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71. 发明授权

US09466741B2 Digital alloy absorber for photodetectors 有权
标题翻译：用于光电探测器的数字合金吸收体
公开(公告)号：US09466741B2
公开(公告)日：2016-10-11
申请号：US12639913
申请日：2009-12-16
申请人： Cory J. Hill , David Z. Ting , Sarath D. Gunapala
发明人： Cory J. Hill , David Z. Ting , Sarath D. Gunapala
IPC分类号： H01L31/0304 , H01L31/101
CPC分类号： H01L31/03046 , H01L31/101 , Y02E10/544
摘要： In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.
摘要翻译：为了增加光谱响应范围并提高光生载流子（例如在nBn光电检测器中）的迁移率，可以通过将一个（或其部分）嵌入到半导体材料的几个单层（插入物）中来使用数字合金吸收器层）周期性地进入吸收层的不同的主体半导体材料。插入层和主体半导体材料的半导体材料可以具有基本上不匹配的晶格常数。例如，这可以通过将InSb的单层周期性地嵌入到InAsSb主体中作为吸收区域来实现，以扩展InAsSb光电检测器的截止波长，例如基于InAsSb的nBn器件。所述技术允许同时控制合金组成和净应变，这两者都是光电检测器操作的关键参数。

72. 发明授权

US09466637B2 Low noise hybridized detector using charge transfer 有权
标题翻译：低噪声杂交检测器采用电荷转移
公开(公告)号：US09466637B2
公开(公告)日：2016-10-11
申请号：US14792065
申请日：2015-07-06
申请人： Sensors Unlimited, Inc.
发明人： Peter Dixon , Navneet Masaun
IPC分类号： H01L29/732 , H01L27/146 , H01L31/109 , H01L31/18 , H01L29/45 , H01L29/49 , H01L29/205 , H01L31/0304 , H01L31/103 , H01L31/112
CPC分类号： H01L31/1844 , H01L27/14616 , H01L27/14649 , H01L27/14679 , H01L27/14689 , H01L27/14694 , H01L29/205 , H01L29/452 , H01L29/495 , H01L31/022408 , H01L31/03046 , H01L31/1013 , H01L31/1035 , H01L31/109 , H01L31/112 , H01L31/1127 , Y02E10/544
摘要： A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.
摘要翻译：低噪声红外光电探测器具有包括光电二极管和晶体管的外延异质结构。光电二极管包括第一导电类型的高灵敏度窄带隙光电检测器层和与光电检测器层接触的第二导电类型的收集阱。晶体管包括收集阱，与收集阱和光电检测器层隔开的第二导电类型的转移阱以及在收集阱和转移阱之间的第一导电类型的区域。收集井和转移井具有不同的深度，并且由单个扩散形成。

73. 发明申请

US20160293787A1 Nanostructured window layer in solar cells 审中-公开
标题翻译：太阳能电池中的纳米结构窗层
公开(公告)号：US20160293787A1
公开(公告)日：2016-10-06
申请号：US14442133
申请日：2013-11-12
申请人： THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
发明人： Dong Liang , Yangsen Kang , Yijie Huo , James S. Harris, JR.
IPC分类号： H01L31/0468 , H01L31/0224 , H01L31/0216
CPC分类号： H01L31/0468 , H01L31/02168 , H01L31/022433 , H01L31/02363 , H01L31/073 , H01L31/0735 , Y02E10/543 , Y02E10/544
摘要： A solar cell has a nanostructured window layer with planar p-n junction geometry. Preferably, metal grid mesas are used to provide lateral conductance and good electrical contacts. In addition to carrier confinement and lateral conductance, this window layer can also provides a broadband angle-independent antireflection function. This structure enhances both the optical and electrical properties in a solar cell, leading to higher Jsc, Voc, FF (fill factor) and efficiency. The absorption in the window layer is partially converted to photocurrent, which to some extent compensates for the self-absorption loss due to its greater thickness. This design can eliminate the need for a separate anti-reflection coating.
摘要翻译：太阳能电池具有平面p-n结几何形状的纳米结构窗口层。优选地，金属网格台面用于提供横向电导和良好的电接触。除了载流子限制和横向电导之外，该窗口层还可以提供宽带角度独立的抗反射功能。该结构增强了太阳能电池中的光学和电学性能，导致更高的Jsc，Voc，FF（填充因子）和效率。窗口层中的吸收部分转化为光电流，这在一定程度上可以补偿由于其较大的厚度而引起的自吸收损失。这种设计可以消除对单独的防反射涂层的需要。

