在其上的外延超导体或其它器件。

77. 发明授权

US5880521A Super-conductive wiring and semiconductor device using the same 失效
标题翻译：超导布线及使用其的半导体器件
公开(公告)号：US5880521A
公开(公告)日：1999-03-09
申请号：US581499
申请日：1995-12-29
申请人： Hiroshi Watanabe
发明人： Hiroshi Watanabe
IPC分类号： C01G1/00 , C01G3/00 , C30B29/22 , H01B12/02 , H01B13/00 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/528 , H01L23/532 , H01L27/108 , H01L27/115 , H01L39/06 , H01L39/00
CPC分类号： H01L23/5283 , H01L21/76891 , H01L23/53285 , H01L27/10808 , H01L27/115 , H01L2924/0002
摘要： An integrated circuit device comprises a plurality of integrated circuit layers formed on a semiconductor substrate, a wiring layer having a ladder-like lattice and formed of a material exhibiting superconductivity in a longitudinal direction, the wiring layer connecting arbitrary integrated circuit layers of the plurality of integrated circuit layers, and an isolation layer having a ladder-like lattice and formed of the same material as the wiring layer such that a resistance in a widthwise direction is higher than that in a longitudinal direction, the isolation layer isolating an arbitrary integrated circuit layer of the plurality of integrated circuit layers.
摘要翻译：一种集成电路装置，包括形成在半导体基板上的多个集成电路层，具有梯状格子的布线层，并且由纵向呈现超导性的材料形成，所述布线层将多个集成电路层，以及具有梯状格子的隔离层，由与布线层相同的材料形成，使得宽度方向的电阻高于长度方向的电阻，隔离层将任意的集成电路层的多个集成电路层。

78. 发明授权

US5877511A Single-electron controlling magnetoresistance element 失效
标题翻译：单电子控制磁阻元件
公开(公告)号：US5877511A
公开(公告)日：1999-03-02
申请号：US940194
申请日：1997-09-29
申请人： Tetsufumi Tanamoto , Shuichi Iwabuchi
发明人： Tetsufumi Tanamoto , Shuichi Iwabuchi
IPC分类号： G01R33/09 , H01L29/66 , H01L43/08 , H01L29/06 , H01L39/00
CPC分类号： B82Y10/00 , H01L43/08
摘要： A single-electron controlling magnetoresistance element which comprises, a couple of first ferromagnetic bodies each magnetized in a first direction, a second ferromagnetic body magnetized in a second direction in an initial direction and sandwiched between the couple of first ferromagnetic bodies with a tunnel junction interposed therebetween respectively, and means for directing the magnetization direction of the second ferromagnetic body to a direction different from the second direction, wherein a charging energy E.sub.c of a single electron in at least one of the tunnel junctions interposed between the first ferromagnetic body and the second ferromagnetic body meets the following conditions:E.sub.c >>k.sub.B T (2)E.sub.c >>h/R.sub.t C (3)wherein k.sub.B T is a thermal energy at an operation temperature, h is a Planck's constant, R.sub.t is a junction tunnel resistance, and C is a junction capacity.
摘要翻译：一种单电子控制磁阻元件，其包括：一对第一铁磁体，每个第一铁磁体沿第一方向磁化;第二铁磁体，沿初始方向沿第二方向被磁化，并夹在所述一对第一铁磁体之间，以及用于将第二铁磁体的磁化方向引导到与第二方向不同的方向的装置，其中插入在第一铁磁体和第二铁磁体之间的至少一个隧道结中的单个电子的充电能量Ec 铁磁体满足以下条件：Ec >> kBT（2）Ec >> h / RtC（3）其中kBT是工作温度下的热能，h是普朗克常数，Rt是结隧道电阻，C是一个连接能力。

