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71. 发明授权

US5976245A Czochralski crystal growing system 失效
标题翻译：切克拉斯基晶体生长系统
公开(公告)号：US5976245A
公开(公告)日：1999-11-02
申请号：US96370
申请日：1998-06-12
申请人： Richard M. Aydelott
发明人： Richard M. Aydelott
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , Y10T117/1056
摘要： A Czochralski crystal growing system includes components for adding dopants to semiconductor materials and for growing single crystals. The components comprise a portion formed of a material that is chemically compatible with the semiconductor material. The portion includes a cavity sized to contain a desired amount of dopant. The cavity protects the dopant from exposure to contaminants, gas flows and heat in crystal growing furnaces. The portion is dipped into a melt to release the dopant. The portion can be a seed crystal which can further be used to grow a single crystal from the melt after doping. The components can include separate first and second portions formed of materials that are chemically compatible with the melt so that the portions can be placed into the melt. At least one of the first and second portions can contain a dopant. The second portion can be a seed crystal for growing a single crystal. The first portion can act as a heat sink to reduce temperature gradients between the melt and the seed crystal, so as to reduce the generation of dislocations in the seed crystal. The Czochralski crystal growing system also provides components for growing single crystals which may optionally not contain a dopant for adding to a melt. These components can comprise a seed crystal and a heat sink that controls heat transfer from the melt to the seed crystal to pre-heat the seed crystal in a controlled manner.
摘要翻译： Czochralski晶体生长系统包括用于向半导体材料添加掺杂剂和用于生长单晶的组分。这些部件包括由与半导体材料化学相容的材料形成的部分。该部分包括尺寸适于容纳期望量的掺杂剂的空腔。空腔保护掺杂剂不会暴露于晶体生长炉中的污染物，气体流和热。将该部分浸入熔体中以释放掺杂剂。该部分可以是可以进一步用于在掺杂后从熔体中生长单晶的晶种。这些部件可以包括由与熔体化学相容的材料形成的分离的第一和第二部分，使得这些部分可以放置在熔体中。第一和第二部分中的至少一个可以包含掺杂剂。第二部分可以是用于生长单晶的晶种。第一部分可以用作散热器以降低熔体和晶种之间的温度梯度，从而减少晶种中位错的产生。切克拉斯基晶体生长系统还提供用于生长单晶的组分，其可以任选地不含有用于添加到熔体中的掺杂剂。这些组分可以包括晶种和散热器，其控制从熔体到籽晶的热传递，以便以受控的方式预加热晶种。

72. 发明授权

US5925147A Process for producing single crystals 失效
标题翻译：单晶生产工艺
公开(公告)号：US5925147A
公开(公告)日：1999-07-20
申请号：US769528
申请日：1996-12-19
申请人： Makoto Ito
发明人： Makoto Ito
IPC分类号： C30B15/00 , C30B15/14 , C30B27/02 , C30B29/06 , H01L21/208 , C30B15/10
CPC分类号： C30B15/14 , C30B15/00 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072
摘要： A process for producing single crystals has been presented which enables the pulling up and growing of single crystals, without loss of accurate control of the oxygen concentration in the crystal, and with excellent dielectric strength of subsequently produced gate oxide films. The process of producing single crystals in accordance with this invention is characterized by confluence of the inert gas flows (33 and 32) once divided into outside and inside a heat resistant and heat insulative component (7).
摘要翻译：已经提出了生产单晶的方法，其能够提取和生长单晶，而不会精确控制晶体中的氧浓度，并且具有优异的后续制备的栅极氧化物膜的介电强度。根据本发明的单晶的制造方法的特征在于，一旦分成外部和内部的耐热和隔热部件（7）的惰性气体流（33和32）的汇合。

