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1. 发明申请

US20160218233A1 INFRARED DETECTOR 有权
标题翻译：红外探测器
公开(公告)号：US20160218233A1
公开(公告)日：2016-07-28
申请号：US14649166
申请日：2013-06-06
申请人： NEC CORPORATION
发明人： Masayuki SHIRANE , Yuichi IGARASHI
IPC分类号： H01L31/0352 , H01L31/109 , H01L31/0304
CPC分类号： H01L31/118 , H01L31/03046 , H01L31/035218 , H01L31/101 , H01L31/119 , H01L31/184 , Y02E10/544
摘要： An infrared detector includes a semiconductor substrate, a first contact layer formed on the semiconductor substrate, a light-absorbing layer formed on the first contact layer, a second contact layer formed on the light-absorbing layer, and a voltage source that applies a voltage between the first contact layer and the second contact layer. The light-absorbing layer includes at least a part in which a first intermediate layer, a quantum dot layer, a second intermediate layer, a current block layer, a third intermediate layer, and an electron-doped layer are stacked in this order. The energy at a bottom of a conduction band in the current block layer is larger than the energy at a bottom of a conduction band in the intermediate layer and the thickness of the first intermediate layer is larger than the thickness of the third intermediate layer. It is therefore possible to provide an infrared detector having a high signal to noise ratio.
摘要翻译：一种红外检测器，包括半导体衬底，形成在半导体衬底上的第一接触层，形成在第一接触层上的光吸收层，形成在光吸收层上的第二接触层和施加电压的电压源在第一接触层和第二接触层之间。光吸收层至少包括依次堆叠第一中间层，量子点层，第二中间层，电流阻挡层，第三中间层和电子掺杂层的部分。当前阻挡层中导带底部的能量大于中间层中导带底部的能量，第一中间层的厚度大于第三中间层的厚度。因此，可以提供具有高信噪比的红外检测器。

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