79. 发明授权

US5801124A Laminated superconducting ceramic composite conductors 失效
标题翻译：层压超导陶瓷复合导体
公开(公告)号：US5801124A
公开(公告)日：1998-09-01
申请号：US701333
申请日：1996-08-30
申请人： Bruce B. Gamble , Gilbert N. Riley, Jr. , John D. Scudiere , Michael D. Manlief , David M. Buczek , Gregory L. Snitchler
发明人： Bruce B. Gamble , Gilbert N. Riley, Jr. , John D. Scudiere , Michael D. Manlief , David M. Buczek , Gregory L. Snitchler
IPC分类号： H01L39/14 , H01L39/24 , H01L39/00 , H01B12/00
CPC分类号： H01L39/248 , H01L39/143 , Y10S428/93 , Y10S505/704
摘要： The invention provides a superconducting ceramic laminate including a superconducting tape mechanically coupled to, and compressively strained to 0.1% or more under a predetermined load by, at least one cladding tape. The material and thickness of the cladding tape or tapes are selected relative to the material and thickness of the superconducting tape to locate the neutral axis so that, under a predetermined heavy load, the maximum compressive strain on any superconducting portion of the superconducting tape is less than the critical compressive strain and the maximum tensile strain on any superconducting portion of the superconducting tape under a predetermined load is less than the critical tensile strain. By "heavy load" is meant a load on the laminate equivalent to a load on the unlaminated superconducting tape selected for the laminate including a surface bend strain on the unlaminated superconducting tape of at least 0.1%. The laminate provides high critical current capacity, improved strain tolerance, superior critical current retention, and high packing factors. Articles comprising the laminates, such as coils and cables, are also provided.
摘要翻译：本发明提供了一种超导陶瓷层压体，其包括机械地耦合到至少一个包覆带上并在预定负载下被压缩至0.1％或更多的超导带。相对于超导带的材料和厚度来选择包覆带或带的材料和厚度以定位中性轴线，使得在预定的重负载下，超导带的任何超导部分上的最大压缩应变较小超过在预定载荷下超导带的任何超导部分上的临界压应变和最大拉伸应变小于临界拉伸应变。 “重负荷”是指层压板上的载荷相当于在层压板上选择的非层压超导带上的载荷，其中包括非层压超导带上的表面弯曲应变为至少0.1％。层压板提供高临界电流容量，改进的应变耐受性，优异的临界电流保持率和高填充因子。还提供了包括层压材料，例如线圈和电缆的制品。

80. 发明授权

US5796120A Tunnel thin film electroluminescent device 失效
标题翻译：隧道薄膜电致发光器件
公开(公告)号：US5796120A
公开(公告)日：1998-08-18
申请号：US577976
申请日：1995-12-28
申请人： Christopher J. Summers , Brent K. Wagner
发明人： Christopher J. Summers , Brent K. Wagner
IPC分类号： H05B3/22 , H05B33/12 , H05B33/14 , H01L29/06 , H01L39/00
CPC分类号： H05B33/145 , H05B3/22 , H05B33/12
摘要： A low voltage tunnel thin film electroluminescent device (10) that comprises a conductive layer (13) that acts as a source of electrons, a first thin barrier layer (14) deposited on the conductive layer, a luminescent layer (16) deposited on the barrier layer a second thin barrier layer (14) deposited on said luminescent layer, and an electrode (18) deposited on the second barrier layer. Electrons from the source layer tunnel through the thin tunnel barrier layer into the luminescent layer which is doped with luminescent centers. The electrons that tunnel through the thin tunnel barrier layer into the luminescent layer have kinetic energy that is within a narrow energy distribution. The material comprising the first barrier layer is preferably chosen to have a positive conduction band off-set (22) with respect to the conductive layer and the material comprising the luminescent layer is chosen to have a negative conduction band off-set (24) with respect to said first barrier layer, wherein the negative conduction band off-set is greater than the positive conduction band off-set. Further, the different material layers are preferably lattice-matched and epitaxially grown in order to make the device more efficient.
摘要翻译：一种低电压隧道薄膜电致发光器件（10），其包括用作电子源的导电层（13），沉积在所述导电层上的第一薄势垒层（14），沉积在所述导电层上的发光层（16）沉积在所述发光层上的第二薄势垒层（14）和沉积在所述第二阻挡层上的电极（18）。来自源层的电子穿过薄隧道势垒层进入掺杂有发光中心的发光层。穿过薄隧道势垒层进入发光层的电子具有处于窄能量分布内的动能。包括第一阻挡层的材料优选被选择为相对于导电层具有正导带偏移（22），并且包括发光层的材料被选择为具有负导带偏移（24），具有带相对于所述第一阻挡层，其中所述负导带偏移大于所述正导带偏移。此外，为了使器件更有效，不同的材料层优选是晶格匹配和外延生长的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式