73. 发明授权

US5876496A Method for feeding a granular raw material and feeding apparatus 失效
标题翻译：颗粒状原料供给装置的供给方法
公开(公告)号：US5876496A
公开(公告)日：1999-03-02
申请号：US827105
申请日：1997-03-17
申请人： Naoki Nagai , Chihiro Tashiro , Atsushi Ozaki , Michiaki Oda
发明人： Naoki Nagai , Chihiro Tashiro , Atsushi Ozaki , Michiaki Oda
IPC分类号： C30B15/02 , C30B29/06
CPC分类号： C30B15/02 , Y10T117/1056 , Y10T117/1064
摘要： A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.
摘要翻译：用于将颗粒状原料间歇地或连续地供给到牵引装置1的供给储存器11，通过闸阀12连接到供给储存器11的室13，粒状原料供给部15，向颗粒状原料供给部设置通过闸阀14的室13和调节室13的内部压力的压力调节装置20，并且将颗粒状原料供给到供给储存器11，同时保持供给储存器11的内部压力相同作为单晶拉制装置1的内压。该供给方法和结构使得即使在连续充电过程和充电过程中也可以不间断地进行加工而再次加入附加量的颗粒状原料单晶棒直径大，不增加供料槽的容量。

74. 发明授权

US5324488A Continuous liquid silicon recharging process in czochralski crucible pulling 失效
标题翻译：连续液态硅补充工艺在切克劳斯基坩埚拉拔
公开(公告)号：US5324488A
公开(公告)日：1994-06-28
申请号：US73351
申请日：1993-06-07
申请人： Herbert Klingshirn , Reinhard Lang
发明人： Herbert Klingshirn , Reinhard Lang
IPC分类号： C30B15/02 , C30B15/04 , C30B15/12 , C30B29/06 , H01L21/208 , B01D9/00
CPC分类号： C30B15/02 , C30B15/04 , Y10T117/1052 , Y10T117/1056
摘要： In the Czochralski crucible pulling of crystal ingots, in particular those of silicon and having particularly large crystal diameters, the degree of filling of the crucible is kept approximately constant during the pulling process by continuously adding solid or liquid recharging material. According to the invention, the known disadvantages of thermal disturbances and the introduction of impurities and particles are overcome by a recharging system with a gas-tight seal, comprising additional crucible, stock container for semiconductor material and dopant having the appropriate feedlines and an exhaust gas line. In addition, the process makes possible a regulatable and separate recharging of dopant via the additional crucible.
摘要翻译：在Czochralski坩埚中拉晶晶锭，尤其是具有特别大的晶体直径的晶锭，通过连续添加固体或液体补充材料，坩埚的填充程度在拉拔过程中保持大致恒定。根据本发明，通过具有气密密封的再充电系统克服了热扰动和引入杂质和颗粒的已知缺点，其包括另外的坩埚，用于半导体材料的储料容器和具有适当馈线的掺杂剂和排气线。此外，该方法可以通过另外的坩埚对掺杂剂进行可调节和分离的再充电。

75. 发明授权

US5021224A Apparatus for growing multicomponents compound semiconductor crystals 失效
标题翻译：用于生长多组分化合物半导体晶体的装置
公开(公告)号：US5021224A
公开(公告)日：1991-06-04
申请号：US864982
申请日：1986-05-20
申请人： Kazuo Nakajima
发明人： Kazuo Nakajima
IPC分类号： C30B17/00 , C30B15/02 , C30B15/18 , C30B19/10 , C30B29/60
CPC分类号： C30B19/10 , C30B15/02 , C30B15/18 , Y10T117/1052 , Y10T117/1056
摘要： A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element is immersed and dissolved in the growth solution by conducting DC electric current from a current supplying electrode immersed in the growth solution through the growth solution to the source material, and thus a desired composition of the growth solution can be constantly maintained. As a result, the composition of the grown crystals of the multicomponents compound semiconductor can be also controlled to a desired proportion.