74. 发明申请

US20160284878A1 CONTROL CIRCUITS FOR DYNAMICALLY BIASED AVALANCHE PHOTODIODES 有权
标题翻译：用于动态偏光的AVALANCHE光刻胶的控制电路
公开(公告)号：US20160284878A1
公开(公告)日：2016-09-29
申请号：US15081729
申请日：2016-03-25
申请人： Dynamic Photonics, Inc.
发明人： Payman Zarkesh-Ha , Majeed M. Hayat , Robert Efroymson
IPC分类号： H01L31/02 , H01L31/107 , H01L31/0304
CPC分类号： H01L31/02027 , H01L31/0304 , H01L31/107 , Y02E10/544
摘要： Method and apparatus for maximizing the output of a dynamically biased avalanche photodiode (APD). The output of the APD is amplified. A feedback loop comprising a phase shifter measures the RF power of the amplified output and adjusts the phase of the AC signal which is used to dynamically bias the APD until the output power is maximized. The AC signal is also split into out of phase signals, thereby substantially canceling out the bias current injected into the APD output, leaving only the desired amplified optical output signal. The monitoring and tuning of the AC dynamic bias can eliminate phase drift over time, as well as other non-ideal effects that can occur, such as those due to temperature changes or device aging effects.
摘要翻译：用于最大化动态偏置雪崩光电二极管（APD）的输出的方法和装置。 APD的输出被放大。包括移相器的反馈回路测量放大输出的RF功率，并调整用于动态偏置APD的AC信号的相位，直到输出功率最大化。 AC信号也被分为异相信号，从而基本上消除了注入APD输出的偏置电流，仅留下所需的放大光输出信号。 AC动态偏置的监测和调谐可以消除随时间的相位漂移，以及可能发生的其他非理想效应，例如由于温度变化或器件老化影响引起的其他非理想效应。

75. 发明授权

US09450139B2 Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing method of photoelectric conversion device 有权
标题翻译：半导体膜的制造方法，半导体装置的制造方法以及光电转换装置的制造方法
公开(公告)号：US09450139B2
公开(公告)日：2016-09-20
申请号：US14978463
申请日：2015-12-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuhiro Tanaka , Erika Kato
IPC分类号： H01L31/20 , H01L21/02 , H01L29/04 , H01L29/66 , H01L31/0304 , H01L31/0368 , H01L31/0376 , H01L31/072 , H01L31/0735 , H01L31/113 , H01L31/18 , H01L31/105 , H01L29/786
CPC分类号： H01L31/20 , H01L21/02532 , H01L21/02576 , H01L21/02592 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78696 , H01L31/0304 , H01L31/03685 , H01L31/03687 , H01L31/0376 , H01L31/03762 , H01L31/03765 , H01L31/072 , H01L31/0735 , H01L31/105 , H01L31/1136 , H01L31/1808 , H01L31/1812 , H01L31/1816 , H01L31/1824 , H01L31/1852 , H01L31/202 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.
摘要翻译：提供了一种用于形成含有杂质元素并具有低电阻率的非晶半导体的方法，以及制造具有优异的电特性，高产率的半导体器件的方法。在利用等离子体CVD法形成含有杂质元素的非晶半导体的方法中，在可以获得根据帕邢定律的最小放电起始电压的压力和电极距离处的电极上施加脉冲调制放电初始电压由此形成含有杂质元素并具有低电阻率的非晶半导体。

76. 发明授权

US09450123B2 Thermo-tunneling design for quantum well photovoltaic converter 有权
标题翻译：量子阱光伏转换器的热隧道设计
公开(公告)号：US09450123B2
公开(公告)日：2016-09-20
申请号：US13740726
申请日：2013-01-14
申请人： The University of Houston System
发明人： Alexandre Freundlich , Andenet Alemu
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/0304 , H01L31/077 , B82Y20/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03048 , H01L31/077 , Y02E10/544 , Y10S977/755
摘要： A design of a quantum well region that allows faster and more efficient carrier collection in quantum well solar cells. It is shown that for a quantum well material system displaying a negligible valence band offset, the conduction band confinement energies and barrier thicknesses can be designed to favor a sequential thermionic promotion and resonant tunneling of electrons to the conduction band continuum resulting in faster carrier collection rates than for a conventional design. An evaluation of the proposed design in the context of devices incorporating GaAs/GaAsN quantum wells shows a collection of all photo-generated carriers within several to tenths of ps (10−12 s) from deep quantum wells rather than several ns, as it is the case for conventional designs. The incorporation of the proposed design in single and multijunction solar cells is evaluated with efficiency enhancements.
摘要翻译：量子阱区域的设计，允许在量子阱太阳能电池中更快更有效的载流子收集。显示对于显示可忽略的价带偏移的量子阱材料系统，可以设计导带限制能量和阻挡层厚度，以有利于电子顺序的热离子促进和共振隧穿隧道，从而导致更快的载流子收集速率而不是传统的设计。在采用GaAs / GaAsN量子阱的器件的背景下对所提出的设计的评估显示了从深量子阱而不是几个ns的几十到十分之一秒（10-12秒）内的所有光生载流子的集合，因为它是常规设计的情况。提出的设计在单结和多结太阳能电池中的并入通过效率增强进行评估。