76. 发明授权

US5009863A Apparatus for manufacturing silicon single crystals 失效
标题翻译：硅单晶制造装置
公开(公告)号：US5009863A
公开(公告)日：1991-04-23
申请号：US540647
申请日：1990-06-19
申请人： Yoshinobu Shima , Hiroshi Kamio
发明人： Yoshinobu Shima , Hiroshi Kamio
IPC分类号： C30B15/22 , C30B15/02 , C30B15/10 , C30B15/12 , C30B15/14 , C30B29/06 , H01L21/208
CPC分类号： C30B15/12 , C30B15/14 , Y10S117/90 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： A silicon single crystal manufacturing apparatus in which a partition member formed with at least one small hole through its lower part is arranged in a rotating quartz crucible so as to surround a large cylindrical silicon single crystal which is rotated and pulled. The whole or part of the partition member is made from cellular silica glass whose cell content (volume percentage) is between 0.01 and 15% or less than 0.01% but increased to 0.01 through 15% by the heat used for melting starting silicon material. Thus, the molten material contacting with the inside of the partition member is prevented from decreasing in temperature and solidification of the molten material from this portion is prevented.

77. 发明授权

US4834832A Process and apparatus for the manufacture of silicon rods 失效
标题翻译：用于制造硅棒的工艺和设备
公开(公告)号：US4834832A
公开(公告)日：1989-05-30
申请号：US896501
申请日：1986-08-15
申请人： Horst Stock , Lothar Huber , Georg Priewasser
发明人： Horst Stock , Lothar Huber , Georg Priewasser
IPC分类号： C30B29/06 , C30B11/00 , C30B15/00 , C30B15/02 , C30B15/08 , H01L21/18 , H01L21/208
CPC分类号： C30B29/605 , C30B11/002 , C30B15/08 , Y10S117/90 , Y10S117/91 , Y10T117/1008 , Y10T117/1036 , Y10T117/1044 , Y10T117/1056 , Y10T117/1068
摘要： A process and apparatus for the manufacture of silicon rods having a colur structure comprising monocrystalline crystal zones with a crystallographic preferred orientation. Molten silicon is transferred from a silicon reservoir into a crystallization chamber which is formed by rollers arranged in a leak-proof manner in the shape of the desired rod cross-section. There the silicon first forms a stable outer shell of solidified material and, while it continues to crystallize, it is withdrawn at the bottom and released by the rollers. Owing to the short period of contact with a vessel wall a silicon rod is obtained that is particularly free of impurites.
摘要翻译：一种用于制造具有柱状结构的硅棒的方法和装置，其包括具有晶体优选取向的单晶晶体区。熔融硅从硅储存器转移到结晶室中，该结晶室由以防漏方式布置成所需棒状横截面形状的辊形成。在那里，硅首先形成稳定的固化外壳，并且当其继续结晶时，其在底部被抽出并由辊释放。由于与容器壁接触的时间短，所以获得了特别没有杂质的硅棒。

78. 发明授权

US4661324A Apparatus for replenishing a melt 失效
标题翻译：用于补充熔体的装置
公开(公告)号：US4661324A
公开(公告)日：1987-04-28
申请号：US702342
申请日：1985-02-15
申请人： Nicholas C. Sink , Myer Rogers
发明人： Nicholas C. Sink , Myer Rogers
IPC分类号： H01L21/18 , C30B15/02 , C30B15/34 , C30B35/00
CPC分类号： C30B15/34 , C30B15/02 , Y10T117/104 , Y10T117/1056
摘要： Apparatus for replenishing a melt while a crystal growing operation is in process. The apparatus comprises an elongated hollow housing member having an open top end and a closed bottom end. A vertically movable support means for supporting a charge of source material, to be added to the melt, is located within the hollow housing member. The apparatus further comprises a conduit means for delivering a predetermined charge of source material to the support means. A charge of source material is delivered to the melt by operation of a retractor means that retracts the support means downwardly within the hollow housing member against the force of a spring means that yieldingly biases the support means upwardly within the hollow housing member towards the open top end of the hollow housing member. When the support means reaches a predetermined release point in its downward motion, the retractor means automatically releases the support means to the force of the spring means. Under the force of the spring means, the support means moves rapidly upward within the hollow housing member until it hits a stop means at which moment the charge of source material is projected into a deflector member which deflects the charge into the melt.
摘要翻译：在晶体生长操作过程中补充熔体的装置。该装置包括具有敞开的顶端和封闭的底端的细长的中空的壳体构件。用于支撑要添加到熔体中的源材料的电荷的可垂直移动的支撑装置位于中空壳体构件内。该装置还包括用于将预定量的源材料输送到支撑装置的导管装置。源材料的装料通过牵引器装置的操作被传送到熔体，该牵开器装置克服弹簧装置的力将支撑装置向下缩回，该弹簧装置将支撑装置向上朝向开口顶部向上偏压中空壳体构件的端部。当支撑装置在其向下运动中到达预定的释放点时，牵开器装置自动地将支撑装置释放到弹簧装置的力。在弹簧装置的作用下，支撑装置在空心壳体构件内快速向上移动，直到其撞到止动装置，此时源材料的电荷投射到将电荷偏转到熔体中的导流构件中。

79. 发明授权

US4620897A Method for growing multicomponent compound semiconductor crystals 失效
标题翻译：生长多组分化合物半导体晶体的方法
公开(公告)号：US4620897A
公开(公告)日：1986-11-04
申请号：US652239
申请日：1984-09-19
申请人： Kazuo Nakajima
发明人： Kazuo Nakajima
IPC分类号： C30B17/00 , C30B15/02 , C30B15/18 , C30B19/10 , C30B29/60
CPC分类号： C30B19/10 , C30B15/02 , C30B15/18 , Y10T117/1052 , Y10T117/1056
摘要： A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element is immersed and dissolved in the growth solution by conducting DC electric current from a current supplying electrode immersed in the growth solution through the growth solution to the source material, and thus a desired composition of the growth solution can be constantly maintained. As a result, the composition of the grown crystals of the multicomponents compound semiconductor can be also controlled to a desired proportion.
摘要翻译：从其生长溶液中生长三种以上的多组分化合物半导体的晶体的方法和装置，其中含有至少一种溶质元素的源材料通过浸入浸入生长溶液中的电流供给电极引入DC电流而浸入并溶解在生长溶液中通过生长溶液的生长溶液到源材料，从而可以不断地保持生长溶液的期望组成。结果，多组分化合物半导体的生长晶体的组成也可以控制到所需的比例。

80. 发明授权

US4410494A Apparatus for controlling flow of molten material between crystal growth furnaces and a replenishment crucible 失效
标题翻译：用于控制晶体生长炉和补充坩埚之间熔融材料流动的装置
公开(公告)号：US4410494A
公开(公告)日：1983-10-18
申请号：US253655
申请日：1981-04-13
申请人： George Fiegl
发明人： George Fiegl
IPC分类号： C30B15/00 , C30B15/02 , C30B15/20
CPC分类号： C30B15/02 , C30B15/005 , Y10T117/1008 , Y10T117/1056
摘要： Several embodiments of a replenishment arrangement for furnishing molten semiconductor material to furnaces for growing monocrystalline boules are described. A replenishment crucible within which a melt of the material from which the boules are to be grown is communicated either intermittently or continuously with a plurality of growth furnaces. The melt level in all of the growth crucibles is controlled by determining the level of molten material in the replenishment crucible.
摘要翻译：描述了用于将熔融半导体材料提供给用于生长单晶晶粒的熔炉的补充装置的几个实施例。一种补充坩埚，其中要生长毛坯的材料的熔体与多个生长炉间歇地或连续地连通。通过确定补充坩埚中熔融材料的含量来控制所有生长坩埚中的熔体水平。

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