77. 发明申请

US20160218233A1 INFRARED DETECTOR 有权
标题翻译：红外探测器
公开(公告)号：US20160218233A1
公开(公告)日：2016-07-28
申请号：US14649166
申请日：2013-06-06
申请人： NEC CORPORATION
发明人： Masayuki SHIRANE , Yuichi IGARASHI
IPC分类号： H01L31/0352 , H01L31/109 , H01L31/0304
CPC分类号： H01L31/118 , H01L31/03046 , H01L31/035218 , H01L31/101 , H01L31/119 , H01L31/184 , Y02E10/544
摘要： An infrared detector includes a semiconductor substrate, a first contact layer formed on the semiconductor substrate, a light-absorbing layer formed on the first contact layer, a second contact layer formed on the light-absorbing layer, and a voltage source that applies a voltage between the first contact layer and the second contact layer. The light-absorbing layer includes at least a part in which a first intermediate layer, a quantum dot layer, a second intermediate layer, a current block layer, a third intermediate layer, and an electron-doped layer are stacked in this order. The energy at a bottom of a conduction band in the current block layer is larger than the energy at a bottom of a conduction band in the intermediate layer and the thickness of the first intermediate layer is larger than the thickness of the third intermediate layer. It is therefore possible to provide an infrared detector having a high signal to noise ratio.
摘要翻译：一种红外检测器，包括半导体衬底，形成在半导体衬底上的第一接触层，形成在第一接触层上的光吸收层，形成在光吸收层上的第二接触层和施加电压的电压源在第一接触层和第二接触层之间。光吸收层至少包括依次堆叠第一中间层，量子点层，第二中间层，电流阻挡层，第三中间层和电子掺杂层的部分。当前阻挡层中导带底部的能量大于中间层中导带底部的能量，第一中间层的厚度大于第三中间层的厚度。因此，可以提供具有高信噪比的红外检测器。

78. 发明申请

US20160211400A1 MONOLITHIC MULTIPLE SOLAR CELLS 审中-公开
公开(公告)号：US20160211400A1
公开(公告)日：2016-07-21
申请号：US14988285
申请日：2016-01-05
申请人： AZUR SPACE Solar Power GMBH
发明人： Matthias MEUSEL , Gerhard STROBL , Frank DIMROTH , Andreas BETT
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/0232 , H01L31/074
CPC分类号： H01L31/0725 , H01L31/02168 , H01L31/02327 , H01L31/03046 , H01L31/047 , H01L31/052 , H01L31/0547 , H01L31/056 , H01L31/0687 , H01L31/0735 , H01L31/074 , Y02E10/52 , Y02E10/544
摘要： A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

79. 发明授权

US09389273B2 Solar cell characteristics determination 有权
公开(公告)号：US09389273B2
公开(公告)日：2016-07-12
申请号：US13675928
申请日：2012-11-13
申请人： International Business Machines Corporation
发明人： Tayfun Gokmen , Oki Gunawan
IPC分类号： G01B7/02 , G01R31/26 , H02S50/10 , H01L31/0687
CPC分类号： G01R31/2635 , H01L31/0687 , H02S50/10 , Y02E10/50 , Y02E10/544
摘要： An apparatus for determining solar cell characteristics includes a quantum efficiency measurement tool configured to measure an external quantum efficiency of the solar cell and a reflectivity measurement tool configured to measure the reflectivity of the solar cell. The apparatus also includes a capacitance measurement tool configured to measure the capacitance of the solar cell and a processor configured to calculate a diffusion length of the solar cell based on the measured quantum efficiency, reflectivity and capacitance of the solar cell.

80. 发明授权

US09379271B2 Variable range photodetector and method thereof 有权
标题翻译：可变范围光电检测器及其方法
公开(公告)号：US09379271B2
公开(公告)日：2016-06-28
申请号：US14285964
申请日：2014-05-23
申请人： U.S. Army Research Laboratory
发明人： Paul Shen , Lee Ellen Rodak , Chad Stephen Gallinat , Anand Venktesh Sampath , Michael Wraback
IPC分类号： H01L31/107 , H01L31/0224 , H01L31/0296 , H01L31/0304 , H01L31/0336 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1075 , H01L31/022408 , H01L31/0296 , H01L31/03044 , H01L31/03046 , H01L31/0336 , H01L31/03529 , H01L31/18 , Y02E10/544 , Y02P70/521
摘要： A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.
摘要翻译：一种制造方法和一种包括基底的光电探测器; p型或n型层; 每个具有偏振的第一和第二区域，其间的第一界面，所述第一和第二偏振的幅度和方向使得相对于投射到生长方向上的第一偏振的标量投影的生长方向上的第二偏振的标量投影足以创建第一接口电荷; 以及第三区域，适于形成其上具有第三偏振的第一极化的第一极化，第二和第三区之间的第二界面之间的n金属或p金属接触之一，所述第三极化在生长方向上具有标量投影，相对于标量将第二偏振投影到生长方向上足以产生第二界面电荷; 所述第一和第二界面电荷为限定预定波长范围的载流子产生静电势垒。

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